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機器用センサ Grid-EYE Grid-EYE Grid-EYE Grid-EYE Grid-EYE 着座検知 扉開閉 洗濯機の水位検知 電子レンジ PS-A 微圧タイプ 水位検知 Grid-EYE 温度計測 位置検知 熱 軸GF 赤外線アレイセンサ Grid-EYE 設計 仕様について予告なく変更する場合があります ご購入及びご使用前に当社の技術仕様書などをお求め願い それらに基づいて購入及び使用していただきますようお願いします

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Bipolar Analog Integrated Circuits 3 VIC µpc2745tb, µpc2746tb IC3 V1.8 V NESAT TM ft = 20 GHz IC VCC = 2.73.3 V VCC = 1.83.3 V µpc2745tbfu = 2.7 GHz TYP. @3 db µpc2746tbfu = 1.5 GHz TYP. @3 db µpc2745tbisl

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uPC2711TB,uPC2712TB DS

5 VIC Bipolar Analog Integrated Circuits µpc2711tb, µpc2712tbbsic 20122915 µpc2711tb, µpc2712tb µpc2711t, µpc2712t NESAT TM ft = 20 GHz IC fu = 2.9 GHz TYP.µPC2711TB fu = 2.6 GHz TYP.µPC2712TB GP = 13

03J_sources.key

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127 3 II 3.1 3.1.1 Φ(t) ϕ em = dφ dt (3.1) B( r) Φ = { B( r) n( r)}ds (3.2) S S n( r) Φ 128 3 II S 1, S 2 Φ 1, Φ 2 Φ 1 = { B( r) n( r)}ds S 1 Φ 2 = { B( r) n( r)}ds (3.3) S 2 S S 1 +S 2 { B( r) n( r)}ds

AD8515: 1.8 V 低電力 CMOS レール to レール入力／出力オペアンプ

REV. REVISION 15-6891 1-16-1 3 542 82 532-3 3-5-36 MT 2 6 635 6868 AD8515 1.8V CMOS to 1.8 5V 6mV SOT23 2.7V/µs 5MH to 2pA 1.8V 45µA PCMCIA PDA AD8515 1.8Vto SOT23-5L AD8515 5MHz 1.8V1mV to 2.7V/µs ASIC

講義ノート 物性研究 電子版 Vol.3 No.1, (2013 年 T c µ T c Kammerlingh Onnes 77K ρ 5.8µΩcm 4.2K ρ 10 4 µωcm σ 77K ρ 4.2K σ σ = ne 2 τ/m τ 77K

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uPC2709T DS

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7 -a 7 -a February 4, 2007 1. 2. 3. 4. 1. 2. 3. 1 Gauss Gauss ɛ 0 E ds = Q (1) xy σ (x, y, z) (2) a ρ(x, y, z) = x 2 + y 2 (r, θ, φ) (1) xy A Gauss ɛ 0 E ds = ɛ 0 EA Q = ρa ɛ 0 EA = ρea E = (ρ/ɛ 0 )e z

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修士論文

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4‐E )　キュリー温度を利用した消磁：熱消磁

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36 th IChO : - 3 ( ) , G O O D L U C K final 1

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(1.2) T D = 0 T = D = 30 kn 1.2 (1.4) 2F W = 0 F = W/2 = 300 kn/2 = 150 kn 1.3 (1.9) R = W 1 + W 2 = = 1100 N. (1.9) W 2 b W 1 a = 0

1 1 1.1 1.) T D = T = D = kn 1. 1.4) F W = F = W/ = kn/ = 15 kn 1. 1.9) R = W 1 + W = 6 + 5 = 11 N. 1.9) W b W 1 a = a = W /W 1 )b = 5/6) = 5 cm 1.4 AB AC P 1, P x, y x, y y x 1.4.) P sin 6 + P 1 sin 45

uPC2745TB,uPC2746TB DS

Bipolar Analog Integrated Circuits 3 V IC µpc275tb, µpc27tb IC3 V V NESAT ft = 2 GHz IC VCC = 2.73.3 V VCC = 3.3 V µpc275tbfu = 2.7 GHz TYP. @3 db µpc27tbfu = 1.5 GHz TYP. @3 db µpc275tbisl = 38 db TYP.

飽和分光

3 Rb 1 1 4 1.1 4 1. 4 5.1 LS 5. Hyperfine Structure 6 3 8 3.1 8 3. 8 4 11 4.1 11 5 14 5.1 External Cavity Laser Diode: ECLD 14 5. 16 5.3 Polarization Beam Splitter: PBS 17 5.4 Photo Diode: PD 17 5.5 :

,.,, 1. LED, 1450nm 1450nm 2mm 2mm LED 1mm 1mm

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(1) (kn/m 3 )

1 1 1.1 1.1.1 (1) 1.1 1.2 1.1 (kn/m 3 ) 77 71 24.5 23 21 8.0 22.5 2 1 1.2 N/m 2 2 m 3 m 2000 2200 2500 3000 (2) 1 A B B 1.3 1.5 1.1 T cm 1.1 3 1.3 L m L 4 L > 4 1.0 L 32 + 7 8 1.2 T 4 1 2 5.0 kn/m 2 3.

τ τ

1 1 1.1 1.1.1 τ τ 2 1 1.1.2 1.1 1.1 µ ν M φ ν end ξ µ ν end ψ ψ = µ + ν end φ ν = 1 2 (µφ + ν end) ξ = ν (µ + ν end ) + 1 1.1 3 6.18 a b 1.2 a b 1.1.3 1.1.3.1 f R{A f } A f 1 B R{AB f 1 } COOH A OH B 1.3

A = A x x + A y y + A, B = B x x + B y y + B, C = C x x + C y y + C..6 x y A B C = A x x + A y y + A B x B y B C x C y C { B = A x x + A y y + A y B B

9 7 A = A x x + A y y + A, B = B x x + B y y + B, C = C x x + C y y + C..6 x y A B C = A x x + A y y + A B x B y B C x C y C { B = A x x + A y y + A y B B x x B } B C y C y + x B y C x C C x C y B = A

読めば必ずわかる 分散分析の基礎 第２版

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The Physics of Atmospheres CAPTER :

The Physics of Atmospheres CAPTER 4 1 4 2 41 : 2 42 14 43 17 44 25 45 27 46 3 47 31 48 32 49 34 41 35 411 36 maintex 23/11/28 The Physics of Atmospheres CAPTER 4 2 4 41 : 2 1 σ 2 (21) (22) k I = I exp(

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NJW4124 IC ( ) NJW4124 AC-DC 1cell/2cell IC / 1 NJW4124M / Bi-CMOS NJW4124M : DMP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 TX-SW 3 18 CS2 GND 4 17 VS PC 5 16 V

IC ( ) AC-DC 1cell/2cell IC / 1 M / Bi-CMOS M : DMP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 TX-SW 3 18 CS2 GND 4 17 VS PC 5 16 VREF ADP 6 15 V + 7 14 TDET 8 13 TH C1 9 12 TL C2 10 11 CHG-SW M - 1 - (Ta=25 C) V

006 11 8 0 3 1 5 1.1..................... 5 1......................... 6 1.3.................... 6 1.4.................. 8 1.5................... 8 1.6................... 10 1.6.1......................

AN8934FA

BS +QPSK IC BS QPSK IC 4.5MHz L.P.F. 5.7MHz B.P.F. C/N 2 (75Ω ) 1 (75Ω ) PCM IC MN88831 1 (18.432MHz) BS 37 48 (14.25) 1 12.00±0.20 10.00±0.20 36 25 0.65 12 0.30 +0.10 0.05 Seating plane 24 13 (1.425)

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1 17 () BAC9ABC6ACB3 1 tan 6 = 3, cos 6 = AB=1 BC=2, AC= 3 2 A BC D 2 BDBD=BA 1 2 ABD BADBDA ABC6 BAD = (18 6 ) / 2 = 6 θ = 18 BAD = 12 () AD AD=BADCAD9 ABD ACD A 1 1 1 1 dsinαsinα = d 3 sin β 3 sin β

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71 7 3,000 1 MeV t = 1 MeV = c 1 MeV c 200 MeV fm 1 MeV 3.0 10 8 10 15 fm/s 0.67 10 21 s (1) 1fm t = 1fm c 1fm 3.0 10 8 10 15 fm/s 0.33 10 23 s (2) 10 22 s 7.1 ( ) a + b + B(+X +...) (3) a b B( X,...)

1. 4cm 16 cm 4cm 20cm 18 cm L λ(x)=ax [kg/m] A x 4cm A 4cm 12 cm h h Y 0 a G 0.38h a b x r(x) x y = 1 h 0.38h G b h X x r(x) 1 S(x) = πr(x) 2 a,b, h,π

. 4cm 6 cm 4cm cm 8 cm λ()=a [kg/m] A 4cm A 4cm cm h h Y a G.38h a b () y = h.38h G b h X () S() = π() a,b, h,π V = ρ M = ρv G = M h S() 3 d a,b, h 4 G = 5 h a b a b = 6 ω() s v m θ() m v () θ() ω() dθ()

uPC29M33A, 29M05A DS

Bipolar Analog Integrated Circuits μ PC9M33A, 9M5A μ PC9M33A9M5APNPIO =.5 A.5 V TYP. IC μ PCMxxA3.3V.5 A VDIF =.5 V TYP.I O =.5 A Marking Side μ PC9M33AHF, μ PC9M5AHFTO- MP-5G μ PC9M33AHB, μ PC9M5AHBSC-6MP-3

TCM : mm RTR-505-TC / RTR-505-TCL / TR-55i- TC 7,500+ S 0.2 K, J, T, S K, J, T K, J, T

2018/07 T&D TCM-3010p.2 PTM-3010p.2 VIM-3010p.2 AIM-3010p.3 PIC-3150p.3 PMP-3200p.3 / TR-1C30 p.5 TR-2C30 p.5 TR-3C30 p.5 TR-5C10 p.6 AC AD-06A1 p.9 AD-05A2 p.9 AD-05A3 p.9 AD-0620 p.9 BC-0302 p.9 US-15C

0.1 I I : 0.2 I

1, 14 12 4 1 : 1 436 (445-6585), E-mail : sxiida@sci.toyama-u.ac.jp 0.1 I I 1. 2. 3. + 10 11 4. 12 1: 0.2 I + 0.3 2 1 109 1 14 3,4 0.6 ( 10 10, 2 11 10, 12/6( ) 3 12 4, 4 14 4 ) 0.6.1 I 1. 2. 3. 0.4 (1)

The DatasheetArchive - Datasheet Search Engine

Bipolar Analog Integrated Circuit 3 IC 3 5 V, 8 V, 12 V, 15 V, 18 V, 24 V 6 1 A Marking Side TO-22 MP-45G 4 MIN. µpc1435 5 V µpc1435 3 SIP TO-22 MP-45G 1 2 3 1 INPUT 2 GND 3 OUTPUT µ PC1435HF TO-22 MP-45G

ELCODIS.COM - ELECTRONIC COMPONENTS DISTRIBUTOR

Bipolar Analog Integrated Circuit 3 IC 3 5 V, 8 V, 12 V, 15 V, 18 V, 24 V 6 1 A Marking Side TO-22 MP-45G 4 MIN. µpc1435 5 V µpc1435 3 SIP TO-22 MP-45G 1 2 3 1 INPUT 2 GND 3 OUTPUT µ PC1435HF TO-22 MP-45G

(Compton Scattering) Beaming 1 exp [i (k x ωt)] k λ k = 2π/λ ω = 2πν k = ω/c k x ωt ( ω ) k α c, k k x ωt η αβ k α x β diag( + ++) x β = (ct, x) O O x

Compton Scattering Beaming exp [i k x ωt] k λ k π/λ ω πν k ω/c k x ωt ω k α c, k k x ωt η αβ k α x β diag + ++ x β ct, x O O x O O v k α k α β, γ k γ k βk, k γ k + βk k γ k k, k γ k + βk 3 k k 4 k 3 k

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1 -- 7 1 2008 9 MOS FT 1-1 1-2 1-3 1-4 c 2011 1/(17) 1 -- 7 -- 1 1--1 2008 9 1 1 1 1(a) VVS: Voltage ontrolled Voltage Source v in µ µ µ 1 µ 1 vin 1 + - v in 2 2 1 1 (a) VVS( ) (b) S( ) i in i in 2 2 1

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フォト IC ダイオード S SB S CT 視感度に近い分光感度特性 視感度特性に近い分光感度特性をもったフォトICダイオードです チップ上には2つの受光部があり 1つは信号検出用受光部 もう1つは近赤外域にのみ感度をもつ補正用受光部になっています 電流アンプ回路中で2

S9066-211SB S9067-201CT 視感度に近い分光感度特性 視感度特性に近い分光感度特性をもったフォトICダイオードです チップ上には2つの受光部があり 1つは信号検出用受光部 もう1つは近赤外域にのみ感度をもつ補正用受光部になっています 電流アンプ回路中で2つの受光部の出力を減算し ほぼ可視光域にのみ感度をもたせています また従来品に比べ 同一照度における異なる色温度の光源に対しての出力変化を低減しています

NJW4108 IC ( ) NJW4108 1cell/2cell IC NJW4108V / Bi-CMOS NJW4108V : SSOP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 CNT 3 18 CS2 GND 4 17 VS NC 5 16 VREF F-CHG 6

IC ( ) 1cell/2cell IC V / Bi-CMOS V : SSOP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 CNT 3 18 CS2 GND 4 17 VS NC 5 16 VREF F-CHG 6 15 V + 7 14 TDET 8 13 TH C1 9 12 TL C2 10 11 V - 1 - (Ta=25 C) V + +15 V C1 V C1

4 Mindlin -Reissner 4 δ T T T εσdω= δ ubdω+ δ utd Γ Ω Ω Γ T εσ (1.1) ε σ u b t 3 σ ε. u T T T = = = { σx σ y σ z τxy τ yz τzx} { εx εy εz γ xy γ yz γ

Mindlin -Rissnr δ εσd δ ubd+ δ utd Γ Γ εσ (.) ε σ u b t σ ε. u { σ σ σ z τ τ z τz} { ε ε εz γ γ z γ z} { u u uz} { b b bz} b t { t t tz}. ε u u u u z u u u z u u z ε + + + (.) z z z (.) u u NU (.) N U

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4 4 ) a + b = i + 6 b c = 6i j ) a = 0 b = c = 0 ) â = i + j 0 ˆb = 4) a b = b c = j + ) cos α = cos β = 6) a ˆb = b ĉ = 0 7) a b = 6i j b c = i + 6j + 8) a b a b = 6i j 4 b c b c 9) a b = 4 a b) c = 7

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2009 7 29-30 1 2 + + = 1 = 1 ( = = 0) 3 Eb (, T ) exp[ C C 2 1 5 /( T )] 1 [ W/(m2μm)] : [ m] T : [K] C 1 = 3.743 10 8 [W m 4 /m 2 ] C 2 = 1.439 10 4 [ m K] 4 E b max max T 2897 m m K = 10 m 5 E E b E

m dv = mg + kv2 dt m dv dt = mg k v v m dv dt = mg + kv2 α = mg k v = α 1 e rt 1 + e rt m dv dt = mg + kv2 dv mg + kv 2 = dt m dv α 2 + v 2 = k m dt d

m v = mg + kv m v = mg k v v m v = mg + kv α = mg k v = α e rt + e rt m v = mg + kv v mg + kv = m v α + v = k m v (v α (v + α = k m ˆ ( v α ˆ αk v = m v + α ln v α v + α = αk m t + C v α v + α = e αk m

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