スライド 1

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なぎさいんそん
7 years ago
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1 High-k & Selete 1

2 2

3 * * NEC * # * # # 3

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5 Si/Diamond, Si/SiC, Si/AlOx, Si Si,,, CN SoC, Materials Selection CZ Defectengineered SOI: Bonded, SIMOX, SOI Emerging Materials Various device process alternatives SOI 450mm Wafer Research Development Qualification Improvement 5

6 JEITA 215cm 45.5cm 798.4kg 1000kg 16.6kg 17.8kg 107.2kg 60kg

7 7 Near-term Long-term Year of Production Was Silicon loss (Å) per cleaning step Is Silicon loss (Å) per cleaning step Was Oxide loss (Å) per cleaning step Is Oxide loss (Å) per cleaning step Is Allowable watermarks

8 8 Gate CD Resist CD Litho/Etch

9 9 EOT MOSFET

10 10 Year of Production Cell size factor a ITRS /2004 ITRS Dielectric constant 2005 ITRS Capacitor dielectric material potential solutions 2003/2004 ITRS new material ALO/TAO ALO /TAO ALO /TAO /others 2005 ITRS Al 2 O 3, HfO 2, Ta 2 O 5 Ta 2 O 5, TiO 2 ultra-high high-k, new materials, strontium-based, perovskites

11 Poly 2 IPD Poly 1 Poly nm IPD Poly 2 IPD Poly nm EOT 4-6 nm EOT Poly 2 IPD Poly 1 Decoupling nm Poly 2 IPD Poly 1 ONO (Oxide-Nitride-Oxide) EOT high-k SiN STI logic 11

12 2 1 Feature size 30uC/cm D FeRAM Year of Production Feature size (µm) [A] Cell area factor: a [D] Capacitor active area (µm 2 ) [G] Cap active area/footprint ratio [H] Capacitor structure [J] stack stack stack stack stack 3D 3D Minimum switching charge density (µc/cm 2 ) at V op [M]

13 13

14 14 ITRS2003 ITRS2005 Enhanced mobility High-k (Low power) High-k (MPU) Metal gate FD-SOI

15 15 Bulk: 0.2eV FD-SOI: Ei 0.15eV(HP) Midgap (LOP) Ei 0.1eV LSTP) Multi-gate: Midgap (HP LOP) Ei 0.1eV LSTP) Year of Production DRAM ½ Pitch (nm) (contacted) Physical gate length low standby power (LSTP) Vdd:Power supply voltage (V) Equivalent physical oxide thickness for bulk low standby power T ox (nm) for 1.5E20-doped poly-si [A, A1, A2] Equivalent physical oxide thickness for bulk low standby power T ox (nm) for metal gate [A, A1, Gate dielectric leakage at 100 C for bulk (A/cm 2 ) LSTP [B, B1, B2] 1.5E E E E E E E E E-01 Metal gate work function for bulk LSTP E c,v f m (ev) [S] <0.2 <0.2 <0.2 <0.2 <0.2 <0.2

16 G. Lucovsky (2 nd International Workshop on Advanced Gate Stack Technology, 2005) 16

R. Jammy (IEDM Short Course 2005) µ eff (cm 2 /Vs) 1000 100 10 HfSiON [N]=20%, 0.

17 R. Jammy (IEDM Short Course 2005) µ eff (cm 2 /Vs) HfSiON [N]=20%, 0.1% O 2 PNA HfSiON [N]=22%, N 2 PNA SiO 2 1.9nm electron E eff (MV/cm) hole S. Inumiya (IEDM 2005) EOT=0.86nm 17

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20 φ m,eff (ev) E c NiSi 2 NiSi Ni 3 Si E v NiSi 2 Ni 3 Si NiSi PtSi Pt 3 Si PtSi Pt 3 Si Ni(Yb)Si Ni(Pt)Si ErSi 1.7 Yb x Si ErSi 1.7 TaSi x WSi HfSi Si content control Alloy Dual Germanide --- Hf-based high-k --- SiO 2 or SiON Ni(Ta)Si Ir x Si ErGe TaGe 2 TaGe 2 Pt 3 Ge 2 NiGe NiGe Pt 3 Ge 2 20

21 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1A 2A 3A 4A 5A 6A 7A 8 1B 2B 3B 4B 5B 6B 7B 0 1 H He 2 Li Be B C N O F Ne nmos pmos 3 Na Mg Al Si P S Cl Ar 4 K

21 A 2A 3A 4A 5A 6A 7A 8 1B 2B 3B 4B 5B 6B 7B 0 1 H He 2 Li Be B C N O F Ne nmos pmos 3 Na Mg Al Si P S Cl Ar 4 K Ca Sc Ti V Cr Mn Fe Co Ni Cu Zn Ga Ge As Se Br Kr 5 Rb Sr Y Zr Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb Te I Xe 6 Cs Ba Hf Ta W Re Os Ir Pt Au Hg Tl Pb Bi Po At Rn 7 Fr Ra

22 22 EOT (H.Y.Yu et. Al., EDL2004) (A.Callegari et. Al., IEDM2004)

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1 1 H Li Be Na M g B A l C S i N P O S F He N Cl A e K Ca S c T i V C Mn Fe Co Ni Cu Zn Ga Ge As Se B K Rb S Y Z Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb T e

No. 1 1 1 H Li Be Na M g B A l C S i N P O S F He N Cl A e K Ca S c T i V C Mn Fe Co Ni Cu Zn Ga Ge As Se B K Rb S Y Z Nb Mo Tc Ru Rh Pd Ag Cd In Sn Sb T e I X e Cs Ba F Ra Hf Ta W Re Os I Rf Db Sg Bh