devicemondai

Transcription

1 c 2019 i 3 (1) q V I T ε 0 k h c n p (2) T 300 K (3) A

2 ii c 2019 i A 131 B 132

3 c K V 1.1 qv = C 1.5 V = J (1.1) 1.2 l 5.0 µm n V (1) 1.0 V v (2) m/s 1.2 (1) E E = V l = 1.0 V 5.0 µm = V/m (1.2)

4 2 c v v = µ n E = 0.15 m 2 /(V s) V/m = m/s (1.3) (2) E E = v µ n = m/s 0.15 m 2 /(V s) = V/m (1.4) V V = El = V/m 5.0 µm = 5.0 V (1.5) 1.3 n i /m 3 µ n 0.40 m 2 /(V s) µ p 0.20 m 2 /(V s) σ 1.3 σ = q ( µ n + µ p ) ni = C ( 0.40 m 2 /(V s) m 2 /(V s) ) /m 3 = 0.24 S/m (1.6) E g [ev] n i [/m 3 ]

5 c (1) K (2) 1.4 (1) 1 (2) n µ n µ p n i (1) σ (2) σ min (3) n 1.5 (1) p np = n 2 i ) n 2 i σ = qµ n n + qµ p p = q (µ n n + µ p n (1.7) (2) µ n n + µ p n i 2 n 2 n 2 i µ n n µ p n = 2 µ n µ p n i (1.8) (9.31) 2 9.4

6 4 c (3) (1.8) σ min = 2q µ n µ p n i (1.9) µ n n = µ p n i 2 n (1.10) n = µp µ n n i (1.11) kg 9.2 µg S 1.0 cm 2 l 5.4 cm 1.5 V V 5.0 ma I /mol (1) (2) R (3) σ (4) [g/m 3 ] (5) 4.6 kg (6) 9.2 µg (7) (8) 1.6 (1) p (2) (3) R = 1 σ l S σ = R = V I = 1.5 V 5.0 ma = Ω (1.12) l RS = 5.4 cm = 1.8 S/m (1.13) Ω 1.0 cm2

7 c (4) 1 (5) /mol g (1.14) /m /mol g/m 3 (1.15) 4.6 kg g/m m 3 (1.16) (6) 1 (11/ ) g (7) 9.2 µg /mol (8) p σ = qµ p p (1.17) m /m 3 (1.18) µ p = σ qp = 1.8 S/m C /m m2 /(V s) (1.19) 1.1 (1) (2) (3) (4) (5) n (6) p (7) n (8) (Si) (P) (9) (10) (11) (12)

8 6 c (13) (14) (15) p 1.2 (1) 2 (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (10) (12) (10) (11) (13) (12) (14) (12) (15) (16) (15) [1] [15] [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [2] [8] [7] [13] [14] [15] n 3 p

9 c (Si) (GaAs) (a) (b) Si Si Si Si Si Si E g E g Si Si Si Si (a) (b) (c) (d) n p (a) (c) E g (a) (b) (c)

10 8 c 伝導帯 禁制帯 伝導帯 禁制帯 (a) (b) (c) S l V I (i) (x) S l I A V v E µ v = (i) (1.20) 1 A N S n v N = (ii) (1.21) I 1 A N q (1.21) (1.20) (1.23) I = (iii) (1.22) I = (iv) (1.23) I = (v) (1.24)

11 c E V l E = (vi) (1.25) (1.25) (1.24) I = (vii) (1.26) R R = (viii) (1.27) σ S l R = (ix) (1.28) (1.27) (1.26) (1.28) σ σ = (x) (1.29) 1.10 (1) (9) S l ρ R (1) V E (2) I J (3) V = RI E, J ρ (4) v n (5) I q (6) J (7) µ v (8) (4) (7) (8) ρ (9) 1.11 [m 2 /(V s)] [cm 2 /(V s)] A 300 K Si [cm 2 /(V s)] J

12 10 c T [K] kt [J] k (1) 300 K (2) 300 K 1.14 (1) 1 4 N v [/m 3 ] (2) n N v n/n v (3) σ (4) ρ 1.15 (1) σ i µ n µ p q n i (2) σ min µ n µ p q n i (3) σ i 3 (4) σ min l 2.5 mm 30 V V l 電子正孔 E (1) E (2) 1.5 (3) v n (4) v p

13 c µm p Si (1) 10 V (2) Si m/s 1.18 N P /m 3 (1) N P /N Si (2) n (3) p (4) σ (5) ρ /m 3 p n i /m 3 µ n 0.40 m 2 /(V s) µ p 0.20 m 2 /(V s) (1) σ (2) n 1.20 t 5.0 µm w 20 µm l 1.2 mm R 10 kω (1) (2) σ (3) N P (4) p 1.21 S 1.0 µm 2 l 3.2 µm p R 1.0 MΩ (1) A (2) ρ (3) σ

14 12 c (4) 1.22 N /m 3 n InP w 5.0 µm t 2.0 µm l 0.46 mm 23 V V 0.92 ma I (1) R (2) σ (3) µ (4) v 1.23 N D /m 3 n GaAs w 10 µm t 2.0 µm l 0.64 mm R 10 kω GaAs µ n 1.24 σ i S/m 3 n /m 3 p /m 3 σ 36 S/m (1) µ n (2) n i (3) µ p 3

15 c K I A pn (1) 300 K V (2) 1.0 ma 2.1 (1) (2) ( ) ] [ ( qv I = I 0 [exp 1 = ) ] C V A exp kt J/K 300 K A = 4.95 ma (2.1) V = kt [ ] I q ln + 1 = 1.38 [ J/K 300 K ] A I ln C A V (2.2) 2.2

16 14 c V I ( ) qv I I 0 exp kt (2.3) T 300 K (1) 10 % V 0 (2) V 0 V 1 I 1 2I 1 V 2 V 2 V (1) 1.1 I 0 [exp ( ) ] ( ) qv0 qv0 1 = I 0 exp kt kt (2.4) V 0 = kt q ln 11 = J/K 300 K C ln mv (2.5) (2) I 1 = I 0 exp ( ) ( ) qv1 qv2, 2I 1 = I 0 exp kt kt (2.6) ( ) q (V2 V 1 ) exp kt = 2I 1 I 1 = 2 (2.7) V 2 V 1 = kt q ln 2 = J/K 300 K C ln 2 18 mv (2.8) 2.3 I A 100 Ω R 2.1 I 20 ma V 0 2

17 c I V 0 R [ ] kt I q ln + 1 = 1.38 [ ] J/K 300 K 20 ma I ln C A V (2.9) V 0 = V Ω 20 ma = V V = 2.55 V (2.10) 2.4 pn C J V ϕ D C 0 ϕ D C J = C 0 ϕ D V (2.11) (1) V 0.00 V C J 50 pf V 1.44 V C J 30 pf ϕ D (2) V 0.63 V C J 2.4 (1) V 0 C J = C 0 C 0 50 pf (2.11) ( CJ ) 2 V ( ) 2 30 pf ( 1.44 V) ϕ D = C 0 ( CJ C 0 ) 2 1 = 50 pf ( ) 2 30 pf 1 50 pf = 0.81 V (2.12)

18 16 c (2) ϕ D C J = C 0 ϕ D V 0.81 V = 50 pf = 37.5 pf (2.13) 0.81 V V E 0 E 1 sin ωt I E 1 E 0 ) qe 1 kt I = I s exp ( qv kt E 1 sinw t I E 0 V (1) E 1 = 0 I 0 (2) E 1 0 I I 0 (3) I = I 0 + I 1 sin ωt I 1 x 1 exp x 1 + x 2.5 (1) V = E 0 I 0 = I s exp ( ) qe0 kt (2.14) (2) ( ) ( ) ( ) q (E0 + E 1 sin ωt) qe0 qe1 sin ωt I = I s exp = I s exp exp kt kt kt ( ) qe1 sin ωt = I 0 exp (2.15) kt

19 c (3) ( ) qe1 sin ωt exp kt 1 + qe 1 sin ωt kt (2.16) ( I I qe ) 1 sin ωt = I 0 + I 1 sin ωt (2.17) kt I 1 = I 0qE 1 kt (2.18) V D I D 0 V B V D I D = V D V B V D V B r (1) E V (2) R L E V (2.19) R 0 E V R L (1) E V = R LE R L + R 0 (2.20)

20 18 c E R 0 E V R 0 E V R L V R 0 R L E V R 0 = V R L + I D = V R L + V V B r (2.21) V V = R L (R 0 V B + re) R L R 0 + rr L + rr 0 (2.22) (2.20) (2.22) R L E = R L (R 0 V B + re) (2.23) R L + R 0 R L R 0 + rr L + rr 0 E = ( 1 + R ) 0 V B (2.24) R L R L E R L + R 0 V = R L (R 0 V B + re) R L R 0 + rr L + rr 0 ( 1 + R 0 E R L ) V B E ( 1 + R ) (2.25) 0 V B R L (2) E (2.22) R L R 0, r R L R 0 + rr L + rr 0 R L (R 0 + r) (2.26) V = R L (R 0 V B + re) R 0V B + re R L R 0 + rr L + rr 0 R 0 + r (2.27) (1) (2) pn 1 R 0 r V V B

21 c (3) pn p n (4) pn (5) (6) (7) (8) (9) n p (10) (11) (12) (13) (14) pn n p 2.2 (1) (2) (3) (4) (5) pn n p (6) (7) (8) pn (9) (8) pn (10) (9) (11) (3) (12) (11) (13) (11) (14) (15) (16) (15) A (a) K (b) (c) (1) 2.4 A K (2) 2.4 (a) A K n

22 20 c (3) 2.4 (b) (4) 2.4 (c) (5) pn A B C (a) (b) (c) 2.5 (a) pn 2.5 (b) [1] [2] [3] [3] [2] [4] 2.5 (c) A [2] [5] [3] [6] [7] (1) [1] [7] p n (2) A (3) [7] 2.5 B C pn (B) (A) (1) 2.6 E F (2) 2.6 (A)

23 c (3) 2.6 (B) (4) pn pn E F E F 禁制帯 (1) (2) (3) (4) I V B B A C 0 V (1) A

24 22 c (2) B (3) B (4) C 2 (5) V B (6) C pn (1) (2) V [V] I [ma] (1) (2) (a) pn 2.9 (b) R 20 Ω E 1.20 V I [ma] V D [V] (a) 1.2 E I (b) R V D (1) 2.9 (b) E I R V D (2) (1) 2.9 (a) (3) 2.9 (b) V D I (2) V D I 2

25 c pn R 10 Ω I V R V D (1) 2.10 V 1.00 V 40 ma (2) 2.10 I 0 (3) 2.10 I 80 ma V E 10.0 V R kω R kω D A V 4.00 V R 2 A D E R 1 R2 R 3 V (1) D I D (2) D V D (3) A V A (4) R 1 I 1 (5) R 2 I 2 (6) R pn V V I T 300 K (1) V V I I /I

26 24 c (2) V I I I 10 V 2.13 pn 300 K 0.60 V 4.0 ma E g exp( qe g /kt ) (1) I s(300) (2) 323 K(50 C) I s(323) (3) 323 K 0.60 V (4) 273 K 0 C) I s(273) (5) 273 K 0.60 V 2.14 pn I [ma] V [V] (1) 2.12 V V (2.28) V = V 0 + R 0 I (2.28) 2.2 V I (2.28) V 0 R V [V] I [ma] (2) pn 3

27 c (3) V V 0 I pn 2.13 V 0 V D 0.60 V 500W 900W V 500W D 100W pn p /m 3 p n n n0 p p0 n p0 exp(qv/kt) [B] [A] n p p n0 x (1) [A] 0 (2) [B] (3) p [A] 3 (4) pn p 2 (5) p p p0 3

28 26 c (6) p n p0 3 (7) V [A] ( x ) = 0 p n p0 exp qv kt V x = 0 p n p(0) 3 (8) V x = 0 p p p (0) p p p0 [B] V p p (0) pn J D n D p n p dn dp J = qd n qdp dx dx (2.29) (1) n n n 0 p (2.30) x V T L ] p = p 0 [e qv kt 1 e L x + p 0 (2.30) n J x J (x) (2) (3) n J x 2.18 [1] [5] pn [1] [2] pn [3] [1] [2] [4] [2] [5] 2.19 pn ϕ D N A N D n i ϕ D = kt q ln N AN D n i 2 (2.31)

29 c pn W d ε r W d = 2εrε 0 (N A + N D ) ϕ D qn A N D (2.32) (1) /m /m 3 pn ϕ D 3 (2) (1) pn W d pn C J ϕ D C 0 V C J = C 0 ϕd ϕ D V (2.33) (1) V 1 C J 2 ϕ D (2) V C J 2.3 C 0 ϕ D V C J 0.36 V 36 pf 0.80 V 30 pf 2.21 pn C J [F/m 2 ] qεr ε C J = 0 N A N D 2 (N A + N D ) 1 ϕd V (2.34) ε r ε 0 N A N D ϕ D V Si N A = N D = /m 3 V 0.0 V 7.18 pf pn 100 µm 100 µm (1) C J C 0 (2) ϕ D (9.40)

30 28 c (3) 0.50 V (4) 5.0 pf (5) pn W d C J C J = ε rε 0 W d (2.35) V 0.0 V 2.22 C pf ϕ D 0.78 V pn N A N D N (1) pn C J ϕ D C 0 V C J = C 0 ϕd ϕ D V (2.36) C J 2.6 pf V 2 (2) ϕ D k T q n i N D N A ϕ D = kt q ln N AN D n i 2 (2.37) N 2 (3) pn W 2εrε W = 0 (ϕ D V ) NA + N D (2.38) q N A N D ε 0 ε r W 2 (4) pn S C J C J = ε r ε 0 S W (2.39) pn S pn V V V B [1] V B [2] [1] [3] [4] [3] [1] [5] [4] [1] [6] [3] [7] [8]

31 c [9] [D] [1] [10] (a) 2.15 (b) I D I D R I V D V R L 0 V B (a) V D (b) (1) 2.15 (a) (2) 2.15 (a) 2 (3) E V E R R L V B (4) E V E R R L V B (5) 2.15 (b) E

32 30 c npn V BE I B I C V CE 3.1 h re V BE [V] I B [µa] I C [ma] V CE [V] (1) 3.1 h fe (2) 3.1 h ie (3) 3.1 h oe 3.1 (1) V CE = 12.0 V h fe = I C I B VCE =0 = 2.75 ma 2.50 ma 11.0 µa 10.0 µa = 0.25 ma 1.0 µa = 250 (3.1)

33 c (2) V CE = 12.0 V h ie = V BE V V = I B 11.0 µa 10.0 µa = V = 3.0 kω (3.2) 1.0 µa VCE =0 (3) I B = 10.0 µa h oe = I C = V CE IB = ma 2.47 ma 12.0 V 10.0 V = 0.03 ma 2.0 V = 15 µs (3.3) 3.2 h h fe = 200, h ie = 5.5 kω, h re = , h oe = 10 µs T T (r B, r E, r C, α) h h ie r B + r E 1 α h fe α 1 α r E (3.4) (3.5) h re (1 α) r C (3.6) 1 h oe (1 α) r C (3.7) 3.2 (3.5) (3.6) (3.7) α = h fe h fe + 1 = (3.8) 201 (3.7) (3.8) r C = (3.4) (3.8) (3.9) r B = h ie r E = h re = = 25 Ω (3.9) h oe 10 µs 1 = h fe + 1 = MΩ (3.10) (1 α) h oe h oe 10 µs r E 1 α = h ie h re (h fe + 1) = 5.5 kω = 475 Ω (3.11) h oe 10 µs

34 32 c V BE = ( Ω) I B V (3.12) I C [ma] I B = 30 ma I B = 20 ma I B = 10 ma V CE [V] (1) (1) V CE 6.0 V I B 20 µa β (2) (1) α 3 (3) (3.5) 2 L nb 20 µm I C R L R B I B V CE V CC V BB V BE (2)

35 c (4) 3.2 V CC 12.0 V R L 1.5 kω I B 20.0 µa 21.0 µa V BE V BE (5) 3.2 I B 20.0 µa 21.0 µa V CE V CE (6) 3.2 V CE / V BE (7) 3.2 I C(sat) V CE(sat) 0.10 V 3.3 (1) (2) (3) W B = 2 (1 α) L nb = β = I C 4.0 ma = = 200 (3.13) I B 20 µa α = (4) (3.12) (5) (6) β β + 1 = (3.14) β + 1 L nb = 20 µm 2.0 µm (3.15) 201 V BE = Ω I B = Ω 1.0 µa = 4.0 mv (3.16) V CE = V CC R L I C = V CC R L βi B (3.17) V CE = R L β I B = 1.5 kω µa = 0.30 V (3.18) V CE = 0.30 V = 75 (3.19) V BE 4.0 mv

36 34 c (7) (3.17) I C = I C(sat) V CE = V CE(sat) I C(sat) = V CC V CE(sat) R L = 12.0 V 0.10 V 1.5 kω = 11.9 V 7.9 ma (3.20) 1.5 kω 3.4 β β 0 β = ( ) (3.21) 2 f 1 + (1) β f β f T (2) f f β β f = β 0 f β f β 3.4 (1) f = f T β = β 0 ( ft f β ) 2 = 1 (3.22) (2) f f β f T = ( f 1 + β f β (3.23) f β ) 2 f f β (3.24) β 0 β = ( f 1 + f β ) 2 β 0f β f (3.25)

37 c h oe I C V A V CE 3.5 h oe 3.3 I C = 0 V A 1 h oe = I C V A + V CE I C V A (3.26) I C -V A 0 V CE (1) npn n (2) (3) (4) (5) (6) npn (7) (8) 1 (9) (10) (11) (12) h L.1

38 36 c (13) h (14) (15) β 1 β (16) pn (17) (18) (19) 0 (20) 3.2 (1) (2) 1 2 (3) 1 2 (4) 1 (5) (6) 0 (7) (8) (9) pn (i) (ii) (iv) (v) n p n p n p (iii) (vi) (a) (b) (c) (d) (1) 3.4 (a) pnp npn (2) 3.4 (c) pnp npn (3) (i) (vi) (4) (i) (vi) (5) (i) (vi)

39 c npn npn (a) (b) (c) (a) (b) (d) (d) (e) (d) (f) (g) (h) (d) (g) (i) (d) (j) (d) I E (d) I C (g) (f) I B I E, I C, I B (A) (1) (a) (i) n p (2) (A) 3.5 npn E F (1) (2) (3) (1) (2) E 1 E 2 )

40 38 c I 1 A A E 1 V V 1 V V E 2 2 I (3) V 1 I 1 V 1 (4) V 2 I 2 V I B I C VBB V BE V CE V CC (1) (2) V BE I B V BE (3) V CE I C V CE 3.9 α β 3.10 β = α 1 α (3.27) β 200 (1) α 3 (2) 10 µa 2 (3) 3.0 ma (1) 3.8 (2) V CE 10 V I B 20 µa β

41 I C [ma] c I B = 30mA I B = 20mA I B = 10mA V CE [V] (3) (2) α 3 (4) β f T 1 f T (5) α W L α ( W L ) 2 (3.28) (3.28) 2 L 20 µm I C [ma] V CB [V] (a) I C [ma] V CE [V] (b) (1) 3.9 (a) (2) 3.9 (b) (3) 3.9 (a) (4) 3.9 (b)

42 40 c β R B I B I C R C V BB V BE V CE V CC (1) V CC V BC I C R C (2) I C (3) I B I C (4) I C V CE (5) I B V CE (6) V BE I B V BE h ie 3.14 V CE V BE β V CC 10.0 V R C 5.00 kω V BE I B [ ( ) ] qvbe I B = I B0 exp 1, I kt B0 = A (3.29) (1) V BE V a I B 3 b I C 3 c V CE 3 (2) V CE 9.0 V a I C 3 b I B 3 c V BE 3 (3) V CE 0.10 V

43 c R B I B I C R C V BB V BE V CE V CC a I C 3 b I B 3 c V BE (a) 3.12 (b) R C 2.0 kω V CC 10.0 V I B 5.0 µa I B [A] V BE [V] V BE = ( Ω) I B V (3.30) I C [ma] V CE [V] (a) I B = 10mA 7.5mA 5.0mA 2.5mA 0.0mA R B I B I C R C V V BB V CE BE (b) V CC (1) 3.12 (a) (2) (1) E F (3) 3.12 (b) V CE V CC R C I C (4) 3.12 (b) I B 5.0 µa V BE (5) 3.12 (b) I B 5.0 µa I C (6) 3.12 (b) I B 5.0 µa V CE (7) 3.12 (b) I B 5.0 µa 5.5 µa V BE V BE

44 42 c (8) 3.12 (b) I B 5.0 µa 5.5 µa I C I C (9) 3.12 (b) I B 5.0 µa 5.5 µa V CE V CE (10) 3.12 (b) V CE / V BE I r I B r B b I B I C V V D V BE B E V D C E V BE (a) (b) (1) 3.13 (a) I V D q k T I 0 (2) 3.13 (a) V V D I r (3) 3.13 (a) V k T q I 0 r I (4) r D r D = dv di (3.31) 3.13 (a) r D k T q r I I I 0 (5) 3.13 (b) 2 (1) (4) r i I C I B h 3.18 h (1) v BE v CE, i B h (h ie, h fe, h re, h oe) (2) i C v CE, i B h

45 c B C B C h ie h re v CE h fe i B h oe h ie h re v CE h fe i B h oe E B (a) E C E B (b) E C h ie h re v CE h oe h fe i B h ie h re v CE h oe h fe i B E (c) E E (d) E (3) T (r B, r E, r C, α) h h ie r B + r E (3.32) 1 α h fe α (3.33) 1 α r h re E (3.34) (1 α) r C 1 h oe (3.35) (1 α) r C T h (4) h h fe = 200, h ie = 5.5 kω, h re = , h oe = 10 µs T (a) h 3.15 (b) h ie = 3.49 kω h fe = 120 h oe = 24.0 µs h re = i B 49.0 µa v CE 5.00 V (1) 3.15 (a) v BE (2) 3.15 (a) i C (3) 3.15 (b) v BE (4) 3.15 (b) i C (a) 3.16 (b) (a)

46 44 c i B i C i B i C v BE B E h ie h re v CE h fe i B h oe C E v CE v BE B E C h ie h fe i B E v CE (a) h パラメータ等価回路 (b) 簡易等価回路 B i B i C C B i B i C C h ie v BE h fe i B v BE h ie h fe i B v CE v CE R L E (a) E E (b) E (1) 3.16 (a) v BE i B (2) 3.16 (a) i C i B (3) 3.16 (b) v CE i C R L (4) 3.16 (b) v CE v BE 3.21 h ie h ie = V BE I B (3.36) (1) T [K] I B I B I B0 exp ( qvbe kt ) (3.37) h ie I B (2) (1) I B 10 µa h ie 3.22 h oe h oe = I C V CE (3.38)

47 c V A 3 [ ] I C = 1 + V CE I V C0 (3.39) A (1) (3.38) (3.39) h oe (2) I C0 3.0 ma V A 100 V h oe g m r π r o B i B i C C v BE r p g m v BE r O v CE E E (1) 3.17 v BE i B v CE r π r o g m (2) 3.17 i C v BE v CE r π r o g m (3) h 3.17 r π r o g m (4) h q k T β 0 V CE V A 5 I B ( ) qvbe I B = I 0 exp (3.40) kt [ ] I C = β V CE I V B (3.41) A h h ie = V BE I B, h re = V BE V CE, h fe = I C I B, h oe = I C V CE (3.42) C D (a) 5 V A 48

48 46 c (5) (3) (4) 3.17 V A V CE r o = V A + V CE I C g m = qi C kt V A I C (3.43) (3.44) r π = β 0 g m VA + V CE V A β 0 g m (3.45) 3.24 α 0 α f α β 0 β f β α 0 f α = β 0 f β (3.46) β β β = 0 ( ) 2 f 1 + f β (3.47) α α f α 100 MHz (1) β 0 (2) β f β (3) f 4.6 MHz β b i B i B r B i C B C v BE r E (1-a) r C v CE E E (1) 3.18 (2) 3.19

49 c B C r B C BE C E g p C BC g m v BE E E (3) 3.19 C E (4) C BC 3.19 α f α 6 C π C E C BE f α = g m 2πC π (3.48) f α 1.6 GHz g m 50 ms C π (a) 3.20 (b) V CC 9.5 V R L 4.7 kω 2 I C I C [ma] 5 I B = 4 20mA V CE [V] (a) 15mA 10mA 5mA 0mA R B V BB I B V BE (b) V CE R L V CC (1) I C(sat) V CE(sat) 0.10 V (2) I B 3.27 h FE V CC 10.0 V R C 1.0 kω I B (P.7)

50 48 c I C R C I B V CE V CC (1) V CE(sat) 0.0 V I C(sat) (2) 3.21 I B I C V CE 3.22 I C [ma] I B [ma] V CE [V] I B [ma] I C 0 0 A B V CE (1) 3.23 A 3.24 (a) (c) (2) 3.23 B 3.24 (a) (c)

51 c (a) (b) (c) (a) V in 3.25 (b) V out 3.25 (b) 3.25 (b) (i) 2 (ii) 3 (i) 4 (ii) 5 (ii) 3 β (ii) I B I B > 6 (3.49) 3.25 (a) V in 0 V out 3.25 (b) (iii) V CC V in R L V 1 0 t V in V out V out (i) (ii) (iii) V CC (a) 0 (b) t V CC βr βv CC L R L R L βv βr L CC V CC

52 50 c β V CE 6.0 V V CC 12.0 V R C 2.0 kω V CC R B R C (1) I C (2) I B (3) I B V BE [ I B = I B0 (4) R B exp ( qvbe kt ) ] 1, I B0 = A (3.50) V CC 10.0 V R C 2.0 kω α 1 R E I E I C R C V BB V BE V CB V CC (1) 3.27 I E pn pn ( ) qvbe I E I E0 exp (3.51) kt I E A V BE V I E 3 (2) V BE V V CB

53 c (3) V BE V I E 3 (4) V BE V V CB (5) V BE V V V CB / V BE V CC 10.0 V R E 2.00 kω β 199 I B [ ( ) ] qvbe I B = I B0 exp 1, I kt B0 = A (3.52) I B V in V CC VBE R E I E V out (1) V BE V a I B b I E c V out d V in (2) I B 14.0 µa a V BE b I E c V out d V in (3) (1) (2) 6.0 V A v A v V in V out A v = V out V in (3.53) ω j

54 52 c i B B r B i C C g m v B'E v BE v B'E r p C r O p v CE E E (1) v BE r i B r π C π g m r o B (2) v B E r v B r π C π g m r o BE (3) v CE = 0 i C v B E r B r π C π g m r o (4) v CE = 0 i C h i fe r B r π C π g m r o B (5) h fe h FE r B r π C π g m r o (6) h fe = h FE ω β r B r π C π g m r o 2 (7) h fe = 1 ω T r B r π C π g m r o g m r π 1

55 c MOSFET MOSFET (4.22) (1) g m (2) g D (3) g m (4) I Dsat V P (5) g m V G, V th, I Dsat (6) g D 4.1 (1) (2) g D = I D V DS = g m = I D V G = V DS V G [ [ β V G V th V ] ] DS V DS = βv DS (4.1) 2 [ β [ V G V th V DS 2 ] V DS ] = β (V G V th V DS ) (4.2)

56 54 c (3) g m = I D V G = [β (V G V th ) 2 ] = β (V G V th ) (4.3) V G 2 (4) V P = V G V th (5) I Dsat = β V P 2 2 (4.4) β = 2I Dsat (V G V th ) 2 (4.5) (6) g m = β (V G V th ) = g D = I D V DS = V DS 2I Dsat V G V th (4.6) [β (V G V th ) 2 ] = 0 (4.7) n MOSFET W 10 µm L 2.0 µm t 50 nm V th 1.0 V MOSFET µ S m 2 /(V s) (4.11) (4.12) (1) MOSFET C OX (2) (4.11) β (3) V G 1.0 V V P (4) V G 1.0 V V DS 1.0 V I D (5) V G 1.0 V V DS 3.0 V I D (6) V G 3.0 V V P (7) V G 3.0 V V DS 3.0 V I D

57 c (8) V G 3.0 V V DS 5.0 V I D 4.2 (1) (2) (4.12) (3) C OX = ε OX = F/m F/m 2 (4.8) t OX 50 nm β = µ SW C OX L = m 2 /(V s) 10 µm F/m µm = S/V (4.9) (4) V DS < V P [ I D = β V P = V G V th = 1.0 V ( 1.0 V) = 2.0 V (4.10) V G V th V DS 2 = S/V ] V DS [ 1.0 V ( 1.0 V) 1.0 V 2 ] 1.0 V 0.26 ma (4.11) (5) V DS > V P (6) I D = β (V G V th ) 2 = (1.0 V ( 1.0 V))2 S/V 2 2 = 0.35 ma (4.12) (7) V DS < V P V P = V G V th = 3.0 V ( 1.0 V) = 4.0 V (4.13) I D = S/V [ 3.0 V ( 1.0 V) 3.0 V 2 ] 3.0 V 1.3 ma (4.14)

58 56 c (8) V DS > V P I D = β (V G V th ) 2 = (3.0 V ( 1.0 V))2 S/V 2 2 = 1.4 ma (4.15) 4.3 MOSFET 4.1 MOSFET V DS 8.0 V V DS = 8.0V I D [A 1/2 ] V G [V] (1) MOSFET V th 2 (2) V G 4.0 V I D (3) V G 2.5 V g m 4.3 (1) I D 0 V G V th 4.1 V th = 0.50 V (4.16) (2) 4.1 V DS 8.0 V V th 0.50 V MOSFET I D = β (V G V th ) 2 2 (4.17)

59 c β = S/V (4.18) (3) I D = β (V G V th ) 2 2 g m = I D V G = = S/V (4.0 V 0.50 V)2 2 = 4.9 ma (4.19) [β (V G V th ) 2 ] = β (V G V th ) (4.20) V G 2 g m = S/V (2.5 V 0.50 V) = 1.6 ms (4.21) (a) MOSFET 4.2 (b) 4.2 (b) µ 4.2 (a) G i D D G - r D i D D v G g m v G r D v G mv G + S (a) S S (b) S (a) i D = v DS r D + g m v G (4.22) 4.2 (b) i D = v DS + µv G r D (4.23)

60 58 c µ = g m r D (4.24) µv G = r D g m v G = µ = g m r D (4.25) 4.5 n N D /m 3 ϕ D 0.80 V GaAs MESFET V G 0 I D V n GaAs ε r ϕ D < a2 qn D 2ε (4.26) a > 2εϕ D = 12 F/m 080 V qn D C /m µm (4.27) 4.1 (1) FET (2) FET (3) FET n p (4) n FET (5) FET (6) FET (7) FET (8) n MOSFET (9) p MOSFET (10) MOSFET pn (11) MOSFET (12) p MOSFET p (13) MOSFET

61 c (14) MOSFET (15) MOSFET (16) MOSFET 0 (17) n MOSFET (18) MOSFET (19) FET (20) FET (21) (22) (23) GaAs MOSFET 4.2 (1) FET (2) FET (3) 0 I D FET (4) 0 I D 0 FET (5) MIS (6) MIS 4.3 MOSFET 1 (1) (2) (3) (4) (5) 4.4 p MOS (A) (J) (1) (10) (A) (B) (C) (D) (E) (B) (F) (G) (E) (H) (I) (J)

62 60 c p MOS V G (A) (B) (C) (B) (i) V G < 0 (ii) 0 < V G < V th (iii) V th < V G 4.3 (1) 4.3 (i) (2) 4.3 (ii) (3) 4.3 (iii) (4) 4.3 (i) A (5) 4.3 (ii),(iii) B (6) 4.3 (iii) C (7) 4.3 (iii) C V th p MOS V G 0 E F M O S E F E F (1) V G (2) V G 4.4 (3) V G (4) V G 4.4 (5) V G (6) V G 4.4 (7) (3) (5) V G

63 c n MOSFET I D G V DS I D = (i) (4.28) G W L t σ G = (ii) (4.29) σ q n µ σ = (iii) (4.30) Q t n q Q = (iv) (4.31) (4.30) (4.31) n σ = (v) (4.32) (4.29) (4.32) G = (vi) (4.33) (4.28) (4.33) I D = (vii) (4.34) Q C ox V G V DS V th C ox Q = (viii) (4.35) (4.34) (4.35) MOSFET I D = (ix) (4.36) V DS 0 V DS (4.36) I D 0 V DS (x) I D V DS (x)

64 62 c (4.36) V DS I D MOSFET ( ) 2 (x) I D = β 2 (1) (i) (x) (2) V th (3) (x) (4) (4.37) β (4.36) (5) (4.36) (6) (4.37) (4.37) 4.8 MOSFET 4.5 (a) (d) 4.6 (e) (h) 4.7 (i) (l) (1) p MOSFET (2) n MOSFET (3) p MOSFET (4) n MOSFET 0 I D (a) V G > 0 V G = 0 V G < 0 V DS 0 I D (b) V G >> 0 V G > 0 V DS V DS V G < 0 V G << 0 (c) 0 I D V DS V G > 0 V G = 0 V G < 0 (d) 0 I D (1) 0 V G I D I D 0 I D (e) V G 0 0 (f) (g) V G I D (h) V G (2) V G V DS n MOSFET

65 c (i) (j) (k) (k) (3) V DS V DS オフ (A) 領域 (B) 0 V th V G (1) 4.8 (A) (2) 4.8 (B) (3) (a) MOSFET V G I D 4.9 (a) (i) 4.9 (b) I D (iv) (i) (ii) (iii) 0 (a) V G (b) (1) MOSFET (2) MOSFET n p (3) 4.9 (a) (ii) (4) 4.9 (a) (iii) (5) 4.9 (a) (iv)

66 64 c FET 4.10 (a) 4.10 (b) 4.10 (c) (i) V 1 I 2 (iii) (ii) (a) V 2 0 I 2 V3 (b) DI 2 DV 1 V 1 I 2 I 4 0 (A) V 4 (c) (B) V (1) 4.10 (a) (i) (iii) (2) 4.10 (b) V 3 (3) 4.10 (b) I 2 V 1 (4) 4.10 (c) (A) (5) 4.10 (c) (B) (6) 4.10 (c) V 4 (7) 4.10 (c) I MOSFET β [S/V] (4.38) I D [ I D = β V G V th V DS 2 ] V DS (4.38) 2.0mA I D V DS = 3.0V 2.0mA I D V G = V 0 V V G V 0 2.0V V DS (1) MOSFET n p (2) MOSFET (3) MOSFET V th (4) V G V 0 I Dsat

67 c (5) V G V 0 V P (6) V 0 (7) (4.38) β (8) V G (5) V 0 V DS 1.0 V I D MOSFET I D [ma] V G = 0.3V V G = 0.0V V G = -0.2V V DS [V] 4.12 (1) MOSFET (2) V G 0.0 V (3) MOSFET V th (4) V G 0.50 V I Dsat 4.14 MOSFET [ I D = β V G V th V ] DS V 2 DS (4.39) n MOSFET β 5.0 ms/v V th 1.0 V MOSFET (1) MOSFET (2) V G 5.0 V V P (3) V G 5.0 V V DS 2.0 V I D (4) V G 5.0 V V DS 8.0 V I D (5) V G 5.1 V V DS 8.0 V I D (6) V G 5.0 V V DS 8.0 V

68 66 c g m g m = I D V G (4.40) VDS = n MOSFET (B) I D = β 2 (V G V th ) 2 (4.41) I D [ma] (A) (B) 20 V G = 2.5V V G = (C) 8 V G = 2.0V 4 V G = 1.5V V DS [V] 4.13 (1) (A) (2) (B) (3) V G 2.0 V V P (4) MOSFET V th (5) (4.41) β 2 (6) V G 1.75 V V DS 5.0 V I D 2 (7) (C) V G V DS MOSFET I D = W µcox L [ V G V th V DS 2 ] V DS (4.42) I D V G W µ C ox L 10 µm 2.0 µm 50 nm V th 1.0 V n MOSFET µ S m 2 /(V s) 1 1 µ n

69 c (1) MOSFET (2) C ox (3) V G 1.0 V V P (4) V G 1.0 V V DS 1.0 V I D (5) V G 1.0 V V DS 3.0 V I D (6) V G 3.0 V V P (7) V G 3.0 V V DS 3.0 V I D (8) V G 3.0 V V DS 5.0 V I D 4.17 MOSFET 4.14 I D [ma] V G = 3.5V V DS [V] MOSFET MOSFET [ I D = β V G V th V DS 2 ] V DS (4.43) (1) MOSFET V th 2 (2) MOSFET β 2 (3) V DS 3.0 V 4.0 V 5.0 V 6.0 V I D MOSFET MOSFET V DS 8.0 V ID (1) MOSFET n p (2) MOSFET (3) MOSFET (a) MOSFET I D MOSFET

70 68 c x x x 10-2 I D [A 1/2 ] V DS = 8.0V 0 V G [V] I [A 1/2 D ] V DS = 10.0V 3.0 x x x V G [V] (a) I Dsat 0 I D V G = 2.75V V 0 (b) V DS MOSFET V th β I D = β (V G V th ) 2 2 (4.44) g m g m = I D V G (4.45) (1) MOSFET V th (2) MOSFET β (3) V DS 10.0 V V G 1.75 V MOSFET g m (4) V G 2.75 V MOSFET 4.16 (b) V 0 (5) 4.16 (b) I Dsat 4.20 MOSFET 4.1 (1) MOSFET V th (2) MOSFET β (3) 4.1 (A) (4) 4.1 (B) (5) V G 2.50 V V DS 1.0 V I D

71 c V DS = 4.00 V V G [V] I D [ma] (A) (B) (6) V G 2.50 V V DS 3.0 V I D 4.21 V DS MOSFET I D V G [ I D = β V G V th V ] DS V 2 DS (4.46) β MOSFET g m g D g m = I D V G (4.47) g D = I D V DS (4.48) (1) (4.46) V th (2) (4.46) (3) (2) g m (4) (2) g D (5) V DS V P I D I Dsat V P (6) (5) I Dsat (7) V P V G V th (8) V P < V DS (9) V P < V DS (10) (9) I Dsat V P (11) (9) g m (4.46) (12) (11) g m V G, V th, I Dsat (13) (9) g D

72 70 c MOSFET 4.17 MOSFET I D = β 2 (V G V th ) 2 (4.49) R L I D V DS V DD V G (1) I D V DD V DS R L (2) V G V G0 V DS V DS0 V DS0 V G0 V DD R L β V th (3) V G V G0 + V G V DS V DS0 + V DS V DS V G0 V G V DD R L β V th V G V DS 4.23 MOSFET I D V G V DS I D = g m V G + g D V DS (4.50) g m g D MOSFET V G 1.40 V V DS 4.0 V I D 6.4 ma (1) V DS 4.0 V V G 1.41 V I D 7.1 ma g m (2) V G 1.40 V V DS 10.0 V I D 6.7 ma g D 4.24 MOSFET I D V DS I D 2 λ 2 82

73 c I D = β 2 (V G V th ) 2 (1 + λv DS ) (4.51) (1) g D g D = (2) g D I D I D V DS (4.52) 4.25 MOSFET 4.18 MOSFET I D = β 2 (V G V th ) 2 (4.53) V DD 30.0 V R D 750 Ω MOSFET V th 0.50 V I D V DS R D V G V DD (1) V DD V DS R D I D (2) V G 1.50 V I D 20 ma (4.53) β (3) V G 1.60 V I D (4) V G 1.50 V V DS (5) V G 1.60 V V DS (6) V G V DS V DS V DS V G 4.26 n MOSFET R D V DD 4.19 V DD 12.0 V V G 0.40 V I D 1.6 ma V DS 10.4 V V G 1.20 V I D 6.4 ma V DS 5.8 V MOSFET

74 72 c I D R D V DS V DD V G (1) 4.19 MOSFET (2) V DD R D I D V DS (3) R D (4) V th (5) β (6) V G 0.0 V V DS (a) V G V DD V DS V DS0 V DS I D V th β [ I D = β V G V th V DS 2 ] V DS (4.54) I D I D (B) V G = V DD R D V DD (A) V G (a) 回路図 0 V DS0 (b) 電圧電流特性 V DS (1) (4.54) g m g m = I D V G (4.55)

75 c (2) V G = V DD V DS = 0 g m VDS =0 (3) 4.20 (b) B MOSFET V DS = 0 B g m (4) 4.20 (b) (A) V DS V DD I D R D A (5) A B V DS V DS0 V DS V DD R D V DS V G (1) V DS I D R D V DD (2) V G V DD V DS0 MOSFET β [S/V] V th [ I D = β V G V th V ] DS V 2 DS (4.56) (3) V DD 5.0 V R D 8.0 kω β 5.0 ms/v V th 1.0 V (2) V DS0 2 (4) V G V DD I DS0 (3) 2 (5) (2) V DS0 V DD R L β (V DD V th ) (4.57) (3) V DS (a) V G V DS 4.22 (b)

76 74 c I D V DD V DD V DS V G V DS (a) 0 V 1 V 2 (b) V G MOSFET [ β V G V th V ] DS V I D = 2 DS, V DS < V G V th β (4.58) 2 (V G V th ) 2, V DS > V G V th β R L V th V DD V G (1) V G < V 1 V DS = V DD V 1 (2) V 1 < V G < V 2 MOSFET V DS (3) V 2 < V G MOSFET V 2 (4) V 2 < V G V DS 4.30 n p 4.31 FET 4.23 (a) 4.23 (b) FET G S (A) n p D I Dsat I D p (B) V DS 0 V Dsat (a) (b) (1) 4.23 (a) FET FET

77 c (2) 4.23 (a) FET (3) 4.23 (a) FET (A) (B) (4) 4.23 (a) FET V G (5) 4.23 (b) V DS V Dsat V DS I D I Dsat V DS V Dsat 4.23 (a) (6) FET V G I D 4.32 (1) (2) (3) (4) (5) n 0 E F qf M qc qf S E F E F (1) qϕ M qϕ S (2) n qϕ D (3) qϕ D 4.24 (4) n 4.24 (5) n (1) 4.25

78 76 c (2) (a) (b) (c) 4.26 (3) E F qc qf M qf B qf D E F (1) qϕ M (2) qχ (3) qϕ B (4) qϕ D (5) E F (6) E F

79 c (a) (c) n + p n p (a) n + n + n + p (b) n + n + n i (c) (1) FET 4.28 (a) (c) MOSFET, JFET, MESFET (2) GaAs FET (1) 3 FET (3) GaAs FET 1 (4) JFET MESFET (A) 4.37 (J) JFET (A) MESFET (B) FET (C) (D) (E) (F) (G) (H) (D) (I) (I) (J) pn MOS GaAs MESFET

80 78 c C 30 SiO µm 0.30 µm d ox t B d ox = Bt (5.1) 5.1 d ox t d ox 2 t kg/m 3 SiO kg/m 3 N A /mol 5.2

81 c Si N Si SiO 2 Si N SiO2 N Si = kg/m /mol N SiO2 = kg/m /mol Si /m 3 (5.2) = /m 3 (5.3) /m (5.4) /m3 5.3 (1) d R l w (2) ρ d ρ d ρ s [Ω/ ] 150 Ω/ 100 µm 10 µm 5.3 (1) R = ρ l dw = ρ d l w (5.5) d R l w (2) R = ρ s l 100 µm = 150 Ω/ = 1.5 kω (5.6) w 10 µm

82 80 c (1) 1 (2) (3) (4) (5) CZ (6) ULSI VLSI (7) (8) TTL (9) pn (10) (11) (12) MOSFET JFET CMOS (13) CMOS n MOSFET (14) CMOS (15) CMOS (16) CMOS pn (i) (iii) インゴット ウェーハ (i) 回路作製 チップ パッケージ (ii) (iii) 封入

83 c (1) (2) 1 (3) 5.3 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (1) (8) (a) (e) 気体 Si Si 加熱 (1) SiH 4 + B 2 H 6 [ ] (2) O 2 + Ar [ ] (3) SiH 4 + AsH 3 [ ] (4) SiH 4 + NH 3 [ ] (5) H 2 O + Ar [ ] (6) SiH 4 [ ] (7) SiH 4 + PH 3 [ ] (8) SiH 4 + O 2 [ ]

84 82 c (a) Si (b) n-si, (c) p-si, (d) SiO 2, (e) Si 3 N 4, (a) (f) CVD イオン化した不純物 基板 O 2 金属 SiO 2 (a) (b) ヒーター シリコン基板 (c) 高融点金属 ドーパント 化学反応 Ar + (d) 基板 基板 (e) 基板 (f) (1) 3 (2) (3) (4) MOS (5) MOSFET

85 c (i) (ii) (iii) n + p n n + p + p + (vi) (iv) n + (v) (1) (i) (iii) (2) (iv) (3) (v) (4) (vi) (5) (iv) (6) (i) (ix) (1) (2) (3) (4) (5) (6) (7) (8) (9) MOS L 75 µm SiO 2 20 nm

86 84 c Si SiO 2 金属 (i) p (ii) n + p (iii) n + n p (iv) p + n n p + n n + p (v) n p + n n + n p + n n + p (vi) n p + p n n + n p + n p n + (vii) n + n p + p n n + n p + n p n + (viii) n n + p p + n + n n + n p p + n (ix) n + n p + p n + n p + n n n + p L p + n + n p + p

87 c ρ d ρ ρs [Ω/ ] d L 120 µm W 30 µm 160 Ω/ p n W L p p + n p + p d nmos 5.8 (i) (viii) (1) (2) (3) (4) Si 3 N 4 /SiO 2 (5) (6) (7) (8) 1

88 86 c Si SiO 2 Si 3 N 4 poly-si 金属 (i) p B (ii) p + p p + (iii) p + p p + B/As (iv) p + p p + (v) p + p p + As (vi) n + n + p + p p + (vii) n + n + p + p p + (viii) n + n + p + p p CMOS CMOS (1) p MOSFET (i) (ii) (2) (3) (iii)

89 c (i) (ii) p n + p + n p + p p + p n + p n + p (iii) CMOS 5.10 (i) (vii) (1) (2) (3) (4) n (5) (6) (7) (i) 1 (ii) 2 Si 3 N 4 SiO 2 3 Si 3 N 4 /SiO 2 4 (iii) 5 (iv) 1 6 (v) 2 3 (vi) 1 7 (vii) 8 9 CVD

90 88 c Si SiO 2 Si 3 N 4 poly-si 金属 P (i) n p B (ii) p p p p n p (iii) p n p p p p B (iv) p n p p p p (v) p n p p p p B/As (vi) n p n+ p+ p+ p p+ p n+ n+ p p (vii) p n+ p+ n p+ p p+ p n+ n+ p p

91 c λ max 1.12 ev 6.1 λ max = hc = J s m/s qe g µm (6.1) C 1.12 ev 6.2 V o 0.58 V I s 42 ma F F 0.82 P max 6.2 P max = F F V o I s = V 42 ma 20 mw (6.2) 6.3 (1) 650 nm (2) 650 nm

92 90 c (3) 650 nm 6.3 (1) (2) ν = c λ = m/s 650 nm Hz (6.3) E = hν = J s Hz = J (6.4) (3) J ev (6.5) C 6.4 GaAs 1.43 ev GaAs 6.4 λ = hc = J s m/s qe g = 869 nm (6.6) C 1.43 ev 6.5 l 300 µm 0.90 µm n 3.6 (1) (6.17) m (2) (6.17) m 1 λ 6.5

93 c (1) m = 2ln λ = µm µm = 2400 (6.7) (2) m 1 m + 1 = 2ln λ λ (6.8) 1 = 2ln λ λ 2ln λ (6.9) λ = λ nm (6.10) 2ln + λ 6.1 (1) (2) (3) (4) pin i (5) (6) p (7) (8) (9) CCD MOS (10) CCD (11) (12) (13) (14) (15) 1 (16) (17) 6.2 (1)

94 92 c (2) (3) (4) (1) (4) (1) (2) (3) (4) pn (A) (B) (C) (D) (E) (F) I I I I 0 (G) V 0 (H) V 0 (I) V 0 (J) V pn V I I 0 q k T ] I = I 0 [exp ( qv kt ) 1 (6.11) (6.11) I ph 11 (6.12)

95 c I sh (6.13) 10 I (1) 1 6 p n (2) 7 10 A J (3) 11 (4) CdS 2.50 ev CdS 6.6 (1) λ ν c (2) 1 E p [J] ν h (3) 1 E p [J] λ c h (4) E g [ev] λ max q h c µm (1) 1.31 µm (2) 1.31 µm 1 (3) 1.31 µm pn (1) (2) (A) (B) (3) (A) (B)

96 94 c A I 0 V B λ I ph 6.4 q h c λ [m] E g [ev] P [W] 光電流 I ph I max l max 波長 l (1) λ (2) P [W] λ [ [W] [J/s] (3) λ max (4) λ < λ max I ph λ (5) I max 6.11 LED 940 nm 10 mw LED (1) 940 nm 1 (2) LED 1 [ [W]

97 c [J/s] (3) 100% η LED η 95 % 1 (4) pn 1 1 pn 6.12 pn p n I I sh 0 V op V (1) 6.5 V op (2) 6.5 I sh (3) pn I = I 0 [ ( ) ] qv exp 1 kt (6.14) 6.5 (4) V V op I sh G 0 G 0 J G 0 I = J G 0 V (5) R 20 ma I I sh 25 ma V op 0.56 V

98 96 c V I [ ( ) ] qv I = I sh I 0 exp 1 kt (6.15) I R V (1) (6.15) I 0 (2) V (3) R R 25 Ω V SW V 0.56 V SW V 0.50 V ( ) ] qv I = I sh I 0 [exp 1 (6.16) kt SW V R (1) SW (2) I sh q k T I 0 V op (3) q k T I 0 V op I sh (4) (6.16) I 0 (5) I sh V op V I sh 250 ma R R 100 mw (1) F F

99 c R V (2) 200 ma ( ) ] qv I = I sh I 0 [exp 1 (6.17) kt 6.17 V I V [V] I [ma] (1) V op 3 (2) I sh 3 (3) P max 3 (4) F F CCD 6.9 CCD (1) 6.9 A A

100 98 c V 3 V 2 V 1 A A' V 1 V 2 V 3 (a) (b) (c) (d) (e) (f) (a) (2) CCD 6.10 (a) (f) V 1 V 2 V (a) (f) (3) CCD (4) CCD (5) CCD DRAM CCD X, Y, Z A, B, C In 0.2 Ga 0.8 N 2.67 ev In 0.2 Ga 0.8 N

101 c V 1 A V 1 V 2 V 3 V 2 B V1 V 2 V 3 V 3 V C V 3 V 2 1 X Y Z λ 600 nm E g (LED) (LD) LED LD 6.24 (LD) (A) (J)

102 100 c (A) (B) (C) (D) (D) (E) (D) (F) (F) 1 (B) (B) (G) (H) (I) (J) MOS 禁制帯 p AlGaAs p GaAs n AlGaAs (1) (2) (1) (3) (2) 6.26 (A) (B) (A) (B) (C) (D) (C) (D)

103 c DRAM a b C C S (1) C S V S a V DD 2 a V a C

104 102 c (2) C S 100 ff C/C S 10 V S V DD (3.3 V) (1) V 7.2 (1) C S V S + C V DD 2 = (C S + C) V (7.1) C S V S + 1 V = 2 CV DD C S + C (7.2) (2) (1) V S = V DD C S V = 1 + C 2C S 1 + C V DD = 6 11 C S 3.3 V = 1.8 V (7.3) MeV α DRAM V DRAM C S 7.3 α C = C (7.4) 0.50 V C S = C 0.50 V = F 0.45 pf (7.5) DRAM C Sp

105 c DRAM C St C St /C Sp k DRAM a a a a C sp ka C st C OX C Sp = C OX a 2 (7.6) C St = C OX ( a ka 2) (7.7) C St C Sp = 4k + 1 (7.8) 7.5 EPROM SiO ev 7.5 λ max = hc = J s m/s qe g = 415 nm (7.9) C 3.0 ev 7.1

106 104 c (1) SRAM (2) DRAM (3) DRAM SRAM (4) DRAM (5) (6) ROM (7) ROM (8) EPROM (9) EEPROM (10) ROM (11) (12) (13) 7.2 (1) (8) (1) (2) (1) (3) (1) (4) (5) (4) (6) (4) (7) (4) (8) (7) EEPROM ROM SRAM DRAM ROM EPROM RAM CMOS NOT CMOS SRAM 6 NOT V DD V DD

107 c A I V DD A 2 B C 3 MOSFET Q 1 MOSFET Q 2 4 Q 3 5 Q 4 6 A B 7 C 8 A V DD Q 1 Q 3 Q 2 Q 4 B C (A) (B) SRAM (C) (D) (E) (F) (G) (H) (I) ROM V DD (1) (2) (3) A (4) B C (5) MOSFET Q 1 MOSFET Q 2 Q 4 (6) (5) B C MOSFET (A) (Q)

108 106 c A V DD Q 1 Q 3 Q 2 Q 4 B C DRAM 1 DRAM DRAM α DRAM MOS DRAM V DD a b C C S (1) 7.6 DRAM a b

109 c (2) DRAM 7.6 a V DD 2 (3) C S V S a V V a C (4) V S V DD 3.3 V C C S 10 (3) V (5) V S 0.15 V V DD 3.3 V C C S 14 (3) V (6) DRAM α (7) DRAM α C S α C S 100 ff (8) DRAM 7.7 (a) (c) n + n + p (a) n + n + p (b) n + n + p (c) (9) 7.8 DRAM (1) DRAM V C S 100 ff 25 pa (2) DRAM (1) 7.9 DRAM 7.10 DRAM

110 108 c ROM W V B1 V B2 FET M 1 FET R L FET M 2 R D V DD V DD M 1 W M 2 B 1 B ROM EPROM SiO 2 SiO 2 n + p n + (A) (B) (1) (A) (B) (2) EPROM (A) (B) 7.9 (A) (B) (C) (J) EPROM (A) (C) (D) (B) (B) (E) (A) MOSFET (F) (A) (B) (E) (G)

111 c (B) (H) (I) (B) (J) α (3) EPROM (a) V G Q F Q I 7.10 (b) 7.10 (b) C U C D C U V U C D V D C U Q U C D Q D V G 制御ゲート フローティング ゲート C U V U Q F n + C D V D n + n + Q I (a) (b) (1) V G V U V D (2) V U Q U C U (3) V D Q D C D (4) Q U Q D Q F (5) Q D Q I (6) Q I V G C U C D Q F (7) Q F 0 Q I Q I0 Q F 0 Q I Q I0 V G + V G V G V G C U C D Q F (8) V G 3.3 V C U 2.6 ff C D 1.2 ff (7) V 0.50 V Q F (9) (8)

112 110 c EPROM Si SiO ev 7.16 EEPROM (A) (F) 7.11 EEPROM EEPROM (A) (A) (B) (C) (D) (E) (A) (B) (C) (D) (E) (A) (A) (F) (A) (B) n + n + SiO EEPROM (1) EEPROM (2) 7.12 EEPROM n + n + SiO (3) 7.12 EEPROM (4) EEPROM 7.12 MNOS MNOS

113 c (5) MNOS EEPROM (a) (n) (a) FET V SS B (b) FET 3 FET FET 7 8 W W V SS B B V SS B V SS B (a) (b) (a) (b) (c) (d) NAND (e) (f) NOR (g) (h) (i) (j) NOR (k) (l) NAND (m) (n)

114 112 c HEMT (1) (2) (3) HEMT (4)

115 c (1) (2) (3) 2 (4) (8.5) SIT 83 (4.16) (4.17) SIT g m g D 8.4 ( ) g m = d I 0 exp qη ( ) V G + V DS µ = qη dv G kt kt I 0 exp qη V G + V DS µ = qηi D kt kt g D = d dv DS (8.1) ( ) I 0 exp qη ( ) V G + V DS µ = qη kt µkt I 0 exp qη V G + V DS µ = qηi D kt µkt (8.2) 8.5 v sat 10 5 m/s f 50 GHz l (8.6) l v sat 2f = 105 m/s = 1 µm (8.3) 2 50 GHz

116 114 c β 1 β 2 C B b 1 b 2 E I C2 C I B2 B b 1 b 2 I C1 I E1 = I B2 E 8.2 I C1 = β 1 I B1 (8.4) I C2 = β 2 I B2 (8.5) I B2 = I E1 = I C1 + I B1 = (β 1 + 1) I B1 (8.6) I C1 + I C2 = β 1 I B1 + β 2 I B2 = β 1 I B1 + β 2 (β 1 + 1) I B1 = (β 1 β 2 + β 1 + β 2 ) I B1 (8.7) I C1 + I C2 I B1 = β 1 β 2 + β 1 + β 2 (8.8) 8.7

117 c p r B1 2 p r B2 V P I E V E V BB I E E p B 1 n B 2 E B 2 B 1 0 V P V E (a) 構造 (b) 図記号 (c) 特性 8.7 I E 1 p V E V E = r B1V BB r B1 + r B2 (8.9) V E pn V E = V E V E V P V P = r B1V BB r B1 + r B2 (8.10) v i 1 i 2 v i 1 i 2 0 v G v G

118 116 c l 2.0 cm w 2.0 mm d 0.50 mm V x 25 mv x I x 1.0 ma 0.20 T B z V y 25 µv (1) (2) (3) (4) 9.1 (1) R H = wv y 2.0 mm ( 25 µv) = B z I x 0.20 T 1.0 ma = m 3 /C (9.1) (2) R H < 0 n n = (3) x R x 1 q R H = C m 3 /C = /m 3 (9.2) R x = V x 25 mv = = 25 Ω (9.3) I x 1.0 ma

119 c (4) σ σ = l R x wd = 2.0 cm 25 Ω 2.0 mm 0.50 mm = S/m (9.4) σ = qµn = µ R H (9.5) µ = σ R H = S/m m 3 /C = 0.20 m 2 /(V s) (9.6) 9.2 N D /m 3 N A /m 3 pn 300 K ϕ D (9.40) ϕ D = kt q ln N DN A n i 2 = J/K 300 K C ln /m m 3 ( /m 3) 2 = 1.05 V (9.7) n n (1) N D (2) 190 (9.42) E g (3) (4) 190 (9.41) E D [ev] (5) 9.3

120 118 c T [K] n [/m 3 ] (1) T 273 K 373 K N D = n = /m 3 (9.8) (2) T 800 K 900 K ( n = N 0 exp qe ) g 2kT (9.9) ( = N 0 exp qe ) g 1600k ( = N 0 exp qe ) g 1800k ( ( qeg 1 = exp k )) 1600 (9.10) (9.11) (9.12) (3) (9.9) N 0 N 0 = n exp k E g = q ( ) ln = 1.20 ev (9.13) ( ) ( qeg = /m 3 19 ) C 1.20 ev exp 2kT J/K 800 K = /m 3 (9.14) ( N 0 exp qe ) g = N D (9.15) 2kT

121 c qe g T = 2k ln N = 714 K (9.16) 0 N D (4) T 30 K 40 K ( n = N F exp qe ) D 2kT (9.17) (2) (5) (9.17) N F N F = n exp k E D = q ( ) ln = ev = 45 mev (9.18) ( ) ( qed = /m 3 19 ) C 45 mev exp 2kT J/K 30 K = /m 3 (9.19) (3) qe D T = 2k ln N = 57.6 K (9.20) F N D K kg (9.51) τ = µm q = 0.15 m2 /(V s) kg C = s (9.21) 9.5 S L x 196

122 120 c (9.71) G p n t = G n n 0 τ n (9.22) p t = G p p 0 τ p (9.23) (1) n(= n n 0 ) (2) σ (3) V I L (4) Q (5) I L Q g (6) t n (7) t p (8) g τ n τ p t n t p (9) t 0 t > 0 σ(t) 9.5 (1) 0 n t = 0 (2) p (1) G n n 0 = 0 τ n (9.24) n = n n 0 = Gτ n (9.25) p = Gτ p (9.26) σ σ = q ( µ n n + µ p p ) = qg ( µ n τ n + µ p τ p ) (9.27) (3) R R = 1 σ l S (9.28)

123 c I I = V R = σsv l (9.29) I L = σsv l = qg ( µ n τ n + µ p τ p ) V S l (9.30) (4) Sl G (5) q Q = qgsl (9.31) g = I L Q = qg ( ) ( ) µn τ n + µ p τ p V S 1 l qgsl = µn τ n + µ p τ p V l 2 (9.32) (6) v n v n = µ n V l (9.33) t n t n = l = l2 v n µ n V (9.34) (7) (6) t p = l = l2 v p µ p V (9.35) (8) g = ( µn τ n + µ p τ p ) V l 2 = µ nτ n V l 2 + µ pτ p V l 2 = τ n t n + τ p t p (9.36) (9) t > 0 n d( n) dt = d(n n 0) dt = dn dt = n n 0 = n (9.37) τ n τ n t = 0 n = Gτ n ( n = Gτ n exp t ) τ n (9.38)

124 122 c t > 0 p ( p = Gτ p exp t ) τ p σ(t) σ(t) = q ( µ n n + µ p p ) [ ( = qg µ n τ n exp t ) ( + µ p τ p exp t )] τ n τ p (9.39) (9.40) 9.6 (1) K 1 K 2 ( x n(x) = K 1 exp L n 196 (9.73) (2) n(0) = N 0 n(w ) = 0 n(x) ) ) + K 2 exp ( xln + n 0 (9.41) (3) (2) npn [ n(x) N 0 1 x ] W B (9.42) 1 x 1 exp x 1 + x 9.6 (1) [ ( ) ) ] x K 1 exp + K 2 exp ( xln + n 0 = K ( ) 1 x exp K ) 2 exp ( xln x L n L n L n L n (9.43) [ ( ) K1 x exp K )] 2 exp ( xln = K 1 x L n L n L n ( x 2 L exp n L n = 1 L n 2 [ K 1 exp ) + K 2 ( x L n ) 2 ( L exp xln n ) + K 2 exp ( xln )] = 1 L n 2 (n n 0) (9.44)

125 c L n 2 = D n τ n (9.45) D n 2 n x 2 n n 0 τ n = 0 (9.46) (2) n(0) = K 1 + K 2 + n 0 = N 0 (9.47) ( ) ) W n(w ) = K 1 exp + K 2 exp ( WLn + n 0 = 0 (9.48) L n K 1 K 2 ) (N 0 n 0 ) exp ( W + n Ln 0 K 1 = ( ) ) (9.49) exp W exp ( W Ln Ln ( ) (N 0 n 0 ) exp W + n Ln 0 K 2 = ( ) ) (9.50) exp W exp ( W Ln Ln ) (N 0 n 0 ) exp ( W + n ( ) Ln 0 x n(x) = ( ) ) exp exp W exp ( W L n Ln Ln ( ) (N 0 n 0 ) exp W + n ) Ln 0 + ( ) ) exp ( exp W exp ( xln + n 0 W Ln Ln = (N 0 n 0 ) exp [(W x) /L n] exp [(x W /L n ] exp ( ) ( ) W/L n exp W/Ln [1 exp ( ) ( ) ] (9.51) x/l n exp x/ln + n 0 exp ( W/L n ) exp ( W/Ln ) (3) W W B x < W L n ( ) W exp 1 + W ), exp ( WLn 1 W (9.52) L n L n L n ( ) W x exp 1 + W x ( ) x W, exp 1 + x W (9.53) L n L n L n L n

126 124 c n(x) (N 0 n 0 ) = (N 0 n 0 ) 1 + W x L n 1 + W L n 2(W x) L n 2W [ = (N 0 n 0 ) 1 x W L n + n 0 ( ) 1 + x W L n ) + n 0 (1 W Ln [ 1 ] + n 0 [ 1 x W 2x L n 2W L n ] ] = N 0 [ 1 x W ) 1 + x L n (1 x Ln 1 ) 1 + W L n (1 W Ln ] (9.54) 9.1 N D n n T 9.1 1/T log n log n (A) (B) (C) /T (1) (A) (C) (2) (A) (C) (3) (A) (4) (A) exp( qe g/2kt ) E g [ev] q k (A) E g (5) (B) (6) (B) (7) (C)

127 c n p E c E v E F ( n = N c exp E ) c E F kt ( p = N v exp E ) F E v kt (9.55) (9.56) k T N c N v (1) n i E g (2) E Fi (3) N D n E Fn (4) N A p E Fp (5) (3) (4) pn V D N D N A n i 9.3 N D n n p n p N D n = [i] (9.57) p n n i pn = [ii] (9.58) n [iii] (9.59) n n = [iv] (9.60) N D n i 1 n [v] (9.61) N D n i 2 n [vi] (9.62) 1 2

128 126 c pn l x [i] [xiii] pn Q(x) x < 0 N D n x > 0 N A p Q(x) = { [i] ( ln < x < 0) [ii] (0 < x < l p ) (9.63) l n n l p p ϕ(x) q ε d 2 ϕ dx 2 = Q ε { [iii] ( ln < x < 0) [iv] (0 < x < l p) (9.64) (9.64) x E = dϕ dx x = l n x = l p 0 { dϕ [v] ( ln dx = < x < 0) [vi] (0 < x < l p ) (9.65) E x = 0 (9.65) l n l p = [vii] (9.66) (9.65) x x = 0 ϕ = 0 ϕ(x) = { [viii] ( ln < x < 0) [ix] (0 < x < l p ) (9.67) pn V D V D = ϕ( l n) ϕ(l p) = [x] (9.68) (9.66) l n = [xi] (9.69) l p = [xii] (9.70) l l = [xiii] (9.71) V D = kt q ln N AN D n i 2 (9.72)

129 c l w d x V x I x z B z y V y z y x V y - V + B z w d l A I x V x (1) (2) [i] [ix] R H n x v x (< 0) B y F B = [i] y y y V y (< 0) V y E y E y = [ii] F y F B [iii] V y V y = [iv] x J x q(> 0) n v x J x = [v] J x I x J x = [vi] [v] [vi] I x = [vii] [iv] [vii] v x V y = [viii] R H = 1 qn R H = [ix] I x B V y R H n σ q n µ σ = [x] σ R H µ = [xi] µ (3) R H (4) n p

130 128 c (5) σ (6) µ 9.6 [i] [vii] m q(> 0) E v [i] 3 4 τ τ mv E [ii] [iii] v d [iv] n J q, n, v d [v] v d [vi] J = σe σ [vii] 9.7 R H n µ n p µ p q V y 9.2 l w d x V x I x z B z (1) x E x V x l w d (2) y E y V y l w d (3) I x q l w d n p µ n µ p V x (4) R H R H = wv y B z I x (9.73) R H q E x E y B z n p µ n µ p (5) x (6) y q E x E y B z µ n (7) x (8) y q E x E y B z µ n (9) m dv dt = F m τ v (9.74) 3 4

131 c µ τ µ = qτ m (9.75) 6 F v q µ F (10) (6) (8) (9) y v yn v yp (11) 7 (10) y (12) y y 0 (11) E y (13) (4) (12) R H q n p µ n µ p 9.8 (1) [i] [viii] x x x + x p x yz D p p/ x [i] x x + x [ii] [i] [ii] x x + x [iii] E µ p [iv] E [v] p 0 τ p [vi] [vii] (9.76) n [viii] (9.77) (9.76) (9.77) (2) (9.45) (9.51) 7 14 (1.25)

132 130 c (3) p(= p p 0 ) t p t=0 = p 0 p (4) 8 0 (5) p x p x=0 = p 0 p x= = 0 0 p D p τ p = L p 9 (6) (7) V p q k T ( ) qv p = p 0 exp kt (9.78) E V = Ex (6) D p µ p npn V N B /m 3 W B 0.50 µm (1) n B0 (2) V BE n B ( ) qvbe n B0 exp kt (9.79) V n B (3) (4) D Bn m 3 /s (5) (6) 20 µm 30 µm 8 9 L p 10

133 c A K q C ε F/m k J/K h J s c m/s Si N Si /m 3 Si n i /m 3 Si E g 1.12 ev 300 K) Si µ n 0.15 m 2 /(V s) Si µ p m 2 /(V s) Si ε r 11.8 SiO 2 ε ox 3.95

134 132 c 2019 B 1.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) 1.2. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) [1] 4, [2], [3] 5, [4], [5], [6], [7], [8], [9] n, [10] 3, [11], [12] [13] p, [14], [15] (a) (d) (b) (c) 1.7. (b) n (c) p (a) 1.8. (c) (a) (b) 1.9. (i) vµe (ii) nvs (iii) qn (iv) qnvs (v) qnµes (vi) V l (vii) qnµs l (viii) V I (ix) l σs (x) qnµ (1) ρl/s (2) V/l (3) I/S (4) E = ρj (5) Snv (6) qsnv (7) qnv (8) µe (9) ρ = 1/(qµn) µ n = cm 2 /(V s) µ p = cm 2 /(V s) V (1) J (2) 25.9 mev (1) /m 3 (2) (3) S/m (4) Ω m (1) q ( µ n + µ p ) ni (2) 2q µ n µ p n i (3) S/m (4) S/m (1) 12 kv/m (2) 1.9 (3) 1.8 km/s (4) 0.60 km/s (1) m/s (2) 50 V (1) (2) /m 3 (3) /m 3 (4) S/m (5) Ω m

135 1.19. (1) 16 S/m (2) /m 3 c (1) n (2) S/m (3) /m 3 (4) /m (1) m 2 /(V s) (2) 0.31 Ω m (3) 3.2 S/m (4) /m (1) 20 kω (2) 1.85 ks/m (3) 0.46 m 2 /(V s) (4) 23 km/s m 2 /(V s) (1) 0.45 m 2 /(V s) (2) /m 3 (3) 0.05 m 2 /(V s) 2.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) 2.2. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) 2.3. (1) A: K: (2) K (3) (4) (4) 2.3 (a) 2.4. (1) [1] [2] p [3] n [4] [5] [6] [7] (2) (3) C 2.5. (1) 2.7 (a) (2) (3) (4) 2.7 (b) 2.6. (1) p (2) (3) 2.7 (b) (4) (1) p (b) (2) p (3) (4) (5) (6) 2.8. (1) 1.62 (2) (1) V = RI + V D (3) V D = 0.80 V I = 20 ma (1) 24 mw (2) 3.4 pa (3) 1.42 V (1) 25.0 µa (2) V (3) 4.62 V (4) ma (5) ma (6) 18.9 kω (1) 1.47 (2) V (1) A (2) A (3) 17 ma (4) A (5) 0.55 ma (1) V 0 = V R 0 = 2.00 Ω (2) A (3) 4.70 ma V (1) (2) (3) (4) (4) /m 3 (5) /m 3 (6) /m 3 (7) /m (1) J (x) = q D [ ( ) ] p qv ( L p 0 exp 1 exp x ) (2) q D [ ( ) ] p qv kt L L p 0 exp 1 (3) kt

136 134 c 2019 B [1] [2] [3] [4] [5] (1) V V (2) 3.45 µm 49.3 nm (2) C 0 = 45 pf ϕ D = 0.64 V (1) F/m 2 (2) 0.81 V (3) 5.7 pf (4) 1.1 V (5) 0.15 µm (1) 2.34 V (2) /m 3 (3) 0.20 µm (4) m [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] (1) ) (2) (3) R L E (4) V B (5) E (1 + RRL V B R + R L 3.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17) (18) (19) (20) 3.2. (1) (2) α (3) β (4) (5) (6) (7) (8) (9) 3.3. (1) pnp (2) npn (3) (iii) (vi) (4) (ii) (iv) (5) (i) (v) 3.4. (1) (a) n (b) p (c) (d) (e) (f) (g) (h) (i) (j) (2) I E = I B + I C 3.5. (1) 3.7 (a) (2) 3.7 (b) (3) 3.41 (a) 3.7. (1) (2) E (1) (1) (2) 2.0 ma (3) 15 µa (1) 3.9 (2) 300 (3) (4) (5) 1.6 µm (1) (2) (3) 3.0 ma (4) 8.0 µa (1) V CE = V CC R C I C (2) I C = βi B (3) I C = β I B (4) V CE = R C I C (5) V CE = R C β I B (6) R Cβ h ie (1)(a) 5.88 µa (b) 1.18 ma (c) 4.12 V (2)(a) ma (b) 1.00 µa (c) V (3)(a) 1.98 ma (b) 9.90 µa (c) V (1) (2) 3.7 (a) (3) V CE = V CC R C I C (4) V (5) 1.0 ma [ (6) ( 8.0 ) V (7) ] 2.5 mv (8) 0.10 ma (9) 0.20 V (10) 80 [ ] (1) I = I 0 exp qvd kt 1 (2) V = ri + V D (3) V = ri + kt q ln I I (4) r D = r + kt qi (5) r i = r B + kt qi B b (1) v BE = h ie i B +h re v CE (2) i C = h fe i B +h oe v CE (3) r E = h re /h oe, r C = (h fe +1)/h oe,

137 c r B = (h ie h oe h re (h fe + 1))/h oe, α = h fe /(h fe + 1) (4) r B = 475 Ω, r E = 25 Ω, r C = 20 MΩ, α = (1) V (2) 6.00 ma (3) V (4) 5.88 ma (1) v BE = h ie i B (2) i C = h fe i B (3) v CE = R L i C (4) h fer L h ie (1) kt qi B (2) 2.6 kω (1) I C0 V A (2) 30 µs (1) v BE = r π i B (2) i C = g m v BE + v CE [ r o 1 + V CE V A (4) h ie = kt, h re = 0, h fe = β 0 qi B (1) 99 (2) 1.0 MHz (3) 21 (3) h ie = r π, h re = 0, h fe = g m r π, h oe = 1 ] r o, h oe = β 0I B V A (1) T (2) π (3) (4) 5.0 pf (1) 2.0 ma (2) 10 µa (1) 10 ma (1) iii (2) i V CC βr L (1) 3.0 ma (2) 20 µa (3) 0.60 V (4) 0.57 MΩ (1) 1.18 ma (2) 7.65 V (3) 1.73 ma (4) 6.54 V (5) (1)(a) 12.0 µa (b) 2.40 ma (c) 4.79 V (d) 5.39 V (2)(a) V (b) 2.80 ma (c) 5.60 V (d) 6.20 V (3) r π r π g m r π (1) r B + (2) (3) g m v B 1 + j ωc π r π r B + r π + j ωc π r B r E (4) (5) g m r π π 1 + j ωc π r π 1 (6) (7) g m C π r π C π 4.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17) (18) (19) (20) (21) (22) (23) 4.2. (1) (Field Effect Transistor) (2) (3) (4) (5) (6) 4.3. (5) 4.4. (A) (B) (C) (D) (E) (F) (G) (H) (I) (J) 4.5. (1) (2) (3) (4) (5) (6) (7) 4.6. (1) (2) 4.4 (b) (3) (4) 4.5 (c) (5) (6) 4.5 (d) (7) 4.7. (1-i) GV DS, (1-ii) σw t L, (1-iii) qµn, (1-iv) qnt, (1-v) µq t, (1-vi) µqw L, (1-vii)

138 136 c 2019 B ( µw Q L V DS, (1-viii) C ox V G V th V ) ( DS, (1-ix) µw C ox 2 L V G V th V ) DS V DS, 2 (1-x) V G V th (2) (3) (4) µw C ox (5) (6) L 4.8. (1) c, h, k (2) b, g, i (3) d, e, j (4) a, f, l 4.9. (1) (2) (3) V DS = V G V th (1) (2) n (3) 4.5 (c) (4) 4.5 (d) (5) 4.4 (b) (1) i. ii. iii. (2) (3) (4) (5) (6) (7) (1) n (2) (3) 1.0 V (4) 2.0 ma (5) 2.0 V (6) 3.0 V (7) 1.0 ms/v (8) 1.5 ma (1) (2) 1.5 V (3) 1.5 V (4) 8.9 ma (1) (2) 4.0 V (3) 30 ma (4) 40 ma (5) 42 ma (6) 20 ms (1) (2) (3) 1.0 V (4) 1.0 V (5) 16 ms/v (6) 4.5 ma (7) 2.22 V (1) (2) F/m 2 (3) 2.0 V (4) 0.26 ma (5) 0.35 ma (6) 4.0 V (7) 1.3 ma (8) 1.4 ma (1) 0.50 V (2) 2.0 ms/v (3) I D 9.0 ma (1) n (2) (3) 1.0 V (1) 0.25 V (2) S/V (3) 1.2 ms (4) 2.50 V (5) 2.5 ma (1) 0.50 V (2) 40.0 ms/v (3) 1.20 (4) 45.0 (5) 60.0 ma (6) 80.0 ma (1) (2) (3) βv DS (4) β(v G V th V DS ) (5) (6) (7) V P = V G V th (8) (9) (10) βv P 2 2I Dsat (11) β(v G V th ) (12) (13) 0 V G V th (1) V DS = V DD R L I D (2) V DD R Lβ 2 (V G0 V th ) 2 (3) R L β (V G0 V th ) V G (1) 70 ms (2) 50 µs (1) β (V G V th ) 2 λ I D λ (2) 2 (1 + λv DS ) (1) V DS = V DD R L I D (2) 40 ms/v (3) 24 ma (4) 15.0 V (5) 12.0 V (6) (1) (2) 1.0 kω (3) 0.40 V (4) 5.0 ms/v (5) 11.6 V (1) βv DS (2) β (V DD V th ) (3) I D = β (V DD V th ) V DS (4) V DS = V DD R D I D (5) V DD βr D (V DD V th ) (1) V DS = V DD R D I D (2) (4.33) (3) 31 mv (4) 0.61 ma (5) 31 mv (1) V th (2) V DD R Lβ 2 (V G V th ) 2 (3) V th R L βv DD R L β (4) [ 1 1 ] 2R L βv DD [R L β(v G V th )+1] 2 2 [ V G V th + 1 R L β ]

139 c (1) (JFET) (3) A (4) (5) 4.25 (a) (6) (1) (2) (3) (4) (5) (1) (2) (3) qϕ M qϕ S (4) qϕ M > qϕ S (5) (1) (2) a (3) 4.29 (b) (1) (2) (3) (4) (5) 4.29 (b) (6) (1) MOSFET-(b), JFET-(a), MESFET-(c) (2) MESFET (3) (4) A:pn, B: -, C:, D:, E:, F:, G:, H:, I:, J: (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) 5.2. (1) iii (2) ii (3) i 5.3. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) 5.4. (1) p-si (2) SiO 2 (3) n-si (4) Si 3 N 4 (5) SiO 2 (6) Si (7) n-si (8) SiO (a) (b) (c) (d) (e) (f) CVD 5.6. (1) pn (2) (3) (4) (5) 5.7. (1) i, ii, iii (2) n + (3) (4) (5) (6) pn iii, 2 vi, 3 iv, 4 ii, 5 v, 6 i, 7 viii, 8 ix, 9 vii pf Ω vii, 2 vi, 3 iv, 4 i, 5 viii, 6 v, 7 iii, 8 ii n MOSFET p MOSFET (1) i (2) (3) MOS vii, 2 v, 3 vi, 4 i, 5 iv, 6 iv, 7 iii CVD

140 138 c 2019 B 6.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17) 6.2. (1) (2) (3) (4) 6.3. (1) (2) (3) (4) 6.4. (1) p (2) 7 D ( ) ) ( ) ) 8 F 9 G 10 H (3) I = I ph I 0 (exp qv kt 1 (4) I = I sh I 0 (exp qv kt nm 6.6. (1) c = λν (2) E p = hν (3) E p = hc λ (4) λ max = hc qe g 6.7. (1) Hz (2) J (3) ev 6.8. (1) 6.3 (2) A (3) B (1) hc λ (2) P λ hc (3) hc (4) qp λ (5) P qe g hc E g (1) J (2) /s (3) /s (4) 7.2 ma p 6.8[ ( ) ] qv (1) (2) (3) I = I sh I 0 exp 1 (4) qi 0 (5) kt kt (1) 10 pa (2) 0.52 V (3) 26 Ω (1) 20 ma (2) I 0 [exp 8.9 pa (5) 22 ma (1) (2) V ( qvop kt ) ] (1) V (2) 500 ma (3) 201 mw (4) (3) I = I 0 [exp ( qvop kt ) ( )] qv exp kt (1) 4.5 (d) (2) d (3) (4) (5) X A, Y C, Z B ] nm ev (A) (B) (C) (D) (E) (F) (G) (H) (I) (J) (1) (2) (A) (B) (C) (D) 7.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) 7.2. (1) (2) (3) (4) (5) (6) (7) (8) (4)

141 c B, 2 E, 3 A, 4 G, 5 G, 6 D, 7 H, 8 F 7.5. (1) CMOS 6 (2) SRAM (3) (4) (5) Q 2 Q 3 Q 4 (6) B 0 C V DD (1) a: b: (2) (3) V = C SV S + CV DD /2, V = ( C S + C C S VS V DD /2 ) (4) 1.8 V (5) 0.10 V (6) (7) 2.24 V (8) a: C S + C b: c: (9) 7.8. (1) 10 ms (2) R D V B1 =, V B2 = V DD R D + R L FET (1) A B (2) C D E F G H I J (3) EPROM (1) V G = V U + V D (2) Q U = C U V U (3) Q D = C D V D (4) Q F = Q U + Q D (5) Q I = Q D (6) Q I = C D (C U V G + Q F ) / (C U + C D ) (7) Q F /C U (8) 1.3 fc (9) m (A) (B) (C) (D) (E) (F) (1) (2) (3) (4) 7.21 (5) Si 3 N 4 /SiO f 2 l 3 m 4 i 5 d 6 g 7 b 8 k (1) A: B: C: (2) B (3) (4) 1.0 ev (5) (6) N D (7) 9.2. (1) n i = ( N c N v exp E ) g (2) E Fi = E c + E v 2kT 2 kt ln N D N c (4) E Fp = E v kt ln N A N v (5) V D = kt q ln N DN A n i 2 + kt 2 ln N v N c (3) E Fn = E c +

142 140 c 2019 B 9.3. [i] p + N D [ii] n 2 i [iii] n 2 N D n n 2 i = 0 [iv] N D + N 2 D + 4n 2 i [v] N D [vi] n i [i] qn D [ii] qn A [iii] qn D qn A [iv] [v] qn D qn A ( ) (x + l n ) [vi] x lp ε ε ε ε [vii] N A [viii] qn D ( x 2 + 2l n x ) [ix] qn A ( x 2 2l p x ) q ( [x] ND l 2 2 n + N A l ) p [xi] N D 2ε 2ε 2ε ( ) 2εNA V D qn D (N A + N D ) [xii] 2εND V D qn A (N A + N D ) [xiii] 2εVD NA ND + q(n A + N D ) N D 9.5. (1) (2) [i] qvb [ii] V y w N A [iii] qv yw = qvb [iv]wbv x [v] qnv x [vi] [vii] qnwdv x [viii] I xb qnd [ix] dv y BI x [x] qnµ [xi] R H σ (3) (4) V y R H n p (5) σ = µ = lv y wbv x 9.6. [i] m dv dt [vi] J = q2 nτ 9.7. (1) V x l mv = qe [ii] qe τ m E [vii] σ = q2 nτ m (2) V y d (3) q ( nµn + pµ p ) wdvx l I x wd li x wdv x (6) [iii] m dv dt = qe m τ v [iv] v d = qτe m [v] J = qnv d (4) E y q ( nµ n + pµ p ) Ex B z (5) µ n E x (6) q ( E y + µ n E x B z ) (7) µp E x (8) q ( E y µ p E x B z ) (9) µf q (10) v yn = µ n ( Ey + µ n E x B z ), vyp = µ p ( Ey µ p E x B z ) (11) pµ p ( Ey µ p E x B z ) nµn ( Ey + µ n E x B z ) (12) E x B z ( pµp 2 nµ n 2 ) (13) pµ p 2 nµ n 2 q ( pµ p + nµ n ) 2 p(x) 9.8. (1) [i] D p x [vii] p p p 0 τ p p(x + x) [ii] D p x t = D 2 p p x 2 µ pe p x p p 0 2 p(x) [iii] D p x 2 [viii] n τ p pµ p + nµ n [iv] µ p pe [v] µ p E p x [vi] t = D 2 n n x 2 + µ ne n x n n 0 (2) p t = p p 0 2 p (3) p 0 exp( t/τ p ) (4) D p τ p p x 2 p p 0 = 0 (5) p 0 exp( x/l p ) τ p 2 p (6) D p x 2 µ pe p x = 0 (7) D q p kt = µ p 9.9. (1) m 3 (2) /m 3 (3) /m 4 (4) /(m 2 s) (5) A/m 2 (6) 0.19 ma τ n