R1LV1616H-I シリーズ

Transcription

1 お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ ( 年 4 月 1 日ルネサスエレクトロニクス株式会社 発行 ルネサスエレクトロニクス株式会社 ( 問い合わせ先

2 OA AV RoHS

3 Wide Temperature Range Version 16M SRAM (1-Mword 16-bit / 2-Mword 8-bit) RJJ03C Rev M 16 2-M 8 16M RAM CMOS 6 48 TSOPI 3.0V 2.7V 3.6V 45/55ns max 9mW/MHz typ 1.5µW typ 2 CS C BYTE# A-1 Byte 8 Rev.1.01, , page 1 of 19

4 Type No. Access time Package R1LV1616HSA-4LI 45 ns 48-pin plastic TSOPI (48P3R-B) R1LV1616HSA-4SI 45 ns R1LV1616HSA-5SI 55 ns Rev.1.01, , page 2 of 19

5 Rev.1.01, , page 3 of A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# CS2 NU UB# LB# A18 A17 A7 A6 A5 A4 A3 A2 A1 A16 BYTE# V I/O15/A-1 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 V I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE# V CS1# A0 CC SS SS (Top view) 48-pin TSOP

6 A0 to A19 Pin name (TSOP) Address input (word mode) A-1 to A19 Address input (byte mode) I/O0 to I/O15 Data input/output CS1# (CS1) Chip select 1 CS2 Chip select 2 WE# (WE) OE# (OE) LB# (LB) UB# (UB) BYTE# (BYTE) V CC V SS NC NU* 1 Write enable Output enable Lower byte select Upper byte select Byte enable Power supply Ground No connection Not used (test mode pin) Function 1. Rev.1.01, , page 4 of 19

7 (TSOP) LSB MSB A15 A14 A13 A12 A11 A10 A9 A8 A18 A16 A19 A4 A5 Row decoder Memory matrix 8,192 x 128 x 16 8,192 x 256 x 8 V CC V SS I/O0 Column I/O Input data control Column decoder I/O15 MSBA17A7A6 A3 A2 A1A0 A-1 LSB BYTE# CS2 CS1# LB# UB# WE# Control logic OE# Rev.1.01, , page 5 of 19

8 (TSOP) Byte mode CS1# CS2 WE# OE# UB# LB# BYTE# I/O0 to I/O7 I/O8 to I/O14 I/O15 Operation H L High-Z High-Z High-Z Standby L L High-Z High-Z High-Z Standby L H H L L Dout High-Z A-1 Read L H L L Din High-Z A-1 Write L H H H L High-Z High-Z High-Z Output disable H: V IH, L: V IL, : V IH or V IL Word mode CS1# CS2 WE# OE# UB# LB# BYTE# I/O0 to I/O7 I/O8 to I/O14 I/O15 Operation H H High-Z High-Z High-Z Standby L H High-Z High-Z High-Z Standby H H H High-Z High-Z High-Z Standby L H H L L L H Dout Dout Dout Read L H H L H L H Dout High-Z High-Z Lower byte read L H H L L H H High-Z Dout Dout Upper byte read L H L L L H Din Din Din Write L H L H L H Din High-Z High-Z Lower byte write L H L L H H High-Z Din Din Upper byte write L H H H H High-Z High-Z High-Z Output disable H: V IH, L: V IL, : V IH or V IL Rev.1.01, , page 6 of 19

9 Parameter Symbol Value Unit Power supply voltage relative to V SS V CC 0.5 to +4.6 V Terminal voltage on any pin relative to V SS V T 0.5* 1 to V CC + 0.3* 2 V Power dissipation P T 1.0 W Storage temperature range Tstg 55 to +125 C Storage temperature range under bias Tbias 40 to +85 C 1. 10ns 2.0V(Min) V DC Parameter Symbol Min Typ Max Unit Note Supply voltage V CC V V SS V Input high voltage V IH 2.2 V CC V Input low voltage V IL V 1 Ambient temperature range Ta C 1. 10ns 2.0V(Min) Rev.1.01, , page 7 of 19

10 DC Parameter Symbol Min Typ Max Unit Test conditions* 2 Input leakage current I LI 1 µa Vin = V SS to V CC Output leakage current I LO 1 µa CS1# = V IH or CS2 = V IL or OE# = V IH or WE# = V IL or LB# = UB# = V IH, V I/O = V SS to V CC Operating current I CC 20 ma CS1# = V IL, CS2 = V IH, Others = V IH / V IL, I I/O = 0 ma Average operating current I CC1 (READ) 22* 1 35 ma Min. cycle, duty = 100%, I I/O = 0 ma, CS1# = V IL, CS2 = V IH, WE# = V IH, Others = V IH /V IL I CC1 30* 1 50 ma Min. cycle, duty = 100%, I I/O = 0 ma, CS1# = V IL, CS2 = V IH, Others = V IH /V IL I CC2 * 3 (READ) 3* 1 8 ma Cycle time = 70 ns, duty = 100%, I I/O = 0 ma, CS1# = V IL, CS2 = V IH, WE# = V IH, Others = V IH /V IL Address increment scan or decrement scan I CC2 * 3 20* 1 30 ma Cycle time = 70 ns, duty = 100%, I I/O = 0 ma, CS1# = V IL, CS2 = V IH, Others = V IH /V IL Address increment scan or decrement scan I CC3 3* 1 8 ma Cycle time = 1 µs, duty = 100%, I I/O = 0 ma, CS1# 0.2 V, CS2 V CC 0.2 V V IH V CC 0.2 V, V IL 0.2 V Standby current I SB 0.1* ma CS2 = V IL Standby current -4SI I SB1 0.5* 1 8 µa 0 V Vin -5SI -4LI I SB1 0.5* 1 25 µa (1) 0 V CS2 0.2 V or (2) CS1# V CC 0.2 V, CS2 V CC 0.2 V or (3) LB# = UB# V CC 0.2 V, CS2 V CC 0.2 V, CS1# 0.2 V Average value Output high voltage V OH 2.4 V I OH = 1 ma V OH V CC 0.2 V I OH = 100 µa Output low voltage V OL 0.4 V I OL = 2 ma V OL 0.2 V I OL = 100 µa Rev.1.01, , page 8 of 19

11 1. Typ V CC = 3.0V Ta = +25 C 2. BYTE# V CC 0.2 V or BYTE# 0.2 V 3. increment decrement Word mode: LSB (least singnificant bit) A0 Byte mode: LSB (least singnificant bit) A-1 Ta = +25 C f = 1MHz Parameter Symbol Min Typ Max Unit Test conditions Note Input capacitance Cin 8 pf Vin = 0 V 1 Input/output capacitance C I/O 10 pf V I/O = 0 V 1 1. Rev.1.01, , page 9 of 19

12 AC V CC = 2.7V 3.6V Ta = C V IL = 0.4V, V IH = 2.4V 5ns 1.4V 1.4 V Dout RL=500 Ω 50pF Rev.1.01, , page 10 of 19

13 R1LV1616H-I -4SI, -4LI -5SI Parameter Symbol Min Max Min Max Unit Notes Read cycle time t RC ns Address access time t AA ns Chip select access time t ACS ns t ACS ns Output enable to output valid t OE ns Output hold from address change t OH ns LB#, UB# access time t BA ns Chip select to output in low-z t CLZ ns 2, 3 t CLZ ns 2, 3 LB#, UB# enable to low-z t BLZ 5 5 ns 2, 3 Output enable to output in low-z t OLZ 5 5 ns 2, 3 Chip deselect to output in high-z t CHZ ns 1, 2, 3 t CHZ ns 1, 2, 3 LB#, UB# disable to high-z t BHZ ns 1, 2, 3 Output disable to output in high-z t OHZ ns 1, 2, 3 Rev.1.01, , page 11 of 19

14 R1LV1616H-I -4SI, -4LI -5SI Parameter Symbol Min Max Min Max Unit Notes Write cycle time t WC ns Address valid to end of write t AW ns Chip selection to end of write t CW ns 5 Write pulse width t WP ns 4 LB#, UB# valid to end of write t BW ns Address setup time t AS 0 0 ns 6 Write recovery time t WR 0 0 ns 7 Data to write time overlap t DW ns Data hold from write time t DH 0 0 ns Output active from end of write t OW 5 5 ns 2 Output disable to output in high-z t OHZ ns 1, 2 Write to output in high-z t WHZ ns 1, 2-4SI, -4LI R1LV1616H-I Parameter Symbol Min Max Min Max Unit Notes BYTE# setup time t BS 5 5 ms BYTE# recovery time t BR 5 5 ms 1. t CHZ t OHZ t WHZ t BHZ t HZ max t LZ min 4. CS1# Low CS2 High WE# Low LB# UB# Low t WP CS1# Low CS2 High WE# Low LB# UB# Low CS1# High CS2 Low WE# High LB# UB# High t WP 5. t CW CS1# Low CS2 High 6. t AS 7. t WR WE# CS1# High CS2 Low -5SI Rev.1.01, , page 12 of 19

15 * 1 t RC Address* 2 Valid address t AA CS1# tacs1 t CLZ1 t CHZ1 CS2 t ACS2 t CLZ2 t CHZ2 t BHZ LB#, UB# t BA t BLZ t OHZ OE# t OE t OLZ t OH Dout* 3 High impedance Valid data Notes: 1. BYTE# > V CC 0.2 V or BYTE# < 0.2 V 2. Word mode: A0 to A19 Byte mode: A-1 to A19 3. Word mode: I/O0 to I/O15 Byte mode: I/O0 to I/O7 Rev.1.01, , page 13 of 19

16 (1) * 1 (WE# Clock) t WC Address* 2 Valid address t CW t WR CS1# t CW CS2 t BW LB#, UB# t AW WE# t AS t WP t DW t DH Din* 3 Dout* 3 t WHZ Valid data High impedance t OW Notes: 1. BYTE# > V CC 0.2 V or BYTE# < 0.2 V 2. Word mode: A0 to A19 Byte mode: A-1 to A19 3. Word mode: I/O0 to I/O15 Byte mode: I/O0 to I/O7 Rev.1.01, , page 14 of 19

17 (2) * 1 (CS1#, CS2 Clock, OE# = V IH ) t WC Address* 2 Valid address t AW t AS t CW t WR CS1# t AS t CW CS2 t BW LB#, UB# WE# t WP t DW t DH Din* 3 Valid data Dout* 3 High impedance Notes: 1. BYTE# > V CC 0.2 V or BYTE# < 0.2 V 2. Word mode: A0 to A19 Byte mode: A-1 to A19 3. Word mode: I/O0 to I/O15 Byte mode: I/O0 to I/O7 Rev.1.01, , page 15 of 19

18 (3) * 1 (LB#, UB# Clock, OE# = V IH ) t WC Address Valid address t AW t CW t WR CS1# t CW CS2 t AS t BW UB# (LB#) t BW LB# (UB#) WE# t WP t DW t DH Din-UB (Din-LB) Valid data t DW t DH Din-LB (Din-UB) Dout High impedance Valid data Note: 1. BYTE# > V CC 0.2 V Rev.1.01, , page 16 of 19

19 (TSOP) CS2 CS1# t BS t BR BYTE# Rev.1.01, , page 17 of 19

20 Ta = C Parameter Symbol Min Typ Max Unit Test conditions* 2, 3 V CC for data retention V DR V Vin 0 V (1) 0 V CS2 0.2 V or (2) CS2 V CC 0.2 V, CS1# V CC 0.2 V or (3) LB# = UB# V CC 0.2 V, CS2 V CC 0.2 V, CS1# 0.2 V Data retention current Chip deselect to data retention time -4SI -5SI I CCDR 0.5* 1 8 µa -4LI I CCDR 0.5* 1 25 µa V CC = 3.0 V, Vin 0 V (1) 0 V CS2 0.2 V or (2) CS2 V CC 0.2 V, CS1# V CC 0.2 V or (3) LB# = UB# V CC 0.2 V, CS2 V CC 0.2 V, CS1# 0.2 V Average value t CDR 0 ns See retention waveforms Operation recovery time t R 5 ms 1. Typ V CC = 3.0 V Ta = +25 C 2. BYTE# V CC 0.2 V or BYTE# 0.2 V 3. CS2 WE# CS1# OE# LB# UB# Din CS2 Vin WE# CS1# OE# LB# UB# I/O High-Z CS1# CS2 CS2 V CC 0.2 V 0 V CS2 0.2 V WE# OE# LB# UB# I/O High-Z Rev.1.01, , page 18 of 19

21 (1) (CS1# Controlled) V CC 2.7 V t CDR Data retention mode t R 2.2 V V DR CS1# 0 V CS1# V CC 0.2 V (2) (CS2 Controlled) V CC 2.7 V CS2 tcdr Data retention mode t R V DR 0.6 V 0 V 0 V < CS2 < 0.2 V (3) (LB#, UB# Controlled) V CC 2.7 V t CDR Data retention mode t R 2.2 V V DR LB#, UB# 0 V LB#, UB# V CC 0.2 V Rev.1.01, , page 19 of 19

22 Rev M 8

23 ( ( ) (03) ( ) (044) ( 2F) (042) ( 5F) (011) ( 13F) (022) ( 3F) (0246) ( 1F) (029) ( 3F) (025) ( 7F) (0263) ( 4F) (052) F (053) ( ) (06) ( 8F) (076) ( 8F) (082) ( ) (0857) ( 5F) (092) ( ) (099) [email protected] Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 3.0