ELECTRONIC IMAGING IN ASTRONOMY Detectors and Instrumentation 5 Instrumentation and detectors
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1 ELECTRONIC IMAGING IN ASTRONOMY Detectors and Instrumentation 5 Instrumentation and detectors /5/10
2 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 2 / 35
3 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 3 / 35
4 5.4.1 FTS Michelson ( ) x = 2(x b x a ) k x = 2π λ x ( ) output ( ) k T (k, x) = 1 2 [1 + cos(k x)](?) Fig 1: Mclean ( 4 ) Mclean 2017/5/10 4 / 35
5 5.4.1 T (k, x) E(t) = E 0 exp (iωt), E(t) 2 = E 0 2 Beam Splitter A,B E A + E B E A + E B = 1 2 E 0 exp (iωt) E 0 exp (iωt + ik x) = 1 2 E 0 exp (iωt)(1 + exp (ik x)) E A + E B 2 = 1 4 E 0 2 (2 + exp (ik x) + exp ( ik x)) = 1 2 E 0 2 (1 + cos(k x)) ( 4 ) Mclean 2017/5/10 5 / 35
6 5.4.1 FTS I(k) F ( x) = c 0 I(k)T (k, x)dk = const. + c 2 F ( x): Interferogram I(k) I(k) = 2 π 0 F ( x) cos(k x)d x 0 I(k) cos(k x)dk FTS R = 4 x max /λ Ex. x max = 10 cm, λ = 1 µm R = 400, 000 S/N FTS ( 4 ) Mclean 2017/5/10 6 / 35
7 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 7 / 35
8 5.4.2 : plane parallel plates d( l) n(= 1) θ( 1)( θ) mλ = 2nd cos θ (θ ) Fig 2: ( 4 ) Mclean 2017/5/10 8 / 35
9 5.4.2 narrow band prefilter Angular diameter: δβ = 8/R Free spectral range: λ FSP = λ m = λ2 2nd (cos θ 1?) Fig 3: Mclean ( 4 ) Mclean 2017/5/10 9 / 35
10 5.4.2 : R = λ δλ = λ λ FSP λ FSP δλ = 2F nd λ : F = λ FSP δλ plate F = π r/(1 r) Transmitted intensity: δ = 2π λ 2nd cos θ I(δ) I(0) = (2F/π) 2 sin 2 (δ/2) ( 4 ) Mclean 2017/5/10 10 / 35
11 5.4.2 Fig 4: ( 4 ) Mclean 2017/5/10 11 / 35
12 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 12 / 35
13 5.4.3 Fabry-Perot etalon mλ = 2nd cos θ Fabry-Perot etalon 1/2 blocking layer Fig 5: Mclean ( 4 ) Mclean 2017/5/10 13 / 35
14 5.4.3 ( ) 1/4 3-5 Fig 6: https: // category/opt_d/opt_d03.html ( 4 ) Mclean 2017/5/10 14 / 35
15 5.4.3 λ = λ 0 1 ( n0 n e ) 2 sin 2 φ n 0 : ( 1) n e : spacer φ : external angle (blue shift) Fig 7: https: // category/opt_d/opt_d03.html ( 4 ) Mclean 2017/5/10 15 / 35
16 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 16 / 35
17 Photon detectors ( ) Thermal detectors ( ) Coherent detectors ( 4 ) Mclean 2017/5/10 17 / 35
18 5.5.1 Photon or Thermal Photon detectors Thermal detectors Thermal detector spectral distribution (P ) Photon detector (N = P/hν) (N/P = λ/hc) ( 4 ) Mclean 2017/5/10 18 / 35
19 5.5.1 Photon detectors Photoemission device: charge carrier (electron) (external photoelectric effect) PMT photocathode UV imaging down conversion low energy photons (fluoresce) Photoabsorption device: charge carrier (internal photoelectric effect) Photoconductor effect free charge carrier Photovoltaic (Photodiode) effect carrier ( 4 ) Mclean 2017/5/10 19 / 35
20 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 20 / 35
21 5.5.2 valence band: conduction band: : forbidden energy gap (E G ) Fig 8: Mclean ( 4 ) Mclean 2017/5/10 21 / 35
22 5.5.2 ( )/ ( ) valence band conduction band ( ) E G conduction band valence band ( 4 ) Mclean 2017/5/10 22 / 35
23 5.5.2 valence band conduction band E th (ev) = kt = 0.026(T/300) ev valence band hole ( electron-hole pairs) E G 1eV 0eV 3.5eV 1eV eV(550nm) exp ( E G /2kT ) E G ( 4 ) Mclean 2017/5/10 23 / 35
24 5.5.2 ( ) Table 5.1 IV III-V (GaAs, InSb) II-VI (HgCdTe) Table 5.2 valence band conduction band ( ) λ c = hc 1.24 µm ev = E G E G ( 4 ) Mclean 2017/5/10 24 / 35
25 5.5.2 forbidden gap n-type conduction band p-type valence band Table 5.3 Fig 9: Mclean ( 4 ) Mclean 2017/5/10 25 / 35
26 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 26 / 35
27 5.5.3 Photoconductor electron-hole pair electron hole electron Fig 10: Mclean P [W] I = eηp hν vτ l η : τ : mean carrier lifetime ( a few milliseconds) v: charged carrier (v = µe = µv/l)(µ: carrier ) ( 4 ) Mclean 2017/5/10 27 / 35
28 5.5.3 Photoconductor transit time: l/v mean carrier lifetime transit time : G = vτ/l : S = I/P or V/RP S = eηg hc : 4eGIB (B: electrical bandwidth) ( 4 ) Mclean 2017/5/10 28 / 35
29 5.5.3 Photodiode p-n electron hole (depletion region) n-type n-type p-type (E F )( 1/2 ) E F n-type conduction band p-type valence band ( 4 ) Mclean 2017/5/10 29 / 35
30 5.5.3 Photodiode Fig 11: Mclean junction region (X 1 + X 2 ) V 0 p (forward bias) p depletion region (reversed bias) ( 4 ) Mclean 2017/5/10 30 / 35
31 5.5.3 Photodiode depletion region electron-hole pair P [W] I = eηp hν noise = 2eIB photoconductor G = 1 1/ 2 depletion region ( 4 ) Mclean 2017/5/10 31 / 35
32 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 32 / 35
33 5.5.4 Bolometer Thermometer (QE(η) 100%) Absorber( C [J/K]) Thermometer Absorber heat sink G [W/K] P [W] E = ηp t ( hν...??) T = T T 0 = E/C T = T 0 + (P + P bias )/G bolometer ( 4 ) Mclean 2017/5/10 33 / 35
34 Contents 5.4 Interferometers The Fourier Transform Spectrometer (FTS) The Fabry-Perot etalon Interference filters 5.5 Detectors Classification Semiconductors Photoconductors and photodiodes Thermal detectors Coherent detectors ( 4 ) Mclean 2017/5/10 34 / 35
35 5.5.5 Heterodyne Local Oscillator 1GHz : cryogenic transistor pre-amplifier 1GHz 40GHz: FET, parametric, and maser amplifier 40GHz : ( ) ν IF = ν S ν LO mixer diode: I-V I = V 2 I P SIS mixer: superconductor ( 4 ) Mclean 2017/5/10 35 / 35
(interferometer) 1 N *3 2 ω λ k = ω/c = 2π/λ ( ) r E = A 1 e iφ1(r) e iωt + A 2 e iφ2(r) e iωt (1) φ 1 (r), φ 2 (r) r λ 2π 2 I = E 2 = A A 2 2 +
7 1 (Young) *1 *2 (interference) *1 (1802 1804) *2 2 (2005) (1993) 1 (interferometer) 1 N *3 2 ω λ k = ω/c = 2π/λ ( ) r E = A 1 e iφ1(r) e iωt + A 2 e iφ2(r) e iωt (1) φ 1 (r), φ 2 (r) r λ 2π 2 I = E 2
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2.6 2.6.1 mẍ + γẋ + ω 0 x) = ee 2.118) e iωt Pω) = χω)e = ex = e2 Eω) m ω0 2 ω2 iωγ 2.119) Z N ϵω) ϵ 0 = 1 + Ne2 m j f j ω 2 j ω2 iωγ j 2.120) Z ω ω j γ j f j f j f j sum j f j = Z 2.120 ω ω j, γ ϵω) ϵ
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2.6 2.6.1 ω 0 m(ẍ + γẋ + ω0x) 2 = ee (2.118) e iωt x = e 1 m ω0 2 E(ω). (2.119) ω2 iωγ Z N P(ω) = χ(ω)e = exzn (2.120) ϵ = ϵ 0 (1 + χ) ϵ(ω) ϵ 0 = 1 + Ne2 m j f j ω 2 j ω2 iωγ j (2.121) Z ω ω j γ j f j
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