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1 OHO2006
2
3 Accelerator Laboratory 10 MW Multi-Beam Klystron Specifications Operating Frequency 1.3 GHz RF Pulse Width 1.5 ms Peak Output Power 10 MW Number of Beams 6 Beam Voltage 120 kv Beam Current 140 A Micro-Perveance 3.4 Repetition Rate 5 pps Efficiency 60 % Toshiba MBK
4 Accelerator Laboratory 2
5 Accelerator Laboratory MA/22
6 10kV 1.7kA -120kV 140A 1.7 ms 5Hz
7 Switch V k =120kV C R=120kV/140A =857 τ D r V = V 0 e t CR C = τ R D r E = 1 2 CV 2 k τ=1.7ms Dr=1% R=857 2 C=198µF 1kW E=1.4MJ 24 Dr=20% C, E 1/20 1/20 C=9.9µF (2 ) C=1426µF(1 )
8 C FNAL Quentine Kerns SCR( C L 20% 1% 1kV,
9 10kV 1.7kA GTO(Gate turn-off thyristor ) IGBT(Insulated Gate Bipolar Transistor) IGCT(Integrated Gate Commutated Thyristor)
10 No-Healing W v = 1 2 ε rε 0 E 2 W (J) v (m 3 ) ε r ε (8.85x10-12 F/m) E (V/m) Self-Healing(SH) ~7µm ~100V/µm ~200V/µm
11 Self-Healing Type Capacitor Test Capacitor Breakdown Capacitor Element Down-sizing of capacitor Case volume V of capacitor: V = 2W ηεe 2 W : stored energy ε : dielectric constant η : packing factor E : field strength( ~ 60 V/µm for no-healing capacitor) Cross section of dielectric/electrode Configulation(not to scale) Electric field strength(v/µm) Accelerated Life Test Electric field strength vs Lifetime Lifetime(Shots) SH NH Ref(n=20.8) L V n = L 0 V 0 Capacitor Volume 1/4 ATF Modulator 50pps X 7,000H X 8 Years
12 NH SH 133kJ/m 3
13 (A) (t r ) L l () N p 120kV A A = V s τ N s B N s 1.7ms ~2T(dc t r = 2.2 L l R L l = 1 2 µ H 2 2 dv N s L l = t r R 2.2 = 100µs 857Ω 2.2 R=120kV/140A =857 = 39mH
14 STF#1 Primary voltage 21.7 kv Primary current 588 A Primary impedance 36.8 Secondary voltage 130 kv Secondary current 98 kv Secondary impedance 1327 Flat-top pulse width 1.5 ms Rise-time(10-90%) 40µs Pulse droop < 3% Step-up ratio 1:6 Pulse repetition rate 5pps Design Feature DCbias Auto winding Heater transformer is isolation transformer type. Cores 25 Cores used for JHF pulse transformer were reused in total number of 39 cores for cost saving. Material is 0.22mm thick silicon steal ribbon. 4.4 tons in weight
15 1255mm (2 Primary inductance : 60 H Leakage inductance : 20 mh Distributed capacitance : 570 pf 167T L l =28 mh@abb 65T 65T 1 65T 158T 1710mm 660mm 4.8t 1.84t 2.5t 9.14t
16 ABB (2 ):28mH 2590(W)x1200(D)x1340(H)mm
17 V S = E R L C L C 2R sin ωt p 2 sin ωt p 2 cos( ωt b ) cos ωt b + ωt p 2
18
19 LC Z = L C T = 2π L C LC L = T 2 1 π Z C = T 2 Z π T/2> Z~ 5%. STF#1 T/2=2.2ms, Z=1.7 L=412µH, C=1190µF C=1200µF L=420µH
20 Peak Output Power 11.4 MW Secondary Output Voltage 130 kv Secondary Output Current 98 A Pulse width 1.7 ms Flat-top width > 1.5 ms Rise time(10-90%) < 0.1ms Flatness 0.5% Repetition Rate 5 pps Pulse Transformer Ratio 1:6 Capacitor Bank 282 µf LC Bouncer Inductance 1.2 mh Capacitance 0.42 mf Series Switch Voltage 21.7 kv Current 588 A TH2104A 5MW Klystron
21 ~100m High-Voltage Coaxial Cable IGBT Switch Klystron TH kV Use existing components possible 0.42mF 1.2mH Add 150µF capacitor Install a bouncer circuit Change to new pulse transformer for long pulse operation Bouncer Circuit 1:6 Heater Transformer
22 Capacitor Bank and Crowbar unit VCB SCR unit DC Power Supply(Tent House)
23 Bouncer Circuit Klystron TH2104 IGBT Switch unit Pulse Transformer STF Klystron Gallery
24 IGBT Switch Use 36 IGBTs in series Trigger: Optical fiber cable IGBT Driver Board IGBT Mitsubishi CM600H-24H Rated Voltage : 1200V Rated Current : 600A Switch unit
25 Clipper Diode SCR Inductor Capacitor Bouncer unit Inside of Bouncer Circuit
26 Klystron Currrent(A) Klystron Current(A) Time(ms) Es=17kV, Pw=1.7ms, fr=5pps Peak Klystron voltage=98kv Rise-time(10-90%)=33µs Time(ms) Es=16kV, Pw=1.7ms, fr=5pps
27 Bouncer Voltage(V)/Current(A) Klystron Voltage Bouncer Current Bouncer Voltage Time(ms) Klystron Voltage(kV) Klystron Voltage(kV) ms 0.4ms 0.52ms 0.6ms 0.7ms Es=17kV fr=5pps Time(ms) Es=20kV, Pw=1.7ms, fr=5pps Rise-time(10-90%)=33µs Es=17kV, Pw=1.7ms, fr=5pps Flatness=0.8%(p-p)
28 FNAL/TTF #2,3 1 TTF MW :2ms :1:13 GTO L:600µH :25,000 ( ,3 TTF MWMBK :18,000 (2005 1
29 FNAL/TTF #2,3
30 Front side Back side QuickTimeý Dz ÉtÉHÉg - JPEG êlí ÉvÉçÉOÉâÉÄ Ç Ç±ÇÃÉsÉNÉ`ÉÉǾå ÇÈÇ ÇÕïKóvÇ-ÇÅB QuickTimeý Dz ÉtÉHÉg - JPEG êlí ÉvÉçÉOÉâÉÄ Ç Ç±ÇÃÉsÉNÉ`ÉÉǾå ÇÈÇ ÇÕïKóvÇ-ÇÅB #1 AC/Phase Controller #2 HV Tank #3 Capacitor Bank #4 Capacitor Bank Crowber Unit Cabinet:107(W)x173(D)x183(H) Total Size : 525(W)x173(D)x183(H) unit= cm #5 Main SW Bouncer Circuit Clipper Circuit
31 Size: 2400(W) x 1220(D) x 1250(H) unit: mm
32 AC 400V 3 50Hz Line Cabinet#1 AC Line SW Phase Controller Conductor SW Front side Back side
33 Cabinet#2 Diode IR #CO HV Oil Filled Tank Front side
34 Cabinet#3 CT LT-100-S CT LEM #LT-4000-S Voltage/Current Monitor PS for IGBT SW driver circuit Capacitors Bank Front side Current Limiter 0.1 Ignitrons Back side
35 Cabinet#4 10 µf Diode 0.1 Front side Capacitor Bank 50 µh 0.07 Back side Ignitrons
36 Cabinet#5 Trigger Fan-out Box Bouncer C2 2000µF IGBT SW Bouncer 330µH Strip Line Front side SCR SW Clipper Circuit C3 Back side
37 FNAL/TTF 1000V 500V/div, 1ms/div FNAL/TTF 2 2kV/div( ), 20kV/div( ), 1ms/div (p-p)<1% 122kV 2.2ms 10pps AC 274kW -5%~1%236kW 236kW/274kW=86%
38 PPT/TTF TTF PPT(Pulse-PlasmatechnikGmbH) FNAL/TTF 8
39 12KV,300KW IGCT 4.5kV,2.2kAx7 SH 133kJ/m 3
40
41
42 FNAL/TTF 24% 36% 3.6(W)x1.6m(D)x2.2(H)m
43 5MW TH2104C
44 Accelerator Laboratory (1) (FNAL/TTF ) ( 20%) ( 24%) (~6.5t) (2) ( 20%)
45 Accelerator Laboratory STF (1) (2)
46 Accelerator Laboratory STF (1) µ (2)
47 Series 4.5kV IGBTs
48 Main tank(2.4x1.2m) Capacitor tank(2.4x1.2m) Power Supply Inverter Rack(19 )
49
50
51 80kV ( )
52 RECTIFIER TRANSFORMER AND FILTERS SCR REGULATOR ENERGY STORAGE/SWITCHING BOOST TRANSFORMER HV RECTIFIER AND FILTER NETWORK 4mH 400A X3 -HV -HV -HV 10ohm 20mH CØ BØ 3Ø (ON/OFF) 6 EACH AØ BØ CØ.03uF.03uF.05uF VMON 13.8KV 3Ø 50mH INPUT LINE CHOKE 5 th HARMONIC TRAP 7 th HARMONIC TRAP 13.8kV AØ 4mH 400A RTN 6 EACH C SHUNT-PEAK 2300V 20kHz 1:18(gain 1:60) EQUIPMENT CONTROL RACK (FEEDBACK) (I/O) HV OUTPUT 140kV Klystron Fault energy <10J RECTIFIER TRANSFORMER AND FILTERS SCR REGULATOR HIGH VOLTAGE CONVERTER/MODULATOR EQUIPMENT CONTROL RACK 2.3(W)x4.0(L)x2.1(H) m
53 50kV, 309A KEK 50kV, 32µF,65kJ RF 10 MW 50kV 309A 27.68µP 64.6% R=50kV/309A =162 C=1.7ms/(162 x20%)=52µf E=1/2x52µFx(50kV) 2 =65kL
54
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