S2S3 S2S3 S2S4 S2S3 S2S3 S2S3 S2S3 ( ) ( ) PC3SGYIZ Date Mar. 3. 2004 SHARP Corporation
S2S3 2 4 3 2 3 4 Anode Cathode Anode/Cathode Cathode/Anode 3.6 ±0.3 3.6 ±0.3 2.54 ±0.25 2.54 ±0.25 SHARP mark "S" Anode mark 4 3 2S3 Date code (2 digit) 4.4 ±0.2 Model No. SHARP mark "S" Anode mark 4 3 2S3 4 Date code (2 digit) 4.4 ±0.2 Model No. 2 0.4 ±0. Factory identification mark 2 0.4 ±0. Factory identification mark VDE identification mark 0. ±0. 2.6 ±0.2 6 Epoxy resin 0.2 ±0.05 5.3 ±0.3 45 7.0 +0.2 0.7 0.5 +0.4 0.2 0. ±0. 2.6 ±0.2 6 Epoxy resin 0.2 ±0.05 5.3 ±0.3 45 7.0 +0.2 0.7 0.5 +0.4 0.2 2
990 99 992 993 994 995 996 997 998 999 2000 200 A B C D E F H J K L M N P R S T U V W X A B C 2 3 4 5 6 7 8 9 O N D 2002 2003 2004 2005 2006 2007 2008 2009 200 20 202 3 S2S3
S2S3 * *2 * 40 to 60%RH, AC for minute, f=60hz *2 For 0s *3 f=50hz sine wave (T a =25 C) I F 50 ma V R 6 V I T (rms) 0.05 A I surge *3 0.6 A V DRM 600 V V iso (rms) 3.75 kv T opr 30 to +00 C T stg 40 to +25 C T sol 260 C 0.2mm (T a =25 C) V F I F =20mA -.2.4 V I R V R =3V - - 0 µa I DRM V D =V DRM - - µa V T I T =0.05A V - - 2.5 I H V D =6V ma dv/dt V D =/ 0. - 3.5 2 V DRM 00 000 - V/µs - - 0 I FT V D =6V, R L =00Ω - - 7 ma - - 5 R ISO DC500V,40 to 60%RH 5x0 0 0 - Ω t on V D =6V, R L =00Ω, I F =20mA - - 00 µs 4
S2S3 DIN EN60747-5-2 00 3 000 750 S2S3000F S2S3Y00F S2S3A00F S2S3AY0F S2S3B00F S2S3BY0F I FT I FT [ma] (V D =6V, R L =00Ω ) MAX.0 Model No. S2S3R00F S2S3L00F S2S3RY0F S2S3LY0F S2S3RA0F S2S3LA0F S2S3RAYF S2S3RB0F - S2S3LB0F S2S3RBYF - R L MAX.7 MAX.5 5
S2S3 60 60 Forward current IF (ma) 50 40 30 20 0 RMS ON-state current IT (rms) (ma) 50 40 30 20 0 0 30 0 50 00 Ambient temperature T a ( C) 0 30 0 50 00 Ambient temperature T a ( C) 00 T a =00 C 00 Forward current IF (ma) 50 0 5 75 C 50 C 25 C 0 C 30 C Forward current IF (ma) 50 0 5 T a =75 C 50 C 25 C 0 C 25 C 0 0.5.5 2 2.5 3 Forward voltage V F (V) Minimum trigger current IFT (ma) 2 0 8 6 4 2 Rank L No rank Rank R 0 40 20 0 20 40 60 80 00 Ambient temperature T a ( C) V D =6V R L =00Ω Relative repetitive peak OFF-state voltage VDRM (Tj=Ta) / VDRM (Tj=25 C) 0.9..2.3.4.5.3.2. 0.9 0.8 Forward voltage V F (V) 0.7 40 20 0 20 40 60 80 00 Ambient temperature T a ( C) 6
S2S3 2.8 I T =50mA 0 V D =6V ON-state voltage VT (V).6.4.2 Holding current IH (ma) Repetitive peak OFF-state current IDRM (na) 0.8 40 20 0 20 40 60 80 00 0. Ambient temperature T a ( C) 0.0 00 200 300 400 500 600 OFF-state voltage V D (V) T a =25 C 000 V D =6V R L =00Ω T a =25 C Relative repetitive peak OFF-state current IDRM (Tj=Ta) / IRM (Tj=25 C) 0. 40 20 0 20 40 60 80 00 000 00 0 Ambient temperature T a ( C) 0. 0 20 40 60 80 00 Ambient temperature T a ( C) V D =600V 000 V D =6V R L =00Ω T a =25 C Turn-on time ton (µs) 00 Turn-on time ton (µs) 00 0 0 00 0 0 00 Forward current I F (ma) Forward current I F (ma) 7
S2S3 00 80 I F =20mA T a =25 C ON-state current IT (ma) 60 40 20 0 0 0.2 0.4 0.6 0.8.2.4.6.8 2 ON-state voltage V T (V) 8
S2S3 6.3 0.8 2.54.5 9
S2S3 S2S3 4 Load 2 3 Triac AC Line 0
( C) S2S3 300 : 260 C peak ( package surface : 250 C peak) 200 00 50 to 80 C, 20s or less 220 C or more, 60s or less 0 0 2 3 4 (min)
S2S3 2
0.5 S2S3 4.6 400 ±2 2.8 6.3 4.5 3
S2S3 F E D G I J H H A B C K A 2.0 ±0.3 B 5.5 ±0. C.75 ±0. D 8.0 ±0. E H I J K 7.4 ±0. 0.3 ±0.05 3. ±0. 4.0 ±0. 2.0 ±0. 5 MAX. F G 4.0 ±0. φ.5 0 +0. e d g a c f b a b 3.5 ±.5 c 80 ±.0 d 3 ±0.5 370 e f g 2 ±.0 2.0 ±0.5 2.0 ±0.5 4
S2S3 F E D G I J H H A B C K A 2.0 ±0.3 B 5.5 ±0. C.75 ±0. D 8.0 ±0. E H I J K 7.4 ±0. 0.3 ±0.05 3. ±0. 4.0 ±0. 2.0 ±0. 5 MAX. F G 4.0 ±0. φ.5 0 +0. e d g c a f b a b 3.5 ±.5 c 80 ±.0 d 3 ±0.5 80 e f g 2 ±.0 2.0 ±0.5 2.0 ±0.5 5
6 S2S3