PbTiO3(PTO) 14 2 5
1.1 1 1.2 2 2.1 PE-CVD 3 2.2 X 7 2.3 9 2.4 10 2.5 12 2.6 13 PTO Sawyer-tower 3.1 PTO 14 3.2 Sawyer-tower 16 3.2.1 3.2.2 Sawyer-tower 3.3 20 4.1 a c 25 4.2 26 4.3 27 4.4 27 5.1 34
1.1 1921 Valasek NaKC 4 H 6 /4H 2 O KH 2 PO 4 BaTiO 3 100 Tc KDP TGS DRAM Dynamic Random Access Memory SRAM Flash Flash FRAM(Ferro-electric Random Access Memory) FRAM DRAM
1 1.2 PTO a c
2.1 PE-CVD Plasma-Enhanced Chemical Vaper Deposition CVD 2. CVD 2. PE-CVD
CVD PE-CVD CVD PE-CVD CVD 2.1 CVD 2.1 CVD CVD 2.2 PE-CVD CVD CVD PE-CVD (O 2 )(N 2 ) (MFC)
Pb(DPM) 2 Ti( i-oc 3 H 7 ) 4 () (mixer) () 700 2.2 57mm 2 (13.56MHz)(RF:Radio Frequency)
O 2 MFC MFC MFC Pb(DPM) 2 Mixer N 2 Heater Vent Substrate Gas Nozzle Shield TMP RP To Exhaust RF Generator 13.56MHz Matching network 2.2 PE-CVD
2.2 X X-ray diffraction,xrd X X X X 2.3 2.3 2 X X 2 X X X ( )
X d X X d' 2.4 X NaI X 2 2.4 2.5 d 2d sinθ = nl X θ X sinθ 2.5 X
2.3 (Atomic Force Microscopy, AFM) AFM 2.6 AFM 2.6 AFM 2.7 AFM AFM AFM
A,B A-B A-B Z Z AFM Z 2.7 AFM AFM XY 1 10 10nm 2 2.4 2.8 3 (514.5 nm) 514.5 nm 2 CCD 10 50 100 514.5 nm
2 2400 /mm 1800 /mm CCD PC グレーティン 514.5 nm 2.8
2.5 2.9 10-4 Torr Au
2.6 PE-CVD X AFM
PTO Sawyer-tower 3.1 PTO PTO PTO MgO(100) Pt 100 PE-CVD PTO PTO Au 3.1 Pt Au Pt 3.1 Pt Au Pt Au ( C) ( C) ( ) g/cm 3 cal/mol C ev ev 195.08 3827 1772 1.39 21.37 21.37 fcc 9 2.128 196.96654 2710 1064.43 1.44 19.3 0.031 fcc 9.225 2.3086
FCC() Au PTO PTO Au Pt Pt PTO Au 0.2 mm 0.0314 mm 2 Au 191.34 m 0.0288mm 2 PTO 3.2 PTO PTO 17nm, 28nm, 39nm, 48nm, 58nm, 76nm, 89nm, 115nm, 170nm 3.2 PTO MOCVD 10 Pa 546 C 57 mm Pb(DPM2) Ti(I-OC3H7) O2 50 sccm 5 sccm 50 sccm
3.2 Sawyer-tower Sawyer-tower Sawyer-tower 3.2.1 ABO 3 Tetragonal Orthorhombic Rhombohedral PTO O A O Ti B Pb 3.1 PTO ABO 3 3.1 3.1 A B O Pb + Ti + O 3.2 3.2 PTO c PTO a c a c domain O Ti c Pb 3.2
3.3 3.1 3.4 3.4 O A-B B-C Pmax C Pr D Pmax F 3.3 Pmax B C Pr D O E G F 3.4 Pr C D F G Pr Ec PTO 3.1 E C
3.3.2 Sawyer-tower 3.5 OSILLATOAR HIGH SPEED POWER AMPLIFIER ground sample X(Ch 1) C x capacitor Y(Ch 2) C o X Yground OSILLOSCOPE 3.5 C x C o C x C o C x C o V Q/ C o ( 1) Q 3.4
OSILLATOAR OSILLATOAR 5V HIGH SPEED POWER AMPLIFIER P-E X Vx Y Vo X sample sample Vx 3.3 SBNT Othllo kv/cm C/cm 2 55 8.1 X Y X sample capacitor Vo Sample C x capacitor C o sample X sample capacitor sample Cx Co V Vx X V Vx Cx Co 101 pf 4700 pf Sawyer-tower Othello ( Channel Ferroelectric Measurement System ) SBNT 3.3 Othello SBNT Sawyer-tower SBNT 3.6 3.4 3.4 SBNT Sawyer-tower kv/cm C/cm 2 74 85 7 11
SBNT 20 15 10 P (µc/cm 2 ) 5 0-5 -10-15 -20-400 -300-200 -100 0 100 200 300 400 500 E (kv/cm) 3.6 SBNT Sawyer-tower Othello 35% 54% -14% 35% BNC 3.3 PTO 3.7 Au PTO Pt MgO 3.7 Au Pt
E, E=V/d (1) d Sample Capacitor Q=CV (2) sample C Capacitor P P=Q/S (S Au ) 3.8 17nm 28nm 39nm 3.9 48nm 58nm 76nm 3.10 89nm 115nm 170nm
0.10 thickness 17nm 0.08 0.06 P (µc/cm 2 ) 0.04 0.02 0.00-0.02-0.04-0.06-0.08-0.10-4000 -2000 0 2000 4000 6000 E (kv/cm) P (µc/cm 2 ) thickness 28nm 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00-0.02-0.04-0.06-0.08-0.10-0.12-0.14-3000 -2000-1000 0 1000 2000 3000 E (kv/cm) 0.03 thickness 39nm 0.02 P (µc/cm 2 ) 0.01 0.00-0.01-0.02-0.03-1000 -500 0 500 1000 E (kv/cm) 3.8 PTO 17nm,28nm,39nm
0.04 thickness 48nm 0.03 P (µc/cm 2 ) 0.02 0.01 0.00-0.01-0.02-2000 -1500-1000 -500 0 500 1000 1500 2000 E (kv/cm) 0.10 0.10 thickness 58nm 0.05 P (µc/cm 2 ) 0.00-0.05-0.10-0.15-0.20-0.25-1000 -800-600 -400-200 0 200 400 600 800 1000 E (kv/cm) 30 thickness 76nm 20 10 P (µc/cm 2 ) 0-10 -20-30 -1000-800 -600-400 -200 0 200 400 600 800 1000 E (kv/cm) 3.9 PTO 48nm,58nm,76nm
thickness 89nm 0.10 0.05 P (µc/cm 2 ) 0.00-0.05-0.10-300 -200-100 0 100 200 300 E (kv/cm) 30 thickness 115nm 20 10 P (µc/cm 2 ) 0-10 -20-30 -40-800 -600-400 -200 0 200 400 600 E (kv/cm) 60 60 thickness 170nm 40 20 P (µc/cm 2 ) 0-20 -40-60 -80-800 -600-400 -200 0 200 400 600 800 E (kv/cm) 3.10 PTO 89nm, 115nm, 170nm
4 4.1 a c PTO X X a 4.1 c 4.2 4.1 4.2 PTO 001100 PTO 100 PTO 001 PTO 4.4 PTO 100 PTO 001 PTO 001 c 4.1 Pt(100),PTO(100),PTO(001) 4.1 4.2 PTO a c Pt 100 3.93 4.3 PTO 100 3.90 4.3 a c 4.3 c a 4.4 PTO 001 4.15 PTO(100) c PTO(100) a PTO 100 PTO 001 Pt 100 PTO 100 PTO 001 4.1 c PTO 100
PTO 001 Pt c PTO c 4.5 (001)(100) 4.5 001 (100) (001) c c PTO PTO(100) PTO(001) 4.5 PTO(100) PTO(001) 4.2 76nm, 115nm, 170nm PTO 4.2 4.2 4.2 PTO (S) P=Q/S 76nm 115nm 170nm µc/cm 2 6 12 16 kv/cm 237 170 166
,X ( 4.2) 0 1 4.3 PTO AFM 4.6 4.7 RMS 4.8 4.4 48nm 89nm RMS RMS 4.9 89nm 76nm 89nm RMS PTO 2 RMS 4.3 17nm, 28nm, 39nm, 48nm, 58nm PTO a c 89nm PTO a c 76nm, 115nm, 170nm PTO
PTO / Pt (100) / MgO (100) 17nm (001) (100) MgO (200) Pt (200) x2 28nm x2 Intensity (relative) 39nm 48nm x2 58nm 10 20 30 40 50 60 2θ (deg.) 4.1 PTO X 17nm-58nm
PTO / Pt (100) / MgO (100) 76nm (001) (100) (002) MgO (200) Pt (200) 89nm Intensity (relative) 115nm 170nm 10 20 30 40 50 60 2θ (deg.) 4.2 PTO X 76nm-170nm
1.0 PTO / Pt(100) / MgO(100) 0.8 α = I (001) / I (001) + I (100) 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 180 thickness (nm) 4.3 a c
17nm 48nm 28nm 58nm 39nm 4.6 PTO AFM 17nm-58nm
76nm 115nm 89nm 170nm 4.7 PTO AFM 76nm-170nm
4 3 RMS (nm) 2 1 0 0 20 40 60 80 100 120 140 160 180 thickness (nm) 4.8 RMS
5 5.1 sawyer-tower CVD PTO (1) Sawyer-tower Sawyer-tower (2) PTO c c RMS
(1) IC -FRAM - (2) (3) (4) (5) (6)