PC2XNNSZF PC2XNNSZF = UL577 2 fi le No. E68 PC2 BSI BS-EN665 fi le No. 787 BS-EN695 fi le No. 79 PC2 SEMKO EN665 EN695 PC2 DEMKO EN665 EN695 PC2 NEMKO EN665 EN695 PC2 FIMKO EN665 EN695 PC2 CSAfile No.CA952 PC2 VDEDIN EN677-5-2 fi le No. 887(PC2 UL9V- DIN EN677-5-2 DIN VDE88 Date Sep.. 26 SHARP Corporation
2 2 Anode Cathode Emitter Collector ex. PC2XNNSZF ex. PC2XNYSZF Anode mark Rank mark Factory identification mark Date code Anode mark Rank mark Factory identification mark Date code.2 ±..6 ±.2 2 θ PC2 6.5 ±. 7.62 ±. Epoxy resin.26 ±. θ : to 2.5 ±.25 θ.58 ±. 2.7 ±.5.58 ±.. ±.5.5 ±.5.5 TYP..5 ±..2 ±..6 ±.2 2 θ PC2 6.5 ±. 2.5 ±.25.58 ±. 7.62 ±..58 ±. Epoxy resin.26 ±. θ : to θ SHARP mark "S" VDE idenfication mark 2.7 ±.5. ±.5.5 ±.5.5 TYP..5 ±..2g.2g ex. PC2XNNFZF ex. PC2XNYFZF.2 ±. Rank mark Anode mark.6 ±.2 Factory identification mark Date code 2.5 ±.25.2 ±. Rank mark Anode mark.6 ±.2 Factory identification mark Date code 2.5 ±.25 PC2 2 PC2 2.58 ±.. ±..58 ±..5 ±.5 6.5 ±.. ±. 6.5 ±. SHARP mark "S" VDE idenfication mark 7.62 ±..58 ±. 7.62 ±..58 ±..5 ±.5 2.7 MIN. Epoxy resin.6 ±.5.26 ±..5 ±. 2.7 MIN. Epoxy resin.6 ±.5.26 ±..5 ±..2g.2g 2
PC2XNYIPF PC2XNNUPF.2 ±. Rank mark Anode mark.6 ±.2 Factory identification mark Date code 2.5 ±.25.2 ±. Rank mark Anode mark.6 ±.2 Factory identification mark Date code 2 PC2.58 ±. 2 PC2.58 ±. 6.5 ±. SHARP mark "S" VDE idenfication mark. ±. 6.5 ±. 7.62 ±. 2.5 ±.25.58 ±..26 ±. 7.62 ±..5 ±.25.22g.22g PC2XNYUPF.2 ±. Rank mark Anode mark.6 ±.2 Factory identification mark Date code 2 PC2.58 ±.. ±. 6.5 ±. SHARP mark "S" VDE idenfication mark 7.62 ±. 2.5 ±.25.58 ±..25 ±.25.26 ±..5 ±.5.58 ±..5 ±.5.75 ±.25.25 ±.25.26 ±. Epoxy resin.6 ±.5.75 ±.25.5 ±.5.5 ±.. +.. Epoxy resin. +..5. +.. 2.5 ±.25 2 MAX.75 ±.25 Epoxy resin.6 ±.5.75 ±.25 2 MAX.5 ±..22g
99 A 22 P 99 B 2 R 2 992 C 2 S 99 D 25 T 99 E 26 U 5 995 F 27 V 6 996 H 28 W 7 997 J 29 X 8 998 K 2 A 9 999 L 2 B O 2 M 22 C N 2 N SnCu (Cu : TYP. 2%) SnBi (Bi : TYP. 2%) SnCu (Cu : TYP. 2%)* SnCu (Cu : TYP. 2%)
(T a=25 C) I F 5 ma I FM A V R 6 V P 7 mw V CEO 7 V V ECO 6 V I C 5 ma P C 5 mw P tot 2 mw V iso(rms) 5 kv T opr + C T stg 55 +25 C T sol 26 C * μs Duty ratio :. *2 6%RH, AC for minute, f=6hz * For s (T a=25 C) V F I F=2mA.2. V I R V R=V μa C t V=, f=khz 25 pf I CEO V CE=5V, I F= na BV CEO I C=.mA, I F= 7 V BV ECO I E=μA, I F= 6 na I C I F=5mA, V CE=5V 2.5 2 ma V CE(sat) I F=2mA, I C=mA..2 V R ISO DC5V, 6%RH 5 Ω C f V=, f=mhz.6 pf f C V CE=5V, I C=2mA, R L=Ω, db 8 khz t r 8 μs V CE=2V, I C=2mA, R L=Ω t f 8 μs 5
I C [ma] (I F=5mA, V CE=5V, DIN T a=25 C) EN677-5-2 PC2XNNSZF PC2XNYSZF PC2XNNFZF PC2XNYFZF 2.5 2 PC2XNSZF PC2XYSZF PC2XNFZF PC2XYFZF L 2.5 7.5 Model No. PC2X2NSZF PC2X2YSZF PC2X2NFZF PC2X2YFZF M 5 2.5 PC2X5NSZF PC2X5YSZF PC2X5NFZF PC2X5YFZF N 2 PC2X8NSZF PC2X8YSZF PC2X8NFZF PC2X8YFZF E 5 DIN EN677-5-2 Model No. I C [ma] (I F=5mA, V CE=5V, T a=25 C) PC2XNYIPF PC2XNNUPF PC2XNYUPF 2.5 2 PC2XYIPF PC2XNUPF PC2XYUPF L 2.5 7.5 PC2X2YIPF PC2X2NUPF PC2X2YUPF M 5 2.5 PC2X5YIPF PC2X5NUPF PC2X5YUPF N 2 PC2X8YIPF PC2X8NUPF PC2X8YUPF E 5 6
5 Forward current IF (ma) 2 Diode power dissipation P (mw) 8 7 6 2 25 5 55 75 25 Ambient temperature T a ( C) 25 5 55 75 25 Ambient temperature T a ( C) 25 25 Collector power dissipation PC (mw) 2 5 5 Total Power dissipation Ptot (mw) 2 5 5 25 5 75 25 Ambient temperature T a ( C) 25 5 75 25 Ambient temperature T a ( C) Peak forward current IFM (ma) Pulse width μs T a =25 C Forward current IF (ma) T a =75 C 5 C 25 C C 25 C 2.5.5 2 2.5.5 Duty ratio Forward voltage V F (V) 7
Current transfer ratio CTR (%) 25 2 5 5 V CE =5V T a =25 C. Collector current IC (ma) 6 5 8 2 6 2 8 2 6 I F =ma P C (MAX.) I F =2mA I F =ma I F =5mA T a =25 C 2 5 6 7 8 9 Forward current I F (ma) Collector-emitter voltage V CE (V) Relative current transfer ratio (%) 5 5 25 5 75 Ambient temperature T a ( C) I F =5mA V CE =5V Collector-emitter saturation voltage VCE (sat) (V).6..2..8.6..2 Ambient temperature T a ( C) I F =2mA I C =ma 2 6 8 Collector dark current ICEO (A) 5 V CE =5V 6 7 8 9 Response time (μs) t d t s t r t f V CE =2V I C =2mA T a =25 C 2 6 8 Ambient temperature T a ( C)... Load resistance (kω) 8
Input R D R L V CC Output V CE Input Output Please refer to the conditions in Fig.2. t d t s t r % 9% t f Voltage gain Av (db) 5 5 5 V CE =5V I C =2mA T a =25 C R L =kω kω Ω 2. Frequency (khz) Collector-emitter saturation voltage VCE (sat) (V) 5.5.5 2.5 2.5.5 I C =.5mA ma ma 5mA 7mA 2 6 8 2 6 8 2 Forward current I F (ma) T a =25 C 9
8.2.2.7.7 2.5 2.5 2.2 2.2
( C) : 26 C peak (package surface : 25 C peak) 2 5 to 8 C, 2s or less 22 C or more, 6s or less 2 (min)
2
2 5.8.8 52 ±2 6.7 5.8 52 ±2 5.9 6.5
F E D G I J H H A B C K A B C D E 6. ±. 7.5 ±..75 ±. 8. ±. H I J K. ±.. ±.5.2 ±. 5. ±. 2. ±. 5 MAX. F G. ±. φ.5 +.. e d g c a f b a φ e φ2 ± b 7.5 ±.5 c φ ± d φ. ±.5 f g 2. ±.5 2. ±.5
F E D G C I J H H A B K 5 MAX. A B C D E 2. ±..5 ±..75 ±. 8. ±. H I J K 2. ±.. ±.5. ±. 5. ±. 2. ±. F G. ±. φ.5 +.. e d g c a f b a φ e φ2 ± b 25.5 ±.5 c φ ± d φ. ±.5 f g 2. ±.5 2. ±.5 5
[E25] 6