A 1) A.1 (point-by-point measurement) (full-field measurement) A.1 A.2 A.1.1 (1) (electric resistance strain meter) 0.2ο120mm 1 10 6 (2) 2 2 (extensometer) 157
158 A (3) X X (X-raystressmeasurement) X X 10μm (4) X X (neutron stress measurement) X 1000 1 (5) (magnetostriction) (magnetostriction stress measurement) (6) ( ) 2 (acoustoelastice effect) (acoustoelastic method) B V T 1 V T2 (V T1 + V T2 )=2 = B 0 + C A (ff 1 ff 2 ) (A.1) V T1 V T2 C A B 0 ( ) B o mm 2
A.1. 159 (7) 2 2 (8) (Caustics) (9) (10) (laser Raman microspectroscopy) μm (11) (higher order Laue zone line : HOLZ) (convergent beam electron diffraction method : CBED method) 10nm (12)
160 A (hole-drilling method) Stoney X X A.1: ( ) X X ffl (μm )
A.1. 161 A.1.2 (1) (photo elasticity) 2 3 A.2: ffl
162 A (2) (photoeastic coating method) (3) (moire method) (4) (5) (holographic method) (6) (speckle method) () ( ) (7) CCD
A.2. 163 (9) (brittle lacquer coating) (8) (thermoelastic effect) (thermoelastic method) (10) A.2 A.2.1 (Cu) (Ni) A.1 μm R ( A.1 ) " R R R = K" (A.2)
164 A K (gage factor) 120Ω 2.0 K R R R=R K A.1: A.2: A.2.2 (Wheatstone bridge) A.2 3 (a) 1 1 (b) 2 (active gauge) (dummy gauge) (c) 4 4 Hooke 2 2 90 ffi 3 800 ffi C 270 ffi C 1% 3000ο4000 10 6 10000ο20000 10 6 10ο20% (K=80 130)
A.3. 165 A.3 A.3.1 X X X A.3 X 2 = 0 =tan 0 " (A.3) 0 tan 0 90 ffi X X ff x ff y 1 ν 2 =2 0 2 tan 0 ff x sin 2 ψ + 2ν E E tan 0 (A.4) E ν ff x ( A.3 ) X sin 2 ψ 2 ψ 2 A.4 2 sin 2 ψ M E=(1 + ν) ff x sin 2ψ ψ 4 ff x S ff x = SM» E ß S = cot 0 1+ν 180 M = @(2 ) @(sin 2 ψ) (A.5) (A.6) (A.7) 2 deg ß=180 rad deg A.4 S sin 2 ψ A.3: X A.4: 2 sin 2 ψ
166 A sin 2 ψ 2 0 X X Kroner E ν X A.3.2 X X 10μm 0.1mm X X X X 2 1 X (ψ ) 2 X ( 0.7 ffi ) ±2mm X (PSD) X 2 sin 2 ψ 3 ffl ffl 2 2 A.5 < 110 > TiN 1 X 5GPa X X (grazing incidence X-ray diffracrtion)
A.3. 167 (TiN ) A.5: X A.3: X mm Al Ti Fe Ni Cu 1230 50 85 40 53 (150keV) 27 13 6.5 5 5 (150keV) 15.4 3.8 1.4 1.0 1.3 (150keV) 6.5 1.0 0.35 0.24 0.23 Cu-Kff 0.074 0.011 0.004 0.023 0/022 (a) A.6: (b) A.3.3 X X X A.3 66% mm Cu 200 1000 mm 100μm d 0 3 6 A.6 8 3
168 A A.3.4 X X 1) 2) 3) (0.3ο300 kev) 4) 5) (Kff 2 ) 3 (synchrotron radiation:sr) Spring-8 X X X A.3 X 2 (KEK) (PF) A.4 A.4.1 (1) 2 (photoelastic effect) (Brewster's law) h ff 1 ff 2 ffi ff 1 ff 2 ffi = 2ß Ch(ff 1 ff 2 ) (A.8) C ff = C= o ffi A.7 ( )P 1 P 1 (μ ) 2 M ff 1 y ffi ff 1 ;ff 2 2 A 1 ;A 2 ( )P 2 (ß ) P 1 P 2 A 0 1 ;A0 2 x I = ff 2 sin 2 2ffi sin 2 ffi 2 (A.9) ffi ffi =1; 2; 8 < : ffi =2nß I =0 ffi =(2n +1)ß I = maximum (A.10)
A.4. 169 ffi (isochromatic line) (fringe order) N = ffi=2ß (N =0; 1; 2; ) ffi ffi = nß=2 I =0 (isoclinic line) P 1 P 2 A.8 1/4 (ß/2 ) 1/4 Q 1 Q 2 A.8 2 1 O L: C 1 C 2 : F: P 1 :Q 1 Q 2 :1/4 L 1 L 2 : M:P 2 :C: O: A.8: A.7: 2 (2) 3 120ο130 ffi C 2 3 (3) N
170 A A.4.2 " (moiré)" ( ) 2 () (moiré fringe) ( ) =( ) () (geometric moiré) (moiréinterferometry) 3 1 " ρ ρ((1 + ") d " " = p d a = p d (A.11) d 1 2 2 ( ) 20 40 /mm 0.1% M 1=M M 100 1000/mm 2 (phase-shifting moiré interferometry) A.9 (a) 2 A; B ff 1
A.4. 171 (a) (b) A.9: HM : M:WG SF: PM: SP: RT A.10: A.11: PMMA sin ff = f = p (A.12) f A 1 ;B 1 f + f 1 A 1 ;B 1 y () v v N v v = N 2f = Np (A.13) 2 N v 2 4 x; y
172 A A.10 (a) 2 CCD A.11 I A.5 A.5.1 (thermoelastic effect) Kelvin Kelvin T T = kt ff = ff T ff (A.14) ρc p k C p ff ρ T ff T ff A.5.2 A.5.1 T ff k 3.5 10 12 m 2 /N 8.8 10 12 m 2 /N 10MPa T 0.01K 0.026K mk 20mK A.12 1mK 1MPa
A.5. 173 A.12: A.13: ( ) A.14: ( ) A.5.3 A.13 I A.14 A.5.4 1) 2) 3) 4) 5)
174 a) b) c) (1) Lesniak et al. (2) (edge efrect) (3) 1) pp.423-440 2004