c 2019 i 3 (1) q V I T ε 0 k h c n p (2) T 300 K (3) A
ii c 2019 i 1 1 2 13 3 30 4 53 5 78 6 89 7 101 8 112 9 116 A 131 B 132
c 2019 1 1 300 K 1.1 1.5 V 1.1 qv = 1.60 10 19 C 1.5 V = 2.4 10 19 J (1.1) 1.2 l 5.0 µm n V (1) 1.0 V v (2) 1.5 10 5 m/s 1.2 (1) E E = V l = 1.0 V 5.0 µm = 2.0 105 V/m (1.2)
2 c 2019 1 v v = µ n E = 0.15 m 2 /(V s) 2.0 10 5 V/m = 3.0 10 4 m/s (1.3) (2) E E = v µ n = 1.5 105 m/s 0.15 m 2 /(V s) = 1.0 106 V/m (1.4) V V = El = 1.0 10 6 V/m 5.0 µm = 5.0 V (1.5) 1.3 n i 2.5 10 18 /m 3 µ n 0.40 m 2 /(V s) µ p 0.20 m 2 /(V s) σ 1.3 σ = q ( µ n + µ p ) ni = 1.60 10 16 C ( 0.40 m 2 /(V s) + 0.20 m 2 /(V s) ) 2.5 10 18 /m 3 = 0.24 S/m (1.6) 1.4 1.1 1.0 E g [ev] n i [/m 3 ] 0.69 2.5 10 18 1.12 1.5 10 16 1.43 1.1 10 13
c 2019 3 (1) 1.1 300 K (2) 1.4 (1) 1 (2) 2 1.5 n µ n µ p n i (1) σ (2) σ min (3) n 1.5 (1) p np = n 2 i ) n 2 i σ = qµ n n + qµ p p = q (µ n n + µ p n (1.7) (2) µ n n + µ p n i 2 n 2 n 2 i µ n n µ p n = 2 µ n µ p n i (1.8) 1 188 (9.31) 2 9.4
4 c 2019 1 (3) (1.8) σ min = 2q µ n µ p n i (1.9) µ n n = µ p n i 2 n (1.10) n = µp µ n n i (1.11) 1.6 4.6 kg 9.2 µg S 1.0 cm 2 l 5.4 cm 1.5 V V 5.0 ma I 28 11 6.0 10 23 /mol (1) (2) R (3) σ (4) [g/m 3 ] (5) 4.6 kg (6) 9.2 µg (7) (8) 1.6 (1) p (2) (3) R = 1 σ l S σ = R = V I = 1.5 V 5.0 ma = 3.0 102 Ω (1.12) l RS = 5.4 cm 3.0 10 2 = 1.8 S/m (1.13) Ω 1.0 cm2
c 2019 5 (4) 1 (5) 28 6.0 10 23 /mol 4.7 10 23 g (1.14) 1 5.0 10 28 /m 3 28 6.0 10 23 /mol 2.3 106 g/m 3 (1.15) 4.6 kg 2.3 10 6 g/m 3 2.0 10 3 m 3 (1.16) (6) 1 (11/6.0 10 23 ) g (7) 9.2 µg 11 6.0 10 23 /mol (8) p σ = qµ p p 5.0 10 17 (1.17) 5.0 10 17 2.0 10 3 m 3 2.5 1020 /m 3 (1.18) µ p = σ qp = 1.8 S/m 1.6 10 19 C 2.5 10 20 /m 3 0.045 m2 /(V s) (1.19) 1.1 (1) (2) (3) (4) (5) n (6) p (7) n (8) (Si) (P) (9) (10) (11) (12)
6 c 2019 1 (13) 1 1 1 (14) (15) p 1.2 (1) 2 (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (10) (12) (10) (11) (13) (12) (14) (12) (15) (16) (15) 1.3 1.4 [1] [15] [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [2] [8] [7] [13] [14] [15] n 3 p 5 4 1.5 1 10
c 2019 7 (Si) 1 1 2 (GaAs) 2 3 4 5 6 4 7 8 4 9 7 8 9 4 10 1.6 1.1 (a) (b) Si Si Si Si Si Si E g E g Si Si Si Si (a) (b) (c) (d) 1.1 1.6 1.7 1.2 n p (a) (c) E g (a) (b) (c) 1.2 1.7 1.8 1.3
8 c 2019 1 伝導帯 禁制帯 伝導帯 禁制帯 (a) (b) (c) 1.3 1.8 1.9 1.4 S l V I (i) (x) S l I A V 1.4 1.9 v E µ v = (i) (1.20) 1 A N S n v N = (ii) (1.21) I 1 A N q (1.21) (1.20) (1.23) I = (iii) (1.22) I = (iv) (1.23) I = (v) (1.24)
c 2019 9 E V l E = (vi) (1.25) (1.25) (1.24) I = (vii) (1.26) R R = (viii) (1.27) σ S l R = (ix) (1.28) (1.27) (1.26) (1.28) σ σ = (x) (1.29) 1.10 (1) (9) S l ρ R (1) V E (2) I J (3) V = RI E, J ρ (4) v n (5) I q (6) J (7) µ v (8) (4) (7) (8) ρ (9) 1.11 [m 2 /(V s)] [cm 2 /(V s)] A 300 K Si [cm 2 /(V s)] 1.12 4.0 10 20 J
10 c 2019 1 1.13 T [K] kt [J] k (1) 300 K (2) 300 K 1.14 (1) 1 4 N v [/m 3 ] (2) n N v n/n v (3) σ (4) ρ 1.15 (1) σ i µ n µ p q n i (2) σ min µ n µ p q n i (3) σ i 3 (4) σ min 3 1.16 1.5 l 2.5 mm 30 V V l 電子正孔 E 1.5 1.16 (1) E (2) 1.5 (3) v n (4) v p
c 2019 11 1.17 25 µm p Si (1) 10 V (2) Si 1.0 10 5 m/s 1.18 N P 9.0 10 22 /m 3 (1) N P /N Si (2) n (3) p (4) σ (5) ρ 1.19 5.0 10 20 /m 3 p n i 2.5 10 18 /m 3 µ n 0.40 m 2 /(V s) µ p 0.20 m 2 /(V s) (1) σ (2) n 1.20 t 5.0 µm w 20 µm l 1.2 mm R 10 kω (1) (2) σ (3) N P (4) p 1.21 S 1.0 µm 2 l 3.2 µm p R 1.0 MΩ (1) A (2) ρ (3) σ
12 c 2019 1 (4) 1.22 N 2.5 10 22 /m 3 n InP w 5.0 µm t 2.0 µm l 0.46 mm 23 V V 0.92 ma I (1) R (2) σ (3) µ (4) v 1.23 N D 2.5 10 22 /m 3 n GaAs w 10 µm t 2.0 µm l 0.64 mm R 10 kω GaAs µ n 1.24 σ i 1.2 10 6 S/m 3 n 5.0 10 20 /m 3 p 4.5 10 5 /m 3 σ 36 S/m (1) µ n (2) n i (3) µ p 3
c 2019 13 2 2.1 300 K I 0 1.0 10 11 A pn (1) 300 K 0.518 V (2) 1.0 ma 2.1 (1) (2) ( ) ] [ ( qv 1.60 10 I = I 0 [exp 1 = 1.0 10 11 19 ) ] C 0.518 V A exp kt 1.38 10 23 1 J/K 300 K 4.95 10 3 A = 4.95 ma (2.1) V = kt [ ] I q ln + 1 = 1.38 [ 10 23 J/K 300 K 1.0 10 3 ] A I 0 1.6 10 19 ln C 1.0 10 11 A + 1 0.477 V (2.2) 2.2
14 c 2019 2 V I ( ) qv I I 0 exp kt (2.3) T 300 K (1) 10 % V 0 (2) V 0 V 1 I 1 2I 1 V 2 V 2 V 1 2.2 (1) 1.1 I 0 [exp ( ) ] ( ) qv0 qv0 1 = I 0 exp kt kt (2.4) V 0 = kt q ln 11 = 1.38 10 23 J/K 300 K 1.60 10 19 C ln 11 62 mv (2.5) (2) I 1 = I 0 exp ( ) ( ) qv1 qv2, 2I 1 = I 0 exp kt kt (2.6) ( ) q (V2 V 1 ) exp kt = 2I 1 I 1 = 2 (2.7) V 2 V 1 = kt q ln 2 = 1.38 10 23 J/K 300 K 1.60 10 19 C ln 2 18 mv (2.8) 2.3 I 0 1.0 10 11 A 100 Ω R 2.1 I 20 ma V 0 2
c 2019 15 I V 0 R 2.1 2.3 2.3 [ ] kt I q ln + 1 = 1.38 [ ] 10 23 J/K 300 K 20 ma I 0 1.6 10 19 ln C 1.0 10 11 A + 1 0.554 V (2.9) V 0 = 0.554 V + 100 Ω 20 ma = 0.554 V + 2.00 V = 2.55 V (2.10) 2.4 pn C J V ϕ D C 0 ϕ D C J = C 0 ϕ D V (2.11) (1) V 0.00 V C J 50 pf V 1.44 V C J 30 pf ϕ D (2) V 0.63 V C J 2.4 (1) V 0 C J = C 0 C 0 50 pf (2.11) ( CJ ) 2 V ( ) 2 30 pf ( 1.44 V) ϕ D = C 0 ( CJ C 0 ) 2 1 = 50 pf ( ) 2 30 pf 1 50 pf = 0.81 V (2.12)
16 c 2019 2 (2) ϕ D C J = C 0 ϕ D V 0.81 V = 50 pf = 37.5 pf (2.13) 0.81 V + 0.63 V 2.5 2.2 E 0 E 1 sin ωt I E 1 E 0 ) qe 1 kt I = I s exp ( qv kt E 1 sinw t I E 0 V 2.2 2.5 (1) E 1 = 0 I 0 (2) E 1 0 I I 0 (3) I = I 0 + I 1 sin ωt I 1 x 1 exp x 1 + x 2.5 (1) V = E 0 I 0 = I s exp ( ) qe0 kt (2.14) (2) ( ) ( ) ( ) q (E0 + E 1 sin ωt) qe0 qe1 sin ωt I = I s exp = I s exp exp kt kt kt ( ) qe1 sin ωt = I 0 exp (2.15) kt
c 2019 17 (3) ( ) qe1 sin ωt exp kt 1 + qe 1 sin ωt kt (2.16) ( I I 0 1 + qe ) 1 sin ωt = I 0 + I 1 sin ωt (2.17) kt I 1 = I 0qE 1 kt (2.18) 2.6 2.3 V D I D 0 V B V D I D = V D V B V D V B r (1) E V (2) R L E V (2.19) R 0 E V R L 2.3 2.6 2.6 (1) E V = R LE R L + R 0 (2.20)
18 c 2019 2 E R 0 E V R 0 E V R L V R 0 R L E V R 0 = V R L + I D = V R L + V V B r (2.21) V V = R L (R 0 V B + re) R L R 0 + rr L + rr 0 (2.22) (2.20) (2.22) R L E = R L (R 0 V B + re) (2.23) R L + R 0 R L R 0 + rr L + rr 0 E = ( 1 + R ) 0 V B (2.24) R L R L E R L + R 0 V = R L (R 0 V B + re) R L R 0 + rr L + rr 0 ( 1 + R 0 E R L ) V B E ( 1 + R ) (2.25) 0 V B R L (2) E (2.22) R L R 0, r R L R 0 + rr L + rr 0 R L (R 0 + r) (2.26) V = R L (R 0 V B + re) R 0V B + re R L R 0 + rr L + rr 0 R 0 + r (2.27) 1 2.1 (1) (2) pn 1 R 0 r V V B
c 2019 19 (3) pn p n (4) pn (5) (6) (7) (8) (9) n p (10) (11) (12) (13) (14) pn n p 2.2 (1) (2) (3) (4) (5) pn n p (6) (7) (8) pn (9) (8) pn (10) (9) (11) (3) (12) (11) (13) (11) (14) (15) (16) (15) 2.3 2.4 A (a) K (b) (c) 2.4 2.3 (1) 2.4 A K (2) 2.4 (a) A K n
20 c 2019 2 (3) 2.4 (b) (4) 2.4 (c) (5) 2.4 2.5 pn A B C (a) (b) 2.5 2.4 (c) 2.5 (a) pn 2.5 (b) [1] [2] [3] [3] [2] [4] 2.5 (c) A [2] [5] [3] [6] [7] (1) [1] [7] p n (2) A (3) [7] 2.5 B C 2.5 2.6 pn (B) (A) 2.6 2.5 (1) 2.6 E F (2) 2.6 (A)
c 2019 21 (3) 2.6 (B) (4) pn 2.6 2.7 pn E F E F 禁制帯 2.7 2.6 (1) (2) (3) (4) 2.7 2.8 I V B B A C 0 V 2.8 2.7 (1) A
22 c 2019 2 (2) B (3) B (4) C 2 (5) V B (6) C 2.8 2.1 pn (1) (2) 2.1 2.8 V [V] I [ma] 0.600 0.235 0.650 (1) (2) 5.00 0.700 11.2 2.9 2.9 (a) pn 2.9 (b) R 20 Ω E 1.20 V I [ma] 80 60 40 20 0 0 0.4 0.8 V D [V] (a) 1.2 E I (b) R V D 2.9 2.9 (1) 2.9 (b) E I R V D (2) (1) 2.9 (a) (3) 2.9 (b) V D I (2) V D I 2
c 2019 23 2.10 2.10 pn R 10 Ω I V R V D 2.10 2.10 (1) 2.10 V 1.00 V 40 ma (2) 2.10 I 0 (3) 2.10 I 80 ma V 2.11 2.11 E 10.0 V R 1 20.0 kω R 3 160 kω D 1.00 10 15 A V 4.00 V R 2 A D E R 1 R2 R 3 V 2.11 2.11 (1) D I D (2) D V D (3) A V A (4) R 1 I 1 (5) R 2 I 2 (6) R 2 2.12 pn V 0.500 V I T 300 K (1) V 0.510 V I I /I
24 c 2019 2 (2) V I I I 10 V 2.13 pn 300 K 0.60 V 4.0 ma E g exp( qe g /kt ) (1) I s(300) (2) 323 K(50 C) I s(323) (3) 323 K 0.60 V (4) 273 K 0 C) I s(273) (5) 273 K 0.60 V 2.14 pn 2.12 20 I [ma] 10 0 0.5 0.6 0.7 0.8 V [V] 2.12 2.14 (1) 2.12 V 0.700 V (2.28) V = V 0 + R 0 I (2.28) 2.2 V I (2.28) V 0 R 0 3 2.2 2.14 V [V] I [ma] 0.695 10.6 0.705 15.6 (2) pn 3
c 2019 25 (3) V V 0 I 3 2.15 pn 2.13 V 0 V D 0.60 V 500W 900W V 500W D 100W 2.13 2.15 2.16 2.14 pn p 2.50 10 22 /m 3 p n n n0 p p0 n p0 exp(qv/kt) [B] [A] n p0 0 2.14 2.16 p n0 x (1) [A] 0 (2) [B] (3) p [A] 3 (4) pn p 2 (5) p p p0 3
26 c 2019 2 (6) p n p0 3 (7) V [A] ( x ) = 0 p n p0 exp qv kt 0.600 V x = 0 p n p(0) 3 (8) V x = 0 p p p (0) p p p0 [B] 0.600 V p p (0) 3 2.17 pn J D n D p n p dn dp J = qd n qdp dx dx (2.29) (1) n n n 0 p (2.30) x V T L ] p = p 0 [e qv kt 1 e L x + p 0 (2.30) n J x J (x) (2) (3) n J x 2.18 [1] [5] pn [1] [2] pn [3] [1] [2] [4] [2] [5] 2.19 pn ϕ D N A N D n i ϕ D = kt q ln N AN D n i 2 (2.31)
c 2019 27 pn W d ε r W d = 2εrε 0 (N A + N D ) ϕ D qn A N D (2.32) (1) 1.0 10 20 /m 3 1.0 10 24 /m 3 pn ϕ D 3 (2) (1) pn W d 3 2.20 pn C J ϕ D C 0 V C J = C 0 ϕd ϕ D V (2.33) (1) V 1 C J 2 ϕ D (2) V C J 2.3 C 0 ϕ D 2.3 2.20 V C J 0.36 V 36 pf 0.80 V 30 pf 2.21 pn C J [F/m 2 ] qεr ε C J = 0 N A N D 2 (N A + N D ) 1 ϕd V (2.34) ε r ε 0 N A N D ϕ D V Si N A = N D = 1.0 10 23 /m 3 V 0.0 V 7.18 pf pn 100 µm 100 µm (1) C J C 0 (2) ϕ D 2 2 189 (9.40)
28 c 2019 2 (3) 0.50 V (4) 5.0 pf (5) pn W d C J C J = ε rε 0 W d (2.35) V 0.0 V 2.22 C 0 5.2 pf ϕ D 0.78 V pn N A N D N (1) pn C J ϕ D C 0 V C J = C 0 ϕd ϕ D V (2.36) C J 2.6 pf V 2 (2) ϕ D k T q n i N D N A ϕ D = kt q ln N AN D n i 2 (2.37) N 2 (3) pn W 2εrε W = 0 (ϕ D V ) NA + N D (2.38) q N A N D ε 0 ε r W 2 (4) pn S C J C J = ε r ε 0 S W (2.39) pn S 2 2.23 pn V V V B [1] V B [2] [1] [3] [4] [3] [1] [5] [4] [1] [6] [3] [7] [8]
c 2019 29 [9] [D] [1] [10] 2.24 2.15 (a) 2.15 (b) I D I D R I V D V R L 0 V B (a) V D (b) 2.15 2.24 (1) 2.15 (a) (2) 2.15 (a) 2 (3) E V E R R L V B (4) E V E R R L V B (5) 2.15 (b) E
30 c 2019 3 3.1 npn V BE I B I C V CE 3.1 h re 0 3.1 3.1 V BE [V] I B [µa] I C [ma] V CE [V] 0.650 10.0 2.50 12.0 0.653 11.0 2.75 12.0 0.650 10.0 2.47 10.0 (1) 3.1 h fe (2) 3.1 h ie (3) 3.1 h oe 3.1 (1) V CE = 12.0 V h fe = I C I B VCE =0 = 2.75 ma 2.50 ma 11.0 µa 10.0 µa = 0.25 ma 1.0 µa = 250 (3.1)
c 2019 31 (2) V CE = 12.0 V h ie = V BE 0.653 V 0.650 V = I B 11.0 µa 10.0 µa = 0.003 V = 3.0 kω (3.2) 1.0 µa VCE =0 (3) I B = 10.0 µa h oe = I C = V CE IB =0 2.50 ma 2.47 ma 12.0 V 10.0 V = 0.03 ma 2.0 V = 15 µs (3.3) 3.2 h h fe = 200, h ie = 5.5 kω, h re = 2.5 10 4, h oe = 10 µs T T (r B, r E, r C, α) h h ie r B + r E 1 α h fe α 1 α r E (3.4) (3.5) h re (1 α) r C (3.6) 1 h oe (1 α) r C (3.7) 3.2 (3.5) (3.6) (3.7) α = h fe h fe + 1 = 200 0.995 (3.8) 201 (3.7) (3.8) r C = (3.4) (3.8) (3.9) r B = h ie r E = h re 2.5 10 4 = = 25 Ω (3.9) h oe 10 µs 1 = h fe + 1 = 201 20 MΩ (3.10) (1 α) h oe h oe 10 µs r E 1 α = h ie h re (h fe + 1) = 5.5 kω 2.5 10 4 201 = 475 Ω (3.11) h oe 10 µs
32 c 2019 3 3.3 3.1 V BE = (4.0 10 3 Ω) I B + 0.600 V (3.12) I C [ma] 8 6 4 2 I B = 30 ma I B = 20 ma I B = 10 ma 0 3 6 9 12 15 V CE [V] 3.1 3.3 (1) (1) V CE 6.0 V I B 20 µa β (2) (1) α 3 (3) (3.5) 2 L nb 20 µm I C R L R B I B V CE V CC V BB V BE 3.2 3.3 (2)
c 2019 33 (4) 3.2 V CC 12.0 V R L 1.5 kω I B 20.0 µa 21.0 µa V BE V BE (5) 3.2 I B 20.0 µa 21.0 µa V CE V CE (6) 3.2 V CE / V BE (7) 3.2 I C(sat) V CE(sat) 0.10 V 3.3 (1) (2) (3) W B = 2 (1 α) L nb = β = I C 4.0 ma = = 200 (3.13) I B 20 µa α = (4) (3.12) (5) (6) β β + 1 = 200 0.995 (3.14) 201 2 2 β + 1 L nb = 20 µm 2.0 µm (3.15) 201 V BE = 4.0 10 3 Ω I B = 4.0 10 3 Ω 1.0 µa = 4.0 mv (3.16) V CE = V CC R L I C = V CC R L βi B (3.17) V CE = R L β I B = 1.5 kω 200 1.0 µa = 0.30 V (3.18) V CE = 0.30 V = 75 (3.19) V BE 4.0 mv
34 c 2019 3 (7) (3.17) I C = I C(sat) V CE = V CE(sat) I C(sat) = V CC V CE(sat) R L = 12.0 V 0.10 V 1.5 kω = 11.9 V 7.9 ma (3.20) 1.5 kω 3.4 β β 0 β = ( ) (3.21) 2 f 1 + (1) β f β f T (2) f f β β f = β 0 f β f β 3.4 (1) f = f T β = 1 1 + β 0 ( ft f β ) 2 = 1 (3.22) (2) f f β f T = ( f 1 + β 0 2 1 f β (3.23) f β ) 2 f f β (3.24) β 0 β = ( f 1 + f β ) 2 β 0f β f (3.25)
c 2019 35 3.5 h oe I C V A V CE 3.5 h oe 3.3 I C = 0 V A 1 h oe = I C V A + V CE I C V A (3.26) I C -V A 0 V CE 3.3 3.5 3.1 (1) npn n (2) (3) (4) (5) (6) npn (7) (8) 1 (9) (10) (11) (12) h 1 48 3.2 215 L.1
36 c 2019 3 (13) h (14) (15) β 1 β (16) pn (17) (18) (19) 0 (20) 3.2 (1) (2) 1 2 (3) 1 2 (4) 1 (5) (6) 0 (7) (8) (9) pn 3.3 3.4 (i) (ii) (iv) (v) n p n p n p (iii) (vi) (a) (b) (c) (d) 3.4 3.3 (1) 3.4 (a) pnp npn (2) 3.4 (c) pnp npn (3) (i) (vi) (4) (i) (vi) (5) (i) (vi)
c 2019 37 3.4 npn npn (a) (b) (c) (a) (b) (d) (d) (e) (d) (f) (g) (h) (d) (g) (i) (d) (j) (d) I E (d) I C (g) (f) I B I E, I C, I B (A) (1) (a) (i) n p (2) (A) 3.5 npn E F (1) (2) (3) 3.6 3.5 3.5 3.6 3.7 3.6 (1) (2) E 1 E 2 )
38 c 2019 3 I 1 A A E 1 V V 1 V V E 2 2 I 2 3.6 3.7 (3) V 1 I 1 V 1 (4) V 2 I 2 V 2 3.8 3.7 I B I C VBB V BE V CE V CC 3.7 3.8 (1) (2) V BE I B V BE (3) V CE I C V CE 3.9 α β 3.10 β = α 1 α (3.27) β 200 (1) α 3 (2) 10 µa 2 (3) 3.0 ma 2 3.11 3.8 (1) 3.8 (2) V CE 10 V I B 20 µa β
I C [ma] 12 9 6 3 c 2019 39 I B = 30mA I B = 20mA I B = 10mA 0 0 2 4 6 8 10 V CE [V] 3.8 3.11 (3) (2) α 3 (4) β f T 1 f T (5) α W L α 1 1 2 ( W L ) 2 (3.28) (3.28) 2 L 20 µm 3.12 3.9 250 I C [ma] 4 3 2 1 0-1 0 1 2 3 4 5 V CB [V] (a) I C [ma] 4 3 2 1 0 0 4 8 12 16 20 V CE [V] (b) 3.9 3.12 (1) 3.9 (a) (2) 3.9 (b) (3) 3.9 (a) (4) 3.9 (b)
40 c 2019 3 3.13 3.10 β R B I B I C R C V BB V BE V CE V CC 3.10 3.13 (1) V CC V BC I C R C (2) I C (3) I B I C (4) I C V CE (5) I B V CE (6) V BE I B V BE h ie 3.14 V CE V BE β 200 3.11 V CC 10.0 V R C 5.00 kω V BE I B [ ( ) ] qvbe I B = I B0 exp 1, I kt B0 = 5.00 10 16 A (3.29) (1) V BE 0.600 V a I B 3 b I C 3 c V CE 3 (2) V CE 9.0 V a I C 3 b I B 3 c V BE 3 (3) V CE 0.10 V
c 2019 41 R B I B I C R C V BB V BE V CE V CC 3.11 3.14 a I C 3 b I B 3 c V BE 3 3.15 3.12 (a) 3.12 (b) R C 2.0 kω V CC 10.0 V I B 5.0 µa I B [A] V BE [V] V BE = (5.0 10 3 Ω) I B + 0.600 V (3.30) I C [ma] 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 V CE [V] (a) I B = 10mA 7.5mA 5.0mA 2.5mA 0.0mA R B I B I C R C V V BB V CE BE (b) V CC 3.12 3.15 (1) 3.12 (a) (2) (1) E F (3) 3.12 (b) V CE V CC R C I C (4) 3.12 (b) I B 5.0 µa V BE (5) 3.12 (b) I B 5.0 µa I C (6) 3.12 (b) I B 5.0 µa V CE (7) 3.12 (b) I B 5.0 µa 5.5 µa V BE V BE
42 c 2019 3 (8) 3.12 (b) I B 5.0 µa 5.5 µa I C I C (9) 3.12 (b) I B 5.0 µa 5.5 µa V CE V CE (10) 3.12 (b) V CE / V BE 3.16 3.13 I r I B r B b I B I C V V D V BE B E V D C E V BE (a) (b) 3.13 3.16 (1) 3.13 (a) I V D q k T I 0 (2) 3.13 (a) V V D I r (3) 3.13 (a) V k T q I 0 r I (4) r D r D = dv di (3.31) 3.13 (a) r D k T q r I I I 0 (5) 3.13 (b) 2 (1) (4) r i I C I B 3.17 3.14 h 3.18 h (1) v BE v CE, i B h (h ie, h fe, h re, h oe) (2) i C v CE, i B h 2 54 3.19
c 2019 43 B C B C h ie h re v CE h fe i B h oe h ie h re v CE h fe i B h oe E B (a) E C E B (b) E C h ie h re v CE h oe h fe i B h ie h re v CE h oe h fe i B E (c) E E (d) E 3.14 3.17 (3) T (r B, r E, r C, α) h h ie r B + r E (3.32) 1 α h fe α (3.33) 1 α r h re E (3.34) (1 α) r C 1 h oe (3.35) (1 α) r C T h (4) h h fe = 200, h ie = 5.5 kω, h re = 2.5 10 4, h oe = 10 µs T 3.19 3.15 (a) h 3.15 (b) h ie = 3.49 kω h fe = 120 h oe = 24.0 µs h re = 2.00 10 4 i B 49.0 µa v CE 5.00 V (1) 3.15 (a) v BE (2) 3.15 (a) i C (3) 3.15 (b) v BE (4) 3.15 (b) i C 3.20 3.16 (a) 3.16 (b) (a)
44 c 2019 3 i B i C i B i C v BE B E h ie h re v CE h fe i B h oe C E v CE v BE B E C h ie h fe i B E v CE (a) h パラメータ等価回路 (b) 簡易等価回路 3.15 3.19 B i B i C C B i B i C C h ie v BE h fe i B v BE h ie h fe i B v CE v CE R L E (a) E E (b) E 3.16 3.20 (1) 3.16 (a) v BE i B (2) 3.16 (a) i C i B (3) 3.16 (b) v CE i C R L (4) 3.16 (b) v CE v BE 3.21 h ie h ie = V BE I B (3.36) (1) T [K] I B I B I B0 exp ( qvbe kt ) (3.37) h ie I B (2) (1) I B 10 µa h ie 3.22 h oe h oe = I C V CE (3.38)
c 2019 45 V A 3 [ ] I C = 1 + V CE I V C0 (3.39) A (1) (3.38) (3.39) h oe (2) I C0 3.0 ma V A 100 V h oe 3.23 3.17 4 3.17 g m r π r o B i B i C C v BE r p g m v BE r O v CE E E 3.17 3.23 (1) 3.17 v BE i B v CE r π r o g m (2) 3.17 i C v BE v CE r π r o g m (3) h 3.17 r π r o g m (4) h q k T β 0 V CE V A 5 I B ( ) qvbe I B = I 0 exp (3.40) kt [ ] I C = β 0 1 + V CE I V B (3.41) A h h ie = V BE I B, h re = V BE V CE, h fe = I C I B, h oe = I C V CE (3.42) 3 48 4 C D 62 3.34 (a) 5 V A 48
46 c 2019 3 (5) (3) (4) 3.17 V A V CE r o = V A + V CE I C g m = qi C kt V A I C (3.43) (3.44) r π = β 0 g m VA + V CE V A β 0 g m (3.45) 3.24 α 0 α f α β 0 β f β α 0 f α = β 0 f β (3.46) β β β = 0 ( ) 2 f 1 + f β (3.47) α 0 0.99 α f α 100 MHz (1) β 0 (2) β f β (3) f 4.6 MHz β 3.25 3.18 3.19 b i B i B r B i C B C v BE r E (1-a) r C v CE E E 3.18 3.25 (1) 3.18 (2) 3.19
c 2019 47 B C r B C BE C E g p C BC g m v BE E E 3.19 3.25 (3) 3.19 C E (4) C BC 3.19 α f α 6 C π C E C BE f α = g m 2πC π (3.48) f α 1.6 GHz g m 50 ms C π 3.26 3.20 (a) 3.20 (b) V CC 9.5 V R L 4.7 kω 2 I C I C [ma] 5 I B = 4 20mA 3 2 1 0 0 2 4 6 8 10 V CE [V] (a) 15mA 10mA 5mA 0mA R B V BB I B V BE (b) V CE R L V CC 3.20 3.26 (1) I C(sat) V CE(sat) 0.10 V (2) I B 3.27 h FE 200 3.21 V CC 10.0 V R C 1.0 kω I B 6 225 (P.7)
48 c 2019 3 I C R C I B V CE V CC 3.21 3.27 (1) V CE(sat) 0.0 V I C(sat) (2) 3.21 I B I C V CE 3.22 I C [ma] 20 15 10 5 0 0 25 50 I B [ma] 75 100 V CE [V] 10 7.5 5.0 2.5 0 0 25 50 I B [ma] 75 100 3.22 3.27 3.28 3.23 I C 0 0 A B V CE 3.23 3.28 (1) 3.23 A 3.24 (a) (c) (2) 3.23 B 3.24 (a) (c) 3.29 1 10
c 2019 49 (a) (b) (c) 3.24 3.28 1 3.25 (a) V in 3.25 (b) V out 3.25 (b) 3.25 (b) (i) 2 (ii) 3 (i) 4 (ii) 5 (ii) 3 β (ii) I B I B > 6 (3.49) 3.25 (a) V in 0 V out 3.25 (b) (iii) 7 7 8 9 7 10 V CC V in R L V 1 0 t V in V out V out (i) (ii) (iii) V CC (a) 0 (b) t 3.25 3.29 V CC βr βv CC L R L R L βv βr L CC V CC
50 c 2019 3 3.30 β 150 3.26 V CE 6.0 V V CC 12.0 V R C 2.0 kω V CC R B R C 3.26 3.30 (1) I C (2) I B (3) I B V BE [ I B = I B0 (4) R B exp ( qvbe kt ) ] 1, I B0 = 1.7 10 15 A (3.50) 3.31 1 3.27 3.27 V CC 10.0 V R C 2.0 kω α 1 R E I E I C R C V BB V BE V CB V CC 3.27 3.31 (1) 3.27 I E pn pn ( ) qvbe I E I E0 exp (3.51) kt I E0 1.0 10 13 A V BE 0.600 V I E 3 (2) V BE 0.600 V V CB
c 2019 51 (3) V BE 0.610 V I E 3 (4) V BE 0.610 V V CB (5) V BE 0.600 V 0.610 V V CB / V BE 3 3.32 3.28 V CC 10.0 V R E 2.00 kω β 199 I B [ ( ) ] qvbe I B = I B0 exp 1, I kt B0 = 1.10 10 15 A (3.52) I B V in V CC VBE R E I E V out 3.28 3.32 (1) V BE 0.598 V a I B b I E c V out d V in (2) I B 14.0 µa a V BE b I E c V out d V in (3) (1) (2) 6.0 V A v A v V in V out A v = V out V in (3.53) 3.33 3.29 ω j
52 c 2019 3 i B B r B i C C g m v B'E v BE v B'E r p C r O p v CE E E 3.29 3.33 (1) v BE r i B r π C π g m r o B (2) v B E r v B r π C π g m r o BE (3) v CE = 0 i C v B E r B r π C π g m r o (4) v CE = 0 i C h i fe r B r π C π g m r o B (5) h fe h FE r B r π C π g m r o (6) h fe = h FE ω β r B r π C π g m r o 2 (7) h fe = 1 ω T r B r π C π g m r o g m r π 1
c 2019 53 4 4.1 MOSFET MOSFET (4.22) (1) g m (2) g D (3) g m (4) I Dsat V P (5) g m V G, V th, I Dsat (6) g D 4.1 (1) (2) g D = I D V DS = g m = I D V G = V DS V G [ [ β V G V th V ] ] DS V DS = βv DS (4.1) 2 [ β [ V G V th V DS 2 ] V DS ] = β (V G V th V DS ) (4.2)
54 c 2019 4 (3) g m = I D V G = [β (V G V th ) 2 ] = β (V G V th ) (4.3) V G 2 (4) V P = V G V th (5) I Dsat = β V P 2 2 (4.4) β = 2I Dsat (V G V th ) 2 (4.5) (6) g m = β (V G V th ) = g D = I D V DS = V DS 2I Dsat V G V th (4.6) [β (V G V th ) 2 ] = 0 (4.7) 2 4.2 n MOSFET W 10 µm L 2.0 µm t 50 nm V th 1.0 V MOSFET µ S 5.0 10 2 m 2 /(V s) (4.11) (4.12) (1) MOSFET C OX (2) (4.11) β (3) V G 1.0 V V P (4) V G 1.0 V V DS 1.0 V I D (5) V G 1.0 V V DS 3.0 V I D (6) V G 3.0 V V P (7) V G 3.0 V V DS 3.0 V I D
c 2019 55 (8) V G 3.0 V V DS 5.0 V I D 4.2 (1) (2) (4.12) (3) C OX = ε OX = 3.95 8.85 10 12 F/m 7.0 10 4 F/m 2 (4.8) t OX 50 nm β = µ SW C OX L = 5.0 10 2 m 2 /(V s) 10 µm 7.0 10 4 F/m 2 2.0 µm = 1.75 10 4 S/V (4.9) (4) V DS < V P [ I D = β V P = V G V th = 1.0 V ( 1.0 V) = 2.0 V (4.10) V G V th V DS 2 = 1.75 10 4 S/V ] V DS [ 1.0 V ( 1.0 V) 1.0 V 2 ] 1.0 V 0.26 ma (4.11) (5) V DS > V P (6) I D = β (V G V th ) 2 = 1.75 10 4 (1.0 V ( 1.0 V))2 S/V 2 2 = 0.35 ma (4.12) (7) V DS < V P V P = V G V th = 3.0 V ( 1.0 V) = 4.0 V (4.13) I D = 1.75 10 4 S/V [ 3.0 V ( 1.0 V) 3.0 V 2 ] 3.0 V 1.3 ma (4.14)
56 c 2019 4 (8) V DS > V P I D = β (V G V th ) 2 = 1.75 10 4 (3.0 V ( 1.0 V))2 S/V 2 2 = 1.4 ma (4.15) 4.3 MOSFET 4.1 MOSFET V DS 8.0 V V DS = 8.0V 5.0 10-2 I D [A 1/2 ] 3.0 10-2 1.0 10-2 0 1.0 2.0 3.0 V G [V] 4.1 4.3 (1) MOSFET V th 2 (2) V G 4.0 V I D (3) V G 2.5 V g m 4.3 (1) I D 0 V G V th 4.1 V th = 0.50 V (4.16) (2) 4.1 V DS 8.0 V V th 0.50 V MOSFET I D = β (V G V th ) 2 2 (4.17)
c 2019 57 4.1 β = 8.0 10 4 S/V (4.18) (3) I D = β (V G V th ) 2 2 g m = I D V G = = 8.0 10 4 S/V (4.0 V 0.50 V)2 2 = 4.9 ma (4.19) [β (V G V th ) 2 ] = β (V G V th ) (4.20) V G 2 g m = 8.0 10 4 S/V (2.5 V 0.50 V) = 1.6 ms (4.21) 4.4 4.2 (a) MOSFET 4.2 (b) 4.2 (b) µ 4.2 (a) G i D D G - r D i D D v G g m v G r D v G mv G + S (a) S S (b) S 4.2 4.0 4.4 4.2 (a) i D = v DS r D + g m v G (4.22) 4.2 (b) i D = v DS + µv G r D (4.23)
58 c 2019 4 2 µ = g m r D (4.24) µv G = r D g m v G = µ = g m r D (4.25) 4.5 n N D 4.0 10 22 /m 3 ϕ D 0.80 V GaAs MESFET V G 0 I D V n GaAs ε r 13 4.5 ϕ D < a2 qn D 2ε (4.26) a > 2εϕ D 2 13 8.85 10 = 12 F/m 080 V qn D 1.60 10 19 C 4.0 10 22 /m 3 0.17 µm (4.27) 4.1 (1) FET (2) FET (3) FET n p (4) n FET (5) FET (6) FET (7) FET (8) n MOSFET (9) p MOSFET (10) MOSFET pn (11) MOSFET (12) p MOSFET p (13) MOSFET
c 2019 59 (14) MOSFET (15) MOSFET (16) MOSFET 0 (17) n MOSFET (18) MOSFET (19) FET (20) FET (21) (22) (23) GaAs MOSFET 4.2 (1) FET (2) FET (3) 0 I D FET (4) 0 I D 0 FET (5) MIS (6) MIS 4.3 MOSFET 1 (1) (2) (3) (4) (5) 4.4 p MOS (A) (J) (1) (10) (A) (B) (C) (D) (E) (B) (F) (G) (E) (H) (I) (J)
60 c 2019 4 4.5 4.3 p MOS V G (A) (B) (C) (B) (i) V G < 0 (ii) 0 < V G < V th (iii) V th < V G 4.3 (1) 4.3 (i) (2) 4.3 (ii) (3) 4.3 (iii) (4) 4.3 (i) A (5) 4.3 (ii),(iii) B (6) 4.3 (iii) C (7) 4.3 (iii) C V th 4.6 4.4 p MOS V G 0 E F M O S E F E F 4.4 4.6 (1) V G (2) V G 4.4 (3) V G (4) V G 4.4 (5) V G (6) V G 4.4 (7) (3) (5) V G
c 2019 61 4.7 n MOSFET I D G V DS I D = (i) (4.28) G W L t σ G = (ii) (4.29) σ q n µ σ = (iii) (4.30) Q t n q Q = (iv) (4.31) (4.30) (4.31) n σ = (v) (4.32) (4.29) (4.32) G = (vi) (4.33) (4.28) (4.33) I D = (vii) (4.34) Q C ox V G V DS V th C ox Q = (viii) (4.35) (4.34) (4.35) MOSFET I D = (ix) (4.36) V DS 0 V DS (4.36) I D 0 V DS (x) I D V DS (x)
62 c 2019 4 (4.36) V DS I D MOSFET ( ) 2 (x) I D = β 2 (1) (i) (x) (2) V th (3) (x) (4) (4.37) β (4.36) (5) (4.36) (6) (4.37) (4.37) 4.8 MOSFET 4.5 (a) (d) 4.6 (e) (h) 4.7 (i) (l) (1) p MOSFET (2) n MOSFET (3) p MOSFET (4) n MOSFET 0 I D (a) V G > 0 V G = 0 V G < 0 V DS 0 I D (b) V G >> 0 V G > 0 V DS V DS V G < 0 V G << 0 (c) 0 I D V DS V G > 0 V G = 0 V G < 0 (d) 0 I D 4.5 4.8 (1) 0 V G I D I D 0 I D (e) V G 0 0 (f) (g) V G I D (h) V G 4.6 4.8 (2) 4.9 4.8 V G V DS n MOSFET
c 2019 63 (i) (j) (k) (k) 4.7 4.8 (3) V DS V DS オフ (A) 領域 (B) 0 V th V G 4.8 4.9 (1) 4.8 (A) (2) 4.8 (B) (3) 4.8 4.10 4.9 (a) MOSFET V G I D 4.9 (a) (i) 4.9 (b) I D (iv) (i) (ii) (iii) 0 (a) V G (b) 4.9 4.10 (1) MOSFET (2) MOSFET n p (3) 4.9 (a) (ii) (4) 4.9 (a) (iii) (5) 4.9 (a) (iv)
64 c 2019 4 4.11 FET 4.10 (a) 4.10 (b) 4.10 (c) (i) V 1 I 2 (iii) (ii) (a) V 2 0 I 2 V3 (b) DI 2 DV 1 V 1 I 2 I 4 0 (A) V 4 (c) (B) V 2 4.10 4.11 (1) 4.10 (a) (i) (iii) (2) 4.10 (b) V 3 (3) 4.10 (b) I 2 V 1 (4) 4.10 (c) (A) (5) 4.10 (c) (B) (6) 4.10 (c) V 4 (7) 4.10 (c) I 4 4.12 4.11 MOSFET β [S/V] (4.38) I D [ I D = β V G V th V DS 2 ] V DS (4.38) 2.0mA I D V DS = 3.0V 2.0mA I D V G = V 0 V V G 0 0 1.0V 0 2.0V V DS 4.11 4.12 (1) MOSFET n p (2) MOSFET (3) MOSFET V th (4) V G V 0 I Dsat
c 2019 65 (5) V G V 0 V P (6) V 0 (7) (4.38) β (8) V G (5) V 0 V DS 1.0 V I D 4.13 4.12 MOSFET I D [ma] 30 25 20 15 10 5 V G = 0.3V V G = 0.0V V G = -0.2V 0 0 1 2 3 4 5 V DS [V] 4.12 (1) MOSFET (2) V G 0.0 V (3) MOSFET V th (4) V G 0.50 V I Dsat 4.14 MOSFET [ I D = β V G V th V ] DS V 2 DS (4.39) n MOSFET β 5.0 ms/v V th 1.0 V MOSFET (1) MOSFET (2) V G 5.0 V V P (3) V G 5.0 V V DS 2.0 V I D (4) V G 5.0 V V DS 8.0 V I D (5) V G 5.1 V V DS 8.0 V I D (6) V G 5.0 V V DS 8.0 V
66 c 2019 4 g m g m = I D V G (4.40) VDS =0 4.15 4.13 n MOSFET (B) I D = β 2 (V G V th ) 2 (4.41) I D [ma] (A) (B) 20 V G = 2.5V 16 12 V G = (C) 8 V G = 2.0V 4 V G = 1.5V 0 0 1 2 3 4 5 V DS [V] 4.13 (1) (A) (2) (B) (3) V G 2.0 V V P (4) MOSFET V th (5) (4.41) β 2 (6) V G 1.75 V V DS 5.0 V I D 2 (7) (C) V G 3 4.16 V DS MOSFET I D = W µcox L [ V G V th V DS 2 ] V DS (4.42) I D V G W µ C ox L 10 µm 2.0 µm 50 nm V th 1.0 V n MOSFET µ S 5.0 10 2 m 2 /(V s) 1 1 µ n
c 2019 67 (1) MOSFET (2) C ox (3) V G 1.0 V V P (4) V G 1.0 V V DS 1.0 V I D (5) V G 1.0 V V DS 3.0 V I D (6) V G 3.0 V V P (7) V G 3.0 V V DS 3.0 V I D (8) V G 3.0 V V DS 5.0 V I D 4.17 MOSFET 4.14 I D [ma] 10 8 6 4 2 V G = 3.5V 0 1 2 3 4 5 6 V DS [V] 4.14 4.17 MOSFET MOSFET [ I D = β V G V th V DS 2 ] V DS (4.43) (1) MOSFET V th 2 (2) MOSFET β 2 (3) V DS 3.0 V 4.0 V 5.0 V 6.0 V I D 4.14 4.18 4.15 MOSFET MOSFET V DS 8.0 V ID (1) MOSFET n p (2) MOSFET (3) MOSFET 4.19 4.16 (a) MOSFET I D MOSFET
68 c 2019 4 3.0 x 10-2 2.0 x 10-2 1.0 x 10-2 I D [A 1/2 ] V DS = 8.0V 0 V G [V] -1.0 0.0 1.0 2.0 4.15 4.18 I [A 1/2 D ] V DS = 10.0V 3.0 x 10-2 2.0 x 10-2 1.0 x 10-2 0 0.0 0.5 1.0 1.5 V G [V] (a) I Dsat 0 I D V G = 2.75V V 0 (b) V DS 4.16 4.19 MOSFET V th β I D = β (V G V th ) 2 2 (4.44) g m g m = I D V G (4.45) (1) MOSFET V th (2) MOSFET β (3) V DS 10.0 V V G 1.75 V MOSFET g m (4) V G 2.75 V MOSFET 4.16 (b) V 0 (5) 4.16 (b) I Dsat 4.20 MOSFET 4.1 (1) MOSFET V th (2) MOSFET β (3) 4.1 (A) (4) 4.1 (B) (5) V G 2.50 V V DS 1.0 V I D
c 2019 69 4.1 4.20 V DS = 4.00 V V G [V] I D [ma] 0.00 0.00 1.00 5.00 (A) 9.80 1.50 20.0 2.00 (B) (6) V G 2.50 V V DS 3.0 V I D 4.21 V DS MOSFET I D V G [ I D = β V G V th V ] DS V 2 DS (4.46) β MOSFET g m g D g m = I D V G (4.47) g D = I D V DS (4.48) (1) (4.46) V th (2) (4.46) (3) (2) g m (4) (2) g D (5) V DS V P I D I Dsat V P (6) (5) I Dsat (7) V P V G V th (8) V P < V DS (9) V P < V DS (10) (9) I Dsat V P (11) (9) g m (4.46) (12) (11) g m V G, V th, I Dsat (13) (9) g D
70 c 2019 4 4.22 MOSFET 4.17 MOSFET I D = β 2 (V G V th ) 2 (4.49) R L I D V DS V DD V G 4.17 4.22 (1) I D V DD V DS R L (2) V G V G0 V DS V DS0 V DS0 V G0 V DD R L β V th (3) V G V G0 + V G V DS V DS0 + V DS V DS V G0 V G V DD R L β V th V G V DS 4.23 MOSFET I D V G V DS I D = g m V G + g D V DS (4.50) g m g D MOSFET V G 1.40 V V DS 4.0 V I D 6.4 ma (1) V DS 4.0 V V G 1.41 V I D 7.1 ma g m (2) V G 1.40 V V DS 10.0 V I D 6.7 ma g D 4.24 MOSFET I D V DS I D 2 λ 2 82
c 2019 71 I D = β 2 (V G V th ) 2 (1 + λv DS ) (4.51) (1) g D g D = (2) g D I D I D V DS (4.52) 4.25 MOSFET 4.18 MOSFET I D = β 2 (V G V th ) 2 (4.53) V DD 30.0 V R D 750 Ω MOSFET V th 0.50 V I D V DS R D V G V DD 4.18 4.25 (1) V DD V DS R D I D (2) V G 1.50 V I D 20 ma (4.53) β (3) V G 1.60 V I D (4) V G 1.50 V V DS (5) V G 1.60 V V DS (6) V G V DS V DS V DS V G 4.26 n MOSFET R D V DD 4.19 V DD 12.0 V V G 0.40 V I D 1.6 ma V DS 10.4 V V G 1.20 V I D 6.4 ma V DS 5.8 V MOSFET
72 c 2019 4 I D R D V DS V DD V G 4.19 4.26 (1) 4.19 MOSFET (2) V DD R D I D V DS (3) R D (4) V th (5) β (6) V G 0.0 V V DS 4.27 4.20 (a) V G V DD V DS V DS0 V DS I D V th β [ I D = β V G V th V DS 2 ] V DS (4.54) I D I D (B) V G = V DD R D V DD (A) V G (a) 回路図 0 V DS0 (b) 電圧電流特性 V DS 4.20 4.27 (1) (4.54) g m g m = I D V G (4.55)
c 2019 73 (2) V G = V DD V DS = 0 g m VDS =0 (3) 4.20 (b) B MOSFET V DS = 0 B g m (4) 4.20 (b) (A) V DS V DD I D R D A (5) A B V DS V DS0 V DS0 4.28 4.21 V DD R D V DS V G 4.21 4.28 (1) V DS I D R D V DD (2) V G V DD V DS0 MOSFET β [S/V] V th [ I D = β V G V th V ] DS V 2 DS (4.56) (3) V DD 5.0 V R D 8.0 kω β 5.0 ms/v V th 1.0 V (2) V DS0 2 (4) V G V DD I DS0 (3) 2 (5) (2) V DS0 V DD R L β (V DD V th ) (4.57) (3) V DS0 2 4.29 4.22 (a) V G V DS 4.22 (b)
74 c 2019 4 I D V DD V DD V DS V G V DS (a) 0 V 1 V 2 (b) 4.22 4.29 V G MOSFET [ β V G V th V ] DS V I D = 2 DS, V DS < V G V th β (4.58) 2 (V G V th ) 2, V DS > V G V th β R L V th V DD V G (1) V G < V 1 V DS = V DD V 1 (2) V 1 < V G < V 2 MOSFET V DS (3) V 2 < V G MOSFET V 2 (4) V 2 < V G V DS 4.30 n p 4.31 FET 4.23 (a) 4.23 (b) FET G S (A) n p D I Dsat I D p (B) V DS 0 V Dsat (a) (b) 4.23 4.31 (1) 4.23 (a) FET FET
c 2019 75 (2) 4.23 (a) FET (3) 4.23 (a) FET (A) (B) (4) 4.23 (a) FET V G (5) 4.23 (b) V DS V Dsat V DS I D I Dsat V DS V Dsat 4.23 (a) (6) FET V G I D 4.32 (1) (2) (3) (4) (5) 4.33 4.24 n 0 E F qf M qc qf S E F E F 4.24 4.33 (1) qϕ M qϕ S (2) n qϕ D (3) qϕ D 4.24 (4) n 4.24 (5) n 4.34 4.25 (1) 4.25
76 c 2019 4 4.25 (2) 4.25 4.26 (a) (b) (c) 4.26 (3) 4.25 4.35 4.27 0 E F qc qf M qf B qf D E F 4.27 4.35 (1) qϕ M (2) qχ (3) qϕ B (4) qϕ D (5) E F (6) E F
c 2019 77 4.36 4.28 (a) (c) n + p n p (a) n + n + n + p (b) n + n + n i (c) 4.28 4.36 (1) FET 4.28 (a) (c) MOSFET, JFET, MESFET (2) GaAs FET (1) 3 FET (3) GaAs FET 1 (4) JFET MESFET (A) 4.37 (J) JFET (A) MESFET (B) FET (C) (D) (E) (F) (G) (H) (D) (I) (I) (J) pn MOS GaAs MESFET
78 c 2019 5 5.1 1200 C 30 SiO 2 0.15 µm 0.30 µm d ox t B d ox = Bt (5.1) 5.1 d ox t d ox 2 t 4 2 5.2 28 2.33 10 3 kg/m 3 SiO 2 60 2.27 10 3 kg/m 3 N A 6.02 10 23 /mol 5.2
c 2019 79 Si N Si SiO 2 Si N SiO2 N Si = 2.33 103 kg/m 3 28 6.02 10 23 /mol N SiO2 = 2.27 103 kg/m 3 60 6.02 10 23 /mol Si 1 2.2 5.01 10 25 /m 3 (5.2) = 2.28 10 25 /m 3 (5.3) 5.01 10 25 /m 3 2.28 10 25 2.2 (5.4) /m3 5.3 (1) d R l w (2) ρ d ρ d ρ s [Ω/ ] 150 Ω/ 100 µm 10 µm 5.3 (1) R = ρ l dw = ρ d l w (5.5) d R l w (2) R = ρ s l 100 µm = 150 Ω/ = 1.5 kω (5.6) w 10 µm
80 c 2019 5 5.1 (1) 1 (2) (3) (4) (5) CZ (6) ULSI VLSI (7) (8) TTL (9) pn (10) (11) (12) MOSFET JFET CMOS (13) CMOS n MOSFET (14) CMOS (15) CMOS (16) CMOS pn 5.2 5.1 5.1 (i) (iii) インゴット ウェーハ (i) 回路作製 チップ パッケージ (ii) (iii) 封入 5.1 5.2
c 2019 81 (1) (2) 1 (3) 5.3 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) 5.4 5.2 (1) (8) (a) (e) 気体 Si Si 加熱 5.2 5.4 (1) SiH 4 + B 2 H 6 [ ] (2) O 2 + Ar [ ] (3) SiH 4 + AsH 3 [ ] (4) SiH 4 + NH 3 [ ] (5) H 2 O + Ar [ ] (6) SiH 4 [ ] (7) SiH 4 + PH 3 [ ] (8) SiH 4 + O 2 [ ]
82 c 2019 5 (a) Si (b) n-si, (c) p-si, (d) SiO 2, (e) Si 3 N 4, 5.5 5.3 (a) (f) CVD イオン化した不純物 基板 O 2 金属 SiO 2 (a) (b) ヒーター シリコン基板 (c) 高融点金属 ドーパント 化学反応 Ar + (d) 基板 基板 (e) 基板 (f) 5.3 5.5 5.6 (1) 3 (2) (3) (4) MOS (5) MOSFET
c 2019 83 5.7 5.4 (i) (ii) (iii) n + p n n + p + p + (vi) (iv) n + (v) 5.4 5.7 (1) (i) (iii) (2) (iv) (3) (v) (4) (vi) (5) (iv) (6) 5.8 5.5 (i) (ix) (1) (2) (3) (4) (5) (6) (7) (8) (9) 5.9 5.6 MOS L 75 µm SiO 2 20 nm
84 c 2019 5 Si SiO 2 金属 (i) p (ii) n + p (iii) n + n p (iv) p + n n p + n n + p (v) n p + n n + n p + n n + p (vi) n p + p n n + n p + n p n + (vii) n + n p + p n n + n p + n p n + (viii) n n + p p + n + n n + n p p + n (ix) n + n p + p n + n p + n n n + p 5.5 5.8 L p + n + n p + p 5.6 5.9
c 2019 85 5.10 ρ d ρ ρs [Ω/ ] 1 5.7 d L 120 µm W 30 µm 160 Ω/ p n W L p p + n p + p d 5.7 5.10 5.11 nmos 5.8 (i) (viii) (1) (2) (3) (4) Si 3 N 4 /SiO 2 (5) (6) (7) (8) 1
86 c 2019 5 Si SiO 2 Si 3 N 4 poly-si 金属 (i) p B (ii) p + p p + (iii) p + p p + B/As (iv) p + p p + (v) p + p p + As (vi) n + n + p + p p + (vii) n + n + p + p p + (viii) n + n + p + p p + 5.8 5.11 5.12 CMOS 2 5.13 5.9 CMOS (1) p MOSFET (i) (ii) (2) (3) (iii)
c 2019 87 (i) (ii) p n + p + n p + p p + p n + p n + p (iii) 5.9 5.13 5.14 CMOS 5.10 (i) (vii) (1) (2) (3) (4) n (5) (6) (7) 5.15 5.10 1 9 5.10 (i) 1 (ii) 2 Si 3 N 4 SiO 2 3 Si 3 N 4 /SiO 2 4 (iii) 5 (iv) 1 6 (v) 2 3 (vi) 1 7 (vii) 8 9 CVD
88 c 2019 5 Si SiO 2 Si 3 N 4 poly-si 金属 P (i) n p B (ii) p p p p n p (iii) p n p p p p B (iv) p n p p p p (v) p n p p p p B/As (vi) n p n+ p+ p+ p p+ p n+ n+ p p (vii) p n+ p+ n p+ p p+ p n+ n+ p p 5.10 5.14
c 2019 89 6 6.1 λ max 1.12 ev 6.1 λ max = hc = 6.63 10 34 J s 3.00 10 8 m/s qe g 1.60 10 19 1.11 µm (6.1) C 1.12 ev 6.2 V o 0.58 V I s 42 ma F F 0.82 P max 6.2 P max = F F V o I s = 0.82 0.58 V 42 ma 20 mw (6.2) 6.3 (1) 650 nm (2) 650 nm
90 c 2019 6 (3) 650 nm 6.3 (1) (2) ν = c λ = 3.00 108 m/s 650 nm 4.62 10 14 Hz (6.3) E = hν = 6.63 10 34 J s 4.62 10 14 Hz = 3.06 10 19 J (6.4) (3) 3.06 10 19 J 1.60 10 19 1.91 ev (6.5) C 6.4 GaAs 1.43 ev GaAs 6.4 λ = hc = 6.63 10 34 J s 3.00 10 8 m/s qe g 1.60 10 19 = 869 nm (6.6) C 1.43 ev 6.5 l 300 µm 0.90 µm n 3.6 (1) (6.17) m (2) (6.17) m 1 λ 6.5
c 2019 91 (1) m = 2ln λ = 2 300 µm 3.6 0.90 µm = 2400 (6.7) (2) m 1 m + 1 = 2ln λ λ (6.8) 1 = 2ln λ λ 2ln λ (6.9) λ = λ 2 0.37 nm (6.10) 2ln + λ 6.1 (1) (2) (3) (4) pin i (5) (6) p (7) (8) (9) CCD MOS (10) CCD (11) (12) (13) (14) (15) 1 (16) (17) 6.2 (1)
92 c 2019 6 (2) (3) (4) 6.3 6.1 (1) (4) (1) (2) (3) (4) 6.1 6.3 6.4 pn 1 6.2 7 6.2 8 2 3 (A) (B) (C) (D) (E) (F) I I I I 0 (G) V 0 (H) V 0 (I) V 0 (J) V 6.2 6.4 pn V I I 0 q k T ] I = I 0 [exp ( qv kt ) 1 (6.11) (6.11) I ph 11 (6.12)
c 2019 93 6.2 I sh 6.2 9 0 12 (6.13) 10 I 0 4 0 5 0 6 (1) 1 6 p n (2) 7 10 A J (3) 11 (4) 12 6.5 CdS 2.50 ev CdS 6.6 (1) λ ν c (2) 1 E p [J] ν h (3) 1 E p [J] λ c h (4) E g [ev] λ max q h c 6.7 1.31 µm (1) 1.31 µm (2) 1.31 µm 1 (3) 1.31 µm 6.8 6.3 pn (1) (2) (A) (B) (3) (A) (B)
94 c 2019 6 A I 0 V B 6.3 6.8 6.9 6.10 λ I ph 6.4 q h c λ [m] E g [ev] P [W] 光電流 I ph I max l max 6.4 6.10 波長 l (1) λ (2) P [W] λ [ [W] [J/s] (3) λ max (4) λ < λ max I ph λ (5) I max 6.11 LED 940 nm 10 mw LED (1) 940 nm 1 (2) LED 1 [ [W]
c 2019 95 [J/s] (3) 100% η LED η 95 % 1 (4) pn 1 1 pn 6.12 pn p n 6.13 6.5 I I sh 0 V op V 6.5 6.13 (1) 6.5 V op (2) 6.5 I sh (3) pn I = I 0 [ ( ) ] qv exp 1 kt (6.14) 6.5 (4) V V op I sh G 0 G 0 J G 0 I = J G 0 V (5) 6.14 6.6 R 20 ma I I sh 25 ma V op 0.56 V
96 c 2019 6 V I [ ( ) ] qv I = I sh I 0 exp 1 kt (6.15) I R V 6.6 6.14 (1) (6.15) I 0 (2) V (3) R 6.15 6.7 R 25 Ω V SW V 0.56 V SW V 0.50 V ( ) ] qv I = I sh I 0 [exp 1 (6.16) kt SW V R 6.7 6.15 (1) SW (2) I sh q k T I 0 V op (3) q k T I 0 V op I sh (4) (6.16) I 0 (5) I sh 6.16 6.8 V op 0.500 V I sh 250 ma R R 100 mw (1) F F
c 2019 97 R V 6.8 6.16 (2) 200 ma ( ) ] qv I = I sh I 0 [exp 1 (6.17) kt 6.17 V I 6.1 6.1 6.17 V [V] I [ma] 0.100 500 0.300 500 0.400 490 0.420 478 0.440 451 0.460 395 0.480 272 0.490 165 0.500 0.00 (1) V op 3 (2) I sh 3 (3) P max 3 (4) F F 3 6.18 CCD 6.9 CCD (1) 6.9 A A
98 c 2019 6 V 3 V 2 V 1 A A' 6.9 6.18 V 1 V 2 V 3 (a) (b) (c) (d) (e) (f) (a) 6.10 6.18 (2) CCD 6.10 (a) (f) V 1 V 2 V 3 6.9 6.10 (a) (f) (3) CCD (4) CCD (5) CCD DRAM 6.19 6.11 CCD X, Y, Z A, B, C 6.20 6.21 In 0.2 Ga 0.8 N 2.67 ev In 0.2 Ga 0.8 N
c 2019 99 V 1 A V 1 V 2 V 3 V 2 B V1 V 2 V 3 V 3 V C V 3 V 2 1 X Y Z 6.11 6.19 6.22 λ 600 nm E g 6.23 6.2 (LED) (LD) 2 6.2 6.23 LED LD 6.24 (LD) (A) (J)
100 c 2019 6 (A) (B) (C) (D) (D) (E) (D) (F) (F) 1 (B) (B) (G) (H) (I) (J) MOS 6.25 6.12 禁制帯 p AlGaAs p GaAs n AlGaAs 6.12 6.25 (1) (2) (1) (3) (2) 6.26 (A) (B) (A) (B) (C) (D) (C) (D)
c 2019 101 7 7.1 1 7.1 4 1 1 4 7.2 7.1 DRAM a b C C S 7.1 7.0 (1) C S V S a V DD 2 a V a C
102 c 2019 7 (2) C S 100 ff C/C S 10 V S V DD (3.3 V) (1) V 7.2 (1) C S V S + C V DD 2 = (C S + C) V (7.1) C S V S + 1 V = 2 CV DD C S + C (7.2) (2) (1) V S = V DD C S V = 1 + C 2C S 1 + C V DD = 6 11 C S 3.3 V = 1.8 V (7.3) 7.3 5 MeV α DRAM 1.4 10 6 0.50 V DRAM C S 7.3 α 1.4 10 6 1.60 10 19 C = 2.24 10 13 C (7.4) 0.50 V C S = 2.24 10 13 C 0.50 V = 4.48 10 13 F 0.45 pf (7.5) 7.4 7.2 DRAM C Sp
c 2019 103 DRAM C St C St /C Sp k DRAM a a a a C sp ka C st 7.2 7.0 7.4 C OX C Sp = C OX a 2 (7.6) C St = C OX ( a 2 + 4 ka 2) (7.7) C St C Sp = 4k + 1 (7.8) 7.5 EPROM SiO 2 3.0 ev 7.5 λ max = hc = 6.63 10 34 J s 3.00 10 8 m/s qe g 1.60 10 19 = 415 nm (7.9) C 3.0 ev 7.1
104 c 2019 7 (1) SRAM (2) DRAM (3) DRAM SRAM (4) DRAM (5) (6) ROM (7) ROM (8) EPROM (9) EEPROM (10) ROM (11) (12) (13) 7.2 (1) (8) (1) (2) (1) (3) (1) (4) (5) (4) (6) (4) (7) (4) (8) (7) EEPROM ROM SRAM DRAM ROM EPROM RAM 7.3 7.3 2 CMOS NOT CMOS SRAM 6 NOT V DD V DD 7.3 7.3
c 2019 105 7.4 1 8 A I 7.4 1 V DD A 2 B C 3 MOSFET Q 1 MOSFET Q 2 4 Q 3 5 Q 4 6 A B 7 C 8 A V DD Q 1 Q 3 Q 2 Q 4 B C 7.4 7.4 (A) (B) SRAM (C) (D) (E) (F) (G) (H) (I) ROM 7.5 7.5 V DD (1) (2) (3) A (4) B C (5) MOSFET Q 1 MOSFET Q 2 Q 4 (6) (5) B C MOSFET 0 7.6 1 10 (A) (Q)
106 c 2019 7 A V DD Q 1 Q 3 Q 2 Q 4 B C 7.5 7.5 DRAM 1 DRAM 2 3 1 4 5 DRAM α 6 1 7 DRAM MOS 1 8 1 9 1 7 10 2 7.7 DRAM V DD a b C C S 7.6 7.7 (1) 7.6 DRAM a b
c 2019 107 (2) DRAM 7.6 a V DD 2 (3) C S V S a V V a C (4) V S V DD 3.3 V C C S 10 (3) V (5) V S 0.15 V V DD 3.3 V C C S 14 (3) V (6) DRAM α (7) DRAM α C S α 1.4 10 6 C S 100 ff (8) DRAM 7.7 (a) (c) n + n + p (a) n + n + p (b) 7.7 7.7 n + n + p (c) (9) 7.8 DRAM (1) DRAM 1 5.0 V C S 100 ff 25 pa (2) DRAM (1) 7.9 DRAM 7.10 DRAM
108 c 2019 7 7.11 7.8 ROM W V B1 V B2 FET M 1 FET R L FET M 2 R D V DD V DD M 1 W M 2 B 1 B 2 7.8 7.11 7.12 ROM 3 7.13 7.9 EPROM SiO 2 SiO 2 n + p n + (A) (B) 7.9 7.13 (1) (A) (B) (2) EPROM (A) (B) 7.9 (A) (B) (C) (J) EPROM (A) (C) (D) (B) (B) (E) (A) MOSFET (F) (A) (B) (E) (G)
c 2019 109 (B) (H) (I) (B) (J) α (3) EPROM 7.14 7.10 (a) V G Q F Q I 7.10 (b) 7.10 (b) C U C D C U V U C D V D C U Q U C D Q D V G 制御ゲート フローティング ゲート C U V U Q F n + C D V D n + n + Q I (a) (b) 7.10 7.14 (1) V G V U V D (2) V U Q U C U (3) V D Q D C D (4) Q U Q D Q F (5) Q D Q I (6) Q I V G C U C D Q F (7) Q F 0 Q I Q I0 Q F 0 Q I Q I0 V G + V G V G V G C U C D Q F (8) V G 3.3 V C U 2.6 ff C D 1.2 ff (7) V 0.50 V Q F (9) (8)
110 c 2019 7 7.15 EPROM Si SiO 2 3.0 ev 7.16 EEPROM (A) (F) 7.11 EEPROM EEPROM (A) (A) (B) (C) (D) (E) (A) (B) (C) (D) (E) (A) (A) (F) (A) (B) n + n + SiO 2 7.11 7.16 7.17 EEPROM (1) EEPROM (2) 7.12 EEPROM n + n + SiO 2 7.12 7.17 (3) 7.12 EEPROM (4) EEPROM 7.12 MNOS MNOS
c 2019 111 (5) MNOS EEPROM 7.18 1 8 (a) (n) 1 2 1 7.13 (a) FET V SS B 3 2 7.13 (b) FET 3 FET 4 5 1 6 2 5 FET 7 8 W W V SS B B V SS B V SS B (a) (b) 7.13 7.18 (a) (b) (c) (d) NAND (e) (f) NOR (g) (h) (i) (j) NOR (k) (l) NAND (m) (n)
112 c 2019 8 8.1 HEMT 8.1 8.2 8.2 8.3 (1) (2) (3) HEMT (4)
c 2019 113 2 8.3 (1) (2) (3) 2 (4) 8.4 166 (8.5) SIT 83 (4.16) (4.17) SIT g m g D 8.4 ( ) g m = d I 0 exp qη ( ) V G + V DS µ = qη dv G kt kt I 0 exp qη V G + V DS µ = qηi D kt kt g D = d dv DS (8.1) ( ) I 0 exp qη ( ) V G + V DS µ = qη kt µkt I 0 exp qη V G + V DS µ = qηi D kt µkt (8.2) 8.5 v sat 10 5 m/s f 50 GHz l 8.5 170 (8.6) l v sat 2f = 105 m/s = 1 µm (8.3) 2 50 GHz 8.6 8.1 8.1
114 c 2019 8 β 1 β 2 C B b 1 b 2 E 8.1 8.0 8.6 8.2 I C2 C I B2 B b 1 b 2 I C1 I E1 = I B2 E 8.2 I C1 = β 1 I B1 (8.4) I C2 = β 2 I B2 (8.5) I B2 = I E1 = I C1 + I B1 = (β 1 + 1) I B1 (8.6) I C1 + I C2 = β 1 I B1 + β 2 I B2 = β 1 I B1 + β 2 (β 1 + 1) I B1 = (β 1 β 2 + β 1 + β 2 ) I B1 (8.7) I C1 + I C2 I B1 = β 1 β 2 + β 1 + β 2 (8.8) 8.7
c 2019 115 8.3 1 p r B1 2 p r B2 V P I E V E V BB I E E p B 1 n B 2 E B 2 B 1 0 V P V E (a) 構造 (b) 図記号 8.3 8.0 (c) 特性 8.7 I E 1 p V E V E = r B1V BB r B1 + r B2 (8.9) V E pn V E = V E V E V P V P = r B1V BB r B1 + r B2 (8.10) 8.1 8.4 v i 1 i 2 v i 1 i 2 0 v G v G 8.4 8.1
116 c 2019 9 9.1 183 9.1 l 2.0 cm w 2.0 mm d 0.50 mm V x 25 mv x I x 1.0 ma 0.20 T B z V y 25 µv (1) (2) (3) (4) 9.1 (1) R H = wv y 2.0 mm ( 25 µv) = B z I x 0.20 T 1.0 ma = 2.5 10 4 m 3 /C (9.1) (2) R H < 0 n n = (3) x R x 1 q R H = 1 1.6 10 19 C 2.5 10 4 m 3 /C = 2.5 1022 /m 3 (9.2) R x = V x 25 mv = = 25 Ω (9.3) I x 1.0 ma
c 2019 117 (4) σ σ = l R x wd = 2.0 cm 25 Ω 2.0 mm 0.50 mm = 8.0 102 S/m (9.4) σ = qµn = µ R H (9.5) µ = σ R H = 8.0 10 2 S/m 2.5 10 4 m 3 /C = 0.20 m 2 /(V s) (9.6) 9.2 N D 1.0 10 26 /m 3 N A 1.0 10 24 /m 3 pn 300 K ϕ D 9.2 189 (9.40) ϕ D = kt q ln N DN A n i 2 = 1.38 10 23 J/K 300 K 1.60 10 19 C ln 1.0 1026 /m 3 1.0 10 24 m 3 ( 1.5 10 16 /m 3) 2 = 1.05 V (9.7) 9.3 9.1 n n (1) N D (2) 190 (9.42) E g (3) (4) 190 (9.41) E D [ev] (5) 9.3
118 c 2019 9 9.1 9.0 T [K] n [/m 3 ] 30 1.55 10 19 40 1.36 10 20 273 1.00 10 21 373 1.00 10 21 800 2.86 10 21 900 7.52 10 21 (1) T 273 K 373 K N D = n = 1.00 10 21 /m 3 (9.8) (2) T 800 K 900 K ( n = N 0 exp qe ) g 2kT (9.9) ( 2.86 10 21 = N 0 exp qe ) g 1600k ( 7.52 10 21 = N 0 exp qe ) g 1800k 2.86 10 21 ( ( qeg 1 = exp 7.52 1021 k 1800 1 )) 1600 (9.10) (9.11) (9.12) (3) (9.9) N 0 N 0 = n exp k E g = q ( 7.52 1021 1 1600 1 ) ln = 1.20 ev (9.13) 2.86 1021 1800 ( ) ( qeg 1.60 10 = 2.86 10 21 /m 3 19 ) C 1.20 ev exp 2kT 2 1.38 10 23 J/K 800 K = 1.71 10 25 /m 3 (9.14) ( N 0 exp qe ) g = N D (9.15) 2kT
c 2019 119 qe g T = 2k ln N = 714 K (9.16) 0 N D (4) T 30 K 40 K ( n = N F exp qe ) D 2kT (9.17) (2) (5) (9.17) N F N F = n exp k E D = q ( 1.36 1020 1 60 1 ) ln = 0.045 ev = 45 mev (9.18) 1.55 1019 80 ( ) ( qed 1.60 10 = 1.55 10 19 /m 3 19 ) C 45 mev exp 2kT 2 1.38 10 23 J/K 30 K = 9.26 10 22 /m 3 (9.19) (3) qe D T = 2k ln N = 57.6 K (9.20) F N D 9.4 300 K 1.7 10 31 kg 9.4 192 (9.51) τ = µm q = 0.15 m2 /(V s) 1.7 10 31 kg 1.6 10 19 C = 1.6 10 13 s (9.21) 9.5 S L x 196
120 c 2019 9 (9.71) G p n t = G n n 0 τ n (9.22) p t = G p p 0 τ p (9.23) (1) n(= n n 0 ) (2) σ (3) V I L (4) Q (5) I L Q g (6) t n (7) t p (8) g τ n τ p t n t p (9) t 0 t > 0 σ(t) 9.5 (1) 0 n t = 0 (2) p (1) G n n 0 = 0 τ n (9.24) n = n n 0 = Gτ n (9.25) p = Gτ p (9.26) σ σ = q ( µ n n + µ p p ) = qg ( µ n τ n + µ p τ p ) (9.27) (3) R R = 1 σ l S (9.28)
c 2019 121 I I = V R = σsv l (9.29) I L = σsv l = qg ( µ n τ n + µ p τ p ) V S l (9.30) (4) Sl G (5) q Q = qgsl (9.31) g = I L Q = qg ( ) ( ) µn τ n + µ p τ p V S 1 l qgsl = µn τ n + µ p τ p V l 2 (9.32) (6) v n v n = µ n V l (9.33) t n t n = l = l2 v n µ n V (9.34) (7) (6) t p = l = l2 v p µ p V (9.35) (8) g = ( µn τ n + µ p τ p ) V l 2 = µ nτ n V l 2 + µ pτ p V l 2 = τ n t n + τ p t p (9.36) (9) t > 0 n d( n) dt = d(n n 0) dt = dn dt = n n 0 = n (9.37) τ n τ n t = 0 n = Gτ n ( n = Gτ n exp t ) τ n (9.38)
122 c 2019 9 t > 0 p ( p = Gτ p exp t ) τ p σ(t) σ(t) = q ( µ n n + µ p p ) [ ( = qg µ n τ n exp t ) ( + µ p τ p exp t )] τ n τ p (9.39) (9.40) 9.6 (1) K 1 K 2 ( x n(x) = K 1 exp L n 196 (9.73) (2) n(0) = N 0 n(w ) = 0 n(x) ) ) + K 2 exp ( xln + n 0 (9.41) (3) (2) npn [ n(x) N 0 1 x ] W B (9.42) 1 x 1 exp x 1 + x 9.6 (1) [ ( ) ) ] x K 1 exp + K 2 exp ( xln + n 0 = K ( ) 1 x exp K ) 2 exp ( xln x L n L n L n L n (9.43) [ ( ) K1 x exp K )] 2 exp ( xln = K 1 x L n L n L n ( x 2 L exp n L n = 1 L n 2 [ K 1 exp ) + K 2 ( x L n ) 2 ( L exp xln n ) + K 2 exp ( xln )] = 1 L n 2 (n n 0) (9.44)
c 2019 123 L n 2 = D n τ n (9.45) D n 2 n x 2 n n 0 τ n = 0 (9.46) (2) n(0) = K 1 + K 2 + n 0 = N 0 (9.47) ( ) ) W n(w ) = K 1 exp + K 2 exp ( WLn + n 0 = 0 (9.48) L n K 1 K 2 ) (N 0 n 0 ) exp ( W + n Ln 0 K 1 = ( ) ) (9.49) exp W exp ( W Ln Ln ( ) (N 0 n 0 ) exp W + n Ln 0 K 2 = ( ) ) (9.50) exp W exp ( W Ln Ln ) (N 0 n 0 ) exp ( W + n ( ) Ln 0 x n(x) = ( ) ) exp exp W exp ( W L n Ln Ln ( ) (N 0 n 0 ) exp W + n ) Ln 0 + ( ) ) exp ( exp W exp ( xln + n 0 W Ln Ln = (N 0 n 0 ) exp [(W x) /L n] exp [(x W /L n ] exp ( ) ( ) W/L n exp W/Ln [1 exp ( ) ( ) ] (9.51) x/l n exp x/ln + n 0 exp ( W/L n ) exp ( W/Ln ) (3) W W B x < W L n ( ) W exp 1 + W ), exp ( WLn 1 W (9.52) L n L n L n ( ) W x exp 1 + W x ( ) x W, exp 1 + x W (9.53) L n L n L n L n
124 c 2019 9 n(x) (N 0 n 0 ) = (N 0 n 0 ) 1 + W x L n 1 + W L n 2(W x) L n 2W [ = (N 0 n 0 ) 1 x W L n + n 0 ( ) 1 + x W L n ) + n 0 (1 W Ln [ 1 ] + n 0 [ 1 x W 2x L n 2W L n ] ] = N 0 [ 1 x W ) 1 + x L n (1 x Ln 1 ) 1 + W L n (1 W Ln ] (9.54) 9.1 N D n n T 9.1 1/T log n log n (A) (B) (C) 9.1 9.1 1/T (1) (A) (C) (2) (A) (C) (3) (A) (4) (A) exp( qe g/2kt ) E g [ev] q k (A) 6.0 10 3 E g (5) (B) (6) (B) (7) (C)
c 2019 125 9.2 n p E c E v E F ( n = N c exp E ) c E F kt ( p = N v exp E ) F E v kt (9.55) (9.56) k T N c N v (1) n i E g (2) E Fi (3) N D n E Fn (4) N A p E Fp (5) (3) (4) pn V D N D N A n i 9.3 N D n n p n p N D n = [i] (9.57) p n n i pn = [ii] (9.58) n [iii] (9.59) n n = [iv] (9.60) N D n i 1 n [v] (9.61) N D n i 2 n [vi] (9.62) 1 2
126 c 2019 9 9.4 pn l x [i] [xiii] pn Q(x) x < 0 N D n x > 0 N A p Q(x) = { [i] ( ln < x < 0) [ii] (0 < x < l p ) (9.63) l n n l p p ϕ(x) q ε d 2 ϕ dx 2 = Q ε { [iii] ( ln < x < 0) [iv] (0 < x < l p) (9.64) (9.64) x E = dϕ dx x = l n x = l p 0 { dϕ [v] ( ln dx = < x < 0) [vi] (0 < x < l p ) (9.65) E x = 0 (9.65) l n l p = [vii] (9.66) (9.65) x x = 0 ϕ = 0 ϕ(x) = { [viii] ( ln < x < 0) [ix] (0 < x < l p ) (9.67) pn V D V D = ϕ( l n) ϕ(l p) = [x] (9.68) (9.66) l n = [xi] (9.69) l p = [xii] (9.70) l l = [xiii] (9.71) V D = kt q ln N AN D n i 2 (9.72)
c 2019 127 9.5 9.2 l w d x V x I x z B z y V y z y x V y - V + B z w d l A I x V x 9.2 9.5 (1) (2) [i] [ix] R H n x v x (< 0) B y F B = [i] y y y V y (< 0) V y E y E y = [ii] F y F B [iii] V y V y = [iv] x J x q(> 0) n v x J x = [v] J x I x J x = [vi] [v] [vi] I x = [vii] [iv] [vii] v x V y = [viii] R H = 1 qn R H = [ix] I x B V y R H n σ q n µ σ = [x] σ R H µ = [xi] µ (3) R H (4) n p
128 c 2019 9 (5) σ (6) µ 9.6 [i] [vii] m q(> 0) E v [i] 3 4 τ τ mv E [ii] [iii] v d [iv] n J q, n, v d [v] v d [vi] J = σe σ [vii] 9.7 R H n µ n p µ p q V y 9.2 l w d x V x I x z B z (1) x E x V x l w d (2) y E y V y l w d (3) I x q l w d n p µ n µ p V x (4) R H R H = wv y B z I x (9.73) R H q E x E y B z n p µ n µ p (5) x (6) y q E x E y B z µ n (7) x (8) y q E x E y B z µ n (9) m dv dt = F m τ v (9.74) 3 4
c 2019 129 5 µ τ µ = qτ m (9.75) 6 F v q µ F (10) (6) (8) (9) y v yn v yp (11) 7 (10) y (12) y y 0 (11) E y (13) (4) (12) R H q n p µ n µ p 9.8 (1) [i] [viii] x x x + x p x yz D p p/ x [i] x x + x [ii] [i] [ii] x x + x [iii] E µ p [iv] E [v] p 0 τ p [vi] [vii] (9.76) n [viii] (9.77) (9.76) (9.77) (2) 5 191 (9.45) 6 192 (9.51) 7 14 (1.25)
130 c 2019 9 (3) p(= p p 0 ) t p t=0 = p 0 p (4) 8 0 (5) p x p x=0 = p 0 p x= = 0 0 p D p τ p = L p 9 (6) (7) V p q k T ( ) qv p = p 0 exp kt (9.78) E V = Ex (6) D p µ p 10 9.9 npn 0.640 V N B 5.0 10 23 /m 3 W B 0.50 µm (1) n B0 (2) V BE n B 29 2.10 ( ) qvbe n B0 exp kt (9.79) 0.640 V n B (3) (4) D Bn 4.0 10 3 m 3 /s (5) (6) 20 µm 30 µm 8 9 L p 10
c 2019 131 A 3 300 K q 1.60 10 19 C ε 0 8.85 10 12 F/m k 1.38 10 23 J/K h 6.63 10 34 J s c 3.00 10 8 m/s Si N Si 5.0 10 28 /m 3 Si n i 1.5 10 16 /m 3 Si E g 1.12 ev 300 K) Si µ n 0.15 m 2 /(V s) Si µ p 0.050 m 2 /(V s) Si ε r 11.8 SiO 2 ε ox 3.95
132 c 2019 B 1.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) 1.2. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) 1.3. 1.4. [1] 4, [2], [3] 5, [4], [5], [6], [7], [8], [9] n, [10] 3, [11], [12] [13] p, [14], [15] 1.5. 1 2 3 4 5 6 7 8 9 10 1.6. (a) (d) (b) (c) 1.7. (b) n (c) p (a) 1.8. (c) (a) (b) 1.9. (i) vµe (ii) nvs (iii) qn (iv) qnvs (v) qnµes (vi) V l (vii) qnµs l (viii) V I (ix) l σs (x) qnµ 1.10. (1) ρl/s (2) V/l (3) I/S (4) E = ρj (5) Snv (6) qsnv (7) qnv (8) µe (9) ρ = 1/(qµn) 1.11. µ n = 1.5 10 3 cm 2 /(V s) µ p = 5.0 10 2 cm 2 /(V s) 1.12. 0.25 V 1.13. (1) 4.14 10 21 J (2) 25.9 mev 1.14. (1) 2.0 10 29 /m 3 (2) 7.5 10 14 (3) 4.8 10 4 S/m (4) 2.1 10 3 Ω m 1.15. (1) q ( µ n + µ p ) ni (2) 2q µ n µ p n i (3) 4.80 10 4 S/m (4) 4.16 10 4 S/m 1.16. (1) 12 kv/m (2) 1.9 (3) 1.8 km/s (4) 0.60 km/s 1.17. (1) 2.0 10 4 m/s (2) 50 V 1.18. (1) 1.8 10 6 (2) 9.0 10 22 /m 3 (3) 2.5 10 9 /m 3 (4) 2.2 10 3 S/m (5) 4.6 10 4 Ω m
1.19. (1) 16 S/m (2) 2.5 10 20 /m 3 c 2019 133 1.20. (1) n (2) 1.2 10 3 S/m (3) 5.0 10 22 /m 3 (4) 4.5 10 9 /m 3 1.21. (1) 0.050 m 2 /(V s) (2) 0.31 Ω m (3) 3.2 S/m (4) 4.0 10 20 /m 3 1.22. (1) 20 kω (2) 1.85 ks/m (3) 0.46 m 2 /(V s) (4) 23 km/s 1.23. 0.80 m 2 /(V s) 1.24. (1) 0.45 m 2 /(V s) (2) 1.5 10 13 /m 3 (3) 0.05 m 2 /(V s) 2.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) 2.2. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) 2.3. (1) A: K: (2) K (3) (4) (4) 2.3 (a) 2.4. (1) [1] [2] p [3] n [4] [5] [6] [7] (2) (3) C 2.5. (1) 2.7 (a) (2) (3) (4) 2.7 (b) 2.6. (1) p (2) (3) 2.7 (b) (4) 2.8 2.7. (1) p.25 2.7 (b) (2) p.26 2.8 (3) (4) (5) (6) 2.8. (1) 1.62 (2) 0.679 2.9. (1) V = RI + V D (3) V D = 0.80 V I = 20 ma 2.10. (1) 24 mw (2) 3.4 pa (3) 1.42 V 2.11. (1) 25.0 µa (2) 0.620 V (3) 4.62 V (4) 0.269 ma (5) 0.244 ma (6) 18.9 kω 2.12. (1) 1.47 (2) 0.560 V 2.13. (1) 3.4 10 13 A (2) 7.4 10 12 A (3) 17 ma (4) 4.7 10 15 A (5) 0.55 ma 2.14. (1) V 0 = 0.674 V R 0 = 2.00 Ω (2) 2.30 10 14 A (3) 4.70 ma 2.15. 1.5 V 2.16. (1) (2) (3) (4) (4) 2.50 10 22 /m 3 (5) 9.00 10 9 /m 3 (6) 1.06 10 20 /m 3 (7) 2.51 10 22 /m 3 2.17. (1) J (x) = q D [ ( ) ] p qv ( L p 0 exp 1 exp x ) (2) q D [ ( ) ] p qv kt L L p 0 exp 1 (3) kt
134 c 2019 B 2.18. [1] [2] [3] [4] [5] 2.19. (1) 0.932 V 0.456 V (2) 3.45 µm 49.3 nm 2.20. (2) C 0 = 45 pf ϕ D = 0.64 V 2.21. (1) 7.18 10 4 F/m 2 (2) 0.81 V (3) 5.7 pf (4) 1.1 V (5) 0.15 µm 2.22. (1) 2.34 V (2) 5.3 10 22 /m 3 (3) 0.20 µm (4) 9.8 10 9 m 2 2.23. [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] 2.24. (1) ) (2) (3) R L E (4) V B (5) E (1 + RRL V B R + R L 3.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17) (18) (19) (20) 3.2. (1) (2) α (3) β (4) (5) (6) (7) (8) (9) 3.3. (1) pnp (2) npn (3) (iii) (vi) (4) (ii) (iv) (5) (i) (v) 3.4. (1) (a) n (b) p (c) (d) (e) (f) (g) (h) (i) (j) (2) I E = I B + I C 3.5. (1) 3.7 (a) (2) 3.7 (b) (3) 3.41 (a) 3.7. (1) (2) E 2 3.8. (1) 3.10. (1) 0.995 (2) 2.0 ma (3) 15 µa 3.11. (1) 3.9 (2) 300 (3) 0.997 (4) (5) 1.6 µm 3.12. (1) (2) (3) 3.0 ma (4) 8.0 µa 3.13. (1) V CE = V CC R C I C (2) I C = βi B (3) I C = β I B (4) V CE = R C I C (5) V CE = R C β I B (6) R Cβ h ie 3.14. (1)(a) 5.88 µa (b) 1.18 ma (c) 4.12 V (2)(a) 0.200 ma (b) 1.00 µa (c) 0.554 V (3)(a) 1.98 ma (b) 9.90 µa (c) 0.613 V 3.15. (1) (2) 3.7 (a) (3) V CE = V CC R C I C (4) 0.625 V (5) 1.0 ma [ (6) ( 8.0 ) V (7) ] 2.5 mv (8) 0.10 ma (9) 0.20 V (10) 80 [ ] 3.16. (1) I = I 0 exp qvd kt 1 (2) V = ri + V D (3) V = ri + kt q ln I I 0 + 1 (4) r D = r + kt qi (5) r i = r B + kt qi B 3.17. b 3.18. (1) v BE = h ie i B +h re v CE (2) i C = h fe i B +h oe v CE (3) r E = h re /h oe, r C = (h fe +1)/h oe,
c 2019 135 r B = (h ie h oe h re (h fe + 1))/h oe, α = h fe /(h fe + 1) (4) r B = 475 Ω, r E = 25 Ω, r C = 20 MΩ, α = 0.995 3.19. (1) 0.172 V (2) 6.00 ma (3) 0.171 V (4) 5.88 ma 3.20. (1) v BE = h ie i B (2) i C = h fe i B (3) v CE = R L i C (4) h fer L h ie 3.21. (1) kt qi B (2) 2.6 kω 3.22. (1) I C0 V A (2) 30 µs 3.23. (1) v BE = r π i B (2) i C = g m v BE + v CE [ r o 1 + V CE V A (4) h ie = kt, h re = 0, h fe = β 0 qi B 3.24. (1) 99 (2) 1.0 MHz (3) 21 (3) h ie = r π, h re = 0, h fe = g m r π, h oe = 1 ] r o, h oe = β 0I B V A 3.25. (1) T (2) π (3) (4) 5.0 pf 3.26. (1) 2.0 ma (2) 10 µa 3.27. (1) 10 ma 3.28. (1) iii (2) i 3.29. 1 2 3 4 5 6 V CC βr L 7 8 9 10 3.30. (1) 3.0 ma (2) 20 µa (3) 0.60 V (4) 0.57 MΩ 3.31. (1) 1.18 ma (2) 7.65 V (3) 1.73 ma (4) 6.54 V (5) 110 3.32. (1)(a) 12.0 µa (b) 2.40 ma (c) 4.79 V (d) 5.39 V (2)(a) 0.602 V (b) 2.80 ma (c) 5.60 V (d) 6.20 V (3) 0.997 r π r π g m r π 3.33. (1) r B + (2) (3) g m v B 1 + j ωc π r π r B + r π + j ωc π r B r E (4) (5) g m r π π 1 + j ωc π r π 1 (6) (7) g m C π r π C π 4.1. (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17) (18) (19) (20) (21) (22) (23) 4.2. (1) (Field Effect Transistor) (2) (3) (4) (5) (6) 4.3. (5) 4.4. (A) (B) (C) (D) (E) (F) (G) (H) (I) (J) 4.5. (1) (2) (3) (4) (5) (6) (7) 4.6. (1) (2) 4.4 (b) (3) (4) 4.5 (c) (5) (6) 4.5 (d) (7) 4.7. (1-i) GV DS, (1-ii) σw t L, (1-iii) qµn, (1-iv) qnt, (1-v) µq t, (1-vi) µqw L, (1-vii)