ELECTRONIC IMAGING IN ASTRONOMY Detectors and Instrumentation 5 Instrumentation and detectors

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ELECTRONIC IMAGING IN ASTRONOMY Detectors and Instrumentation 5 Instrumentation and detectors 4 2017/5/10

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 2 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 3 / 35

5.4.1 FTS Michelson ( ) x = 2(x b x a ) k x = 2π λ x ( ) output ( ) k T (k, x) = 1 2 [1 + cos(k x)](?) Fig 1: Mclean ( 4 ) Mclean 2017/5/10 4 / 35

5.4.1 T (k, x) E(t) = E 0 exp (iωt), E(t) 2 = E 0 2 Beam Splitter A,B E A + E B E A + E B = 1 2 E 0 exp (iωt) + 1 2 E 0 exp (iωt + ik x) = 1 2 E 0 exp (iωt)(1 + exp (ik x)) E A + E B 2 = 1 4 E 0 2 (2 + exp (ik x) + exp ( ik x)) = 1 2 E 0 2 (1 + cos(k x)) ( 4 ) Mclean 2017/5/10 5 / 35

5.4.1 FTS I(k) F ( x) = c 0 I(k)T (k, x)dk = const. + c 2 F ( x): Interferogram I(k) I(k) = 2 π 0 F ( x) cos(k x)d x 0 I(k) cos(k x)dk FTS R = 4 x max /λ Ex. x max = 10 cm, λ = 1 µm R = 400, 000 S/N FTS ( 4 ) Mclean 2017/5/10 6 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 7 / 35

5.4.2 : plane parallel plates d( l) n(= 1) θ( 1)( θ) mλ = 2nd cos θ (θ ) Fig 2: https://ja.wikipedia.org/wiki/ ( 4 ) Mclean 2017/5/10 8 / 35

5.4.2 narrow band prefilter Angular diameter: δβ = 8/R Free spectral range: λ FSP = λ m = λ2 2nd (cos θ 1?) Fig 3: Mclean ( 4 ) Mclean 2017/5/10 9 / 35

5.4.2 : R = λ δλ = λ λ FSP λ FSP δλ = 2F nd λ : F = λ FSP δλ plate F = π r/(1 r) 30-50 Transmitted intensity: δ = 2π λ 2nd cos θ I(δ) I(0) = 1 1 + (2F/π) 2 sin 2 (δ/2) ( 4 ) Mclean 2017/5/10 10 / 35

5.4.2 Fig 4: https://www.kogakugiken.co.jp/products/etalons.html ( 4 ) Mclean 2017/5/10 11 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 12 / 35

5.4.3 Fabry-Perot etalon mλ = 2nd cos θ Fabry-Perot etalon 1/2 blocking layer Fig 5: Mclean ( 4 ) Mclean 2017/5/10 13 / 35

5.4.3 ( ) 1/4 3-5 Fig 6: https: //www.global-optosigma.com/jp/ category/opt_d/opt_d03.html ( 4 ) Mclean 2017/5/10 14 / 35

5.4.3 λ = λ 0 1 ( n0 n e ) 2 sin 2 φ n 0 : ( 1) n e : spacer φ : external angle (blue shift) Fig 7: https: //www.global-optosigma.com/jp/ category/opt_d/opt_d03.html ( 4 ) Mclean 2017/5/10 15 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 16 / 35

5.5.1 3 Photon detectors ( ) Thermal detectors ( ) Coherent detectors ( 4 ) Mclean 2017/5/10 17 / 35

5.5.1 Photon or Thermal Photon detectors Thermal detectors Thermal detector spectral distribution (P ) Photon detector (N = P/hν) (N/P = λ/hc) ( 4 ) Mclean 2017/5/10 18 / 35

5.5.1 Photon detectors Photoemission device: charge carrier (electron) (external photoelectric effect) PMT photocathode UV imaging down conversion low energy photons (fluoresce) Photoabsorption device: charge carrier (internal photoelectric effect) Photoconductor effect free charge carrier Photovoltaic (Photodiode) effect carrier ( 4 ) Mclean 2017/5/10 19 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 20 / 35

5.5.2 valence band: conduction band: : forbidden energy gap (E G ) Fig 8: Mclean ( 4 ) Mclean 2017/5/10 21 / 35

5.5.2 ( )/ ( ) valence band conduction band ( ) E G conduction band valence band ( 4 ) Mclean 2017/5/10 22 / 35

5.5.2 valence band conduction band E th (ev) = kt = 0.026(T/300) ev valence band hole ( electron-hole pairs) E G 1eV 0eV 3.5eV 1eV 38 2.25eV(550nm) exp ( E G /2kT ) E G ( 4 ) Mclean 2017/5/10 23 / 35

5.5.2 ( ) Table 5.1 IV III-V (GaAs, InSb) II-VI (HgCdTe) Table 5.2 valence band conduction band ( ) λ c = hc 1.24 µm ev = E G E G ( 4 ) Mclean 2017/5/10 24 / 35

5.5.2 forbidden gap n-type conduction band p-type valence band Table 5.3 Fig 9: Mclean ( 4 ) Mclean 2017/5/10 25 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 26 / 35

5.5.3 Photoconductor electron-hole pair electron hole electron Fig 10: Mclean P [W] I = eηp hν vτ l η : τ : mean carrier lifetime ( a few milliseconds) v: charged carrier (v = µe = µv/l)(µ: carrier ) ( 4 ) Mclean 2017/5/10 27 / 35

5.5.3 Photoconductor transit time: l/v mean carrier lifetime transit time : G = vτ/l : S = I/P or V/RP S = eηg hc : 4eGIB (B: electrical bandwidth) ( 4 ) Mclean 2017/5/10 28 / 35

5.5.3 Photodiode p-n electron hole (depletion region) n-type n-type p-type (E F )( 1/2 ) E F n-type conduction band p-type valence band ( 4 ) Mclean 2017/5/10 29 / 35

5.5.3 Photodiode Fig 11: Mclean junction region (X 1 + X 2 ) V 0 p (forward bias) p depletion region (reversed bias) ( 4 ) Mclean 2017/5/10 30 / 35

5.5.3 Photodiode depletion region electron-hole pair P [W] I = eηp hν noise = 2eIB photoconductor G = 1 1/ 2 depletion region ( 4 ) Mclean 2017/5/10 31 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 32 / 35

5.5.4 Bolometer Thermometer (QE(η) 100%) Absorber( C [J/K]) Thermometer Absorber heat sink G [W/K] P [W] E = ηp t ( hν...??) T = T T 0 = E/C T = T 0 + (P + P bias )/G bolometer ( 4 ) Mclean 2017/5/10 33 / 35

Contents 5.4 Interferometers 5.4.1 The Fourier Transform Spectrometer (FTS) 5.4.2 The Fabry-Perot etalon 5.4.3 Interference filters 5.5 Detectors 5.5.1 Classification 5.5.2 Semiconductors 5.5.3 Photoconductors and photodiodes 5.5.4 Thermal detectors 5.5.5 Coherent detectors ( 4 ) Mclean 2017/5/10 34 / 35

5.5.5 Heterodyne Local Oscillator 1GHz : cryogenic transistor pre-amplifier 1GHz 40GHz: FET, parametric, and maser amplifier 40GHz : ( ) ν IF = ν S ν LO mixer diode: I-V I = V 2 I P SIS mixer: superconductor ( 4 ) Mclean 2017/5/10 35 / 35

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