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1 18 2
2 (SEU) SEU Barak Barak 3.2 Weibull SEU 10 4 SEU Calvel Barak Barak Barak Barak USEF USEF Weibull Barak Barak Weibull
3 1 1.1 SEU SEU 15 1 (1) Van Allen 80 90% 1% (2) 3 Fig. 1.1 (3) USEF SERVIS (4)
4 1 SEU SEU SEU 4 1 SEU 2 SEU 2 SEU 3 SEU SEU 4 SEU 4 SEU SEU SEU SEU ( 80%),He( 12%) ( 2%), ( 1%) (80 90%),He(10 20%), Fig. 1.1 (4) 2
5 1.2 SEU W.J. Stapor two parameter BENDEL model (5) P. Calvel PROFIT model (6) J. Barak semi-empilical model (7),(8) two parameter BENDEL model SEU 2 30MeV SEU SEU PROFIT model 28 SEU 200MeV semi-emplical model SEU SEU PROFIT model SEU SEU semi-empilical model Barak Barak Barak Barak S i 3
6 2 SEU SEU Fig. 2.1 SEU 2 Fig. 2.2 QMD (9) (SEU) Fig. 2.1 SEU 4
7 10 4 Product Cross Section MeV 200MeV 300MeV 400MeV 1GeV Atomic Number[Z] Fig S i 5
8 3 3.1 SEU Barak SEU Barak (7)(8) (1) σ ( E, d, L) = C n σ d g( E, d, L) σ( L) dl (3-1) p p Si react (3-1) C =0.6 (8), n Si cm -3 react 400mb d 2 m L LET E p g(e p,l) (L) SEU 0 p Barak 400mb 2 m g( E p, d, L) SBD(Surface barrier detector: ) (7) (3-2) g( E p, d, L) = β exp( βl) (3-2) E p E p d β ( E p, d) = d exp( ) exp( ) exp( ) (3-3) (L) SEU SEU (3-4) SEU 6
9 [ { } ] s L ) = σ 1 exp [( L L ) / W ] σ (3-4) ( 0 0 (3-4) (3-4) 0 SEU L 0 LET LET W, s L 0 W s (3-1) (3-1) 25MeV E p 300MeV 2µ m d 100µ m g( E p, d, L) σ (L) Fig. 3.1 g( E p, d, L) (a)200mev (b)20mev g( L) σ ( L) (3-1) SEU σ (L) L 0 7
10 SBD spectrum d=2um E p =200MeV σ(l) g(l) L 0 LET[MeV cm 2 /mg] Fig. 3.1(a) 200MeV g( E p, d, L) σ (L) SBD spectrum d=2um E p =20MeV σ(l) g(l) L 0 LET[MeV cm 2 /mg] Fig. 3.1(b) 20MeV g( E p, d, L) σ (L) 8
11 3.1.2 Barak react (E p,l) (L) 3 (L) SEU react (E p,l) 2 400mb Fig MeV 400mb 200MeV 400mb 400mb Barak (10) 20MeV 50MeV JENDL/HE-2004 (11) σ ( E, d, L) = C n σ ( E ) d g( E, d, L) σ( L) dl (3-5 p p Si react (3-5) Barak p 0 p Reaction cross section for 28 Si Energy(MeV) JENDL/HE-2004 Barak(400mb) Fig
12 3.2 Weibull SEU Barak SEU Weibull 4 (12) Origin 7.0 a 10 a 40 2 ( 0 2 a ) 2 Weibull 2 a40 [ { } ] f ( x, a,, a ) = a 1 exp [( x a ) a ] i (3.6) / 30 n 2 = w { y f ( x, a,, a )} w (3.7) i= 1 i i, y :, f ( x ) : i : i i w =1 i i n f 0 ( xi ) f 0 ( xi ) α jk = wi ( α jk = α kj ) a a i= 1 j f x ) = f ( x, a,, ) 0 ( i i 10 a40 k α ' = α ( j k) jk jj jk α ' = (1 + λ) α jj -1 δ a, δa 1 4 f ( x ) n 4 0 i 1 β j = wi { yi f 0 ( xi )}, δ a j = ( α ) jk β k ( j = 1, 4) i= 1 ak k = 1 10
13 a j0 + δ a j ( j = 1, 4) 2 2 ( a j0 + δa j ) 2 ( a 0 + δa) > 2 a ( a 0 + δa) < 2 a 0 a j0 + δ a j ( j = 1, 4) a j0 2 a + δ ) 2 a ) 1/10 ( 0 a0 ( ( a0 ) ( a0 + δa) < ( a0 + δa) a j ( j = 1, 4 a j δ ) Origin = n eff 1 p n eff n i= 1 w { y f ( x, a,, a )} i i i 10 : 40 p : n eff p (3.8) Origin 7.0 LM Levenberg-Marquardt 2 11
14 4 SEU 4.1 Calvel (6) 2000 Barak (8) 7 USEF (13) 8 15 Calvel Barak Calvel USEF USEF Calvel USEF USEF Calvel 2 Barak SEU ( σ 0 ) LET( L 0 ) SEU ( σ ) ( ε 0 ) Table 4.1 USEF SEU LET 1/100 LET LET USEF 2 Table 4.1 < SEU SEU Fig. 4.1 SRAM DRAM 0 0 USEF 1Mb DRAM 12
15 256kb Mb 4Mb 256kb 4Mb 4Mb 4Mb 16kb Mb Mb 4Mb 128Mb 128Mb 256Mb Calvel(SRAM) Calvel(DRAM) USEF(SRAM) USEF(DRAM) Heavy ion-saturation[cm 2 /bit] Fig. 4.1 SEU SEU 13
16 Table 4.1(a) SEU (SRAM) Table 4.1(b) SEU (DRAM) 14
17 4.2 Calvel Barak Barak 2 m Barak Barak Fig. 4.2 SEU Weibull SEU Table 4.2 SEU Calvel SEU Barak 7 3 Barak Fig SEU Kb SRAM HM Kb SRAM HM Weibull function LET[MeV cm 2 /mg] Fig. 4.2(a) SEU SEU 15
18 Kb SRAM 62832H 256Kb SRAM 62832H Weibull function LET[MeV cm 2 /mg] 10-9 Fig. 4.2(b) SEU SEU Kb SRAM HI62256R 256Kb SRAM HI62256R Weibull function LET[MeV cm 2 /mg] Fig. 4.2(c) SEU SEU 16
19 10 2 4Mb DRAM KM41C4000Z-8 4Mb DRAM KM41C4000Z Weibull function LET[MeV cm 2 /mg] Fig. 4.2(d) SEU SEU Mb DRAM 01G9274 4Mb DRAM 01G Weibull function LET[MeV cm 2 /mg] Fig. 4.2(e) SEU SEU 17
20 10 2 4Mb DRAM MT4C4001 4Mb DRAM MT4C Weibull function LET[MeV cm 2 /mg] Fig. 4.2(f) SEU SEU Mb DRAM IBM 16_MEG 16Mb DRAM IBM_16MEG Weibull function LET[MeV cm 2 /mg] 10-9 Fig. 4.2(g) SEU SEU 18
21 Table 4.2 Device SRAM HM kb SRAM 62832H 256kb SRAM HI 62256R 256kb DRAM KM41C4000Z-8 4Mb DRAM 01G9274 4Mb DRAM MT4C4001 4Mb DRAM IBM16M 16Mb Barak 2 m 2 m Fig. 4.3 Barak Fig. 4.3 (a) (b) SEU Barak Barak Fig. 4.4 Fig. 4.4 d Barak Barak 19
22 N X Exp X cal 100 i X Exp Average % Error = N X :, X :, N : Exp cal Table 4.3 (a) Barak Barak (b) 50MeV Fig Fig m Barak 2µ m d 100µ m 1.0 m Barak Fig MeV Table.4.3(a) Barak Barak 4-1 Barak 50MeV Table 4.3(b) Table 4.3(b) 50MeV Barak 50MeV (L) (L) 4.4 USEF Barak Barak 20
23 4Mb DRAM IBM01G d=2um d=3um d=4um Fig. 4.3(a) 4Mb DRAM KM41C4000Z-8 d=2um d=3um d=4um d=5um Fig. 4.3(b) 21
24 SRAM 16Kb HM6516 SRAM 256Kb 62832H 10-9 d=3.6µm d=1.0µm Fig. 4.4(a) Barak Barak ( =3.6 m) Fig. 4.4(b) Barak Barak ( =1.0 m) SRAM 256Kb HI62256R DRAM 4Mb KM41C4000Z-8 d=2.4µm d=4.4µm Fig. 4.4(c) Barak Barak ( =2.4 m) Fig. 4.4(d) Barak Barak ( =4.4 m) 22
25 DRAM 4Mb 01G9274 DRAM 4Mb MT4C d=2.3µm d=6.0µm Incident Energy[MeV] Fig. 4.4(e) Barak Barak ( =2.3 m) Fig. 4.4(f) Barak Barak ( =6.0 m) DRAM 16Mb IBM_16MEG d=1.5µm 10-9 Fig. 4.4(g) Barak Barak ( =1.5 m) 23
26 Table 4.3(a) Barak Barak (4-1) d[µm] [%] [%] SRAM HM SRAM 62832H SRAM 62256R DRAM KM41C4000Z DRAM 01G DRAM MT4C DRAM IBM_16MEG Table 4.3(b) 50MeV Barak Barak (4-1) d[µm] [%] [%] SRAM HM SRAM 62832H SRAM 62256R DRAM KM41C4000Z DRAM 01G DRAM MT4C DRAM IBM_16MEG
27 4.3 USEF USEF Weibull 3.2 USEF SEU /( n eff p) Barak Table 4.4 SEU Fig. 4.5 SEU Weibull SEU Table 4.4 USEF SEU Weibull 25
28 4.3.2 Barak Barak Calvel USEF 2 m Barak Barak Fig. 4.5 SEU SRAM 2 1Mb Fig. 4.1 DRAM SRAM DRAM 70MeV Calvel 2 USEF SRAM 2 1 DRAM 4 1 USEF Barak SEU 100MeV SEU SRAM 1Mb SRAM 1Mb Weibull function LET[MeV cm 2 /mg] Fig. 4.5(a) SEU SEU 26
29 SRAM 4Mb SRAM 4Mb Weibull function Exp LET[MeV cm 2 /mg] Fig. 4.5(b) SEU SEU SRAM 4Mb SRAM 4Mb Weibull function LET[MeV cm 2 /mg] Fig. 4.5(c) SEU SEU 27
30 SRAM 4Mb SRAM 4Mb Weibull function LET[MeV cm 2 /mg] Fig. 4.5(d) SEU SEU SRAM 8Mb SRAM 8Mb Weibull function LET[MeV cm 2 /mg] Fig. 4.5(e) SEU SEU 28
31 DRAM 128Mb DRAM 128Mb Weibull function LET[MeV cm 2 /mg] Fig. 4.5(f) SEU SEU DRAM 128Mb DRAM 128Mb Weibull function LET[MeV cm 2 /mg] Fig. 4.5(g) SEU SEU 29
32 DRAM 256Mb DRAM 256Mb Weibull function LET[MeV cm 2 /mg] Fig. 4.5(h) SEU SEU Weibull Fig. 4.5 SEU SRAM DRAM SEU SEU Weibull /( n eff p) 2 SEU Barak Fig. 4.6(a) SRAM Fig. 4.6(b) DRAM 30
33 SRAM 2 Fig. 4.6(a) A B /( n eff p) 2 /( n eff p) = 2.273e 18 A σ = 2.023e 07, L = , W = , s = /( n eff p) = 2.414e 18 B σ 0 = 2.018e 07, L0 = 1.05, W = , s = Fig. 4.6(a) SRAM L 0 2 SEU DRAM 2 Fig. 4.6(b) C D /( n eff p) 2 /( n eff p) = 3.493e 18 C σ = 7.46e 06, L = 2.90, W = 1923, s = /( n eff p) = 4.214e 18 D σ = 1.00e 07, L = , W = 123.9, s = DRAM /( n eff p) C D SEU 3 Fig. 4.6(b) DRAM SEU Weibull LET SEU 2 Weibull 31
34 SRAM 8Mb SRAM 8Mb A B LET[MeV cm 2 /mg] A B Fig. 4.6(a) SEU DRAM 256Mb DRAM 256Mb C D C D LET[MeV cm 2 /mg] Fig. 4.6(b) SEU 32
35 4.4 Calvel Barak Barak SBD 2 m 0.1cm 0.1cm 1 Barak (14) Barak 2 m 10 m 10 m 1 Fig Fig MeV 200MeV Barak LET (4-2) ε [ MeV ] = LET[ MeV cm / mg] [ g / cm ] d[ µ m] 2 = MeV cm / d[ µ m] (4-2) Barak SEU ( ) Fig. 4.9 Fig. 4.8 ( ) ( ) SEU 20MeV 200MeV SEU (20MeV/200MeV) Barak Barak 33
36 Barak 0.1cm 0.1cm 2 m 2 m 10 m 10 m Fig. 4.7 Barak Kodama 34
37 10 1 d=2um E p =20MeV d=2um E p =200MeV g(ε)[kodama] σ(ε) g(ε)[kodama] σ(ε) g(ε)[barak] g(ε)[barak] Deposited energy[mev] (a) 20MeV Deposited energy[mev] (b) 200MeV Fig. 4.8 (a)20mev (b)200mev Barak 10-1 d=2um E p =20MeV 10-1 d=2um E p =200MeV g(ε)[barak] σ(ε) 10-2 g(ε)[barak] σ(ε) g(ε)[kodama] σ(ε) Deposited energy[mev] (a) 20MeV (b) 200MeV Fig. 4.9 (a)20mev (b)200mev g( ) ( ) 10-3 g(ε)[kodama] σ(ε) Deposited energy[mev] 35
38 4.5 Fig m 5 m SRIM (15) Fig m 0.45MeV 4 m 0.38MeV 3 m 0.31MeV 2 m 0.23MeV 1 m 0.12MeV 2 m 0.23MeV 2 m 0.23MeV 2 m 100% 0.23MeV 0.23MeV 2 m 100% 2 m 2 m 0.23MeV 2 m 2 m Calvel LET 1.49MeV cm 2 /mg (4-2) 2 m 0.697MeV Calvel USEF USEF Weibull LET 0.183MeV cm 2 /mg MeV USEF LET 2.0MeV cm 2 /mg 0.936MeV USEF USEF Weibull USEF
39 Vavilov SEU Fig Direct ionization of proton um 4um 3um 2um 1um Fig
40 5 Barak Barak Barak 2 m 2 m Barak 2µ m d 100µ m Barak Calvel USEF Barak Calvel Calvel 100MeV SEU SEU Weibull DRAM SEU LET SEU 38
41 Barak Calvel USEF USEF USEF SEU 1. SEU
42 ( ),, (1998). ( ( ),,,, (2000). ( ) K. Oishi, JAERI-Conf (1995), p.125. ( ) USEF, ( ( ) W. J. Stapor, J. P. Meyers, J. B. Langworthy and E. L. Peterson, IEEE Trans. on Nucl. Sci, Vol.37, No.6, (1990), p ( ) P. Calvel, C. Barillot and P. Lamothe, IEEE Trans. on Nucl. Sci, Vol.43, No.6, (1996), p ( ) J. Barak, J. Levinson, A. Akkerman and Y. Lifshitz, IEEE Trans. on Nucl. Sci, Vol.43, No.3, (1996), p.979. ( ) J. Barak, IEEE Trans. on Nucl. Sci, Vol.47, No.3, (2000), p.545. ( ) K. Niita, S. Chiba, T. Maruyama, H. Takada, T. Fukahori, Y. Nakahara, JQMD code, JAERI-Data/Code , (1998). ( ) R. F. Carlson, Atomic Data and Nuclear Data Tables, Vol. 63, No. 1, (1996), p. 94 ( ) Y. Watanabe, T. Fukahori, K. Kosako, N. shigyo,t. Murata, N. Yamano, T. Hino, K.Maki, H. Nakashima, N. Odano and S. Chiba, Int. Conf. on Nucl Data for Science and Technology, AIP Conf. Proc. Vol. 769, (2005), p ( ),,, (1983). 40
43 ( ) USEF, ( ( ), 2005, (2006). ( ) J. Ziegler, SRIM code, (1990). ( 41
1章 序論
第 1 章序論 1.1 研究背景 近年 科学技術の発展により ロケット スペースシャトル 人工衛星 国際宇宙ステーションなど 宇宙開発は急速に進んでいる しかし 宇宙空間に存在するこれらの物体は 絶えず高エネルギーの宇宙線 ( 宇宙空間を飛び交う高エネルギーの放射線 ) の脅威に曝されている 高エネルギーの宇宙線 ( 宇宙線陽子 重イオンなど ) が半導体デバイスに入射すると ビット内情報が反転する
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7 π L int = gψ(x)ψ(x)φ(x) + (7.4) [ ] p ψ N = n (7.5) π (π +,π 0,π ) ψ (σ, σ, σ )ψ ( A) σ τ ( L int = gψψφ g N τ ) N π * ) (7.6) π π = (π, π, π ) π ±
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