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1 EllipsometryDrude Budde EllipsometryMaxwell Ellipsometry Substrate Two phase system Ellipsometry Ellipsometer Kim Sang Youl Ellipso Technology Co., Ltd CEO Ph. D Kim Jong Jin Application Manager Sales Marketing Park Sang Uk Senior Development Engineer RD Seo Young Jin Ryu Jang Wi Yabuuchi Kazuo Ellipsometry monochromator light AspnesTheetenAzzam Ellipsometry Spectroscopic EllipsometerSE AspnesSpectroscopic Ellipsometry VedamTheetenCollinsWoollamSE
2 Sopra Rudolph TechnologyJ. A. Woollam Company SE SE LEED RHEEDAESSIMSXPSUPSXRDXTEM STM EllipsometrySE SE Maxwell Ellipsometry Maxwell w 2 c u c n n n n ik i k x y x a n sin n sin b DB n o n E H x y p s E P n cos n cos r p a E P n cos n cos E s n cos n cos r s b n cos n cos E s x E o, k o E o, k o o n o n y E o, k o Effective medium Effective medium BruggemanMaxwell Garnett Lorentz Lorenz Bruggeman Maxwell Garnett Lorentz Lorenz
3 d 1 n n 1 d 2 d n n 2 n n n n1 Ellipsometryp s Ellipsometry tane i E out in p E p r p r e ips E out in s E s s r s tan r p r 1 r 2 r 3 r n r n1 tan 1st Film 2nd Film nth Film Substrate n Aspnes Ellipsometer Ellipsometry p s n SE SE SE Aspnes G G NP NP n nd n cos n N calcexp i1 Ellipsometry photon in photon out Ellipsometry polarization state in polarization state out SE EEi
4 2 vs. Photon Energy csi csi asi asi 1. Xe Photon EnergyeV Photon EnergyeV c Si a Si DC SE RA Ellipsometry K K Ellipsometry SE UV E cosa sin A sina cos A r p cosp n P E r s sinp cos P IE I cosa sina bulk optical property SESE tantan P SE cos P A ft f Hadamard band gap energy n ik i k Kramers KronigK K 1 2 AspnesSi SiO UV in situ SE Si SiO Si SiO Si O SiO.. Collins asi H SiH H c Si asi H.eV.eV Ellipsometry asi H penetration depth
5 EPSILON EPSILON 1 a 3.4 ev probe T s24 1 : 1 SiH 4 : H 2 EPSILON b 4.2 ev probe T s24 1 : 1 SiH 4 : H EPSILON 1 a Si H.eV.eV OPD SiO 2 csiasi csi XTEM SE 25A SiO 2 243A 122A csi.82asi A 555A csi A O1m asi csi 255A Direct Technique but NOT nondestructive csi.21asi.79.3 csi 273A.2 Not Direct Technique but Nondestructive, Quantitative and Inexpensive a b c Cross Sectional Transmission Electron MicroscopyX TEMspectroscopic ellipsometer c Si asi H SE crystal layer XTEM SE XTEM Ellipsometry nm Imaging Ellipsometry BT
6 Deltadeg Refraclive indexv Psideg Thicknessd Opyc SIC IPyC buffer TRISO RelativeAnisotropy of Nuclear Fuel Samples Imaging Ellipsometrynm TRISOTristructual Isotropic buffer PyCIPyCInner Pyrolytic CarbonSiC OPyCOuter PyCUO UCUCUThC Buffer IPyC IPyCSiC HCI SiC OPyCSiC Attenuation Nuclear fuel h 6h.3 3rd rd 4rd Shell measurement point Anisotropy n R n 2rdIPyC 3rdSiC 4rdOPyC Isotropy Attenuation Attenuation TRISO Elli RScAttenuation Alignment layer sub nanometer retardation retardation Alignment layer n R n 12h Core 6h SIO 2 ON CSI SiO 2 5nm 1nm 2nm Attenuation
7 retardationnm azimuth angledeg Measured Simulated Elli Ret V PI retardation Apparent Retardationnm a Exp. Cal. Apparent Retardationnm b Azimuth angledeg Azimuth angledeg Retardationnm Thetadeg Cal. Exp. TFT Glass retardation Zero Retardation Zero Retardation retardationretardation Elli Ret V retardation nm Elli Ret V PI retardation retardation.nm. TFT Glass PI retardation TFT Glass SE Depth profile in situ BT Imaging EllipsometerLCD PI zero retardation Ellipsometer Ellipsometer SE
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![( ) nm ( ) ( ) α = 1 ( ) ( ) d ln T. (2) 1 R d [1 3] 1000 nm [4 7] Review Tomlin [8 15] [1] n 2 < n 1 ( 1 2 ) 2 2n 1 d = (m + 1) λ Tmax, 2n 1 d](/thumbs/94/118052292.jpg "( ) nm ( ) ( ) α = 1 ( ) ( ) d ln T. (2) 1 R d [1 3] 1000 nm [4 7] Review Tomlin [8 15] [1] n 2 < n 1 ( 1 2 ) 2 2n 1 d = (m + 1) λ Tmax, 2n 1 d")
( ) 1 5 nm ( ) ( ) α = 1 ( ) ( ) d ln T. (2) 1 R d [1 3] 1 nm [4 7] Review Tomlin [8 15] [1] n 2 < n 1 ( 1 2 ) 2 2n 1 d = (m + 1) λ Tma, 2n 1 d = (m + 1 2 ) λ Tmin (3) λ 1 5 nm ( 1) Tma λ Tmin ( 2) c-si
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ω 0 m(ẍ + γẋ + ω0x) 2 = ee (2.118) e iωt x = e 1 m ω0 2 E(ω). (2.119) ω2 iωγ Z N P(ω) = χ(ω)e = exzn (2.120) ϵ = ϵ 0 (1 + χ) ϵ(ω) ϵ 0 = 1 +
2.6 2.6.1 ω 0 m(ẍ + γẋ + ω0x) 2 = ee (2.118) e iωt x = e 1 m ω0 2 E(ω). (2.119) ω2 iωγ Z N P(ω) = χ(ω)e = exzn (2.120) ϵ = ϵ 0 (1 + χ) ϵ(ω) ϵ 0 = 1 + Ne2 m j f j ω 2 j ω2 iωγ j (2.121) Z ω ω j γ j f j
m(ẍ + γẋ + ω 0 x) = ee (2.118) e iωt P(ω) = χ(ω)e = ex = e2 E(ω) m ω0 2 ω2 iωγ (2.119) Z N ϵ(ω) ϵ 0 = 1 + Ne2 m j f j ω 2 j ω2 iωγ j (2.120)
2.6 2.6.1 mẍ + γẋ + ω 0 x) = ee 2.118) e iωt Pω) = χω)e = ex = e2 Eω) m ω0 2 ω2 iωγ 2.119) Z N ϵω) ϵ 0 = 1 + Ne2 m j f j ω 2 j ω2 iωγ j 2.120) Z ω ω j γ j f j f j f j sum j f j = Z 2.120 ω ω j, γ ϵω) ϵ
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20 5 Absorption spectra of biomolecules over wide energy range are very important to study their radiation effects in terms of the optical approximation proposed by Platzman. Using synchrotron radiation
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213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造 ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい
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