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1 Tokyo Institute of Technology high-k/ In.53 Ga.47 As MOS - Defect Analysis of high-k/in.53 G a.47 As MOS Capacitor using capacitance voltage method,,, Darius Zade,,, Parhat Ahmet,,,,,,

2 ~InGaAs high-k ~ SiO (~.nm) Si EOT~.nm excess leakage current HfO SiO x layer (.5~.7nm) Si EOT~.9nm Present stage Higher-k in Direct Contact Si EOT~.5nm Continous Scaling for Future Electronics EOT~.5nm nm W La O 3 k=3 La-silicate k=8~4 5 o C, 3 min EOT:Equivalent oxide thickness Higher-k in Direct Contact III-V sub. Green Nanoelectronics high-k HfO La O 3 Si In.53 Ga.47 As Si In.53 Ga.47 As (cm /Vs) 6 (ev)..74 Si-MOS high-k In.53 Ga.47 As Ref. Dae-Hyun Kim et. al, ECS., ()

3 本研究の目的 C-V特性とコンダクタンス法を用いて 電気特性から周波数分散の原因を検討 In.53Ga.47As-MOSキャパシタ 欠陥モデル InGaAs基板の欠陥が影響して いるのではないか 3

4 ~High-k/Si SiO /Si ~ G ω ωgc p m ox = Gm + ω ( Cox Cm) D it.5 Gp q ω max : G p /ω (F/cm ) i 3-6 E-E -9 i =. ev SiO /Si peak SiO in low frequency La-Silicate/Si Frequency (Hz) 4 ~ 5 Hz Hz Time Constant (s) Ref,, τ ot τ it Oxide E-E i (ev) Si E c E f interface states (D it ) E V oxide bulk trap (D ot ) Si() Oxide traps interface traps 4

5 C-V (D it ) D it C-V W/HfO /n- In.53 Ga.47 As MOS CAP 5

6 ~In.53 Ga.47 As MOS ~ n- or p-in.53 Ga.47 As/InP HF (NH 4 ) S (electron beam deposition) HfO nm 8 In-situ RF W Reactive ion etching(rie) Al F.G( N :H = 97%:3% ) 37 o C5min 6

7 HfO /In.53 Ga.47 As C-V Capacitance (µf/cm ).5.5 PMA in F.G. (a) p- type khz~ MHz.5 PMA in F.G. (b) n- type khz~ MHz µm 5 µm 5 µm 5 µm Gate Voltage (V) Gate Voltage (V) Gate Voltage (V) W/HfO /n- or p- In.53 Ga.47 As C-V J (A/cm ) n-type p-type W HfO (nm) In.53 Ga.47 As p n 7

8 High-k/ n- In.53 Ga.47 As Conductance G p /ω (F/cm ) K K (a) (b) -.7 V ~ -.3 V. V ~.5 V -.7 V Frequency (Hz) V 5 µm 5 µm 5 µm 5 µm Frequency (Hz) InGaAs 8

9 (n- type) G p /ω (F/cm ) HfO /n- In.53 Ga.47 As MOS CAP 3-5 (a) 4 K.V (b) 7 K.V (c) 77 K (d) 77 K.5V.V.5V.V W HfO (nm) In.53 Ga.47 As.45V.4V Frequency (Hz) Capacitance (µf/cm ) (e) khz~ MHz 4 K Gate voltage (V) (f) E c 5 khz~ MHz 77 K Gate voltage (V) C-V : 9

10 W/HfO /n- In.53 Ga.47 As MOS CAP : Bulk Trap : Interface trap E c V g > ψ B =.7 ev E f.37 ev E BT E i E v.74 ev E f (ψ s >. ev) N A = 8 6 Equivalent Circuit C ox C it C acc G it C BT G BT E BT E f E BT

11 InGaAs InGaAs

12 JST

13 TEM W PMA at 4 o C. nm HfO n-in.53 Ga.47 As defects W HfO InGaAs W HfO In.53 Ga.47 As HfO defect nm nm InGaAs HfO /InGaAs 3

14 n-, p-type CV characteristics Capacitance (µf/cm ) Capacitance (µf/cm ).5 PMA in F.G. (a) khz~ MHz.5 PMA in F.G. (b) khz~ MHz µm 5 µm 5 µm 5 µm Gate Voltage (V) Gate Voltage (V) Gate Voltage (V) PMA in F.G. PMA in F.G. (c) (d) khz~ MHz khz~ MHz.5.5 J (A/cm ) n-type p-type µm 5 µm 5 µm 5 µm Gate Voltage (V) Gate Voltage (V) Gate Voltage (V) J (A/cm ) n-type p-type

15 XPS 5

16 (p- type) HfO /p- In.53 Ga.47 As MOS CAP K K K (a) -.8 V (b) -. V (c) -.6 V -.4 V - V -.8 V - V -.8 V -.6 V G p /ω (F/cm ) 4.8 V.5 V. V V.8 V V Frequency (Hz) Frequency (Hz) Frequency (Hz) p- type 6

17 k-value La O 3 K eff 5 HfO K eff 9 7

18 G p / (µf/cm ) 5.E 6 4.E 6 4.E 6 3.E 6 3.E 6.E 6.E 6.E 6 5.E 7 defect A defect C. V -.7 V defect B.E+ Frequency ( Hz ) defect A : oxide bulk traps defect B : interface states defect B defect C V g > E f PMA in F.G. nm C ox : Interface states : Bulk Trap C acc C it G it C BT G BT W HfO n-in.53 Ga.47 As defects E c E BT E f E i E v W HfO InGaAs defect C : substrate bulk traps 8

19 -3 E BT Time Constant (s) K p-type 3K 4 K n-type 77 K E-E v (ev) V g > E f E f V g < n- type : Bulk Trap : Mid-gap interface traps 3K low temp E c E f E v E c E f E i E v E BT low temp (ψ s >. ev) N D = 7 p- type 9

20 (p- type) HfO /p- In.53 Ga.47 As MOS CAP K K K (a) -.8 V (b) -. V (c) -.6 V -.4 V - V -.8 V - V -.8 V -.6 V G p /ω (F/cm ) 4.8 V.5 V. V V.8 V V Frequency (Hz) Frequency (Hz) Frequency (Hz) p- type

21 τ e = τ t exp( E/ kt) Trapped charge response time Charge carrier trapping time constant: σ τ t = συ t N :capture cross section: 6 cm υ t :thermal velocity: e:5.5 5 h:. 5 Nc ~ = 4.8.( m / m ) T ( cm ) 5 3/ 3/ 3 Γ Nv ~ = 4.8.( m / m ) T ( cm ) 5 3/ 3/ 3 h n N N E k T / i = ( c. v) exp( g /( B )) :. 7 :5.5 8 :~.

22 ~High-k ~ La O 3 /Ge MOS C-V Capacitance (µf/cm ) W La O 3 (5nm) Ge khz khz PMA in N Frequency Dispersion < % peak D it : 5 µm 5 µm cm - ev Gate voltage (V)

23 G p /ω (F/cm ) 5.E E 6 4.E E 6 3.E 6.E 6.E 6.E 6 5.E HfO /InGaAs khz 5 khz Frequency ( Hz ) Gate Voltage ( V ).E+.5 Capacitance (µf/cm ) Hump hysteresis Strech-out Accumulation frequency dispersion Oxide (bulk or border) Interface states Semiconductor bulk C acc C dep C ox C it G it C ox C it G it C BT G BT C ot G ot 3

24 border traps 4

25 D it : G ω p m ox = Gm + ω ( Cox Cm) D it ωgc.5 Gp q ω max 5

26 (D it ) Quasi-static D it D it C-V C-V D it Dieter K. Schroder: Semiconductor Material and Device Characterization 3rd Edition (6). : ~ LSI ~ (99). 6

27 Weak Fermi-level pinning Mid-Gap Dit Mid-Gap 4 o C,5min (with Si) D it [ev - cm - ] o C,5min (with Si) p-type n-type E [ev] 7

28 3nm 3nm () () p-type In.53 Ga.47 As InP n-type In.53 Ga.47 As InP # (p) (n) InGaAs InP (Buffer) Handle 3nm x 7 (Zn) 3nm x 8 (Zn) 5µm 5x 8 (Zn) 3nm 8x 6 (Si) 3nm 3x 8 (Si) 35µm 5x 8 (S) 8

29 .Series Resistance R s (contact, substrate..) measured capacitance C m device capacitance C = ( GR ) ( ) c c s + + ω CR c s parallel conductance (Nicollian&Brews). Fermi Level Pinning) 9

30 τ p = υσ p ps Carrier C it = ( τ ) p Density of holes Hole capture cross secion Hole capture time Accumulation p s capture time( τ p ) C it qd it Depletion τ p C it C = [( C + C ) + C ] tot it sub ox 3

31 InGaAs high-k Al O 3 cm - /ev high-k MG Al O 3 III-V Sub. MG High-k III-V Sub. Al O 3 La O 3 Capacitance ( F/cm ) La O 3 /n-ingaas CV khz khz khz MHz W-FLP D it - - Gate Voltage (V) 3

32 3

33 InGaAs MOS Mid-Gap D it Weak Fermi-level pinning Ref. Hwang et. al, APL. Lett. 96, 9 () Weak Fermi-level pinning (WFLP) Ref. Martens et. al, MICROELEC. 84 (7) Mid-Gap D it Ref. APL. 96, 9 () 33

34 (D it ) Quasi-static D it D it C-V C-V D it Dieter K. Schroder: Semiconductor Material and Device Characterization 3rd Edition (6). : ~ LSI ~ (99). 34

35 La O 3 high-k/si La O 3 ( r =3.4) (E g =5.6eV) Silicate high-k/si 5 o C, 3 min J. A. Ng et al.: IEICE Electronics Express 3 (6) 36 La-silicate La-silicate/Si nm La O 3 35

36 Interface States D it [ev - cm - ] 3 4 o C,5min (with Si) o C,5min (with Si) p-type E [ev] Increasing towards mid-gap More effective for Conduction band Response frequency (Hz).E+ 9.E+9 6.E+6 3.E+3.E+ -3.E-3.E-6-9.E-9 Electron Hole -6 p-type n-type E v Trap energy (ev) E c n-type E g =.74eV 36

37 XPS 37

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