1.06μm帯高出力高寿命InGaAs歪量子井戸レーザ

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ただきよみやくぼ
7 years ago
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2 ZnO RPE-MOCVD UV- ZnO MQW LED/PD

3 & Energy harvesting LED ( ) PV & ZnO...

4 SAW NTT ZnO LN, LT IC PbInAu/PbBi Nb PIN/FET LD/HBT m InGaAs QW-LD 2007 MOMBE MOVPE InGaAs/InP GaAs/AlGs MOVPE CNT InGaAs Q-dot for Qbit (CREST) Graphene/CNT UV- ZnO LED/PD Intel 4040 Pentium 1Kb DRAM RPE-MOCVD SiO 2 EDFA WDM GaAs DH CW LD LD LED DARPA UNIX TCP/IP WWW IT Google iphone ipad

5 ZnO Bandgap (ev) AlN GaN 6H-SiC InN BN ZnO MgO C (diamond) 3C-SiC CdO CdTe ZnS MgS MgSe ZnSe ZnTe CdS GaP CdSe Si GaAs InP Lattice constant (A) Ge ZnO (a=3.15 c=5.12) Eg=3.3eV Eg Mg Å Zn Å Cd Å MgZnO ZnO r B =1.8nm ZnCdO. GaN (a=3.25 c=5.21)3.4ev Al Å, Ga Å, In Å r B =2.2 nm 60 mev vs GaN 25meV

6 RPE-MOCVD ZnO L-MBE PLD), MBE, PA... MOCVD MOCVD 2 DH EL p (r )

7 O 2 cathode RPE-MOCVD PC DEZn, DMCd anode spectrometer quartz view window EtCp2Mg quartz guide tube jet zone matching circuit 13.56MHz substrate heater thermo couple 5 sccm 5 sccm RF0-50 W 0.01 Torr O2 DEZn, DMCd + H2 TMIn, Cu(dibm) 2

8 a c ZnO c - c : nm ZnO a x 4 : nm %, r a ZnO c SiC (p-4h-, 8off) ZnODH 4.9% a 3 c r a 2 a 1 a

9 Intensity (arb. units.) OH O 2 plasma/h 2 carrier O 2 plasma/n 2 carrier O OH Hα N 2 N 2 NO N 2 O Wavelength (nm) H 2 Carrier gas O *, Hα * radicals N 2 Carrier gas O 2*, N * 2, NO *

10 PL 100 Mg 0.18 Zn 0.82 O RT Transmittance (%) ZnO Zn 0.86 Cd 0.14 O Zn 0.70 Cd 0.30 O Normalized PL intensity Zn 0.47 Cd 0.53 O Photon energy (ev)

11 Zn(Mg,Cd)O This work Review(Chen et al.) Wurtzite This work PLD(Makino et al.) E g ev E ( x) = E (0)(1 x) + E (1) x bx(1 x) g g g Optical band gap (ev) Mg content, y Cd content, x E ( x ) = 3.28(1 x ) x 3.04 x (1 x ) g,zncdo E ( y ) = 3.28(1 y ) y 3.47 y (1 y ) g,mgzno E g α 2 b ZnCdSe 0.5 InGaN 2.5 ZnCdO 3.0 MgZnO 3.5

12 PL PL peak energy (ev) FWHM (mev) K Normalized PL intensity 20 K x= Cd content Photon energy (ev) Experiment Calculation PL 240 mev (x=0.19) In 0.5 Ga 0.5 N 200 K (Zimmermann ) ( ) ( ) ( ) deex x V0 x ( x) = 2 2ln2 x( 1 x) dx Vex x E ex (x): PL V 0 (x): ( ) 3 V ex (x): V ( x) = 8π r x r b (x): ex B

13 MQW ZnO 30 nm 10 MQWs ZnCdO : 2 ~ 21 nm ZnO : 10 nm ZnO 100 nm a XRD steady-state 20 K 8 K

14 PL L W = 2 nm ZnCdO 20K ZnO : He-Cd nm - 35 mw/cm 2 Normalized PL intensity 4 nm 8 nm 11 nm PL 21 nm Zn 0.85 Cd 0.15 O bulk 140nm Photon energy (ev)

15 PL emission energy (ev) PL FWHM (mev) bulk 140 Well width, L W (nm) 20 K Experiment Calculation L W < 4nm energy (ev) E c / E v = 64/36 E c E v E e E h L w ZnOZnCdOZnO h 4 nm (~ : 1.8 nm) - / e

16 PL lifetime, τ 1, τ 2 (ps) Oscillator strength, f τ 2 τ bulk 140 Well width, L w (nm) 8 K τ 2-55 ps (L W 2nm) ~ 70 ps (L W 8nm) ( ) 3 πε mc f 2 1 = ne % τ ω τr R f = 1.3 (L W 2nm) ψ ( x) 2 f, (τ R = τ 2 ) J. Feldmann et al., Phys. Rev. Lett. 59, 2337 (1987).

17 LED(DH ) RGB-EL R n-mgzno n-zn 1-y Cd y O p-sic Cross section G B EL intensity FWHM=146meV34meV Wavelength (nm) A. Nakamura et al., APL 90(2007) EL (2 )

18 SiO 2 /Si CVD Ni, Cu ( )C 2 H 2,- - -, SiC SiC SiC+O 2 SiO+C TEM nm Graphene HOPG D G 2D

19 Ni ACVD Layer number of exfoliated graphene over 10layers (a) (b1) segregated graphene I G /I 2D = W 2D =31.3cm cm -1 2D FWHM W 2D (cm -1 ) exfoliated graphene layer segregated graphene layer Intensity (arb.units.) (b2) exfoliated graphene I G /I 2D =0.223 W 2D = 35.2cm cm -1 2D I G /I 2D Raman Shift (cm -1 ) (a) (b) (c) 3 layers 4 layers 5layers 0.34 TEM 3-5 multilayer >10 3nm 2nm

20 CVD a-sapphire (a) (b) 800D G 2D 0.34nm Intensity (arb.units) (c) 4nm (d) 2nm nm 10nm Raman Shift (cm -1 ) (a) 900, (b) ) a-sapphire (c) (d) 1000

21 Sheet Resistance on Transmittance

22 RPE-MOCVD ZnO OH O 1.8eV3.7eV LEDMQW LED, Schottky-PD /

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untitled Tokyo Institute of Technology high-k/ In.53 Ga.47 As MOS - Defect Analysis of high-k/in.53 G a.47 As MOS Capacitor using capacitance voltage method,,, Darius Zade,,, Parhat Ahmet,,,,,, ~InGaAs high-k ~