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1 Tokyo Institute of Technology AlGaN/GaN C Annealing me Dependent Contact Resistance of C Electrodes on AlGaN/GaN, Tokyo Tech.FRC, Tokyo Tech. IGSSE, Toshiba, Y. Matsukawa, M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, W.Saito 1

2 5% IT others 10% heat lighting 14% kw hr ( ) motor 57% 5731 kwh GaN Si GaN [ev] [MV/cm] [cm 2 /V/s] (HEMT:2000 [ cm/s] ) [W/cm/K]

3 GaN Metal Metal Metal Metal AlGaN GaN 2DEG Buffer Layer Si Substrate AlGaN/GaN HEMT, RonA (mωcm 2 ) Si ρ c =10µΩcm 2 1µΩcm µωcm V 60% GaN C g =35nF/cm 2 L ch =0.5µm V g -V th =5V µωcm GaN 1000 (V) W.Saito Solid-State Electronics 48(2004) AlGaN GaN 3

4 GaN φ Bn AlGaN Ef 850 /Al/Ni/Au (a) (b)haadf STEM GaN N GaN N N [1]L.Wang Apl (2005) 4 [2]M.Hiroki IEICE Techical Report ED (2008)

5 N C 4.3eV, 3160 o C 3.9nm) C 5

6 C 298K Substance H 298 (kj/mol) Al 0.25 Ga 0.75 N N C CN B 2,C,Si 2 X(B,C,Si ) AlGaN C 2Al0.25 Ga 0.75N + C 1 = N + CN + Al Ga 190.7kJ/mol C CN 6

7 SPM,HF TEOS SiO 2 (100nm) BHF RIE(Cl 2 ) TEOS SiO 2 (100nm) BHF( ) C(20nm) N(50nm) RIE 20nm 500 o C~1100 o C (N 2 ) I V (TLM ) 7 SiO 2 (100nm) N C C AlGaN GaN distance AlGaN GaN Buffer layer Si sub 50nm N(50nm)/C(20nm) 18set 1set C/N C 0.45nm 0.85nm 7

8 C C(111) C(200) C(311) Log(counts) C(220) C(222) C C SiO 2 Si 18set 1set Annealing temperature:500 o C θ 2θ(deg) K.Tuokedaerhan Apl (2013) C( 500 o C C XRD 8

9 Current(mA) o C 1000 o C 950 o C 1050 o C 80 m 300 m 900 o C 800 o C 150 m Voltage(V) I-V characteristic of C. C 1000~1050 9

10 Total resistance(ω) Annealing temperature:1000 o C Annealing time:1min 293K 200K 56K Contact distance(μm) Dependence of total resistance on distance 10

11 Contact specific resistivity(ωcm 2 ) K 56K /Temperature(K) Dependence of contact specific resistivity on temperature 11

12 Contact specific resistivity(ωcm 2 ) Annealing temperature:1000 o C Annealing time(min) Annealing time dependent contact specific resistivity of C 12

13 500 o C 1000 o C 1min C/N 950 o C 50min C/N 1100 o C 1min C/N 1000 o C 1min C/N SEM) 950 o C O 2 O 13

14 C C 14

15 15

16 1, 2, 3, 4, C

17 1, N 50nm :C=1:1 20nm C C AlGaN GaN 18set 1set C 0.45nm 0.85nm 2, AlGaN SiO 2 SiO 2 (100nm) distance N(50nm)/C(20nm) AlGaN GaN Buffer layer Si sub

18 3, (/Al/Mo) C 4, C C [ cm] 80(Bulk),687(20nm, ) [g/cm 3 ] 4.92~4.938 [J/g] 0.7~0.9 CRC Materials Science and Engineering Handbook (2000)

19 Metal Metal Metal AlGaN GaN Buffer Layer Si Substrate Metal 2DEG, RonA (mωcm 2 ) 10 1 Si ρ c =10µΩcm 2 750V 60% GaN 0.1 1µΩcm 2 C g =35nF/cm L ch =0.5µm µωcm 2 V g -V th =5V µωcm (V) GaN W.Saito Solid-State Electronics 48(2004) 750V 1000V V AlGaN/GaN c=10 6 cm 2 c=10 5 cm 2 19

20 GaN GaN [MV/cm] Si 10 [W/cm/K] (Si 1.5 ) [cm/s] (Si 2.5 ) Si SiC GaN [ev] [MV/cm] [cm 2 /V/s] ~ [ cm/s] [W/cm/K]

21 Au Ni//Pt/Mo Al Au Ni Al Al Fig1. The /Al specific resistivity on n GaN vs annealing time at 900 o C M.E.Lin Appl. Phys. Lett. 64(8) (1994) Fig2. Al//Al/Ni/Au /Al/Ni/Au M.Hiroki IEICE Techical Report ED (2008) 10 6 < c cm 2 <

22 GaN L.Wang Apl (2005) L.Wang Apl (2005) N N GaN GaN GaN GaN 22

23 C AlGaN V φ Bn AlGaN Ef C AlGaN Si( m) (C: m) 23

24 24,Al,AlN AlGaN Metal W Semiconductor Schottky 24 Si 2 AlGaN GaN Si 2 AlGaN GaN GaN N N GaN N N N

25 /cm 2 /cm 2 (2012) 25

26 rs rf rfs θ (2012) rf: ( /m 2 rs: /m 2 rfs: /m 2 Frank van der Merwe(FM) s fs / f 1 =0 26

27 θs Air or overlayer γ s γ s γb (a) X: θi Substrate γ b γ i γ i : : (b) (c) (d) Lc: T.P.Nolan and R.Sinclair J.Appl.Phys.71(2)(1991) 27

28 A, B, C, D, (2012) 28

29 :C(0.0075nm/sec) (0.013nm/sec) C(60sec) (65sec)/(39sec) C 18set C AlGaN GaN 1set C C 0.45nm 0.85nm 29

30 ( ) Current ma) m Voltage V) 1050 o C 300 m 800 o C 900 o C 150 m Fig. 5 I-V characteristic of C o C 1100 o C 1050 o C 1050 o C Total Resistance(Ω 1V SiO2 N(50nm)/C (17.68nm) distance AlGaN(26nm) GaN(1.3µm) Ohmic Annealing Temperature( o C) Fig. 6 Total resistance on annealing temperature o C Ω 5C

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untitled 213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい