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3 2MBI1TA-6 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit 3

4 3. Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified ) Items Symbols Conditions Maximum Ratings Units Collector-Emitter voltage VCES Ic=1mA 6 V Gate-Emitter voltage VGES ±2 V Ic Duty=1 % 1 Collector current Ic pulse 1ms 2 A IF Duty=5 % 1 IF pulse 1ms 2 Collector Power Dissipation Pc 1 device 31 W Junction temperature Tj 15 Storage temperature Tstg -4~ +125 Isolation voltage (*1) Viso AC : 1min. 25 V Screw Torque Mounting (*2) 3.5 N m Terminals (*2) 3.5 (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 N m (M5) Terminal 2.5~3.5Nm (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Characteristics Items Symbols Conditions min. typ. Max. Units Zero gate voltage Collector current ICES VGE = V, VCE = 6 V ma Gate-Emitter leakage current IGES VCE = V, VGE = ±2 V na Gate-Emitter threshold voltage VGE(th) VCE = 2 V, Ic = 1 ma V Collector-Emitter VCE(sat) VGE = 15 V Chip V saturation voltage Ic = 1 A Terminal Input capacitance Cies VGE = V Output capacitance Coes VCE = 1 V pf Reverse transfer capacitance Cres f = 1 MHz ton Vcc = 3 V Turn-on time tr Ic = 1 A tr (i) VGE = ±15 V μs Turn-off time toff RG = 33 Ω tf Forward on voltage VF IF = 1 A Chip V Terminal Reverse recovery time trr IF = 1 A μs Allowabe avalanche energy during short circuit cutting off PAV Ic > 2A,Tj = mj (Non-repetitive) 5. Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. Max. Units Thermal resistance Rth(j-c) IGBT (1 device) FWD /W Contact Thermal resistance Rth(c-f) With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound. 4

5 6. Indication on module 2MBI1TA-6 1A 6V Lot No. Place of manufucturing 7. Applicable category This specification is applied to IGBT Module named 2MBI1TA-6 8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75%. Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when tranporting. 9. Definitions of switching time ~ 9% V V L VGE trr Vcc VCE 9% I rr ~ Ic 9% RG VGE VCE V A Ic 1% tr(i) 1% VCE 1% ~ tf Ic tr ton toff 5

6 1. Definition of the allowable avalance energy during short circuit cutfing of. -VCEP IC -ICP PAV= 1 2 VCEP ICP tf(sc) VCE tf(sc) 11. UL recognition This products is recognized by Underwriters Laboratories Inc., the file No. is E Packing and Labeling Packing box Display Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box * Each modules are packed with electrical protection. 6

7 13. Reliability test results Reliability Test Items Mechanical Tests Environment Tests Test categories Test items Test methods and conditions Reference Acceptance norms Number EIAJ of sample number ED Terminal Strength Pull force : a 4N A ( 1 : ) (Pull test) Test time : 1±1 sec. Method 1 2 Mounting Strength Screw torque : 2.5 ~ 3.5 N m (M5) A ( 1 : ) Test time : 1±1 sec. Method 2 3 Vibration Range of frequency : 1 ~ 5Hz A ( 1 : ) Sweeping time : 15 min. Acceleration : a 1G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum acceleration : 1G A ( 1 : ) Pulse width :.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction 1 High Temperature Storage temp. : 125±5 B ( 1 : ) Storage Test duration : 1hr. 2 Low Temperature Storage temp. : -4±5 B ( 1 : ) Storage Test duration : 1hr. 3 Temperature Storage temp. : 85±3 B ( 1 : ) Humidity Relative humidity : 85±5% Storage Test duration : 1hr. 4 Unsaturated Test temp. : 121 B ( 1 : ) Pressure Cooker Atmospheric pressure : Pa (Reference value) Test duration : 2hr. 5 Temperature +3 B ( 1 : ) Cycle Test temp. : Low temp High temp RT 5 ~ 35 Dwell time : High ~ RT ~ Low ~ RT 1hr..5hr. 1hr..5hr. Number of cycles : 1 cycles 6 Thermal Shock + B ( 1 : ) Test temp. : High temp Low temp. - Used liquid : Water with ice and a boiling water Dipping time : 5 min. par each temp. Transfer time : 1 sec. Number of cycles : 1 cycles 7

8 Reliability Test Items Endurance Tests Test categories Test items Test methods and conditions Reference Acceptance norms Number EIAJ of sample number ED High temperature + D ( 1 : ) Reverse Bias Test temp. : Ta = (Tj 15 ) Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to C-E VGE = V Test duration : 1hr. 2 High temperature + D ( 1 : ) Bias Test temp. : Ta = (Tj 15 ) Bias Voltage : VC = VGE = +2V or -2V Bias Method : Applied DC voltage to G-E VCE = V Test duration : 1hr. 3 Temperature B ( 1 : ) Humidity Bias Test temp. : o C Relative humidity : % Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to C-E VGE = V Test duration : 1hr. 4 Intermitted ON time : 2 sec. D ( 1 : ) Operating Life OFF time : 18 sec. (Power cycle) Test temp. : Tj=1±5 deg ( for IGBT ) Tj 15, Ta=25±5 Number of cycles : 15 cycles Failure Criteria Item Characteristic Symbol Failure criteria Unit Note Lower limit Upper limit Electrical Leakage current ICES - USL 2 ma characteristic ±IGES - USL 2 µa Gate threshold voltage VGE(th) LSL.8 USL 1.2 ma Saturation voltage VCE(sat) - USL 1.2 V Forward voltage VF - USL 1.2 V Thermal IGBT VGE - USL 1.2 mv resistance or VCE FWD VF - USL 1.2 mv Isolation voltage Viso Broken insulation - Visual Visual inspection inspection Peeling - The visual sample - Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. 8

9 Reliability Test Results Test categories Test items Reference norms EIAJ ED-471 Number of test sample Number of failure sample Mechanical Tests 1 Terminal Strength A (Pull test) Method 1 2 Mounting Strength A Method 2 3 Vibration A Shock A High Temperature Storage B Environment Tests 2 Low Temperature Storage B Temperature Humidity B Storage 4 Unsaturated B Pressure Cooker 5 Temperature Cycle B Thermal Shock B High temperature Reverse Bias D Endurance Tests 2 High temperature Bias D ( for gate ) 3 Temperature Humidity Bias B Intermitted Operating Life D (Power cycling) ( for IGBT ) 9

10 3 Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 3 Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) Collector current : Ic [ A ] 2 1 VGE= 2V 15V 12V 1V Collector current : Ic [ A ] 2 1 VGE= 2V 15V 12V 1V 8V 8V Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 3 Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 12 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 1 Collector current : Ic [ A ] 2 1 Tj= 25C Tj= 125C Collector - Emitter voltage : VCE [ V ] Ic=2A Ic=1A Ic=5A Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 2 Capacitance vs. Collector-Emitter voltage (typ.) VGE=V, f= 1MHz, Tj= 25C 5 Dynamic Gate charge (typ.) Vcc=3V, Ic=1A, Tj= 25C 25 1 Capacitance : Cies, Coes, Cres [ pf ] 5 1 Cies Coes Cres Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nc ] 1

11 1 Switching time vs. Collector current (typ.) Vcc=3V, VGE=+-15V, Rg=33ohm, Tj= 25C 1 Switching time vs. Collector current (typ.) Vcc=3V, VGE=+-15V, Rg= 33ohm, Tj= 125C Switching time : ton, tr, toff, tf [ nsec ] 1 ton toff tr tf Switching time : ton, tr, toff, tf [ nsec ] 1 ton toff tr tf Collector current : Ic [ A ] Collector current : Ic [ A ] 5 Switching time vs. Gate resistance (typ.) Vcc=3V, Ic=1A, VGE=+-15V, Tj= 25C 1 Switching loss vs. Collector current (typ.) Vcc=3V, VGE=+-15V, Rg=33ohm Eon(125C) Switching time : ton, tr, toff, tf [ nsec ] 1 1 ton toff tr tf Switching loss : Eon, Eoff, Err [ mj/pulse ] 5 Eon(25C) Eoff(125C) Eoff(25C) Err(125C) Err(25C) Gate resistance : Rg [ ohm ] 1 2 Collector current : Ic [ A ] 3 Switching loss vs. Gate resistance (typ.) Vcc=3V, Ic=1A, VGE=+-15V, Tj= 125C 3 Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=33ohm, Tj<=125C Switching loss : Eon, Eoff, Err [ mj/pulse ] 2 1 Eon Eoff Collector current : Ic [ A ] 2 1 Err Gate resistance : Rg [ ohm ] Collector - Emitter voltage : VCE [ V ] 11

12 2 Forward current vs. Forward on voltage (typ.) 3 Reverse recovery characteristics (typ.) Vcc=3V, VGE=+-15V, Rg=33ohm Forward current : IF [ A ] 1 Tj=125C Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1 trr(125c) trr(25c) Irr(125C) Irr(25C) Forward on voltage : VF [ V ] Forward current : IF [ A ] 2 Transient thermal resistance 1 FWD Thermal resistanse : Rth(j-c) [ C/W ].1 IGBT Pulse width : Pw [ sec ] 12

13 Warnings - This product shall be used within its abusolute maximun rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格 ( 電圧, 電流, 温度等 ) の範囲内で御使用下さい絶対最大定格を超えて使用すると素子が破壊する場合があります - Conect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 万一の不慮の事故で素子が破壊した場合を考慮し商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて2 次破壊を防いでください - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し製品の信頼性寿命が満足できるか検討の上本製品を適用して下さい製品の信頼性寿命を超えて使用した場合装置の目標寿命より前に素子が破壊する場合があります - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸有機物腐食性ガス ( 硫化水素, 亜硫酸ガス等 ) を含む環境下で使用された場合製品機能外観などの保証は致しかねます - Use this product within the power cycle curve(thechnical Rep.No:MT6M457) 本製品はパワーサイクル寿命カーブ以下で使用下さい ( 技術資料 No.:MT6M457) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact probrem. 主端子及び制御端子に応力を与えて変形させないで下さい端子の変形により接触不良などを引き起こす場合があります - According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. 本製品に使用する主端子用のネジの長さは外形図に従い正しく選定下さいネジが長いとケースが破損する場合があります - Use this product with keeping the cooling fin's flatness between screw holes within 1um and the rouphness within 1um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a cirtical accident. 冷却フィンはネジ取り付け位置間で平坦度を1um 以下表面の粗さは1um 以下にして下さい誤った取り扱いをすると絶縁破壊を起こし重大事故に発展する場合があります - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧電流の動作軌跡が RBSOA 仕様内にあることを確認して下さい RBSOA の範囲を超えて使用すると素子が破壊する可能性があります - If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合素子が破壊する場合があります取り扱い時は静電気対策を実施して下さい 13

14 Cautions - Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富士電機は絶えず製品の品質と信頼性の向上に努めていますしかし半導体製品は故障が発生したり誤動作する場合があります富士電機製半導体製品の故障または誤動作が結果として人身事故火災等による財産に対する損害や社会的な損害を起こさないように冗長設計延焼防止設計誤動作防止設計など安全確保のための手段を講じて下さい - The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は富士電機製品を使用した代表的な応用例を説明するものであり本仕様書によって工業所有権その他権利の実施に対する保障または実施権の許諾を行うものではありません - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine ralaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計製造されたものではありません本仕様書の製品を車両機器船舶航空宇宙医療機器原子力制御海底中継機器あるいはシステムなど特殊用途へのご利用をご検討の際はシステム構成及び要求品質に満足することをご確認の上ご利用下さい If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.

R e v i s e d R e c o r d s Date Classification Ind. Content Applied date Drawn Checked Checked Approved Mar.-9-5 Enactment Issued date T.Miyasaka K.Y

SPECIFICATION Device Name : Type Name : Spec. No. : IGBT MODULE 2MBIU4A-12 MS5F 661 Mar. 9 5 Mar. 9 5 S.Miyashita T.Miyasaka K.Yamada Y.Seki 1 H4-4-7b R e v i s e d R e c o r d s Date Classification Ind.

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