Revised Records Date Classifi cation Ind. Content Applied date Drawn Checked Checked Approved 2Jun'1 enactment Issued data H.Kakiki K.Ohshika O.Ikawa

Size: px

Start display at page:

Download "Revised Records Date Classifi cation Ind. Content Applied date Drawn Checked Checked Approved 2Jun'1 enactment Issued data H.Kakiki K.Ohshika O.Ikawa"

そよこしの
5 years ago
Views:

1 Specification (8A/33V1in1 IGBTModule) Device Name : IGBTModule Type Name : 1MBI8UG33 Spec. No. : MS5F7548 DRAWN DATE 31May'1 NAME T.Koga APPROVAL CHECKED CHECKED 2Jun'1 4Jun'1 H.Kakiki K.Ohshika O.Ikawa MS5F H447

2 Revised Records Date Classifi cation Ind. Content Applied date Drawn Checked Checked Approved 2Jun'1 enactment Issued data H.Kakiki K.Ohshika O.Ikawa MS5F H446

3 Type Name : 1MBI8UG33 / PKG.No. M Outline Drawing ( Unit : mm ) 2. Equivalent circuit main collector sense collector gate sense emitter main emitter MS5F H443

4 3.Absolute Maximum Ratings ( at Tc= 25 C unless otherwise specified ) CollectorEmitter voltage GateEmitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation voltage Tc=25 C Tc=8 C Tc=25 C Tc=8 C AC, Q 1pC Partial discharge extinction voltage Ve 2.6 kvac (acc. To IEC 1287) Screw Torque *2 (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6) Main Terminals 8~1 Nm (M8) Sense Terminals 1.7~2.5 Nm (M4) 4. Electrical characteristics ( at Tj= 25 C unless otherwise specified) Zero gate voltage Collector current GateEmitter leakage current GateEmitter threshold voltage CollectorEmitter saturation voltage Input capacitance Turnon Turnoff Forward on voltage Reverse recovery Lead resistance, terminalchip Items Symbols Conditions between terminal and copper base *1 Items Symbols ICES IGES VGE(th) VCE(sat) (main terminal) VCE(sat) (chip) Cies ton toff Mounting Main Terminals Sense Terminals 2.5 VGE = V VCE = 33V VCE=1V,VGE=V,f=1MHz Vcc = 18V Rg = 2.4 Ω VGE=V Tj= 25 C R lead 3.4 Ic = 8A tr 2.3 VGE=±15V, Tj=125 tf VF (main terminal) VF (chip) VCE = V IF = 8A VCES VGES Ic Icp Ic pulse Pc Tj Continuous 1ms 1ms 1 device AC : 1min. Tj=125 C Tj= 25 C Tj=125 C trr IF = 8A Ic 8 Tstg Viso VGE=±2V VCE = 2V Ic = 8mA VGE=15V Ic = 8A Conditions Tj= 25 C Tj=125 C Tj= 25 C Tj=125 C 3.1 V ±2 V ~ +125 A kw C 6. kvac Characteristics min. typ. max Maximum Ratings N m Units 1. ma 7.5 V Units na 16 nf V μs V μs mω MS5F H443

5 5. Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Thermal resistance(1device) Rth(jc) IGBT 13. FWD 25. Contact Thermal resistance(1device) Rth(cf) with Thermal Compound (*) 6. * This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/kW 6. Indication on module Typ.Name Rating LotNo.forFuji 1MBI8UG33 8A 33V Placeofmanufucturing Display(16DIGITS) 7.Applicable category This specification is applied to IGBT Module named 1MBI8UG33. 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 C and humidity of 45 to 75%. Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 9% ~ V V VGE L trr VCE Irr Ic Vcc 9% ~ 9% RG VGE VCE Ic V A Ic 1% rt ton tr(i) 1% VCE 1% ~ toff ft 1. Packing and Labeling Display on the packing box Logo of production Type name Lot No Products quantity in a packing box MS5F H443

6 11.Reliability test results Reliability Test Items Mechanical Tests Environment Tests Test items Test methods and conditions Reference norms EIAJ ED471 (Aug.21 edition) Test categories Acceptance Number of sample number 1 Terminal Strength Pull force : 4N Test Method 41 5 ( : 1 ) (Pull test) Test time : 1±1 sec. MethodⅠ 2 Mounting Strength Screw torque : ~2.5 ~ 2.1 N m (M4) Test Method 42 5 ( : 1 ) 4.25 ~ 5.75 N m (M6) MethodⅡ 8.~ 1. N m (M8) Test time : 1±1 sec. 3 Vibration Range of frequency : 1 ~ 5Hz Test Method 43 5 ( : 1 ) Sweeping time : 15 min. Reference 1 Acceleration : 1m/s 2 Condition code B Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum acceleration : 1m/s 2 Test Method 44 5 ( : 1 ) Pulse width : 6.msec. Condition code A Direction : Each X,Y,Z axis Test time : 3 times/direction 1 High Temperature Storage temp. : 125±5 Test Method 21 5 ( : 1 ) Storage Test duration : 1hr. 2 Low Temperature Storage temp. : 4±5 Test Method 22 5 ( : 1 ) Storage Test duration : 1hr. 3 Temperature Storage temp. : 85±2 Test Method 13 5 ( : 1 ) Humidity Relative humidity : 85±5% Test code C Storage Test duration : 1hr. 4 Unsaturated Test temp. : 12±2 Test Method 13 5 ( : 1 ) Pressurized Vapor Test humidity : 85±5% Test code E Test duration : 96hr. 5 Temperature Test Method 15 5 ( : 1 ) Cycle Test temp. : Low temp. 4±5 High temp. 125 ±5 RT 5 ~ 35 Dwell time : High ~ RT ~ Low ~ RT 1hr..5hr. 1hr..5hr. Number of cycles : 1 cycles 6 Thermal Shock + Test Method 37 5 ( : 1 ) Test temp. : High temp. 1 5 Method Ⅰ Low temp. Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 1 sec. Number of cycles : 1 cycles +5 Condition code A MS5F H443

7 Reliability Test Items Endurance Tests Endurance Tests Test items Test methods and conditions Reference norms EIAJ ED471 (Aug.21 edition) Test categories Acceptance Number of sample number 1 High temperature Test Method 11 5 ( : 1 ) Reverse Bias Test temp. : Ta = 125±5 (Tj 15 ) Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to CE VGE = V Test duration : 1hr. 2 High temperature Test Method 11 5 ( : 1 ) Bias (for gate) Test temp. : Ta = 125±5 (Tj 15 ) Bias Voltage : VC = VGE = +2V or 2V Bias Method : Applied DC voltage to GE VCE = V Test duration : 1hr. 3 Temperature Test Method 12 5 ( : 1 ) Humidity Bias Test temp. : 85±2 o C Condition code C Relative humidity : 85±5% Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to CE VGE = V Test duration : 1hr. 4 Intermitted ON time : 2 sec. Test Method 16 5 ( : 1 ) Operating Life OFF time : 18 sec. (Power cycle) Test temp. : Tj=1±5 deg ( for IGBT ) Tj 15, Ta=25±5 Number of cycles : 15 cycles Failure Criteria Item Characteristic Symbol Failure criteria Unit Note Lower limit Upper limit Electrical Leakage current ICES USL 2 1 ma characteristic ±IGES USL 2 A Visual Gate threshold voltage VGE(th) LSL.8 USL 1.2 ma Saturation voltage VCE(sat) USL 1.2 V Forward voltage VF USL 1.2 V Thermal IGBT VGE USL 1.2 mv resistance or VCE FWD VF USL 1.2 mv Isolation voltage Viso Broken insulation Visual inspection inspection Peeling The visual sample Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement readouts shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F H443

8 Reliability Test Items Test categories Test items Reference norms EIAJ ED471 (Aug.21 edition) Number of test sample Number of failure sample Mechanical Tests 1 Terminal Strength Test Method 41 (Pull test) 2 Mounting Strength 3 Vibration 4 Shock Method Ⅰ Test Method 42 Method Ⅱ Test Method 43 Condition code B Test Method 44 Condition code B Environment Tests Endurance Tests 1 High Temperature Storage Test Method Low Temperature Storage Test Method 22 Temperature Humidity Test Method 13 Storage Unsaturated Test Method 13 Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock Test code C Test code E Test Method 15 Test Method 37 method Ⅰ Condition code A 1 High temperature Test Method 11 Reverse Bias 3 Temperature Humidity Bias Test Method High temperature Bias Test Method 11 5 ( for gate ) 4 Intermitted Operating Life ( Power cycling ) ( for IGBT ) Condition code C 5 Test Method 16 5 MS5F H443

9 Collector current vs. CollectorEmitter voltage (typ.) Tj= 25 o C / chip 15V 12V 16 VGE=2V Collector current vs. CollectorEmitter voltage (typ.) Tj= 125 o C / chip 16 15V VGE=2V 12V Collector current : Ic [A] V Collector current : Ic [A] V 4 2 8V 4 2 8V CollectorEmitter voltage : VCE [V] CollectorEmitter voltage : VCE [V] Collector current : Ic [A] Collector current vs. CollectorEmitter voltage (typ.) VGE=15V / chip Tj=25 o C Tj=125 o C CollectorEmitter voltage : VCE [V] CollectorEmitter voltage vs. GateEmitter voltage (typ.) Collector Emitter voltage : VCE [ V ] Tj=25 o C / chip Gate Emitter voltage : VGE [ V ] Ic=16A Ic=8A Ic= 4A Capacitance vs. CollectorEmitter voltage (typ.) Dynamic Gate charge (typ.) VGE=V, f= 1MHz, Tj= 25 o C Vcc=18V, Tj= 25 o C 1. 2 VCE Capacitance : Cies, Coes, Cres [ nf ] Cies Cres Coes CollectorEmitter voltage : VCE [V] VGE Gate charge : Qg [ μc ] GateEmitter voltage : VGE [V] CollectorEmitter voltage : VCE [V] MS5F H443

10 Switching time vs. Collector current (typ.) Vcc=18V, VGE=±15V, Rg=2.4Ω, Tj= 25 o C Switching time vs. Collector current (typ.) Vcc=18V, VGE=±15V, Rg=2.4Ω, Tj=125 o C 1 1 Switching time : ton, tr, toff, tf [ nsec ] 1 toff ton tf tr Switching time : ton, tr, toff, tf [ nsec ] 1 tf tr ton toff Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time : ton, tr, toff, tf [ nsec ] ton toff tr tf Switching time vs. Gate resistance (typ.) Vcc=18V, Ic=8A, VGE=±15V, Tj= 125 o C Switching loss : Eon, Eoff [ mj/pulse ] Switching loss vs. Collector current (typ.) Vcc=18V, VGE=±15V, Rg=2.4Ω Tj=125 Tj=25 Eon Eo f Eon Eo f Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] 6 Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=18V, Ic=8A, VGE=±15V, Tj=125 o C ±VGE=15V, Tj=125 o C / chip 2 Switching loss : Eon, Eoff [ mj/pulse ] Eon Eoff Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] Collector Emitter voltage : VCE [ V ] MS5F H443

11 Forward current vs. Forward on voltage (typ.) chip Switching loss vs. Collector current (typ.) Vcc=18V, VGE=±15V, Rg=2.4Ω Forward current : IF [ A ] Tj=25 o C Tj=125 o C Switching loss : Err [ mj/pulse ] Tj=125 o C Tj=25 o C Forward on voltage : VF [ V ] Forward current : IF [ A ] Switching loss : Err [ mj/pulse ] Switching loss vs. Gate resistance (typ.) Vcc=18V, IF=8A, VGE=±15V, Tj=125 o C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Reverse recovery characteristics (typ.) Vcc=18V, VGE=±15V, Rg=2.4Ω Tj=25 o C Irr Tj=125 o C Tj=125 o C trr Tj=25 o C Gate resistance : Rg [ Ω ] Forward current : IF [ A ] FWD safe operating area (max.) Transient thermal resistance (max.) 2 Tj=125 o C 1. IR [ A ] Thermal resistanse : Rth(jc) [ C/kW ] FWD IGBT Collector Emitter voltage : VCE [ V ] Pulse width : Pw [ sec ] MS5F H443

12 Warnings This product shall be used within its maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the maximum ratings at measuring between sense emitter and sense collector. 製品の最大定格 ( 電圧, 電流, 温度等 ) の範囲内で御使用下さい補助エミッタ端子と補助コレクタ端子間の測定で最大定格を超えて使用すると素子が破壊する場合があります Connect adequate fuse or protector of circuit between threephase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. 万一の不慮の事故で素子が破壊した場合を考慮し商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず付けて火災, 爆発, 延焼等の2 次破壊を防いでください Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. 製品の使用環境を十分に把握し製品の信頼性寿命が満足できるか検討の上本製品を適用して下さい製品の信頼性寿命を超えて使用した場合装置の目標寿命より前に素子が破壊する場合があります If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 酸有機物腐食性ガス ( 硫化水素, 亜硫酸ガス等 ) を含む環境下で使用された場合製品機能外観等の保証はできません Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to deltatj mode which is stated as above and deltatc mode. DeltaTc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. 本製品はパワーサイクル寿命カーブ以下で使用下さい ( 技術資料 No.: MT5F12959) パワーサイクル耐量にはこの ΔTj による場合の他に ΔTcによる場合がありますこれはケース温度 (Tc) の上昇下降による熱ストレスであり本製品をご使用する際の放熱設計に依存しますケース温度の上昇下降が頻繁に起こる場合は製品寿命に十分留意してご使用下さい Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. 主端子及び制御端子に応力を与えて変形させないで下さい端子の変形により接触不良などを引き起こす場合があります Use this product with keeping the cooling fin's flatness between screw holes within 5um at 1mm and the roughness within 1um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 冷却フィンはネジ取り付け位置間で平坦度を 1mmで5um 以下表面の粗さは 1um 以下にして下さい過大な凸反りがあったりすると本製品が絶縁破壊を起こし重大事故に発展する場合がありますまた過大な凹反りやゆがみ等があると本製品と冷却フィンの間に空隙が生じて放熱が悪くなり熱破壊に繋がることがあります MS5F H443

13 Warnings In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) 素子を冷却フィンに取り付ける際には熱伝導を確保するためのコンパウンド等をご使用ください又塗布量が不足したり塗布方法が不適だったりするとコンパウンドが十分に素子全体に広がらず放熱悪化による熱破壊に繋がる事がありますコンパウンドを塗布する際には製品全面にコンパウンドが広がっている事を確認してください ( 実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます ) It shall be confirmed that IGBT's operating locus of the turnoff voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. ターンオフ電圧電流の動作軌跡が RBSOA 仕様内にあることを確認して下さい RBSOAの範囲を超えて使用すると素子が破壊する可能性があります If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. 制御端子に過大な静電気が印加された場合素子が破壊する場合があります取り扱い時は静電気対策を実施して下さい Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に主端子や制御端子に過大な応力を与えないで下さい端子構造が破壊する可能性があります In case of insufficient VGE, erroneous turnon of IGBT may occur. VGE shall be set enough value to prevent this malfunction. (Recommended value : VGE = 15V) 逆バイアスゲート電圧 VGE が不足しますと誤点弧を起こす可能性があります誤点弧を起こさない為に VGE は十分な値で設定して下さい ( 推奨値 : VGE = 15V ) In case of higher turnon dv/dt of IGBT, erroneous turnon of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, VGE, RG, CGE to prevent the malfunction. ターンオン dv/dt が高いと対向アームの IGBT が誤点弧を起こす可能性があります誤点弧を起こさない為の最適なドライブ条件 (+VGE, VGE, RG, CGE) でご使用下さい This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between CE terminals. Use this product within its maximum voltage. VCESを超えた電圧が印加された場合アバランシェを起こして素子破壊する場合があります VCEは必ず最大定格の範囲内でご使用下さい MS5F H443

14 Cautions Fuji Electric Systems is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Systems semiconductor products, take some measures to keep safety such as redundant design, spreadfirepreventive design, and malfunctionprotective design. 富士電機システムズは絶えず製品の品質と信頼性の向上に努めていますしかし半導体製品は故障が発生したり誤動作する場合があります富士電機システムズ製半導体製品の故障または誤動作が結果として人身事故火災等による財産に対する損害や社会的な損害を起こさないように冗長設計延焼防止設計誤動作防止設計など安全確保のための手段を講じて下さい The application examples described in this specification only explain typical ones that used the Fuji Electric Systems products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本仕様書に記載してある応用例は富士電機システムズ製品を使用した代表的な応用例を説明するものであり本仕様書によって工業所有権その他権利の実施に対する保障または実施権の許諾を行うものではありません The product described in this specification is not designed nor made for being applied to the equipment or systems used under lifethreatening situations. When you consider applying the product of this specification to particular used, such as vehiclemounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. 本仕様書に記載された製品は人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを目的として設計製造されたものではありません本仕様書の製品を車両機器船舶航空宇宙医療機器原子力制御海底中継機器あるいはシステムなど特殊用途へのご利用をご検討の際はシステム構成及び要求品質に満足することをご確認の上ご利用下さい If there is any unclear matter in this specification, please contact Fuji Electric Systems Co., Ltd. MS5F7548 H443

R e v i s e d R e c o r d s Date Classification Ind. Content Applied date Drawn Checked Checked Approved Mar.-9-5 Enactment Issued date T.Miyasaka K.Y

SPECIFICATION Device Name : Type Name : Spec. No. : IGBT MODULE 2MBIU4A-12 MS5F 661 Mar. 9 5 Mar. 9 5 S.Miyashita T.Miyasaka K.Yamada Y.Seki 1 H4-4-7b R e v i s e d R e c o r d s Date Classification Ind.