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1 OHO2006
2
3 Accelerator Laboratory 10 MW Multi-Beam Klystron Specifications Operating Frequency 1.3 GHz RF Pulse Width 1.5 ms Peak Output Power 10 MW Number of Beams 6 Beam Voltage 120 kv Beam Current 140 A Micro-Perveance 3.4 Repetition Rate 5 pps Efficiency 60 % Toshiba MBK
4 Accelerator Laboratory 2
5 Accelerator Laboratory MA/22
6 10kV 1.7kA -120kV 140A 1.7 ms 5Hz
7 Switch V k =120kV C R=120kV/140A =857 τ D r V = V 0 e t CR C = τ R D r E = 1 2 CV 2 k τ=1.7ms Dr=1% R=857 2 C=198µF 1kW E=1.4MJ 24 Dr=20% C, E 1/20 1/20 C=9.9µF (2 ) C=1426µF(1 )
8 C FNAL Quentine Kerns SCR( C L 20% 1% 1kV,
9 10kV 1.7kA GTO(Gate turn-off thyristor ) IGBT(Insulated Gate Bipolar Transistor) IGCT(Integrated Gate Commutated Thyristor)
10 No-Healing W v = 1 2 ε rε 0 E 2 W (J) v (m 3 ) ε r ε (8.85x10-12 F/m) E (V/m) Self-Healing(SH) ~7µm ~100V/µm ~200V/µm
11 Self-Healing Type Capacitor Test Capacitor Breakdown Capacitor Element Down-sizing of capacitor Case volume V of capacitor: V = 2W ηεe 2 W : stored energy ε : dielectric constant η : packing factor E : field strength( ~ 60 V/µm for no-healing capacitor) Cross section of dielectric/electrode Configulation(not to scale) Electric field strength(v/µm) Accelerated Life Test Electric field strength vs Lifetime Lifetime(Shots) SH NH Ref(n=20.8) L V n = L 0 V 0 Capacitor Volume 1/4 ATF Modulator 50pps X 7,000H X 8 Years
12 NH SH 133kJ/m 3
13 (A) (t r ) L l () N p 120kV A A = V s τ N s B N s 1.7ms ~2T(dc t r = 2.2 L l R L l = 1 2 µ H 2 2 dv N s L l = t r R 2.2 = 100µs 857Ω 2.2 R=120kV/140A =857 = 39mH
14 STF#1 Primary voltage 21.7 kv Primary current 588 A Primary impedance 36.8 Secondary voltage 130 kv Secondary current 98 kv Secondary impedance 1327 Flat-top pulse width 1.5 ms Rise-time(10-90%) 40µs Pulse droop < 3% Step-up ratio 1:6 Pulse repetition rate 5pps Design Feature DCbias Auto winding Heater transformer is isolation transformer type. Cores 25 Cores used for JHF pulse transformer were reused in total number of 39 cores for cost saving. Material is 0.22mm thick silicon steal ribbon. 4.4 tons in weight
15 1255mm (2 Primary inductance : 60 H Leakage inductance : 20 mh Distributed capacitance : 570 pf 167T L l =28 mh@abb 65T 65T 1 65T 158T 1710mm 660mm 4.8t 1.84t 2.5t 9.14t
16 ABB (2 ):28mH 2590(W)x1200(D)x1340(H)mm
17 V S = E R L C L C 2R sin ωt p 2 sin ωt p 2 cos( ωt b ) cos ωt b + ωt p 2
18
19 LC Z = L C T = 2π L C LC L = T 2 1 π Z C = T 2 Z π T/2> Z~ 5%. STF#1 T/2=2.2ms, Z=1.7 L=412µH, C=1190µF C=1200µF L=420µH
20 Peak Output Power 11.4 MW Secondary Output Voltage 130 kv Secondary Output Current 98 A Pulse width 1.7 ms Flat-top width > 1.5 ms Rise time(10-90%) < 0.1ms Flatness 0.5% Repetition Rate 5 pps Pulse Transformer Ratio 1:6 Capacitor Bank 282 µf LC Bouncer Inductance 1.2 mh Capacitance 0.42 mf Series Switch Voltage 21.7 kv Current 588 A TH2104A 5MW Klystron
21 ~100m High-Voltage Coaxial Cable IGBT Switch Klystron TH kV Use existing components possible 0.42mF 1.2mH Add 150µF capacitor Install a bouncer circuit Change to new pulse transformer for long pulse operation Bouncer Circuit 1:6 Heater Transformer
22 Capacitor Bank and Crowbar unit VCB SCR unit DC Power Supply(Tent House)
23 Bouncer Circuit Klystron TH2104 IGBT Switch unit Pulse Transformer STF Klystron Gallery
24 IGBT Switch Use 36 IGBTs in series Trigger: Optical fiber cable IGBT Driver Board IGBT Mitsubishi CM600H-24H Rated Voltage : 1200V Rated Current : 600A Switch unit
25 Clipper Diode SCR Inductor Capacitor Bouncer unit Inside of Bouncer Circuit
26 Klystron Currrent(A) Klystron Current(A) Time(ms) Es=17kV, Pw=1.7ms, fr=5pps Peak Klystron voltage=98kv Rise-time(10-90%)=33µs Time(ms) Es=16kV, Pw=1.7ms, fr=5pps
27 Bouncer Voltage(V)/Current(A) Klystron Voltage Bouncer Current Bouncer Voltage Time(ms) Klystron Voltage(kV) Klystron Voltage(kV) ms 0.4ms 0.52ms 0.6ms 0.7ms Es=17kV fr=5pps Time(ms) Es=20kV, Pw=1.7ms, fr=5pps Rise-time(10-90%)=33µs Es=17kV, Pw=1.7ms, fr=5pps Flatness=0.8%(p-p)
28 FNAL/TTF #2,3 1 TTF MW :2ms :1:13 GTO L:600µH :25,000 ( ,3 TTF MWMBK :18,000 (2005 1
29 FNAL/TTF #2,3
30 Front side Back side QuickTimeý Dz ÉtÉHÉg - JPEG êlí ÉvÉçÉOÉâÉÄ Ç Ç±ÇÃÉsÉNÉ`ÉÉǾå ÇÈÇ ÇÕïKóvÇ-ÇÅB QuickTimeý Dz ÉtÉHÉg - JPEG êlí ÉvÉçÉOÉâÉÄ Ç Ç±ÇÃÉsÉNÉ`ÉÉǾå ÇÈÇ ÇÕïKóvÇ-ÇÅB #1 AC/Phase Controller #2 HV Tank #3 Capacitor Bank #4 Capacitor Bank Crowber Unit Cabinet:107(W)x173(D)x183(H) Total Size : 525(W)x173(D)x183(H) unit= cm #5 Main SW Bouncer Circuit Clipper Circuit
31 Size: 2400(W) x 1220(D) x 1250(H) unit: mm
32 AC 400V 3 50Hz Line Cabinet#1 AC Line SW Phase Controller Conductor SW Front side Back side
33 Cabinet#2 Diode IR #CO HV Oil Filled Tank Front side
34 Cabinet#3 CT LT-100-S CT LEM #LT-4000-S Voltage/Current Monitor PS for IGBT SW driver circuit Capacitors Bank Front side Current Limiter 0.1 Ignitrons Back side
35 Cabinet#4 10 µf Diode 0.1 Front side Capacitor Bank 50 µh 0.07 Back side Ignitrons
36 Cabinet#5 Trigger Fan-out Box Bouncer C2 2000µF IGBT SW Bouncer 330µH Strip Line Front side SCR SW Clipper Circuit C3 Back side
37 FNAL/TTF 1000V 500V/div, 1ms/div FNAL/TTF 2 2kV/div( ), 20kV/div( ), 1ms/div (p-p)<1% 122kV 2.2ms 10pps AC 274kW -5%~1%236kW 236kW/274kW=86%
38 PPT/TTF TTF PPT(Pulse-PlasmatechnikGmbH) FNAL/TTF 8
39 12KV,300KW IGCT 4.5kV,2.2kAx7 SH 133kJ/m 3
40
41
42 FNAL/TTF 24% 36% 3.6(W)x1.6m(D)x2.2(H)m
43 5MW TH2104C
44 Accelerator Laboratory (1) (FNAL/TTF ) ( 20%) ( 24%) (~6.5t) (2) ( 20%)
45 Accelerator Laboratory STF (1) (2)
46 Accelerator Laboratory STF (1) µ (2)
47 Series 4.5kV IGBTs
48 Main tank(2.4x1.2m) Capacitor tank(2.4x1.2m) Power Supply Inverter Rack(19 )
49
50
51 80kV ( )
52 RECTIFIER TRANSFORMER AND FILTERS SCR REGULATOR ENERGY STORAGE/SWITCHING BOOST TRANSFORMER HV RECTIFIER AND FILTER NETWORK 4mH 400A X3 -HV -HV -HV 10ohm 20mH CØ BØ 3Ø (ON/OFF) 6 EACH AØ BØ CØ.03uF.03uF.05uF VMON 13.8KV 3Ø 50mH INPUT LINE CHOKE 5 th HARMONIC TRAP 7 th HARMONIC TRAP 13.8kV AØ 4mH 400A RTN 6 EACH C SHUNT-PEAK 2300V 20kHz 1:18(gain 1:60) EQUIPMENT CONTROL RACK (FEEDBACK) (I/O) HV OUTPUT 140kV Klystron Fault energy <10J RECTIFIER TRANSFORMER AND FILTERS SCR REGULATOR HIGH VOLTAGE CONVERTER/MODULATOR EQUIPMENT CONTROL RACK 2.3(W)x4.0(L)x2.1(H) m
53 50kV, 309A KEK 50kV, 32µF,65kJ RF 10 MW 50kV 309A 27.68µP 64.6% R=50kV/309A =162 C=1.7ms/(162 x20%)=52µf E=1/2x52µFx(50kV) 2 =65kL
54
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Overture 68W ( ) 0.1 (THD N) 20Hz 20kHz 4 68W 8 38W SPiKe TM (Self Peak Instantaneous Temperature ( Ke)) SOA (Safe Operating Area) SPiKe 2.0 V ( ) 92dB (min) SN 0.03 THD N IMD (SMTPE) 0.004 V CC 28V 4
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AC 120V TECCOR 4008L4 OR EUIVALENT NEUTRAL 2N2222 HEATER 25Ω 150Ω 1k 1N4004 2.5k 5W 5.6V R1 680k 390Ω 100µF LE 47k C1 0.01µF ZC ZC COMPARISON > R = R O e B (1/T 1/T O ) B = 3807 1µF THERM 30k YSI 44008
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213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造 ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい
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I 2009 c 2009 i 0 1 0.0................................... 1 0.1.............................. 3 0.2.............................. 5 1 7 1.1................................. 7 1.2..............................
) a + b = i + 6 b c = 6i j ) a = 0 b = c = 0 ) â = i + j 0 ˆb = 4) a b = b c = j + ) cos α = cos β = 6) a ˆb = b ĉ = 0 7) a b = 6i j b c = i + 6j + 8)
4 4 ) a + b = i + 6 b c = 6i j ) a = 0 b = c = 0 ) â = i + j 0 ˆb = 4) a b = b c = j + ) cos α = cos β = 6) a ˆb = b ĉ = 0 7) a b = 6i j b c = i + 6j + 8) a b a b = 6i j 4 b c b c 9) a b = 4 a b) c = 7
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D IEEJ Transactions on Industry Applications Vol.133 No.3 pp DOI: /ieejias DC-DC Principle of Surge Voltage of a Rectifier in I
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< kazuro.furukawa @ kek.jp > 1 2 Remote controlled automatic pattern arbitrator" Manual pattern generator" Recent typical operation. ~37Hz for KEKB LER (3.5GeV e+) ~12.5Hz for KEKB HER (8GeV e ) ~0.5Hz
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DS90LV019 DS90LV019 3.3V or 5V LVDS Driver/Receiver Literature Number: JAJS563 DS90LV019 LVDS 1 / DS90LV019 Low Voltage Differential Signaling (LVDS) 1 CMOS / DS90LV019 EIA-644 IEEE1596.3 (SCI LVDS) 2
0 s T (s) /CR () v 2 /v v 2 v = T (jω) = + jωcr (2) = + (ωcr) 2 ω v R=Ω C=F (b) db db( ) v 2 20 log 0 [db] (3) v R v C v 2 (a) ω (b) : v o v o =
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RC LC RC 5 2 RC 2 2. /sc sl ( ) s = jω j j ω [rad/s] : C L R sc sl R 2.2 T (s) ( T (s) = = /CR ) + scr s + /CR () 0 s T (s) /CR () v 2 /v v 2 v = T (jω) = + jωcr (2) = + (ωcr) 2 ω v R=Ω C=F (b) db db(
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NJU7704/05 C-MOS ( ) ±1.00.9µA DSP SOT-23-5 SC88A 2 DSP NJU7704/05F NJU7704/05F3 ±1.0 0.9µA typ ( ) 1.5 6.0(0.1 step) ( C ) ( ) Active "L" : NJU770****A Active "H" : NJU770****B Nch : NJU7704 C-MOS : C-MOS
INDEX PAGE 1. Evaluation Method 1 1. 測定回路 Measurement Circuits 3 (1) 静特性 待機電力特性 通電ドリフト特性 その他特性 Steady state, Standby power, Warm up voltage drift and
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AX-D701 4 7 LVT1438-001A 1 2 47 8 8 9 12 12 14 14 16 18 20 22 22 23 23 24 26 2728 2930 29 29 29 30 30 3133 31 31 344 343 36 37 37 37 38 38 40 40 41 41 42 42 43 44 44 4 4 462 4647 48 49 49 0 0 0 0 1 1 1
AX-V8000[DOM]
![AX-V8000[DOM]](/thumbs/91/106835731.jpg "AX-V8000[DOM]")
5 3 7 8 SPEAKERS SPEAKERS 2 INPUT MODE INPUT ATT SURROUND ON/OFF HTX ON / OFF DSP MODE LINE DIRECT SOUND SELECTOR REC SELECTOR ADJUST MENU SETUP MENU AUDIO/VIDEO CONTROL AMPLIFIER DOWN LEFT UP RIGHT SET
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TPS732xx µ µ µ µ µ DBV PACKAGE SOT23 (TOP VIEW) DCQ PACKAGE SOT223 (TOP VIEW) TAB IS GND 1 5 GND 2 1 2 3 4 5 EN 3 4 NR/FB Optional Optional GND EN NR/FB V TPS732xx DRB PACKAGE 3mm x 3mm SON (TOP VIEW)
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+ From Tradeoffs of Receive and Transmit Equalization Architectures, ICC006,Bryan Casper, Intel Labs Transmitter Receiver 0 magnitude (db) 0 0 30 40 50 60 0 4 frequency (GHz). Receiver Transmitter FFE
64 3 g=9.85 m/s 2 g=9.791 m/s 2 36, km ( ) 1 () 2 () m/s : : a) b) kg/m kg/m k
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BELLE TOP 12 1 3 2 BELLE 4 2.1 BELLE........................... 4 2.1.1......................... 4 2.1.2 B B........................ 7 2.1.3 B CP............... 8 2.2 BELLE...................... 9 2.3
OHO.dvi
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Ｊ表紙.dpt
250 16 IEC 60730 AA IEC 60065 1985 1989 1989 IEC 60085 1984 IEC 60127 1974 IEC 60161 1965 IEC60227-5 1997 450/750V IEC60245-4 1994 450/750V IEC 60317-0-1 1990 IEC60384-14 1993 14 IEC 60730 IEC61000-2-2
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DATA SHEET 品種名 パッケージコード QFH064-P-1414H 発行年月 : 2008 年 12 月 1 目次 概要.. 3 特長.. 3 用途.. 3 外形.. 3 構造...... 3 応用回路例.. 4 ブロック図.... 5 端子.. 6 絶対最大定格.. 8 動作電源電圧範囲.. 8 電気的特性. 9 電気的特性 ( 設計参考値 )... 10 技術資料.. 11 入出力部の回路図および端子機能の
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