Thick-GEM 06S2026A 22 3
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- がんま こうい
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1 Thick-GEM 06S2026A 22 3
2 (MWPC-Multi Wire Proportional Chamber) MPGD(Micro Pattern Gas Detector) MPGD MPGD MPGD MPGD GEM(Gas Electron Multiplier) GEM GEM GEM Thick-GEM GEM Thick-GEM 10 4 Thick-GEM
3 1 Introduction MWPC MPGD GEM MSGC µ-pic MicroMEGAS MPGD GEM(Gas Electron Multiplier) GEM GEM Thick-GEM X Thick-GEM ADC(Analog to Digital Converter) P P Ar-CO i
4 ii Thick-GEM Maxwell SV Garfield step size step size Thick-GEM P P Ar-CO
5 1 Introduction (MWPC-Multi Wire Proportional Chamber) (MPGD-Micro Pattern Gas Detector) MWPC MPGD MPGD 1.1 MWPC MWPC MWPC * MPGD MWPC MWPC (MPGD-Micro Pattern Gas Detector) MPGD MWPC *1 1
6 1 Introduction 2 MPGD MPGD GEM(Gas Electron Muliplier) MSGC(Micro Strip Gas Chamber) µ-pic(micro Pixel Chamber) MicroMEGAS(Micromesh Gaseous Detector) GEM 1.1 GEM GEM GEM GEM GEM GEM 1.1 GEM
7 1 Introduction MSGC 1.2 MSGC MSGC 10µm 100µm MSGC 1.2 MSGC µ-pic 1.3 µ-pic µ-pic MSGC MSGC µ-pic µ-pic 10 4 GEM 1.3 µ-pic
8 1 Introduction MicroMEGAS 1.4 MicroMEGAS MicroMEGAS ( ) MicroMesh( ) MicroMesh MicroMEGAS MicroMesh MicroMEGAS 1.4 MicroMEGAS 1.3 MPGD MPGD ILC(International Linear Collider) TPC(Time Projection Chamber) TPC 2 3 TPC MPGD TPC MPGD MeV γ γ X
9 1 Introduction 5 X 1.4 MPGD GEM GEM 50µm µm GEM(Thick-GEM) 50µm GEM Thick-GEM Thick-GEM 10 4
10 2 GEM(Gas Electron Multiplier) GEM 2.1 GEM GEM MPGD 1996 CERN F.Sauli GEM GEM 50µm 5µm 70µm 140µm GEM 300V GEM µm GEM GEM GEM * Thick-GEM 2.1 CERN GEM 2.2 CERN GEM 2.1 CERN GEM 2.2 CERN GEM *2 GEM 6
11 2 GEM(Gas Electron Multiplier) GEM MPGD GEM (1) 2.3 GEM GEM 2.3 (2) GEM 2.4 GEM 2.4
12 2 GEM(Gas Electron Multiplier) 8 (3) 2.5 GEM CERN GEM 2.7 GEM 2.7 GEM 50µm 70µm 100µm 150µm 30µm 50µm
13 2 GEM(Gas Electron Multiplier) 9 GEM 400µm Thick-GEM 10mm 0.5mm Thick-GEM 0.3mm 0.2mm 0.2mm 0.1mm 2.3 (X γ ) X X X X
14 2 GEM(Gas Electron Multiplier) keV 50keV E E θ 0.51MeV E = 0.51 [MeV ] (2.1) 1 cos θ /E[MeV ] (θ=0) θ = π/2 0.51MeV 0.6 5MeV MeV 2.9
15 2 GEM(Gas Electron Multiplier) hν 0 2mc 2 =1.02MeV 1.02MeV 1.02MeV 5MeV 15MeV ( ) ( ) 10kV/cm
16 2 GEM(Gas Electron Multiplier) 12 (2.2) dn N = αdx (2.2) α (first Townsend coefficient) (2.2) N(x) = N 0 e αx (2.3) N 0 N(x) x ( ) (2.3) x N(x) 2.11 GEM GEM GEM 2.11 GEM
17 2 GEM(Gas Electron Multiplier) GM α β 2.12 α β GM ( )
18 2 GEM(Gas Electron Multiplier) GM 6. GEM
19 3 Thick-GEM Thick-GEM Thick-GEM GEM Drift 3.1 GEM Induction Drift GEM GEM Induction 15
20 第 3 章 Thick-GEM の基礎特性の測定 図 3.2 カソードメッシュ 16 図 3.3 読み出しパッド カソードに図 3.2 のようなメッシュを用いることにより X 線が Drift 領域へ透過でき るようになっている また 読み出しパッドは図 3.3 のように５本のストリップによって できているが 本研究で用いる Thick-GEM のパターンの面積は小さく 一本のストリッ プのみで十分読み出し可能である したがって Thick-GEM のパターン真下のストリッ プ一本 (中央のストリップ) のみから読み出しを行う 図 3.4 チェンバーの全体図 図 3.5 ASD アンプ 図 3.4 は測定に用いたチェンバーである チェンバーは厚さ 5.0 mm のアルミ板で囲ま れており 容積は 21 cm 19 cm 4 cm となっている 強い強度の放射線を入射する 際は チェンバー上部の 10 cm 10 cm の薄いアルミ製の入射窓より放射線を入射する また 今回用いたチェンバーの底は二重になっており アンプを内蔵することによってノ イズを最小限に抑えることができる また 本研究では図 3.5 の ASD アンプを使用した ASD アンプは ATLAS 測定器の 検出器のひとつである TGC に取り付けられるアンプとして採用されている ASD アン プの増幅率は 0.8 V/pC である 信号の立ち上がりは 16 nsec と一定であり 入った電荷 量に比例した波高を出力する
21 3 Thick-GEM Thick-GEM 3.7 Thick-GEM 3.6 Thick-GEM GEM 0.3mm 0.1mm 3.7 Thick-GEM 3.2 P10 (Ar CH ) P5 (Ar CH ) Ar-CO 2 (Ar CO ) P10 P5 Ar-CO 2 50µm GEM P10 78 cc/min P5 94 cc/min Ar-CO 2 49 cc/min
22 3 Thick-GEM X 55 Fe 55 Fe K 55 Mn K X L K α X M K β X X Fe 55 Fe 5.9 kev X Ar K K (3.2keV) 2.7keV K Ar + (1) (2) X X 85:15 (1) Ar K 3.2keV 5.9keV
23 3 Thick-GEM 19 (2) X Ar (1) 3.2keV X X Ar + 2.7keV X X 3.4 GEM Induction GEM 3.5 Thick-GEM 3.11 Thick-GEM Thick-GEM Thick- GEM GEM
24 3 Thick-GEM 20 GEM GEM 3.11 Thick-GEM Thick-GEM Thick-GEM 3.12 Thick-GEM Inverter Discriminator Gate Generator Gate Discriminator Thick-GEM ADC 3.6 Gate Delay 3.12
25 3 Thick-GEM ADC(Analog to Digital Converter) ADC(Analog to Digital Converter) I R V V = IR I = dq dt V (3.1) V = R dq dt (3.2) ADC Gate Gate t V dt = RQ (3.3) Q = 1 R V dt (3.4) ADC Q Thick-GEM Gate 3.13 Gate 3.13 Thick-GEM
26 3 Thick-GEM 22 ADC ADC 3.14 P10 Thick-GEM V GEM =1520 [V] ADC X (mean ) 3.14 ADC ADC mean pedestal pedestal Clock Generator ADC mean pedestal mean
27 3 Thick-GEM (3.5) ( ) ( ) ( G) = ( ) (3.5) Ar W 26eV W 55 Fe X 5.9keV ( ) [ ] 55 Fe [pc] ASD ASD (3.5) G = ADC(mean pedestal ) (1ADC ) e ( ) ( ) (3.6) ASD 400 1ADC 0.25 pc µm Thick-GEM GEM 10 4 Thick-GEM (P10 P5 Ar-CO 2 ) Thick-GEM
28 3 Thick-GEM Drift Induction 0.5kV/cm 4.5kV/cm Thick-GEM Thick-GEM V GEM Thick-GEM ( ) V GEM 10V ADC P10 P5 Ar-CO P10 P10 V GEM =1460 V 1620 V 1630 V V GEM V GEM P10 V GEM 3.15 V GEM =1560 V 10 4
29 3 Thick-GEM P5 P5 V GEM =1350 V 1450 V 1460 V V GEM V GEM P5 V GEM 3.16 V GEM =1320 V 10 4 P5
30 3 Thick-GEM Ar-CO 2 Ar-CO 2 V GEM =1880 V 1930 V 1940 V V GEM V GEM Ar-CO 2 V GEM 3.17 Ar-CO
31 3 Thick-GEM P5 Drift Induction 0.5 kv/cm 4.5 kv/cm V GEM 1400 V 3.18 ( ) (300 ) Thick-GEM
32 4 Thick-GEM 400µm GEM( Thick-GEM) Maxwell SV Garfield 4.1 Maxwell SV GEM Maxwell SV Maxwell Ansoft *3 Maxwell 3D Maxwell SV 4.1 Thick-GEM 0.4mm Thick-GEM 0.3mm 35µm Drift Induction 1.0mm Drift 0.5 kv/cm Induction 4.5 kv/cm 0.1mm *3 ( ) ( ) 28
33 4 Thick-GEM Thick-GEM 4.2 Garfield Garfield CERN ( ) Garfield Heed Magboltz Garfield Maxwell Garfield step
34 4 Thick-GEM step size Garfield step( 4.2) (step size) step size step size 4.2 step 1step 1. 1step step 3. step step step size step size 1step step size
35 4 Thick-GEM 31 step size step Garfield step 1000 Thick- GEM 400µm 1000 step step step size step size P5 ( V GEM ) 1500 V 4.3 step size step step size step
36 4 Thick-GEM step size step step size 3µm step step size 5µm 4.3 Thick-GEM 4.1 Thick-GEM Thick-GEM Thick-GEM 0.1mm mm 0.05mm Thick-GEM cube etching 0.1mm 4.5 Thick-GEM cube 0.1mm 4.6 cube etching 0.07mm 4.6 Thick-GEM cube 0.07mm cube etching 0.1mm 0.03mm
37 4 Thick-GEM cube etching 0.05mm 4.7 Thick-GEM cube 0.05mm cube etching 0.1mm 0.05mm 4.8 slash etching Thick-GEM 0.1mm 4.9 slash etching Thick-GEM 0.1mm 0.07mm 0.07mm
38 4 Thick-GEM Maxwell SV Thick-GEM Thick-GEM µm Thick-GEM V GEM =1600 V 4.10 cube etching 0.1mm 30 kv/cm 10 kv/cm 40 kv/cm
39 4 Thick-GEM cube etching 0.07mm 4.12 cube etching 0.05mm kv/cm cube etching 0.1mm kv/cm cube etching
40 4 Thick-GEM slash etching slash etching kv/cm kv/cm cube etching 0.07mm
41 4 Thick-GEM Garfield (P5 P10 Ar-CO 2 ) cube etching slash etching Thick-GEM ( V GEM ) P P10 cube etching V GEM 4.15 cube etching V GEM 0.07mm cube etching Thick-GEM 0.05mm cube etching Thick-GEM 0.1mm cube etching Thick-GEM
42 4 Thick-GEM P10 slash etching V GEM 4.16 slash etching V GEM slash etching 1 Thick-GEM 10 slash etching 2 Thick-GEM
43 4 Thick-GEM P P5 cube etching V GEM 4.17 P5 0.05mm cube etching Thick-GEM 4.18 P5 slash etching V GEM 4.18 slash etching 1 P5 slash etching 2 1/2
44 4 Thick-GEM Ar-CO Ar-CO 2 cube etching V GEM 4.19 Ar-CO mm cube etching Thick-GEM 4.20 Ar-CO 2 slash etching V GEM 4.20 slash etching 2 Thick-GEM
45 5 5.1 ( ) V GEM 5.1 V GEM P10 V GEM =1630 V P5 V GEM =1460 V Ar-CO 2 V GEM =1940 V P10 P Ar-CO P10 P5 Thick-GEM 50µm GEM Ar-CO 2 Thick-GEM P10 P Thick-GEM Ar-CO
46 5 42 V GEM =1940 V Thick-GEM P10 P5 Thick-GEM P10 P Thick-GEM 300 Thick-GEM 400µm slash etching 1 Thick-GEM P10 Ar-CO 2 slash etching 2 cube etching 0.07mm Thick-GEM slash etching 2 cube etching 0.07mm P5 cube etching 0.05mm 0.1mm 3.7 Thick-GEM Thick-GEM
47 µm Thick-GEM Thick-GEM V GEM P10 P Ar-CO Thick-GEM Maxwell SV Garfield Thick-GEM Thick-GEM 6.2 Thick-GEM Thick-GEM Thick-GEM Thick-GEM 43
48 44 [1] GEM (2008) [2] TGEM (2009) [3] GEM (2006) [4] GEM (2008) [5] GEM (2008) [6] SLHC MicroMEGAS (2008) [7] F.Sauli PRINCEPLES OF OPERATION OF MULTIWIRE PROPORTIONAL AND DRIFT CHAMBERS (1977) [8] Ansoft Maxwell SV Getting Started:A 2D Electrostatic Problem (2002) [9] Garfield - simulation of gaseous detectors [10] Garfield isobe/tips/garfield/ [11] The Gas Detectors Development Group in CERN [12] Express [13] F.Sauli DEVELOPMENTS AND APPLICATIONS OF THE GAS ELEC- TRON MULTIPLIER GEM [14] (2002)
49
1 5 1.1................................ 5 1.2 MPGD.......................................... 6 1.2.1 GEM...................................... 6 1.2.2
19 GEM 2 2008/3/13 1 5 1.1................................ 5 1.2 MPGD.......................................... 6 1.2.1 GEM...................................... 6 1.2.2 MICROMEGAS................................
25 3 4
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W 1983 W ± Z cm 10 cm 50 MeV TAC - ADC ADC [ (µs)] = [] (2.08 ± 0.36) 10 6 s 3 χ µ + µ 8 = (1.20 ± 0.1) 10 5 (Ge
![W 1983 W ± Z cm 10 cm 50 MeV TAC - ADC ADC [ (µs)] = [] (2.08 ± 0.36) 10 6 s 3 χ µ + µ 8 = (1.20 ± 0.1) 10 5 (Ge](/thumbs/91/105929864.jpg "W 1983 W ± Z cm 10 cm 50 MeV TAC - ADC ADC [ (µs)] = [] (2.08 ± 0.36) 10 6 s 3 χ µ + µ 8 = (1.20 ± 0.1) 10 5 (Ge")
22 2 24 W 1983 W ± Z 0 3 10 cm 10 cm 50 MeV TAC - ADC 65000 18 ADC [ (µs)] = 0.0207[] 0.0151 (2.08 ± 0.36) 10 6 s 3 χ 2 2 1 20 µ + µ 8 = (1.20 ± 0.1) 10 5 (GeV) 2 G µ ( hc) 3 1 1 7 1.1.............................
Mｏｔｔ散乱によるParity対称性の破れを検証
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SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT
![SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT](/thumbs/92/110123587.jpg "SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT")
3 SPECT SJ SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT 9ch MPPC array 3 3 9 3 3 9.mm(sigma) . SPECT..................................................................3............
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GEM を用いた検出器の開発 千葉研究室修士 2 年 杉山史憲 発表の流れ 研究目的 GEMを用いた中性子画像検出器の原理 基本特性 ビームテスト 今後の実験 研究目的 1. 中性子検出の必要性 2. 中性子捕獲 3. 現在の中性子検出器 中性子検出の必要性 中性子の特徴 - スピンが 1/2 - 電荷がゼロ X 線で見た構造 中性子で見た構造 構造解析 窒素 炭素 酸素 水素たんぱく質 ( ミオグロビン
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21 PET 06S2037G 2010 3 1 3 1.1 PET..................................... 3 1.1.1......................................... 3 1.1.2 PET................................. 4 1.2........................................
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1 3 1.1.......................... 3 1............................... 3 1.3....................... 5 1.4.......................... 6 1.5........................ 7 8.1......................... 8..............................
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- 28 2 15 - γ 1929 γ - SI γ 137 Cs 662 kev γ NaI active target NaI γ NaI 2 NaI γ NaI(Tl) γ 2 NaI γ γ 10 3 4 γ 1 3 2 γ 5 2.1..................................... 5 2.1.1.................... 5 2.1.2..............................
1 (Berry,1975) 2-6 p (S πr 2 )p πr 2 p 2πRγ p p = 2γ R (2.5).1-1 : : : : ( ).2 α, β α, β () X S = X X α X β (.1) 1 2
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第86回日本感染症学会総会学術集会後抄録（I）
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cm λ λ = h/p p ( ) λ = cm E pc [ev] 2.2 quark lepton u d c s t b e 1 3e electric charge e color charge red blue green qq
![cm λ λ = h/p p ( ) λ = cm E pc [ev] 2.2 quark lepton u d c s t b e 1 3e electric charge e color charge red blue green qq](/thumbs/89/98710373.jpg "cm λ λ = h/p p ( ) λ = cm E pc [ev] 2.2 quark lepton u d c s t b e 1 3e electric charge e color charge red blue green qq")
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21 2 27 Bethe-Bloch Bethe-Bloch (stopping range) Bethe-Bloch FNAL (Fermi National Accelerator Laboratory) - (SciBooNE ) SciBooNE Bethe-Bloch FNAL - (SciBooNE ) Bethe-Bloch 1 0.1..............................
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スピントロニクスの基礎 サンプルページ この本の定価 判型などは, 以下の URL からご覧いただけます. http://www.morikita.co.jp/books/mid/077461 このサンプルページの内容は, 初版 1 刷発行時のものです. i 1 2 ii 3 5 4 AMR (anisotropic magnetoresistance effect) GMR (giant magnetoresistance
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II No.01 [n/2] [1]H n (x) H n (x) = ( 1) r n! r!(n 2r)! (2x)n 2r. r=0 [2]H n (x) n,, H n ( x) = ( 1) n H n (x). [3] H n (x) = ( 1) n dn x2 e dx n e x2
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素粒子物理学２ 素粒子物理学序論B 2010年度講義第2回
素粒子物理学２ 素粒子物理学序論B 2010年度講義第2回 =1.055 10 34 J sec =6.582 10 22 MeV sec c = 197.33 10 15 MeV m = c = c =1 1 m p = c(mev m) 938M ev = 197 10 15 (m) 938 =0.2 10 13 (cm) 1 m p = (MeV sec) 938M ev = 6.58
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