9-65; ev ; / µ µ MAX665S//X PAT MAX665SESA MAX665ESA MAX665XESA TEMP. ANGE -4 C to 85 C -4 C to 85 C -4 C to 85 C PIN- PACKAGE 8 SO 8 SO 8 SO CELL COUNT 2 3 4 TOP IEW () I.C. (B4P) 8 I.C. [B3P] B4P B3P B2P PKN 2 3 4 MAX665S MAX665 MAX665X 7 6 5 B2P BP BN MAX665X BP SO (-) PKN BN NOTES: I.C. = INTENAL CONNECTION. MAKE NO CONNECTIONS TO THIS PIN. ( ) AE FO THE MAX665X. [ ] AE FO THE MAX665 AND MAX665X. Maxim Integrated Products
MAX665S//X ABSOLUTE MAXIMUM ATINGS B4P to PKN (MAX665X)...-.3 to 24 B3P to PKN (MAX665)...-.3 to 8 B2P to PKN (MAX665S)...-.3 to 2 BP to PKN, B2P to BP, B3P to B2P, B4P to B3P...-.3 to 6 to PKN, to BN MAX665S...-.3 to ( B2P.3) MAX665...-.3 to ( B3P.3) MAX665X...-.3 to ( B4P.3) B2P to BN (MAX665S)...-.3 to 2 B3P to BN (MAX665)...-.3 to 8 B4P to BN (MAX665X)...-.3 to 24 Continuous Power Dissipation (T A = 7 C) 8-Pin SO (derate 5.88mW/ C above 7 C)...47mW Operating Temperature ange...-4 C to 85 C Junction Temperature...5 C Temperature ange...-65 C to 5 C Lead Temperature (soldering, s)...3 C Stresses beyond those listed under Absolute Maximum atings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTICAL CHAACTEISTICS T A = C to 85 C PAAMETE B2P oltage ange B3P oltage ange B4P oltage ange Overvoltage Threshold Overvoltage Hysteresis Undervoltage Threshold Undervoltage ESET Overcurrent Sense Threshold Overcurrent Hysteresis Overvoltage/Undervoltage Delay Overcurrent Detection Delay, Output oltage Output oltage (te 2) Output oltage Output oltage, Output Source Current Output Sink Current Output Sink Current Overcurrent Sampling - t ON Overcurrent Sampling - t OFF Input Bias Current (te 3) SYMBOL B2P B3P B4P O CE U E CH CH2 t U t IO L L I OH I OL I OL t ON t OFF I BIAS CONDITIONS MAX665S MAX665 MAX665X Cell voltage rising BN - PKN (te ) I OUT = µa MAX665X, I OUT = µa, B4P = 24, BN = m I = -µa I = -µa = PKN, = BN MAX665S MAX665 MAX665X MIN TYP MAX 4 4 5 4 2 4.26 4.3 4.34. 2.4 2.5 2.6 8 3 ±2 ± ±3 5 B2P -.8 B2P -.54 B3P -.8 B3P -.54 B4P -.8 B4P -.54 7 2 PKN. BN. UNITS m m m = PKN 3..5 2 ma = BN 3..5 2 µa PKN = ±3m 8.2 ms PKN = ±3m 35 ms MAX665SESA, BP = 4 3 na MAX665ESA, BP = 4, B2P = 8 3 MAX665XESA, BP = 4, B2P = 8, na 3 B3P = 2 2 ms ms ma 2
ELECTICAL CHAACTEISTICS (continued) T A = C to 85 C Supply Current PAAMETE Input Bias Current Matching Standby Mode Current Undervoltage Lockout ELECTICAL CHAACTEISTICS T A = -4 C to 85 C PAAMETE B2P oltage ange B3P oltage ange B4P oltage ange Overvoltage Threshold Undervoltage Threshold Undervoltage ESET Overcurrent Sense Threshold, Output oltage SYMBOL I BIAS I CC I LP ULO SYMBOL B2P B3P B4P O U E CH (tes 3, 4) (te 5) = = low MAX665S MAX665 MAX665X Cell voltage rising BN - PKN I OUT = µa CONDITIONS CONDITIONS MAX665S MAX665 MAX665X MIN TYP MAX ±5 6.7 4. 4.7 MIN TYP MAX 4 4 5 4 2 4.2 4.24 2.4 2.6 3 ±8 ±32 B2P - 2 B2P -.5 B3P - 2 B3P -.5 B4P - 2 B4P -.5 UNITS pa µa µa UNITS m m MAX665S//X Output oltage (te 2) MAX665X, I OUT = µa, B4P = 24, BN = m 2 Output oltage L I = -µa PKN. Output oltage L I = -µa BN., Output Source Current I OH = PKN, = BN ma Output Sink Current I OL = PKN.3.2 ma Output Sink Current I OL = BN.3.2 µa MAX665SESA, BP = 4 Input Bias Current (te 3) I BIAS MAX665ESA, BP = 4, B2P = 8 MAX665XESA, BP = 4, B2P = 8, B3P = 2 na Supply Current Standby Mode Current Undervoltage Lockout I CC I LP ULO 3 µa (te 5) 2 µa = = low 4.7 te : Applies to the differential voltage measured on any cell. te 2: is internally clamped to a maximum of 2 to protect the external MOSFET ( GS ). te 3: Guaranteed by design. te 4: The input bias matching between cells is measured with a 4 voltage between cells. te 5: At least one cell is < U. te 6: Specifications to -4 C are guaranteed by design, not production tested. 3
MAX665S//X (T A = C, unless otherwise noted.) THESHOLD OLTAGE () 4.34 4.3 4.26 4.22 4.8 OEOLTAGE THESHOLD vs. TEMPEATUE HYSTEESIS MAX665 toc UNDEOLTAGE THESHOLD () 2.5 2.5 2.49 2.48 2.47 UNDEOLTAGE THESHOLD vs. TEMPEATUE MAX665 toc2 OECUENT THESHOLD (m) 5 2 249 246 243 OECUENT THESHOLD vs. TEMPEATUE MAX665 toc3 4.4 BN - PKN -4-5 35 6 85 TEMPEATUE ( C) 2.46 BN - PKN 24-4 -5 35 6 85 TEMPEATUE ( C) BN - PKN -4-5 35 6 85 TEMPEATUE ( C) OEDISCHAGE THESHOLD (m) -24-242 -244-246 -248 - -2-4 -6-8 -26 OEDISCHAGE THESHOLD vs. TEMPEATUE BN - PKN -4-5 35 6 85 TEMPEATUE ( C) MAX665 toc4 SUPPLY CUENT (µa) 8. 7.5 7. 6.5 SUPPLY CUENT vs. TEMPEATUE 6. -4-2 2 4 6 8 TEMPEATUE ( C) MAX665 toc5 STANDBY CUENT (µa)..9.8.7.6.5 STANDBY MODE CUENT vs. TEMPEATUE -4-2 2 4 6 8 TEMPEATUE ( C) MAX665 toc6 QUIESCENT CUENT (µa) 8. 7.6 7.2 6.8 6.4 QUIESCENT CUENT vs. SUPPLY OLTAGE MAX665 toc7 2/div CONTINUOUS OECHAGE CONDITION MAX665 toc8 2/div CONTINUOUS OEDISCHAGE CONDITION MAX665 toc9 6. NOMALIZED TO ONE CELL 2.5 3. 3.5 4. 4.5 5. SUPPLY OLTAGE PE CELL () 5ms/div 5ms/div 4
MAX665S MAX665, 8 I.C. B4P 2 2 3 3 MAX665X 2 3 4 4 4 PKN MAX665S//X 5 5 5 BN 6 6 6 BP 7 7 7 B2P 8 8 B3P CHAGE OECUENT DISCHAGE OECUENT *Assuming no load on or. OEOLTAGE UNDEOLTAGE Gated Gated Gated GATE CLOCKED Yes Yes MAX SUPPLY CUENT* (µa) 5
MAX665S//X CHAGE OECUENT DISCHAGE OECUENT *Assuming no load on or. OEOLTAGE UNDEOLTAGE Gated Gated GATE CLOCKED Gated Gated Yes Yes MAX SUPPLY CUENT* (µa) POWE ON POWE ON SLEEP = = CHAGE = SUPPLIES STAT ON DY = COUNTE = = 2.4ms = = STAT-UP ZCHK = = 6µs STAT-UP MEASUE = = 64µs WAIT FO BLANK = = = 2.4ms CHAGE = U = O = U = O = U = O = U = O = NOMAL = = O = = U = = 2.4ms 2.4ms 2.4ms 96ms 96ms 96ms 6.4ms 6.4ms 6.4ms CHAGE = CHAGE = CHAGE = CHAGE = O & U = = 2.4ms NOMAL PULSE OFF = * = * O PULSE OFF = = U PULSE OFF = * = * O & U PULSE OFF = = 96ms NOMAL PULSE ON = = O PULSE ON = = U PULSE ON = = O & U PULSE ON = = NOMAL ZCHK = = O ZCHK = = U ZCHK = = 6µs 6µs 6µs SHOT = SHOT = SHOT = SHOT = O & U 6.4ms ZCHK = 6µs = NOMAL MEASUE = = O MEASUE = = U MEASUE = = O & U MEASUE = = 64µs 64µs 64µs 64µs * = FO OECUENT FAULT; OTHEWISE 6
µ µ MAX665S//X µ B4P: I 4 = 3I CB 4 / = 4 4 / = BAT4 B3P: I 3 = I 3P I 4 = BAT3 I 3P I CB = 3 / I 3P = 3 / - 4 / I 3 = I 4 ( 3-4 ) / = (3 4 3 ) / B2P: I 2 = I 2P I 3 = BAT2 I 2P I CB = 2 / I 2P = 2 / - 4 / I 2 = I 3 2 / - 4 / = I 4 ( 3-4 ) / ( 2-4 ) / = (2 4 3 2 ) / BP: I = I P I 2 = BAT I P I CB = / I P = / - 4 / I = I 2 / - 4 / = I 4 ( 3-4 ) / ( 2-4 ) / ( - 4 ) / = ( 4 3 2 ) / 7
MAX665S//X 4 3 2 BP4 BP3 I 3 BP2 I 2 BP I I 4 I 3P I 2P I P I CB 4 BP 2 I CB 4 B2P I CB 4 B3P 3 4 DUAL N-CHANNEL MOSFETs IF9956 FDS699A TYPICAL DS(ON) (Ω)..8 Si9936.5 I.C. MAX GS () ±2 ±2 ±2 2 3 4 8 I.C. PACK 7 B2P CELL 2 6 BP CELL 5 BN MAX665S OEDISCHAGE POTECTION IF7 2 OECHAGE POTECTION PACK- IF7 3 4 PKN 8
PACK OEDISCHAGE POTECTION CELL 3 CELL 2 CELL 8 7 6 5 IF7 2 I.C. B3P B2P BP BN MAX665 PACK OEDISCHAGE POTECTION CELL 4 CELL 3 CELL 2 CELL 8 7 6 5 IF7 2 B4P B3P B2P BP BN MAX665X MAX665S//X IF7 IF7 OECHAGE POTECTION 3 OECHAGE POTECTION 3 4 PKN PACK- PACK- 4 PKN 9
MAX665S//X SOICN.EPS
NOTES MAX665S//X
MAX665S//X NOTES 2 Maxim Integrated Products, 2 San Gabriel Drive, Sunnyvale, CA 9486 48-737-76 2 Maxim Integrated Products is a registered trademark of Maxim Integrated Products.