Bipolar Analog Integrated Circuits 3 V IC µpc275tb, µpc27tb IC3 V V NESAT ft = 2 GHz IC VCC = 2.73.3 V VCC = 3.3 V µpc275tbfu = 2.7 GHz TYP. @3 db µpc27tbfu = 1.5 GHz TYP. @3 db µpc275tbisl = 38 db TYP. @f = 5 MHz µpc27tbisl = 5 db TYP. @f = 5 MHz µpc275tbgp = 12 db TYP. @f = 5 MHz µpc27tbgp = 19 db TYP. @f = 5 MHz µpc275tbpo(sat) = 1 dbm TYP. @f = 5 MHz µpc27tbpo(sat) = dbm TYP. @f = 5 MHz 2.5.9 mm 1.5 GHz 2.5 GHz µpc275tb 8 MHz 9 MHz µpc27tb µpc275tb-e3 C1Q µpc27tb-e3 C1R 8 mm 123 3 k µpg275tb, µpc27tb PU3JJ1VDS 1 P11511JJ3VDS November 23 CP(K) Printed in Japan NEC Compound Semiconductor Devices 199, 23
(Top View) (Bottom View) 3 2 1 C1Q µ PC275TB 5 5 3 2 1 1 INPUT 2 GND 3 GND OUTPUT 5 GND VCC TA = 25 C,, ZS = ZL = 5 Ω fu PO(sat) GP NF ICC GHz dbm db db ma µpc275t 2.7 1. 12. 7.5 C1Q µpc275tb µpc27t 1.5 19. 7.5 C1R µpc27tb µpc277t 7. 12 3.3 C1S µpc277tb µpc278t.21.5 3.5 19 2.8. C1T µpc278tb µpc279t 2.9. 1.. C1U µpc279tb TYP. RX DEMOD. I Q SW PSCPLL PLL I TX PA Q µ PC275TB, 27TB 2 PU3JJ1VDS
V V 1 INPUT.87 5 Ω 5 Ω.82 DC 2 3 GND 5 OUTPUT 1.95 5 Ω 2.5 5 Ω DC VCC 2.73.3 µpc275tb, µpc27tb PU3JJ1VDS 3
VCC TA = 25 C. V Total ICC TA = 25 C 1 ma PD TA = 85 C 27 mw TA 85 C Tstg 5515 C Pin TA = 25 C dbm 5 5 1. mm MIN. TYP. MAX. VCC 2.7 3. 3.3 V TA = 25 C,, ZS = ZL = 5 Ω µpc275tb µpc27tb MIN. TYP. MAX. MIN. TYP. MAX. ICC 7.5. 7.5. ma GP f = 5 MHz 9 12 1 1 19 21 db NF f = 5 MHz. 7.5. 5.5 db fu.1 GHz3 db 2.3 2.7 1.1 1.5 GHz ISL f = 5 MHz 33 38 5 db RLin f = 5 MHz 8 11 13 db RLout f = 5 MHz 2.5 5.5 5.5 8.5 db PO(sat) f = 5 MHz, Pin = dbm 1 3 dbm PU3JJ1VDS
TA = 25 C,, ZS = ZL = 5 Ω µpc275tb µpc27tb ICC.5.5 ma GP, f = 1. GHz 12. 18.5 db, f = 2. GHz, f =.5 GHz 11. 7. 1. NF, f = 1. GHz 5.5.2 db, f = 2. GHz, f =.5 GHz 5.7 8. fu,.1 GHz3 db 1.1 GHz ISL, f = 1. GHz 33 38 db, f = 2. GHz, f =.5 GHz 3 35 37 RLin, f = 1. GHz 13.. db, f = 2. GHz, f =.5 GHz 1..5. RLout, f = 1. GHz.5 8.5 db, f = 2. GHz, f =.5 GHz 8.5. 9.5 PO(sat), f = 1. GHz, Pin = dbm 2.5 1. dbm, f = 2. GHz, Pin = dbm, f =.5 GHz, Pin = dbm 3.5 11. 8. 3 IM3, Pout = dbm, f1 = 5 MHz, f2 = 52 MHz, Pout = 2 dbm, f1 = 5 MHz, f2 = 52 MHz, Pout = dbm, f1 = 1 MHz, f2 = 1 2 MHz 3. 31. 2. 2. 37. dbc PU3JJ1VDS 5
VCC 1 pf C3 5Ω IN C1 1 pf 1 C2 1 pf 5Ω OUT 2, 3, 5 VCC 1 pf 1 pf C3 C 5Ω IN C1 1 C C5 1 pf 1 pf 1 pf 1 C2 1 pf 5Ω OUT 2, 3, 5 R1 52Ω R1C5 2, 3, 5 VCC VCC1 pf VCCVCCGND Ω DC 5 Ω DC MHz1 pf 1 pf MHz MHz fc = 1/2 π RC PU3JJ1VDS
AMP-2 Top View 1 2 3 C1Q IN C C OUT 5 µ PC275TB C VCC C 1 pf 133. mm35 µm 2 3 IC MMICP1197J PU3JJ1VDS 7
TA = 25 C µpc275tb vs. vs. 8 8 ICCmA ICCmA 2 2 1 2 3 2 2 8 VCCV TA C 15 vs. 15 vs. TA = C NFdB 9 8 7 5 GPdB 5 GP 5 NF.1.3 1. 3. GPdB 5.1 TA = 85 C TA = 25 C.3 1. 3. fghz fghz ISLdB 2 3 5 vs. RLindB RLoutdB 2 3 vs. RLout RLin.1.3 1. 3. fghz.1.3 1. 3. fghz 8 PU3JJ1VDS
µpc275tb PoutdBm 2 3 vs. f = 5 MHz PoutdBm 2 3 f = 5 MHz TA = C vs. TA = 25 C TA = 85 C TA = C TA = 25 C TA = 85 C 5 3 2 5 3 2 PindBm PindBm PoutdBm 2 3 vs. f = 1. GHz PoutdBm 2 3 vs. f = 2. GHz 5 3 2 5 3 2 PindBm PindBm PO(sat)dBm 5 5 vs. Pin = dbm IM3dBc 5 3 2 3 vs. f1 = 5 MHz f2 = 52 MHz 15.1.3 1. 3. 3 25 2 15 5 fghz PO(each)dBm PU3JJ1VDS 9
1..37.13 TA = 25 C, µpc275tb S11-.1 ANGLE OF REFLECTION COEFFICIENT IN DEGREES WAVELENGTHS TOWARD GENERATOR.9.2.8.9.1.3.8 WAVELENGTHS TOWARD LOAD.2.7..7.3.. -.1.5 15.1.5.2.2..3..7..3 13.8.2 12.9.1.1.2.3..5...7. 1.5.8.11.39.9.12.38..7.8.9 1. RESISTANCE COMPONENT R Zo 9.13.37.2..2.2...1.3 8 1. 1. 1. 2.....8.8.8 1. 1. 1. 1..15.35 7 1..1.3 3. 2..17.33. 5.32.18 3..31.19..3 3.2 2 5.29 2 2 2 5 5.21-2.28 -.22.22.27.28.2.2.23.23.25.25.2.27.2.. -15.3..8 3.. -3.29.21.5.5 -. -.2..3...7-13.5..2 1. 2. -5.18.19.31.3.7.32.2.8-12.9.1-1...8.11.39 -.9.12.38 1. -9.37.13 JX Zo POSITIVE REACTANCE COMPONENT NEGATIVE REACTANCE COMPONENT 2. G.1 G.5 G 1. G JX Zo -8.3.1 1..15.35-7.1.3 -.33.17 S22-.1 ANGLE OF REFLECTION COEFFICIENT IN DEGREES WAVELENGTHS TOWARD GENERATOR.9.2.8.9.1.3.8 WAVELENGTHS TOWARD LOAD.2.7..7.3.. -.5.5...7.3.8.2.9.1...11.39.12.38.13.37.1.3.15.35.1.3.17.33.32.18.31.19.3.2.29.21.28.22.22.27.28.2.2.23.23.25.25.2.27.2.. -15.29.21.5.5 -.2.3...7-13.18.19.31.3.32.2.8-12.9.1-1...11.39 -.12.38-9 1..1 15.1.2.2.3. 13 JX Zo.5 POSITIVE REACTANCE COMPONENT 12.1.2.3. 1 9 8 7 5 3 2-2 -.3 NEGATIVE REACTANCE COMPONENT..7.5.8..7.9.8.9 1. RESISTANCE COMPONENT R Zo.2..2.2......8 1. 2. G.8.8 1. 1. 1. 1. 1. 1. 2. 1. 3. 2. 1. G..1 G.5 G 3.. 2 5 2 2 5 5 JX Zo..8 3.. -3. -..5..2 1. 2. -5.7.8.9 1. -8.3.1 1..15.35-7.1.3 -.33.17 PU3JJ1VDS
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TA = 25 C µpc27tb vs. vs. 8 8 ICCmA ICCmA 2 2 1 2 3 VCCV 2 2 8 TA C vs. vs. NFdB 7 5 3 GPdB 22 2 18 1 1 12 8 GP NF.1 3.3 V.3 1. 3. GPdB 22 21 TA = C 2 19 TA = 25 C 18 17 TA = 85 C 1 15 1 13 12.1.3 1. 3. fghz fghz vs. vs. ISLdB 2 RLin db RLoutdB 2 RLout RLin 8 3.1.3 1. 3..1.3 1. 3. 12 PU3JJ1VDS
µpc27tb vs. vs. PoutdBm 2 3 f = 5 MHz PoutdBm 2 3 f = 1. GHz 5 3 2 5 3 2 PindBm PindBm vs. vs. PoutdBm 2 3 f = 5 MHz TA = C TA = 25 C TA = C TA = 85 C TA = 85 C TA = 25 C PoutdBm 2 3 f = 1. GHz TA = 25 C TA = C TA = 85 C TA = 85 C TA = C TA = 25 C 5 3 2 5 3 2 PindBm PindBm PO(sat)dBm 5 5 vs. VCC = 2.73.3 V Pin = dbm Pin = dbm 15.1.3 1. 3. fghz IM3dBc 5 3 2 3 3 vs. f1 = 5 MHz f2 = 52 MHz 25 2 15 5 PO(each)dBm PU3JJ1VDS 13
1..37.13 TA = 25 C, µpc27tb S11-.1 ANGLE OF REFLECTION COEFFICIENT IN DEGREES WAVELENGTHS TOWARD GENERATOR.9.2.8.9.1.3.8 WAVELENGTHS TOWARD LOAD.2.7..7.3.. -.1.5 15.1.5.2.2..3..7..3 13.8.2 12.9.1.1.2.3..5...7. 1.5.8.11.39.9.12.38..7.8.9 1. RESISTANCE COMPONENT R Zo 9.13.37.2..2.2...1.3 8 1. 1. 1. 2.....8.8.8 1. 1. 1. 1..15.35 7 1..1.3 3. 2..17.33. 5.32.18 3..31.19..3 3.2 2 5.29 2 2 2 5 5.21-2.28 -.22.22.27.28.2.2.23.23.25.25.2.27.2.. -15.3..8 3.. -3.29.21.5.5 -. -.2..3...7-13.5..2 1. 2. -5.18.19.31.3.7.32.2.8-12.9.1-1...8.11.39 -.9.12.38 1. -9.37.13 JX Zo POSITIVE REACTANCE COMPONENT NEGATIVE REACTANCE COMPONENT.1 G.5 G 1. G 1.5 G JX Zo -8.3.1 1..15.35-7.1.3 -.33.17 S22-.1 ANGLE OF REFLECTION COEFFICIENT IN DEGREES WAVELENGTHS TOWARD GENERATOR.9.2.8.9.1.3.8 WAVELENGTHS TOWARD LOAD.2.7..7.3.. -.5.5...7.3.8.2.9.1...11.39.12.38.13.37.1.3.15.35.1.3.17.33.32.18.31.19.3.2.29.21.28.22.22.27.28.2.2.23.23.25.25.2.27.2.. -15.29.21.5.5 -.2.3...7-13.18.19.31.3.32.2.8-12.9.1-1...11.39 -.12.38-9 1..1 15.1.2.2.3. 13 JX Zo.5 POSITIVE REACTANCE COMPONENT 12.1.2.3. 1 9 8 7 5 3 2-2 -.3 NEGATIVE REACTANCE COMPONENT..7.5.8..7.9.8.9 1. RESISTANCE COMPONENT R Zo.2..2.2......8 1. 1.5 G.8.8 1. 1. 1. 1. 1. 1. 2. 1..1 G 1. G 3. 2..5 G. 3.. 2 5 2 2 5 5 JX Zo..8 3.. -3. -..5..2 1. 2. -5.7.8.9 1. -8.3.1 1..15.35-7.1.3 -.33.17 1 PU3JJ1VDS
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mm 2.1±.1 5±.1 2.±.2 1.3.9±.1.5.5.7.1.15 +.1.2 +.1.5.5.1 MIN. 1 PU3JJ1VDS
1 2 3VCC DC 2 C 22 C 1218 C 12±3 3.2%Wt. VPS 215 C 2 C 25 1215 C 3 3.2%Wt. 2 C 12 C 1.2%Wt. 35 C 3.2%Wt. IR2 VP215 WS2 HS35 PU3JJ1VDS 17
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