ILC :SOFIST 2 29 1 18
SOI ILC SOI SOFIST SOFISTver.1 SOFISTver.1 SOFIST SOFISTver.1 S/N BPW
1 1 4 1.1............... 4 1.1.1... 4 1.1.2... 5 1.2 ILC... 6 1.2.1 ILC... 6 1.2.2 ILD........................... 7 1.2.3........................... 8 1.3............. 8 1.4 SOI(Silicon On Insulator)... 9 1.5 SOI................ 9 1.6 SOFIST... 10 1.6.1............................. 11 1.6.2......................... 13 1.6.3............................. 13 1.6.4.............................. 13 1.7.............................. 13 1.7.1.......................... 13 2 SOFISTver.1 14 2.1... 14 2.2... 15 2.2.1.......................... 16 2.2.2 BPW(Buried P Well)... 16 2.2.3.......................... 17 2.2.4 Column-ADC.......................... 17 2.3............................. 18 3 20 3.1... 20 3.2... 20 1
3.2.1 SEABAS2............................ 20 3.2.2.......................... 21 3.2.3......................... 21 4 22 4.1 1MIP S/N.... 22 4.2 S/N.............................. 22 4.3 BPW... 22 5 23 5.1 S/N............................ 23 5.2 BPW... 23 6 24 25 2
1.1 pn......................... 4 1.2... 5 1.3 ILC... 6 1.4 ILD.......................... 7 1.5 VTX.............................. 8 1.6 ILC............................ 8 1.7 SOI............................ 9 1.8 SOFIST............................ 11 1.9 SOFIST... 12 2.1 SOFIST ver.1......................... 14 2.2 SOFIST......................... 15 2.3 SOFIST ver.1.............. 16 2.4......................... 17 2.5 16µm BPW... 18 2.6 ADC............................ 19 3
1 1.1 1.1.1 P N P N Si 300µm 22000 1.1: pn 4
1.1.2 2 X, Y 1.2: ( ) ASIC(Application Specific Integrated Circuit) ASIC ASIC 5
1.2 ILC ILC(International Linear Collider) 30 km 250 500 GeV 1TeV 1.3: ILC 1.2.1 ILC ILC 2012 LHC Higgs Higgs b,c,g b c ( ) Impact Parameter ILC Impact Parameter 10 σ<5 [µm] (1.1) p sin 3/2 θ 6
p θ 1.2.2 ILD ILC SiD ILD SOI ILD ILD VTX TPC ECAL HCAL 1.4: ILD VTX(Vertex Detector) ILD 1.6 cm 1 0.15 X 0 7
1.5: VTX 1.2.3 ILC - 1ms 199 ms 1ms 500GeV 1 1312 1TeV 2850 1.6: ILC 1.3 3 µm 8
100 µm/layer 3 1.4 SOI(Silicon On Insulator) SOI Silicon On Insulator P/N Bulk CMOS SOI CMOS PC 1.5 SOI 1.7: SOI SOI 9
SOI SOI Dead Channel S/N Channel SOI Bulk CMOS 1.6 SOFIST SOI ILC SOI SOFIST SOFIST 20 20µm 2 3125 500 10
1.8: SOFIST 1.6.1 2 binary Channel d/2 <δx 2 d/2 >= x2 dx d/2 dx (1.2) d/2 δx = d 12 (1.3) 11
ADC Binary δx = d S/N (1.4) SOFIST 20µm 3 µm Column-ADC SOFIST 3125ch 8 bitadc 1.9: SOFIST 12
1.6.2 20µm ILC 3 1.6.3 1.6.4 SOFIST SOI SOFIST 50µm/layer 1.7 SOI SOI SOFIST SOFISTver.1 SOFISTver.1 1.7.1 SOFIST 90Sr 13
2 SOFISTver.1 SOI KEKSOI ILC SOI SOFIST(SOI sensorforfine measurement of Space and Time) SOFISTver.1 2.1 SOFIST 50um SOFISTver.1 2.1: SOFIST ver.1 14
2.2 SOFISTver.1 FzN 500µm 20 20µm 50 50 1 1mm 1 8bit Column-ADC 50 SEABAS2 12bitADC Pre-amp 2 2.2: SOFIST 15
2.2.1 2.3: SOFIST ver.1 50um 5fF Preamp 300um 1MIP 20fF Pre-amp 500µm 50µm 3 BPW( ) 2.4 2.2.2 BPW(Buried P Well) SOI 16
2.4: Back Gate P P SOFISTver.1 12 12µm 2 14 14µm 2 16 16µm 2 BPW BPW 2.2.3 On-ChipADC SEABAS2 12-bitADC 2.2.4 Column-ADC Column ADC Ramp generator ADC block ADC block Comparator Ramp generator Ramp generator Ramp Comparator 17
2.5: 16µm BPW 2.3 δx = d S/N (2.1) 10 δx < 3 S/N 17 S/N 18
2.6: ADC 19