CdTe γ 02cb059e :
|
|
|
- みいか こうじょう
- 5 years ago
- Views:
Transcription
1 CdTe γ 02cb059e :
2 2
3 i CdTe Pulse Shape A CdTe Flash ADC Pre Amp (H.V) CdTe Pre Amp ( ) τ B ( Trigger ) Shapping Amp Timing Single Channel Analyzer (Timing SCA)
4 ii Gate Generator Attenuator Trigger Pulse Strip.Sum Guard ring.sum Strip.Sum Guard ring.sum CdTe γ Guard ring.sum Hecht
5 iii ( 5mm 700V ) CdTe ( 5mm 700V ) A CdTe (ACRORAD ) Pixie-4 [5] Pixie-4 Trigger [5] CdTe Pixie CdTe CdTe (2.7) CdTe ( ) B Trigger Pulse Trigger Pulse Strip.Sum Guard ring.sum Strip.Sum Guard ring.sum GEANT
6 iv 5.2 CdTe Guard ring γ Hecht γ
7 v
8
9 γ γ NaI Ge NaI Ge Ge Ge NaI γ CdTe) 1.1 CdTe γ CdTe γ Ge 4 5 Si 100 [1] Ge (FWHM) Ge 0.1% NaI 8.5% CdTe 1.13% [2] CdTe Ge Si 48/ (g/cm 3 ) (ev) (ev/ ) (cm 2 /Vs)) (cm 2 /Vs) CdTe 10 CdTe X
10 2 1 [3] CdTe mm CdTe 2 FAST-SLOW [4] [2] MeV γ X CdTe 0.5 1mm CdTe 0.5 1mm γ CdTe CdTe CdTe γ γ Ge CdTe [6] [7] CdTe γ 1.2 CdTe γ Flash ADC mm 10mm 10mm CdTe 137 Cs γ CdTe Flash ADC Pre Amp ( Pre Amp ) Flash ADC CdTe v e v h ) τ e τ h x (v e v h τ e τ h ) γ γ
11 3 2 CdTe 10 CdTe γ CdTe (Hecht ) γ ( ) Anode Crystal dx e e h x dxh l Cathode 2.1 dq(x) = en 0 (dx e + dx h ) (2.1) l
12 4 2 dq(x) N 0 l v e,v h t e t h (2.1) dq(t) = en 0 (v e dt e + v h dt h ) (2.2) l (2.2) γ t Q(t) = en 0 (v e t e + v h t h ) (2.3) l Q = en 0 = Q 0 (2.4) Q 0 γ E γ Pre Amp V Q 0 E γ V Q 0 (2.5) V (t) C 2.2 (2.3) Pre Amp 2.2 t = 0 γ Q A B 0.8 C Charge 0.6 D Q electron electron+hole electron+hole hole Time [µs] 2.2 ( 5mm 700V )
13 2.3 CdTe Pulse Shape ( ) A B C A flat A B C D D l D γ CdTe B C 2.3 v e x B C γ x B C A ( ) flat A l A γ CdTe γ 2.3 CdTe Pulse Shape Ge CdTe 2.2 (2.2) dq(t) = en 0 (v e exp( t e )dt e + v h exp( t h )dt h ) (2.6) l τ e τ h τ e τ h (2.6) γ t Q(t) = en 0 l ( v e τ e (1 exp( t e ) + v h τ h (1 exp( t ) h ) τ e τ h [8] (2.7) Hecht (2.7) CdTe 2.3 (2.7)
14 A Charge B C D Q A Q Q C Q B Q D 0.2 electron electron+hole electron+hole hole Time [µs] 2.3 CdTe ( 5mm 700V ) (0 < k < 1) k Q A D = k A D Q 0 (2.8) (2.7) Q(t) x ( ) Q(x) = Q ( 0 v e τ e (1 exp( x ) (d x) ) + v h τ h (1 exp( ) l v e τ e v h τ h (2.9) = k(x)q 0 (2.9) γ
15 7 3 A A A Flash ADC 137 Cs γ 35 kev (FWHM) Trigger Pulse Flush ADC H.V CdTe Pre Amp Strip.Sum Flash ADC CH0 PC 3.1 A CdTe CdTe mm 10 mm 10 mm Pt (Pt/CdTe/Pt) Strip (S1,S2,S3,S4) Guard ring (G1,G2,G3) ( 3.3) Strip
16 8 3 A CdTe 10mm 10mm 5mm G1 G2 G3 S1 S2 S3 S4 G1 G2 G3 10mm S1 S2 S3 10mm S4 UP BOTTOM 3.2 CdTe (ACRORAD ) 3.3 CdTe Guard ring ( ) [3] CdTe [4] Flash ADC Flash ADC Pixie-4 (XIA ) Pixie MHz Flash ADC CdTe Pre Amp ±2 V Pixie-4 PXI/Compact PCI PXI/Compact PCI PXI Compact PCI NI PXI-1042 (NATIONAL INSTRUMENTS ) CPU (Windows2000) PC Pixie-4 Fast Filter Slow Filter 3.4 Pre Amp Rise Time Flat Time L Rise Time G Flat Time Fast Filter Trigger Slow Filter ( 3.5) 3.4 Pixie-4 [5] 3.5 Pixie-4 Trigger [5]
17 3.3 実験 Pre Amp CLEAR-PULSE 社製の 528A を使用した 3000 V の高圧にも耐えられるように Input コネクタは SHV になっている 帰還抵抗は 100 MΩ で 帰還容量は 1 pf である １台で８チャンネル使用することがで きる 高圧電源 (H.V) ORTEC 660 を使用した 図 3.6 CdTe 検出器 図 3.7 Pixie 実験 700V の電圧を Strip 電極と Guard ring 電極の両方に印加し 4 本の Strip 電極をまとめた (Strip.Sum) の 信号を収集した CdTe 検出器を遮光されたアルミ製の箱の中に入れ GND は箱の GND に落とした 箱 と Pre Amp をアルミホイルで繋ぐことで Pre Amp の GND も箱の GND に落とした Trigger Pulse は Pixie-4 内のフィルタリングによって作った Rise Time は正孔による遅い立ち上がりの信号に対応するた め 最大の µ s に設定し Threshold はノイズを多く拾わない程度に低く設定した 線源は 137 Cs (662 kev) を使用し 陰極側から照射したデータを収集した 信号は全 5400 イベントを収集した 3.4 結果 解析 CdTe の波形 図 3.8 は実際に CdTe 検出器より得られた CdTe の波形である 式 (2.7) から計算した波形 (図 2.3) と良 く似ている
18 10 3 A Channel Time [us] 3.8 CdTe Pre Amp 3.8 Pre Amp Pre Amp (2.7) 3.9 f (t) Pre Amp F(t) Pre Amp Q(t) i(t) f(t) C R F(t) 3.9 F(t) = Ri(t) (3.1) (3.2) Q(t) = C( f (t) F(t)) (3.2) i(t) = C( d f (t) dt (3.1) (3.3) τ = RC df(t) ) (3.3) dt d f (t) dt = df(t) dt + F(t) τ (3.4)
19 Pre Amp (3.4) ( df(t) f (t) = + F(t) ) dt (3.5) dt τ (3.5) Pre Amp ( 3.10) Pre Amp Channel Time [us] 3.10 τ = ns ( ) 5 (2.7) τ = τ e = τ h 6 (v e,v h,τ,x,q 0,t 0 ) CdTe t 0 t = 0 Delay 2.5 µs t = µs v e = 1.4 cm/µs v h = 0.15 cm/µs τ = 4.5 µs γ x γ E γ ( E γ Q 0 E γ Q 0 ) 3.11 CdTe (2.7) γ E γ γ x ( 3.12)
20 12 3 A E γ =5710 [ch] x=0.45 [mm] E γ =5583 [ch] x=0.35 [cm] E γ =5528 [ch] x=0.24 [cm] E γ =5502 [ch] x=0.18 [cm] CdTe (2.7) τ E γ x τ = 4.5 µs (2.9) (ADC Channel) ( 3.13) (x ) τ ( 3.14) τ = τ = 4.5 (2.9) ( 3.15) 3.5 A 137 Cs 662 kev γ CdTe Flash ADC 700 V
21 Cs : 662 kev Count Number FWHM : 35 kev Channel Number 3.12 CdTe ( ) v e = 1.4 cm/µs v h = 0.15 cm/µs 10 ( 1 1.1) τ = 4.5 µs (3.4.4) (2.9) γ 3.12 (FWHM) 35 kev 5 mm CdTe
22 14 3 A CdTe Pixie-4 Trigger Pulse Pixie-4 Rise Time A Rise Time Rise Time B Trigger Trigger Pulse Pixie-4
23
24
25 17 4 B ( Trigger ) A x = Trigger Pulse Pixie-4 Pixie-4 (Rise Time) MAX Pixie-4 Trigger B Strip.Sum Trigger Pulse Pixie-4 γ CdTe B Strip Guard ring A Trigger Pulse B Guard ring.sum Pixie-4 Trigger Pulse CH0 Strip.Sum CH1 Guard ring.sum CH2 3ch 4.2 CdTe Flash ADC Pre Amp A Shapping Amp ORTEC 571 Strip.Sum 6 µs CdTe 6 µs Strip.Sum 20 µs 1000 mv Timing Single Channel Analyzer (Timing SCA) ORTEC MODEL 420A Timing SCA TTL (Transistor-Transistor Logic) 0.48 V 10 V
26 18 4 B ( Trigger ) Trigger Pulse H.V PreAmp Shapping Amp Timing SCA Gate Generator Attenuator Flash ADC CH0 CdTe Strip.Sum CH1 PC PreAmp Guard ring.sum CH2 4.1 B 10 V MAX 0.48 V Shapping Amp Timing SCA 500 ns 4.5 V Gate Generator ORTEC 416A Gate Generator ( ) ( ) ORTEC 416A µs 2 10 V Pixie µs 2 V Timing SCA 2 µs 2 V Attenuator ( ) Attenuator Gate Generetor 2 V Pixie-4 ±2 V Pixie-4 Attenuator Pixie mv
27 CdTe Pulse 1000 mv 4.5 V 20 mv 20 us 0.5 us 6 us Shapping Amp Timing SCA 2 V Trigger Pulse 2 us 100 mv 2 us Gate Generator 4.2 Trigger Pulse Attenuator 4.3 Ch0 Trigger Ch1 Ch2 Strip.Sum Guad ring.sum 3 Ch1 Ch2 10 µ s Delay Trigger CdTe A GND GND A 137 Cs CdTe Trigger Pulse Strip.Sum Guard ring.sum 4.3 Trigger Pulse Strip.Sum Guard ring.sum Trigger Pulse Strip.Sum Guard ring.sum
28 20 4 B ( Trigger ) 4.3 Trigger Pulse Strip.Sum Guard ring.sum Guard ring.sum Strip Guard ring Strip Guard ring Strip.Sum Guard ring.sum
29 Strip.Sum Guard ring.sum Strip.Sum ( ) 4.4 Strip.Sum Guard ring.sum Guard ring.sum ( ) CdTe ( ) Guard ring.sum
30 22 4 B ( Trigger ) Guard ring.sum Guard ring.sum Guard ring.sum Guard ring.sum A (2.7) Strip.Sum Guard ring.sum (2.7) (2.7) 4.5 A ( ) 4.5 (x = 0.1 ) Trigger Pulse B A ( 3.12 ) (FWHM) 67 kev A
31 A B Trigger Pulse 4.5 x = x = 0 A Q=
32
33 A B ( ) GEANT3 ( 5.1) 5.1 GEANT3 x = 0 x = 0.5 γ γ
34 CdTe 5.2 CdTe γ 5.2 CdTe γ [9] keV γ CdTe µ = 0.4 (cm 1 ) CdTe γ ( ) 5.4 exponential γ CdTe γ keV γ CdTe CdTe B γ 5.5 (1) (2) (3) γ γ (1) (3) 7
35
36 28 5 CdTe
37 29 6 Guard ring.sum 6.1 Guard ring.sum Guard ring.sum γ ( 6.1) γ Strip Guard ring Guard ring Guard ring Guard ring.sum Guard ring.sum Guard ring t h t h Guard ring Q 1 Q Q 1 Q 2 Q 1 Q 2
38 30 6 Q Guard ring Strip Cathode Q Guard ring Strip Cathode - t Anode + Strip Guard ring t Anode Strip Guard ring Q Q t + t - Q + Q t t Guard ring γ 6.2 Guard ring.sum 6.2 t h Guard ring.sum CdTe Guard ring.sum
39 Hecht Hecht ( 2 (2.7)) Hecht CdTe 137 Cs (662 kev) CdTe ( 5 5.2) γ CdTe Hecht 7.1 Hecht flat Hecht 7.1 Hecht Hecht 2 2
40 A 7.2 γ A γ x = γ 7.2 γ B,C 7.3 B x = 0 x = 0.1 B C 7.3
41 mm CdTe γ γ γ A Strip.Sum Flash ADC Trriger Hecht v e = 1.4 cm/µ v h = 0.15 cm/µ τ = 4.5 µs 137 Cs 662 kev γ 35 kev (FWHM) NaI(Tl) A 5 mm CdTe γ B Strip.Sum Guard ring.sum A B Trigger Flash ADC Guard ring.sum Hecht Hecht Strip Guard ring γ CdTe γ CdTe
42
43 35 CdTe CdTe CNS CNS ( )
44
45 37 [1] F. ( ) [2] M.Richter and P.Siffert,Nucl.Instrum.and Methods Phys.Res.,Sect.A322,529 (1992). [3] VLSI CdTe 2003 [4] CdTe (2005) [5] XIA Pixie-4 User s Manual [ [6] M.kurokawa et al.,ieee Trans.Nucl.Sci.50,1309(2003). [7] S.Shimoura,Nucl.Instrum.and Methods Phys.Res.,Sect.A525,188(2004). [8] K.Hecht,Z.Phys.77,235(1932). [9] T.Takahashi et al.,spie.vol4851,1228(2003).
Λ (Λ ) Λ (Ge) Hyperball γ ΛN J-PARC Λ dead time J-PARC flash ADC 1 dead time ( ) 1 µsec 3
19 Λ (Λ ) Λ (Ge) Hyperball γ ΛN J-PARC Λ dead time J-PARC flash ADC 1 dead time ( ) 1 µsec 3 1 1 1.1 γ ΛN................. 1 1.2 KEK J-PARC................................ 2 1.2.1 J-PARC....................................
25 3 4
25 3 4 1 µ e + ν e +ν µ µ + e + +ν e + ν µ e e + TAC START STOP START veto START (2.04 ± 0.18)µs 1/2 STOP (2.09 ± 0.11)µs 1/8 G F /( c) 3 (1.21±0.09) 5 /GeV 2 (1.19±0.05) 5 /GeV 2 Weinberg θ W sin θ W
Drift Chamber
Quench Gas Drift Chamber 23 25 1 2 5 2.1 Drift Chamber.............................................. 5 2.2.............................................. 6 2.2.1..............................................
Donald Carl J. Choi, β ( )
:: α β γ 200612296 20 10 17 1 3 2 α 3 2.1................................... 3 2.2................................... 4 2.3....................................... 6 2.4.......................................
W 1983 W ± Z cm 10 cm 50 MeV TAC - ADC ADC [ (µs)] = [] (2.08 ± 0.36) 10 6 s 3 χ µ + µ 8 = (1.20 ± 0.1) 10 5 (Ge
![W 1983 W ± Z cm 10 cm 50 MeV TAC - ADC ADC [ (µs)] = [] (2.08 ± 0.36) 10 6 s 3 χ µ + µ 8 = (1.20 ± 0.1) 10 5 (Ge](/thumbs/91/105929864.jpg "W 1983 W ± Z cm 10 cm 50 MeV TAC - ADC ADC [ (µs)] = [] (2.08 ± 0.36) 10 6 s 3 χ µ + µ 8 = (1.20 ± 0.1) 10 5 (Ge")
22 2 24 W 1983 W ± Z 0 3 10 cm 10 cm 50 MeV TAC - ADC 65000 18 ADC [ (µs)] = 0.0207[] 0.0151 (2.08 ± 0.36) 10 6 s 3 χ 2 2 1 20 µ + µ 8 = (1.20 ± 0.1) 10 5 (GeV) 2 G µ ( hc) 3 1 1 7 1.1.............................
soturon.dvi
Stopped Muon 94S2003J 11 3 10 1 2 2 3 2.1 Muon : : : : : : : : : : : : : : : : : : : : : : : : : : : : : 3 2.2 : : : : : : : : 4 2.3 : : : : : : : : : : : : : 6 3 7 3.1 : : : : : : : : : : : : : : : :
[ ] [ ] [ ] [ ] [ ] [ ] ADC
![[ ] [ ] [ ] [ ] [ ] [ ] ADC](/thumbs/91/107208011.jpg "[ ] [ ] [ ] [ ] [ ] [ ] ADC")
[ ] [ ] [ ] [ ] [ ] [ ] ADC BS1 m1 PMT m2 BS2 PMT1 PMT ADC PMT2 α PMT α α = n ω n n Pn TMath::Poisson(x,[0]) 0.35 0.3 0.25 0.2 0.15 λ 1.5 ω n 2 = ( α 2 ) n n! e α 2 α 2 = λ = λn n! e λ Poisson Pn 0.1
positron 1930 Dirac 1933 Anderson m 22Na(hl=2.6years), 58Co(hl=71days), 64Cu(hl=12hour) 68Ge(hl=288days) MeV : thermalization m psec 100
positron 1930 Dirac 1933 Anderson m 22Na(hl=2.6years), 58Co(hl=71days), 64Cu(hl=12hour) 68Ge(hl=288days) 0.5 1.5MeV : thermalization 10 100 m psec 100psec nsec E total = 2mc 2 + E e + + E e Ee+ Ee-c mc
24 10 10 1 2 1.1............................ 2 2 3 3 8 3.1............................ 8 3.2............................ 8 3.3.............................. 11 3.4........................ 12 3.5.........................
Mｏｔｔ散乱によるParity対称性の破れを検証
Mott Parity P2 Mott target Mott Parity Parity Γ = 1 0 0 0 0 1 0 0 0 0 1 0 0 0 0 1 t P P ),,, ( 3 2 1 0 1 γ γ γ γ γ γ ν ν µ µ = = Γ 1 : : : Γ P P P P x x P ν ν µ µ vector axial vector ν ν µ µ γ γ Γ ν γ
NaI(Tl) CsI(Tl) GSO(Ce) LaBr 3 (Ce) γ Photo Multiplier Tube PMT PIN PIN Photo Diode PIN PD Avalanche Photo Diode APD MPPC Multi-Pixel Photon Counter L
19 P6 γ 2 3 27 NaI(Tl) CsI(Tl) GSO(Ce) LaBr 3 (Ce) γ Photo Multiplier Tube PMT PIN PIN Photo Diode PIN PD Avalanche Photo Diode APD MPPC Multi-Pixel Photon Counter LaBr 3 (Ce) PMT 662keV 2.9% CsI(Tl) 7.1%
CsI(Tl) 2005/03/
CsI(Tl) 2005/03/30 1 2 2 2 3 3 3.1............................................ 3 3.2................................... 4 3.3............................................ 5 4 6 4.1..............................................
SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT
![SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT](/thumbs/92/110123587.jpg "SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT")
3 SPECT SJ SPECT(Single Photon Emission Computer Tomography ) SPECT FWHM 3 4mm [] MPPC SPECT MPPC LSO 6mm 67.5 photo electron 78% kev γ 4.6 photo electron SPECT 9ch MPPC array 3 3 9 3 3 9.mm(sigma) . SPECT..................................................................3............
Muon Muon Muon lif
2005 2005 3 23 1 2 2 2 2.1 Muon.......................................... 2 2.2 Muon........................... 2 2.3................................. 3 2.4 Muon life time.........................................
1 1 (proton, p) (neutron, n) (uud), (udd) u ( ) d ( ) u d ( ) 1: 2: /2 1 0 ( ) ( 2) 0 (γ) 0 (g) ( fm) W Z 0 0 β( )
( ) TA 2234 oda@phys.kyushu-u.ac.jp TA (M1) 2161 sumi@epp.phys.kyushu-u.ac.jp TA (M1) 2161 takada@epp.phys.kyushu-u.ac.jp TA (M1) 2254 tanaka@epp.phys.kyushu-u.ac.jp µ ( ) 1 2 1.1...............................................
thesis.dvi
3 17 03SA210A 2005 3 1 introduction 1 1.1 Positronium............ 1 1.2 Positronium....................... 4 1.2.1 moderation....................... 5 1.2.2..................... 6 1.2.3...................
大面積Micro Pixel Chamberの開発 9
Introduction µ-pic と電場構造 ガス増幅 Simulation 信号波形の再現 まとめと今後 京都大学宇宙線研究室髙田淳史 2 次元ガスイメージング検出器プリント基板技術で製作ピクセル間隔 :4 μm 個々のピクセルでガス増幅大面積 : cm 2 and 3 3 cm 2 大きな増幅率 :max ~15 高い位置分解能 :RMS ~12 μm 均一な応答 :RMS ~5% ( cm
スライド 1
2008 年度 P6 発表会 新型半導体検出器 MPPCによる放射線測定 2009 年 3 月 11 日福間 今野班 目次 福間 今野 実験の目的 MPPCとシンチレータ 原理と解説 測定での困難 測定結果と考察 まとめと課題 実験の目的 MPPC(Multi Pixel Photon Counter) 最近になって開発された新しい光検出器優れたフォトンカウンティング能力低電圧で動作コンパクト LaBr3
MOSFET 6-2 CMOS 6-2 TTL Transistor Transistor Logic ECL Emitter Coupled Logic I2L Integrated
1 -- 7 6 2011 11 1 6-1 MOSFET 6-2 CMOS 6-2 TTL Transistor Transistor Logic ECL Emitter Coupled Logic I2L Integrated Injection Logic 6-3 CMOS CMOS NAND NOR CMOS 6-4 6-5 6-1 6-2 CMOS 6-3 6-4 6-5 c 2011 1/(33)
「産業上利用することができる発明」の審査の運用指針（案）
1 1.... 2 1.1... 2 2.... 4 2.1... 4 3.... 6 4.... 6 1 1 29 1 29 1 1 1. 2 1 1.1 (1) (2) (3) 1 (4) 2 4 1 2 2 3 4 31 12 5 7 2.2 (5) ( a ) ( b ) 1 3 2 ( c ) (6) 2. 2.1 2.1 (1) 4 ( i ) ( ii ) ( iii ) ( iv)
3 1 4 1.1......................... 4 1.1.1....................... 4 1.1.2.................. 4 1.1.3 Coulomb potential.............. 5 1.2.............
Fe muonic atom X 25 5 21 3 1 4 1.1......................... 4 1.1.1....................... 4 1.1.2.................. 4 1.1.3 Coulomb potential.............. 5 1.2.......................... 6 1.2.1...................
Thick-GEM 06S2026A 22 3
Thick-GEM 06S2026A 22 3 (MWPC-Multi Wire Proportional Chamber) MPGD(Micro Pattern Gas Detector) MPGD MPGD MPGD MPGD GEM(Gas Electron Multiplier) GEM GEM GEM Thick-GEM GEM Thick-GEM 10 4 Thick-GEM 1 Introduction
Operation_test_of_SOFIST
ILC :SOFIST 2 29 1 18 SOI ILC SOI SOFIST SOFISTver.1 SOFISTver.1 SOFIST SOFISTver.1 S/N BPW 1 1 4 1.1............... 4 1.1.1... 4 1.1.2... 5 1.2 ILC... 6 1.2.1 ILC... 6 1.2.2 ILD...........................
44 4 I (1) ( ) (10 15 ) ( 17 ) ( 3 1 ) (2)
(1) I 44 II 45 III 47 IV 52 44 4 I (1) ( ) 1945 8 9 (10 15 ) ( 17 ) ( 3 1 ) (2) 45 II 1 (3) 511 ( 451 1 ) ( ) 365 1 2 512 1 2 365 1 2 363 2 ( ) 3 ( ) ( 451 2 ( 314 1 ) ( 339 1 4 ) 337 2 3 ) 363 (4) 46
i ii i iii iv 1 3 3 10 14 17 17 18 22 23 28 29 31 36 37 39 40 43 48 59 70 75 75 77 90 95 102 107 109 110 118 125 128 130 132 134 48 43 43 51 52 61 61 64 62 124 70 58 3 10 17 29 78 82 85 102 95 109 iii
目次 2 1. イントロダクション 2. 実験原理 3. データ取得 4. データ解析 5. 結果 考察 まとめ
オルソポジトロニウムの寿命測定による QED の実験的検証 課題演習 A2 2016 年後期 大田力也鯉渕駿龍澤誠之 羽田野真友喜松尾一輝三野裕哉 目次 2 1. イントロダクション 2. 実験原理 3. データ取得 4. データ解析 5. 結果 考察 まとめ 第 1 章イントロダクション 実験の目的 4 ポジトロニウム ( 後述 ) の崩壊を観測 オルソポジトロニウム ( スピン 1 状態 ) の寿命を測定
0.1 I I : 0.2 I
1, 14 12 4 1 : 1 436 (445-6585), E-mail : sxiida@sci.toyama-u.ac.jp 0.1 I I 1. 2. 3. + 10 11 4. 12 1: 0.2 I + 0.3 2 1 109 1 14 3,4 0.6 ( 10 10, 2 11 10, 12/6( ) 3 12 4, 4 14 4 ) 0.6.1 I 1. 2. 3. 0.4 (1)
pc910l0nsz_j
PC90L0NSZ0F PC90L0NSZ0F µ µ µ PC90L PC90L Date Sep.. 00 SHARP Corporation 7 NC Anode Cathode NC 7 GND V O (Open collector) V E (Enable) V CC H H L L H H H L H L L H L: (0) H: () PC90L0NSZ0F PC90L0YSZ0F
cm H.11.3 P.13 2 3-106-
H11.3 H.11.3 P.4-105- cm H.11.3 P.13 2 3-106- 2 H.11.3 P.47 H.11.3 P.27 i vl1 vl2-107- 3 h vl l1 l2 1 2 0 ii H.11.3 P.49 2 iii i 2 vl1 vl2-108- H.11.3 P.50 ii 2 H.11.3 P.52 cm -109- H.11.3 P.44 S S H.11.3
Bethe-Bloch Bethe-Bloch (stopping range) Bethe-Bloch FNAL (Fermi National Accelerator Laboratory) - (SciBooNE ) SciBooNE Bethe-Bloch FNAL - (SciBooNE
21 2 27 Bethe-Bloch Bethe-Bloch (stopping range) Bethe-Bloch FNAL (Fermi National Accelerator Laboratory) - (SciBooNE ) SciBooNE Bethe-Bloch FNAL - (SciBooNE ) Bethe-Bloch 1 0.1..............................
2005 4 18 3 31 1 1 8 1.1.................................. 8 1.2............................... 8 1.3.......................... 8 1.4.............................. 9 1.5.............................. 9
2004 A1 10 4 1 2 2 3 2.1................................................ 3 2.2............................................. 4 2.3.................................................. 5 2.3.1.......................
23 1 Section ( ) ( ) ( 46 ) , 238( 235,238 U) 232( 232 Th) 40( 40 K, % ) (Rn) (Ra). 7( 7 Be) 14( 14 C) 22( 22 Na) (1 ) (2 ) 1 µ 2 4
23 1 Section 1.1 1 ( ) ( ) ( 46 ) 2 3 235, 238( 235,238 U) 232( 232 Th) 40( 40 K, 0.0118% ) (Rn) (Ra). 7( 7 Be) 14( 14 C) 22( 22 Na) (1 ) (2 ) 1 µ 2 4 2 ( )2 4( 4 He) 12 3 16 12 56( 56 Fe) 4 56( 56 Ni)
JPS2016_Aut_Takahashi_ver4
CTA 111: CTA 7 A B A C D A E F G D H I J K H H J L H I A C B I A J I H A M H D G Dang Viet Tan G Daniela Hadasch A Daniel Mazin A C CTA-Japan A, B, Max-Planck-Inst. fuer Phys. C, D, ISEE E, F, G, H, I,
2
Rb Rb Rb :10256010 2 3 1 5 1.1....................................... 5 1.2............................................. 5 1.3........................................ 6 2 7 2.1.........................................
main.dvi
CeF 3 1 1 3 1.1 KEK E391a... 3 1.1.1 KL 0 π0 νν... 3 1.1.2 E391a... 4 1.1.3... 5 1.2... 6 2 8 2.1... 8 2.2... 10 2.3 CeF 3... 12 2.4... 13 3 15 3.1... 15 3.2... 15 3.3... 18 3.4... 22 4 23 4.1... 23 4.2...
陽電子科学 第4号 (2015) 3-8
4 (2015) 3 8 Japanese Positron Science Society Positron annihilation age momentum correlation (AMOC) measurement Abstract: Positron annihilation Age-MOmentum Correlation (AMOC) measurement is the coincidence
untitled
BELLE TOP 12 1 3 2 BELLE 4 2.1 BELLE........................... 4 2.1.1......................... 4 2.1.2 B B........................ 7 2.1.3 B CP............... 8 2.2 BELLE...................... 9 2.3
V(x) m e V 0 cos x π x π V(x) = x < π, x > π V 0 (i) x = 0 (V(x) V 0 (1 x 2 /2)) n n d 2 f dξ 2ξ d f 2 dξ + 2n f = 0 H n (ξ) (ii) H
199 1 1 199 1 1. Vx) m e V cos x π x π Vx) = x < π, x > π V i) x = Vx) V 1 x /)) n n d f dξ ξ d f dξ + n f = H n ξ) ii) H n ξ) = 1) n expξ ) dn dξ n exp ξ )) H n ξ)h m ξ) exp ξ )dξ = π n n!δ n,m x = Vx)
128 3 II S 1, S 2 Φ 1, Φ 2 Φ 1 = { B( r) n( r)}ds S 1 Φ 2 = { B( r) n( r)}ds (3.3) S 2 S S 1 +S 2 { B( r) n( r)}ds = 0 (3.4) S 1, S 2 { B( r) n( r)}ds
127 3 II 3.1 3.1.1 Φ(t) ϕ em = dφ dt (3.1) B( r) Φ = { B( r) n( r)}ds (3.2) S S n( r) Φ 128 3 II S 1, S 2 Φ 1, Φ 2 Φ 1 = { B( r) n( r)}ds S 1 Φ 2 = { B( r) n( r)}ds (3.3) S 2 S S 1 +S 2 { B( r) n( r)}ds
Microsoft Word - N-TM307取扱説明書.doc
Page 1 of 12 2CHGATEANDDELAYGENERATORTYPE2 N-TM307 取扱説明書 初版発行 2015 年 10 月 05 日 最新改定 2015 年 10 月 05 日 バージョン 1.00 株式会社 テクノランドコーポレーション 190-1212 東京都西多摩郡瑞穂町殿ヶ谷 902-1 電話 :042-557-7760 FAX:042-557-7727 E-mail:info@tcnland.co.jp
LT 低コスト、シャットダウン機能付き デュアルおよびトリプル300MHz 電流帰還アンプ
µ µ LT1398/LT1399 V IN A R G 00Ω CHANNEL A SELECT EN A R F 3Ω B C 97.6Ω CABLE V IN B R G 00Ω EN B R F 3Ω 97.6Ω V OUT OUTPUT (00mV/DIV) EN C V IN C 97.6Ω R G 00Ω R F 3Ω 1399 TA01 R F = R G = 30Ω f = 30MHz
news
ETL NEWS 1999.9 ETL NEWS 1999.11 Establishment of an Evaluation Technique for Laser Pulse Timing Fluctuations Optoelectronics Division Hidemi Tsuchida e-mail:tsuchida@etl.go.jp A new technique has been
NL-22／NL-32取扱説明書_操作編
MIC / Preamp ATT NL-32 A C ATT AMP 1 AMP 2 AMP 3 FLAT FLAT CAL.SIG. OVER LOAD DET. AMP 4 AMP 5 A/D D/A CONV. AMP 6 AMP 7 A/D CONV. Vref. AMP 8 AMP 10 DC OUT AMP 9 FILTER OUT AC DC OUT AC OUT KEY SW Start
LEPS
LEPS2 2016 2 17 LEPS2 SPring-8 γ 3 GeV γ 10 Mcps LEPS2 7 120 LEPS Λ(1405) LEPS2 LEPS2 Silicon Strip Detector (SSD) SSD 100 µm 512 ch 6 cm 3 x y 2 SSD 6 3072 ch APV25-s1 APVDAQ VME APV25-s1 SSD 128 ch
2 0.1 Introduction NMR 70% 1/2
Y. Kondo 2010 1 22 2 0.1 Introduction NMR 70% 1/2 3 0.1 Introduction......................... 2 1 7 1.1.................... 7 1.2............................ 11 1.3................... 12 1.4..........................
http://www.ike-dyn.ritsumei.ac.jp/ hyoo/wave.html 1 1, 5 3 1.1 1..................................... 3 1.2 5.1................................... 4 1.3.......................... 5 1.4 5.2, 5.3....................
3-2 PET ( : CYRIC ) ( 0 ) (3-1 ) PET PET [min] 11 C 13 N 15 O 18 F 68 Ga [MeV] [mm] [MeV]
![3-2 PET ( : CYRIC ) ( 0 ) (3-1 ) PET PET [min] 11 C 13 N 15 O 18 F 68 Ga [MeV] [mm] [MeV]](/thumbs/91/106519999.jpg "3-2 PET ( : CYRIC ) ( 0 ) (3-1 ) PET PET [min] 11 C 13 N 15 O 18 F 68 Ga [MeV] [mm] [MeV]")
3 PET 3-1 PET 3-1-1 PET PET 1-1 X CT MRI(Magnetic Resonance Imaging) X CT MRI PET 3-1 PET [1] H1 D2 11 C-doxepin 11 C-raclopride PET H1 D2 3-2 PET 0 0 H1 D2 3-1 PET 3-2 PET ( : CYRIC ) ( 0 ) 3-1-2 (3-1
untitled
COPAL ELECTRONICS 32 (DP) DP INC 2 3 3 RH RL RWB 32 C S U/D INC U/D CS 2 2 DP7114 32 SOIC CMOS 2.5 V - 6.0 V / 10 kω 50 kω 100 kω TSSOP MSOP /BFR INC / U/D RH RoHS GND RWB RL CS VCC 2017 6 15 1 : R = 2
= hυ = h c λ υ λ (ev) = 1240 λ W=NE = Nhc λ W= N 2 10-16 λ / / Φe = dqe dt J/s Φ = km Φe(λ)v(λ)dλ THBV3_0101JA Qe = Φedt (W s) Q = Φdt lm s Ee = dφe ds E = dφ ds Φ Φ THBV3_0102JA Me = dφe ds M = dφ ds
devicemondai
c 2019 i 3 (1) q V I T ε 0 k h c n p (2) T 300 K (3) A ii c 2019 i 1 1 2 13 3 30 4 53 5 78 6 89 7 101 8 112 9 116 A 131 B 132 c 2019 1 1 300 K 1.1 1.5 V 1.1 qv = 1.60 10 19 C 1.5 V = 2.4 10 19 J (1.1)
橡実験IIINMR.PDF
(NMR) 0 (NMR) 2µH hω ω 1 h 2 1 1-1 NMR NMR h I µ = γµ N 1-2 1 H 19 F Ne µ = Neh 2mc ( 1) N 2 ( ) I =1/2 I =3/2 I z =+1/2 I z = 1/2 γh H>0 2µH H=0 µh I z =+3/2 I z =+1/2 I z = 1/2 I z = 3/2 γh H>0 2µH H=0
C: PC H19 A5 2.BUN Ohm s law
C: PC H19 A5 2.BUN 19 8 6 3 19 3.1........................... 19 3.2 Ohm s law.................... 21 3.3.......................... 24 4 26 4.1................................. 26 4.2.................................
橡Taro11-報告書０.PDF
Research Center RC 2001 5-1- RC RC NHK -2- -3- 00/12/16 RC 01/01/07 RC 01/01/21 1 13 01/02/11 2 9 01/02/10 01/02/14 01/02/19 01/02/25 3 7 01/03/10 4 8 01/03/23 5 8 01/04/29 2001/01/07-4- -5- RC 1990 RC
P F ext 1: F ext P F ext (Count Rumford, ) H 2 O H 2 O 2 F ext F ext N 2 O 2 2
1 1 2 2 2 1 1 P F ext 1: F ext P F ext (Count Rumford, 1753 1814) 0 100 H 2 O H 2 O 2 F ext F ext N 2 O 2 2 P F S F = P S (1) ( 1 ) F ext x W ext W ext = F ext x (2) F ext P S W ext = P S x (3) S x V V
QCL_Accse_J.pdf
CW QCL HHL QCL TO-8 TEC * 1 (DC) * 3 TEC -8 A +8 A -1.9 A +1.9 A 24 V 24 V 8 A * 2 2.6 A * 2 NTC, 2 RTD 3 (Pt100) * 5 (W H D) -50 C +125 C / -50 C +150 C 0.01 C PID * 4 RS-232C, RS-424 0 C +40 C * 6-5
uPC2711TB,uPC2712TB DS
5 VIC Bipolar Analog Integrated Circuits µpc2711tb, µpc2712tbbsic 20122915 µpc2711tb, µpc2712tb µpc2711t, µpc2712t NESAT TM ft = 20 GHz IC fu = 2.9 GHz TYP.µPC2711TB fu = 2.6 GHz TYP.µPC2712TB GP = 13
t θ, τ, α, β S(, 0 P sin(θ P θ S x cos(θ SP = θ P (cos(θ, sin(θ sin(θ P t tan(θ θ 0 cos(θ tan(θ = sin(θ cos(θ ( 0t tan(θ
4 5 ( 5 3 9 4 0 5 ( 4 6 7 7 ( 0 8 3 9 ( 8 t θ, τ, α, β S(, 0 P sin(θ P θ S x cos(θ SP = θ P (cos(θ, sin(θ sin(θ P t tan(θ θ 0 cos(θ tan(θ = sin(θ cos(θ ( 0t tan(θ S θ > 0 θ < 0 ( P S(, 0 θ > 0 ( 60 θ
LMC6022 Low Power CMOS Dual Operational Amplifier (jp)
Low Power CMOS Dual Operational Amplifier Literature Number: JAJS754 CMOS CMOS (100k 5k ) 0.5mW CMOS CMOS LMC6024 100k 5k 120dB 2.5 V/ 40fA Low Power CMOS Dual Operational Amplifier 19910530 33020 23900
jse2000.dvi
pn 1 2 1 1947 1 (800MHz) (12GHz) (CPUDSP ) 1: MOS (MOSFET) CCD MOSFET MES (MESFET) (HBT) (HEMT) GTO MOSFET (IGBT) (SIT) pn { 3 3 3 pn 2 pn pn 1 2 sirafuji@dj.kit.ac.jp yoshimot@dj.kit.ac.jp 1 3 3.1 III
14 10 15 14 10 15 46.7 14 8 14 3 1 14 8 31 1 14 8 80,956 454,528 2.9 3.4 14,550 2.7 14,227 2.4 13 8 78,658 439,432 14,956 14,571 14 2 153,889 860,441 24,545 23,378 1 ( ) - 1-1 14 8 7,262 6.1 84 28 13 8
π + e + ν e
π + e + ν e 2 2013 2 5 π + e + ν e π + µ + ν µ R = Γ(π + e + ν e )/Γ(π + µ + ν µ ) 0.1% PIENU 2009 TRIUMF R 0.01% 10 R 0.1% 1000TeV PIENU 0.1% 1980 TRIUMF π + e + ν e π + µ + ν µ KEK COPPER 500MHz Flash
1 3 1.1 PET..................................... 3 1.1.1......................................... 3 1.1.2 PET................................. 4 1.2..
21 PET 06S2037G 2010 3 1 3 1.1 PET..................................... 3 1.1.1......................................... 3 1.1.2 PET................................. 4 1.2........................................
µµ InGaAs/GaAs PIN InGaAs PbS/PbSe InSb InAs/InSb MCT (HgCdTe)
1001 µµ 1.... 2 2.... 7 3.... 9 4. InGaAs/GaAs PIN... 10 5. InGaAs... 17 6. PbS/PbSe... 18 7. InSb... 22 8. InAs/InSb... 23 9. MCT (HgCdTe)... 25 10.... 28 11.... 29 12. (Si)... 30 13.... 33 14.... 37
i
14 i ii iii iv v vi 14 13 86 13 12 28 14 16 14 15 31 (1) 13 12 28 20 (2) (3) 2 (4) (5) 14 14 50 48 3 11 11 22 14 15 10 14 20 21 20 (1) 14 (2) 14 4 (3) (4) (5) 12 12 (6) 14 15 5 6 7 8 9 10 7
最新耐震構造解析 ( 第 3 版 ) サンプルページ この本の定価 判型などは, 以下の URL からご覧いただけます. このサンプルページの内容は, 第 3 版 1 刷発行時のものです.
最新耐震構造解析 ( 第 3 版 ) サンプルページ この本の定価 判型などは, 以下の URL からご覧いただけます. http://www.morikita.co.jp/books/mid/052093 このサンプルページの内容は, 第 3 版 1 刷発行時のものです. i 3 10 3 2000 2007 26 8 2 SI SI 20 1996 2000 SI 15 3 ii 1 56 6
B
B07557 0 0 (AGN) AGN AGN X X AGN AGN Geant4 AGN X X X (AGN) AGN AGN X AGN. AGN AGN Seyfert Seyfert Seyfert AGN 94 Carl Seyfert Seyfert Seyfert z < 0. Seyfert I II I 000 km/s 00 km/s II AGN (BLR) (NLR)
0.45m1.00m 1.00m 1.00m 0.33m 0.33m 0.33m 0.45m 1.00m 2
24 11 10 24 12 10 30 1 0.45m1.00m 1.00m 1.00m 0.33m 0.33m 0.33m 0.45m 1.00m 2 23% 29% 71% 67% 6% 4% n=1525 n=1137 6% +6% -4% -2% 21% 30% 5% 35% 6% 6% 11% 40% 37% 36 172 166 371 213 226 177 54 382 704 216
10 117 5 1 121841 4 15 12 7 27 12 6 31856 8 21 1983-2 - 321899 12 21656 2 45 9 2 131816 4 91812 11 20 1887 461971 11 3 2 161703 11 13 98 3 16201700-3 - 2 35 6 7 8 9 12 13 12 481973 12 2 571982 161703 11
II K116 : January 14, ,. A = (a ij ) ij m n. ( ). B m n, C n l. A = max{ a ij }. ij A + B A + B, AC n A C (1) 1. m n (A k ) k=1,... m n A, A k k
: January 14, 28..,. A = (a ij ) ij m n. ( ). B m n, C n l. A = max{ a ij }. ij A + B A + B, AC n A C (1) 1. m n (A k ) k=1,... m n A, A k k, A. lim k A k = A. A k = (a (k) ij ) ij, A k = (a ij ) ij, i,
ADC121S Bit, ksps, Diff Input, Micro Pwr Sampling ADC (jp)
ADC121S625 ADC121S625 12-Bit, 50 ksps to 200 ksps, Differential Input, Micro Power Sampling A/D Converter Literature Number: JAJSAB8 ADC121S625 12 50kSPS 200kSPS A/D ADC121S625 50kSPS 200kSPS 12 A/D 500mV
- γ 1929 γ - SI γ 137 Cs 662 kev γ NaI active target NaI γ NaI 2 NaI γ NaI(Tl) γ 2 NaI γ γ γ
- 28 2 15 - γ 1929 γ - SI γ 137 Cs 662 kev γ NaI active target NaI γ NaI 2 NaI γ NaI(Tl) γ 2 NaI γ γ 10 3 4 γ 1 3 2 γ 5 2.1..................................... 5 2.1.1.................... 5 2.1.2..............................
90 120.0 80 70 72.8 75.1 76.7 78.6 80.1 80.1 79.6 78.5 76.8 74.8 72.4 69.5 95.6% 66.4 100.0 60 80.0 50 40 60.0 30 48.3% 38.0% 40.0 20 10 10.4% 20.0 0 S60 H2 H7 H12 H17 H22 H27 H32 H37 H42 H47 H52 H57 0.0
総務委員会会議録
13 98 27 6 4 2020 28 3 284 2016 9827 282 282 1098 276 282 1 9827 6 2726 9827 6 120 24,5873,000 24,5873,000 36,881 36,881 1 2 36,881 36,881 36,881 2726 9827 6 1 120 252 252 336336 IT 336 IT17 37155247
16-Bit, Serial Input Multiplying Digital-to-Analog Converter (Rev. B
DAC8811 www.tij.co.jp ± ± µ ± µ ± V REF CS Power-On Reset DAC8811 D/A Converter 16 DAC Register 16 R FB I OUT CLK SDI Shift Register GND DAC8811C ±1 ±1 MSOP-8 (DGK) 4to 85 D11 DAC8811ICDGKT DAC8811C ±1
uPC2745TB,uPC2746TB DS
Bipolar Analog Integrated Circuits 3 V IC µpc275tb, µpc27tb IC3 V V NESAT ft = 2 GHz IC VCC = 2.73.3 V VCC = 3.3 V µpc275tbfu = 2.7 GHz TYP. @3 db µpc27tbfu = 1.5 GHz TYP. @3 db µpc275tbisl = 38 db TYP.
第１部 一般的コメント
(( 2000 11 24 2003 12 31 3122 94 2332 508 26 a () () i ii iii iv (i) (ii) (i) (ii) (iii) (iv) (a) (b)(c)(d) a) / (i) (ii) (iii) (iv) 1996 7 1996 12
...J......1803.QX
5 7 9 11 13 15 17 19 21 23 45-1111 48-2314 1 I II 100,000 80,000 60,000 40,000 20,000 0 272,437 80,348 82,207 81,393 82,293 83,696 84,028 82,232 248,983 80,411 4,615 4,757 248,434 248,688 76,708 6,299
VUV MPPC study
VUV MPPC の性能評価 2014/12/5 B02 班主催第 2 回若手研究者ミニ研究会 @ 名古屋大学 早大寄田研 ANKOK 実験 M2 鷲見貴生 暗黒物質 (WIMP) とその直接探索 暗黒物質存在の示唆 宇宙論的観測 ( 宇宙背景輻射 大規模構造 etc.) 天文学的観測 ( 銀河の回転曲線 重力レンズ etc.) 標準模型を超える理論 (SUSY, 超弦理論 etc.) 暗黒物質の存在はほとんど揺るぎない事実
PET. PET, PET., PET 1, TPC 3.,. TPC,,.
PET TPC 21 2 9 PET. PET, PET., PET 1, TPC 3.,. TPC,,. 1 6 2 PET 7 2.1........................... 7 2.1.1 PET..................... 7 2.1.2.......................... 10 2.2..............................
B1 Ver ( ), SPICE.,,,,. * : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD
![B1 Ver ( ), SPICE.,,,,. * : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD](/thumbs/101/152175529.jpg "B1 Ver ( ), SPICE.,,,,. * : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD")
B1 er. 3.05 (2019.03.27), SPICE.,,,,. * 1 1. 1. 1 1.. 2. : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD https://www.orcad.com/jp/resources/orcad-downloads.. 1 2. SPICE 1. SPICE Windows
. ev=,604k m 3 Debye ɛ 0 kt e λ D = n e n e Ze 4 ln Λ ν ei = 5.6π / ɛ 0 m/ e kt e /3 ν ei v e H + +e H ev Saha x x = 3/ πme kt g i g e n
003...............................3 Debye................. 3.4................ 3 3 3 3. Larmor Cyclotron... 3 3................ 4 3.3.......... 4 3.3............ 4 3.3...... 4 3.3.3............ 5 3.4.........
LLG-R8.Nisus.pdf
d M d t = γ M H + α M d M d t M γ [ 1/ ( Oe sec) ] α γ γ = gµ B h g g µ B h / π γ g = γ = 1.76 10 [ 7 1/ ( Oe sec) ] α α = λ γ λ λ λ α γ α α H α = γ H ω ω H α α H K K H K / M 1 1 > 0 α 1 M > 0 γ α γ =
-1-1 1 1 1 1 12 31 2 2 3 4
2007 -1-1 1 1 1 1 12 31 2 2 3 4 -2-5 6 CPU 3 Windows98 1 -3-2. 3. -4-4 2 5 1 1 1 -5- 50000 50000 50000 50000 50000 50000 50000 50000 50000 50000-6- -7-1 Windows 2 -8-1 2 3 4 - - 100,000 200,000 500,000
LMC555 CMOSタイマ
CMOS 555 CMOS (SOIC MSOP MDIP) micro SMD (8 micro SMD) LM555 2 1 LMCMOS TM CMOS 19850925 24100 ds008669 Converted to nat2000 DTD added title to the 2 avos on the first page Edited for 2001 Databook fixed
表1票4.qx4
iii iv v 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 22 23 10 11 24 25 26 27 10 56 28 11 29 30 12 13 14 15 16 17 18 19 2010 2111 22 23 2412 2513 14 31 17 32 18 33 19 34 20 35 21 36 24 37 25 38 2614
ASB-3000 ユーザーズマニュアル
ASB-001-081204 Magic LAB ADTEK SYSTEM SCIENCE Co.,Ltd. 1 1 1 2 3 4 5 7 8 8 9 10 10 14 MagicScope 16 16 19 21 25 28 29 29 29 Function 30 30 30 30 30 31 31 32 33 34 36 36 37 37 38 39 40 41 43 function 1
第１章 国民年金における無年金
1 2 3 4 ILO ILO 5 i ii 6 7 8 9 10 ( ) 3 2 ( ) 3 2 2 2 11 20 60 12 1 2 3 4 5 6 7 8 9 10 11 12 13 13 14 15 16 17 14 15 8 16 2003 1 17 18 iii 19 iv 20 21 22 23 24 25 ,,, 26 27 28 29 30 (1) (2) (3) 31 1 20
気体を用いた荷電粒子検出器
2009/12/7 物理学コロキウム第 2 気体を用いた荷電粒子検出器 内容 : 1. 研究の目的 2. 気体を用いた荷電粒子検出器 3. 霧箱での α 線の観察 4. 今後の予定 5. まとめ 柴田 陣内研究室 寄林侑正 2009/12/7 1 1. 研究の目的 気体の電離作用を利用した荷電粒子検出器の原理を学ぶ 実際に霧箱とスパークチェンバーを作成する 放射線を観察し 荷電粒子と気体粒子の相互作用について学ぶ
Note.tex 2008/09/19( )
1 20 9 19 2 1 5 1.1........................ 5 1.2............................. 8 2 9 2.1............................. 9 2.2.............................. 10 3 13 3.1.............................. 13 3.2..................................