DS

FUJITSU SEMICONDUCTOR DATA SHEET DS4 272 1 ASSP (AC / DC ) BIPOLAR, IC,, 2 ma, 5 V SOP 16 1 AC/DC Copyright 1986-211 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 211.5

(TOP VIEW) IN1 1 16 IN2 IN1 2 15 IN2 FB 3 14 VREF DT 4 13 OC CT 5 12 VCC RT 6 11 C2 GND 7 1 E2 C1 8 9 E1 (FPT-16P-M6) OC 13 RT IN1 IN1 IN2 IN2 6 CT 5 DT FB =.2 V 4 1 2 16 15 3 OSC 1 A1 A2 2 Q T Q PWM 8 9 11 1 12 14 7 C1 E1 C2 E2 VCC VREF GND 2 DS4 272 1

VCC 41 V VCE 41 V ICE 25 ma VI VCC.3 V * PD Ta 25 C 62 mw Ta 3 85 C Tstg 55 125 C : 4 cm (1.5 mm ),, 3 cm 4 cm (.5 mm ) (,, ),, VCC 7 15 32 V VCE 4 V ICE 5 2 ma VIN.3 VR VCC 2 V FB ISINK.3 ma FB ISOURCE 2 ma IREF 5 1 ma RT 1.8 3 5 kω CT 47 1 1 6 pf fosc 1 4 3 khz Ta 3 25 85 C,,,,,,, DS4 272 1 3

(VCC = 15 V, Ta = 25 C) VREF IO = 1 ma 4.75 5. 5.25 V ΔVR(IN) 7 V VCC 4 V, Ta = 25 2 25 mv ΔVR(LD) 1 ma IO 1 ma, Ta = 25 1 15 mv ΔVR/T 2 Ta 85 ±2 ±75 μv/ ISC 15 4 ma 4.3 V.3 V fosc RT = 3 k, CT = 1 pf 36 4 44 khz RT = 3 k, CT = 1 pf ±3 % 7 V VCC 4 V, Ta = 25 ±.1 % Δfosc/ΔT 2 Ta 85 ±.1 %/ ID VI 5.25 V 2 1 μa ( ) VI = 4 45 % % VDO 3. 3.3 V VDM V VIO VO (pin3) = 2.5 V ±2 ±1 mv IIO VO (pin3) = 2.5 V ±25 ±25 na II VO (pin3) = 2.5 V.2 1. μa VCM 7 V VCC 4 V.3 VCC 2 V AV.5 V VO 3.5 V 7 95 db BW AV = 1 8 khz CMR VCC = 4 V 65 8 db (3 ) ISINK 5 V VID 15 mv, VO =.7 V.3.7 ma ISOURCE 15 mv VID 5 V, VO = 3.5 V 2 1 ma ICO VCE = 4 V, VCC = 4 V 1 μa IEO VCC = VC = 4 V, VE = 1 μa VSAT(C) VE =, IC = 2 ma 1.1 1.3 V VSAT(E) VC = 15 V, IE = 2 ma 1.5 2.5 V IOPC VI = VREF 1.3 3.5 ma 4 DS4 272 1

P W M (VCC = 15 V, Ta = 25 C) VTH % 4 4.5 V (3 ) ISINK VO (pin3) =.7 V.3.7 ma ( ) ICC V(pin 4) = 2 V, 8 ma ICCQ V (pin6) = VREF, 7 12 ma tr RL = 68 1 2 ns tf RL = 68 25 1 ns tr RL = 68 1 2 ns tf RL = 68 4 1 ns VCC = 15V 15 Ω /2 W 15 Ω /2 W TEST INPUT VD VC 3 kω 1 pf 5 kω DT FB RT VCC C1 E1 C2 CT E2 IN1 IN1 IN2 IN2 VREF OC GND OUTPUT 1 OUTPUT 2 DS4 272 1 5

CT = 3. V VC VD = V OUTPUT 1 ON ON ON ON OUTPUT 2 ON ON ON f OSC = 1.2 RT CT RT : kω CT : µf f OSC : khz OC GND VREF 6 DS4 272 1

V REF (V) 6 5 4 3 2 1 VREF ΔVREF IO = 1 ma 5 5 ΔVREF (mv) ΔVREF(mV) 1 1 2 VCC = 15 V IO = 1 ma 1 2 3 4 VCC (V) 3 25 25 5 75 1 Ta ( C) 1 M 5 k RT, CT VCC =15 V 2 k fosc (HZ) 1 k 5 k 2 k 1 k 5 k 2 k 1 k.1μf.1μf CT = 47 pf 1 pf 2 k 5 k 1 k 2 k 1 k 2 k 5 k RT (Ω) ( ) ( ) TON/T(%) 1 2 3 4 VCC = 15 V CT = 1 pf RT = 3 kω OC = VREF Ta = C Ta = 25 C Ta = 7 C TON/T(%) 2 4 6 8 VCC = 15 V CT = 1 pf RT = 3 kω OC = GND Ta = C Ta = 25 C Ta = 7 C 5 1 2 3 VD (V) 1 1 2 3 VD (V) DS4 272 1 7

AV (db) 1 9 8 7 6 5 4 3 2 1 1 1 1 k 1 k 1 k 1 M f (HZ) VCC = 15 V ΔVO = 3 V VOL (V).8 Ta = 7 C.6.4.2 Ta = 7 C VOL VCC = 15 V Ta = C Ta = 25 C.5 5 Ta = C Ta = 25 C 1. 1 IOL, IOH (ma) VOH 5 4 3 2 1 1.5 15 IOL IOH VOH (V) 1.2 VCC = 15 V 1.8 VCC = 15 V VSAT C(V) 1..8.6 Ta = 25 C Ta = C Ta = 7 C VSAT (E) (V) 1.6 1.4 1.2 Ta = C Ta = 25 C Ta = 7 C.4 1. 5 1 15 2 5 1 15 2 IC (ma) IE (ma) 6 1 VOUT (V) 5 4 3 2 1 8 5 V 4 Ω VOUT ICC,ICCQ (ma) 7.5 5 2.5 ICC ICCQ 1 2 3 4 5 6 1 2 3 4 VREF (V) VCC (V) 8 DS4 272 1

PD (mv) 1 8 6 4 Ta = 25 C (2, 1) (IO, IR) (ma) (1, 1) (2, 5) (1, 5) (1, ) (, ) PD (mw) 1 8 6 4 SOP 2 2 1 2 3 4 VCC (V) 2 4 6 8 1 Ta ( C) DS4 272 1 9

,,, D Q, L Q, Q,,, Q, VIN LC, Q L, D, LC, VO Ton VO = Ton Toff VIN = Ton T VIN Q : ON L Q Q : OFF VIN D C VO RL Q : D :, (Ton/T), VIN, L, Q, D, IIN Q IIN = Ton T IO Q D, η = PO 1 (%) PIN VO IO = 1 VIN IIN VIN IO Ton / T = 1 VIN IO Ton / T = 1 (%) 1 (%),,,, 1 DS4 272 1

1.,,,, ASO(Area of Safe Operation : ) ( : tr, tstg, tf),, VCE IC,,,,, 2, 1,, VIN 2 IN IC VCE Q D L C VO IN D1 L C VO D2 IC IC on on VIN off VCE off VIN 2 VIN VCE VCE Ton 2 VIN VCE Ton VIN t t IC Ton IC Ton t t DS4 272 1 11

, ASO (2SC358A), ASO,, ASO, ASO,,,, 2SC358A (45 V, 3 A) 5 IC (Pulse) max. IC max. TC = 25 C 2 D.C. Pw=5µs 1 1 ms 1 ms IC (A) 5 2 1.5.2.1.5 5 1 2 5 1 2 5 1 VCE (V) 2.,,, 2,, ( ), trr tr 12 DS4 272 1

1. FB (3 ),, FB (3 ),, ( ),,, OUT R1 VREF RIN Vo R2 RF 2., CT (5 ) GND (7 ),, CT (5 ), IC IC, IC, RT CT VREF RT CT DS4 272 1 13

3. FB,, VREF DT (4 ) DT, 3.V,. V, DT (.2V) ( ) (%) = 3.V - (Vdt.2V) 3.V 2.8V - Vdt 5 = 5 3.V (%) = 3.V - (Vdt.2V) 3.V 2.8V - Vdt 1 = 1 3.V, Vdt=. V DT Vdt(V)= Rb Ra Rb VREF VREF DT 14 4 Ra Rb Vdt 14 DS4 272 1

4. (DT) (4 ) Cd VREF DT Rd Cd, DT VREF (14 ),, Cd Rd DT (4 ),,, OR Cd Rd R1 R2 VREF DT 5. ( ) (1) R3 VIO VREF D R1 RS R5 IO VO VO1 VO R4 R2 GND IL3 IL2 IL1 IO DS4 272 1 15

IL1 R4 VO > R3 R4, R1 RS IL1 = VO VIO R1 R2, VIO 1 mv VIO 1mV IL1, IL1 ±1%,, (1), 1 R1 VIO IO = ( VO VEE ) ( R2 >> R1 ) RS R1 R2 RS 1 mv IL2, (1) VO ) R1 IL1 = R1 R2 R1 IL2 = R1 R2 VREF VO RS VIO (1) (,R2 >> R1) RS R4 / (R3 R4) VREF VD RS R4 R3 R4 VIO RS VREF VD (VD IL3 VO =, R2 R1 RS R5 R4R5 VREF R3R5 VD R4R5 VD RS IL3 = VIO R3R4 R3R5 R4R5 1 1 R4 VIO IL3 = ( VREF VD ) (2) RS 1 (R 3 // R 4) / R5 R3 R4 RS R3//R4 R3, R4 R3R4/(R3 R4), R3//R4 R5 (2), IL3 C = 1 R4 ( VREF VD ) R3 R4 RS VIO RS, R3, R4, R5 D VO = IL3, R3, R4, R5, D, IO, R1 VO VIO IO = R1 R2 RS RS VO =, IO = VIO/RS, VIO,,,, VO RS IO VO VIO > VIO < R1 VO VIO R2 GND IL1 IO 16 DS4 272 1

(2) R3 VREF R1 RS IO VO VO VO R1 R1R2 > R4 R3R4 VIO R4 R1 R1R2 < R4 R3R4 R2 GND IL1 IO IO, IO = 1 R1 R4 R4 [(R1 ) VO VREF VIO ] (R2 >> R1) R2 R3 R4 R3 R4 RS, VO VREF, R3, R4, 2 μa (3) RS IO VO VO R1 VO VIO VO R2 VEE I L5 I L1 IO IO, 1 IO = RS R1 R1 R2 (VO VEE) VIO (R2 >>R1) RS, VO,.3 V R1 3 mv DS4 272 1 17

6. (1) VIN VIN R VZ VCC C VZ VCC VCC = VZ VCC = VIN VZ (2) REG. AC VCC 7., IC (7 ), (.5 V), IC,, IC, (1), 8 9 11 1 SBD 18 DS4 272 1

(2), 8 11 14 7.5 kω =.7 V 1.2 kω.1 µf (3), VCC 8 9 DS4 272 1 19

8. (1) 1 Ω AC 1 V 15 V 5 Ω 1 mh 24 V 2.5 A 1 kω 2 kω 16 kω 5.1 kω 1 kω 1 kω.22 μf 2.2 kω 1 μf 5.6 kω 47 kω VCC FB IN1 IN1 VREF IN2 IN2 DT GND E1 C1 C2 E2 RT CT OC 2 kω 22 μf 5.1 kω 3 Ω 22 pf 5 kω.1 Ω 2 DS4 272 1

(2) AC 1 V 15 V A 24 V 2.5 A 33 Ω 1Ω 22 µf 33 Ω 1Ω.1 Ω B A 1 kω 16 kω 5.1 kω.22 µf 1 µf 47 kω 5.1 kω 1 kω 1 kω 2.2 kω 5 kω 5.6 kω 3 Ω FB IN1 IN1 VREF VCC IN2 IN2 DT GND E1 C1 C2 E2 RT CT OC REF 22 pf 2 kω B DS4 272 1 21

25 kω 1 MΩ.3 V LSI 22 DS4 272 1

PF SOP, 16 (FPT-16P-M6) DS4 272 1 23

RoHS ( ) LSI, RoHS,, PBB PBDE, E1 ( ) INDEX XXXX XXX E1 SOP-16 ( ) JEITA JEDEC MB123456P - 789 - GE1 (3N) 1MB123456P-789-GE1 1 G Pb (3N)2 1561195 1721 QC PASS 1, PCS MB123456P - 789 - GE1 26/3/1 ASSEMBLED IN JAPAN MB123456P - 789 - GE1 1/1 1561195 65 - Z1A 1 E1 ASSEMBLED IN CHINA 24 DS4 272 1

PF IR ( ) ( ) 2 2 2 8 (125 C, 24 h), 8 5 C 3 C, 7RH ( ) (1) IR ( ) 26 C 255 C 17 C ~ 19 C RT (b) (c) (d) (e) (a) (d') H 26 C Max (a) (b) (c) (d) (d ) (e) 1 C/s 4 C/s 17 C 19 C, 6s 18s 1 C/s 4 C/s 26 C Max 255 C up 1s 23 C up 4s or 225 C up 6s or 22 C up 8s ( ) (2) ( ) Max 4 C 5 s / DS4 272 1 25

プラスチック SOP, 16 ピンリードピッチ 1.27 mm パッケージ幅 パッケージ長さ リード形状 5.3 1.15 mm ガルウィング 封止方法 プラスチックモールド 取付け高さ 2.25 mm MAX 質量.2 g (FPT-16P-M6) コード ( 参考 ) P-SOP16-5.3 1.15-1.27 プラスチック SOP, 16 ピン (FPT-16P-M6) 16 * 1 1.15.25.2.4.1.8 9 注 1)*1 印寸法はレジン残りを含む 注 2)*2 印寸法はレジン残りを含まず 注 3) 端子幅および端子厚さはメッキ厚を含む 注 4) 端子幅はタイバ切断残りを含まず.3.17.4.7.1.2 INDEX * 2 5.3±.3 7.8±.4 (.29±.12) (.37±.16) Details of "A" part 2..25.15.79.1.6 (Mounting height) 1 8 "A".25(.1) 1.27(.5).47±.8 (.19±.3).13(.5) M ~8.5±.2 (.2±.8).6±.15 (.24±.6).1.1.5.4.4.2 (Stand off).1(.4) C 22-21 FUJITSU SEMICONDUCTOR LIMITED F1615S-c-4-9 単位 :mm(inches) 注意 : 括弧内の値は参考値です, URL http://edevice.fujitsu.com/package/jp-search/ 26 DS4 272 1

MEMO DS4 272 1 27

222-33 2-1-23 http://jp.fujitsu.com/fsl/ 12-198-61 : 9 17 (, ) PHS,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,