ダイオード中小型編 応用上の注意
|
|
- みひな いんそん
- 5 years ago
- Views:
Transcription
1 2-1
2
3 : ~2 AC1 V 2 V AC2 V 4 V AC1 V 4 V AC2~24 V 6~8 V (Tj max) ( ) ( 2.1) ( 2.2) Ta max ( C) Ta max I F (AV) カ ラス エホ キシ (t=1.6mm) 基板実装 1 2 基板サイス 5mm 5mm 半田ラント サイス 12.1mm 1.4mm26mm 6mm セラミック基板実装 (t=.64mm) 3 基板サイス 5mm 5mm 半田ラント サイス 2.mm 2.mm PF (AV) (W) P F (AV) I F (AV) I F (AV) (A) I F (AV) (A)
4 : 2.3 α % 1 if vf rth (j-c) t rth (j-a), rth (j-l) t ( Tj) Tj max ( P2-14~P2-2 ) (%) α α = Ipeak IFAV α ( ) 2.3 ( 2.1) 2-4
5 : 2.1 DC AC (RMS) 1 / / E RMS E AVG 1~ 3.14 E AVG 12.1 E RMS 2.22E AVG 1 2 ~ I AVG 1.57I AVG 3.14I AVG E AVG 1.41E RMS E AVG E AVG 1~ 1.57E AVG 48 E RMS 2E RMS.5I AVG.785I AVG 1.57I AVG I AVG 2.I AVG E AVG 2.22E AVG 1 2 ~ 3.14E AVG 2.82E RMS E RMS E AVG 1~ 1.57E AVG 48 E RMS E RMS.5I AVG.785I AVG 1.57I AVG I AVG 1.I AVG E AVG 1.11E AVG 1 2 ~ 1.57E AVG 1.41E RMS E RMS 3 E AVG 1~ 1.21E AVG 18.3 E RMS 1.73E RMS.333I AVG.587I AVG 1.21I AVG I AVG 1.I AVG E AVG 1.48E AVG 1 3 ~ 2.9E AVG 2.45E RMS 2-5
6 DC AC (RMS) 1 : / / E RMS 3 E AVG 1~ 1.5E AVG 4.3 E RMS 1.73E RMS.333I AVG.579I AVG 1.5I AVG I AVG 1.I AVG E AVG.74E AVG 1 3 ~ 1.5E AVG 2.45E RMS E RMG E AVG + 1~ 1.5E AVG 4.3 E RMS.74E AVG () 2E RMS 1.48E AVG 1 6 ~.167I AVG.49I AVG 1.5I AVG I AVG 1.I AVG E AVG 2.83E RMS 2E RMS 6 E RMG 2E RMS E AVG 1~ 1.5E AVG 4.3 E RMS.855E AVG () 2E RMS 1.71E AVG 1 3 ~.167I AVG.293I AVG.525I AVG I AVG.5I AVG E AVG 2.45E RMS
7 : (IRRM) (1) IRRM IRRM (2-4) (Tj) IRRM qv Is exp...(2-4) 2 K Tj Tj : (: K) K : q : V : IRRM 2.4 (2-4) () Ta (max) (Tj) (2-5) Tj = Ta (max) + Tj...(2-5) Tj = PF (AV) Rth (j-a) PF (AV): (W) Rth (j-a): ( C/W) Tj IRRM (Tj) CMG7 IF (AV) =.2 A; Ta (max) = 5 C Tj = 6 C Tj IRRM (Tj) 2.4 IRRM (Tj) = 11 µa IRRM (Tj) (2) IRRM SBD HED FRD IRRM () 2-7
8 : 3 : VRRM = 4 V IRRM (µa) T j ( C) 2.4 CMG7 I RRM -T j (3) (SBD) ( SBD) (VF) (IR) DC-DC SBD (1) VF (2) IR IR IR SBD AC DC-DC 2-8
9 : (4) 2.5 D5 (D6) R1 (Tr) (R2 ) Tr (VO) (D7) D1 (D2) IRRM IRRM IRRM R4 (AC 1 V ) R4 < = 1 kω D 6 R 1 D 1 D 7 D 5 V CC = 9 V R 4 I RRM 1 V D 2 D 3 D 4 C 1 C 2 R 2 R 3 V Tr 2.5 () 2-9
10 : P RR P FR P F I F V F I R (P) P R E I R t rr1 : t rr2 : t rr1 t rr2 t w t rr V C (P) 2.6 (1) PFR PFR ( ) VF ( 2.6 ) (forward recovery) (2) PRR PRR ( 2.6 ) PRR (2-6) PRR 1 IR (P) trr E f = QR E f...(2-6) 2 IR (P) : trr : E : ( ) QR : (2-6) (2-7) PRR 1 IR (P) trr2 E f...(2-7) 6 trr trr2 trr1 (2-6) 1/ Di FRD HED 2-1
11 : i : 1 A/div : 5 ns/div I FM = 15 A di/dt = 25 A/µs Ta = 25 C HED FRD D i t (a) (b) 2.7 D i FRD HED t rr ( ) i : 2 A/div : 1 ns/div I FM = 15 A di/dt = 25 A/µs Ta = 25 C HED FRD t (a) (b) 2.8 FRD HED t rr ( ) 2-11
12 : VZ 5 V 5 V 32 α T, γ Z V Z.1 ( 2.9) 28.9 VZ (2-8) γ I v R V = v 1 + Z Z Z th Z Z 1...(2-8) vz : IZ : () γz : %/ C αt (mv/ C) γz αt γz (%/ C) Rth : 4.3 VZ V Z (V) 2.9 rd IZ rd 2-12
13 : (a) : 1 µs/div : 1 V/div (b) 27 V : 1 µs/div : 1 V/div (c) 22 V : 1 µs/div : 1 V/div (2-9) t t = 1 PZ (t) dt...(2-9) PP 1 P RSM t W ( ) PRSM (W) 1 tw Ta = 25 C PRSM PZ (W) PP t W (ms) t t w (ms) t CMZ
14 : (Ta) (Tj max) 2.13 T j R th (j-c) T C R th (c-f) T F Tj P T Rth (c-a) Rth (f-a) R th (j-c) : () R th (c-a) : ( ) R th (c-f) : () R th (f-a) : ( ) Ta 2.13 Rth (f-a) 2.13 (2-1) ( Rth (c-f) + Rth (f-a)) ( R + R ) R R th (c-a) th (j-a) = Rth (j-c) +...(2-1) Rth (c-a) + th (c-f) th (f-a) Rth (j-a) Rth (j-a) = Rth (j-c) + Rth (c-a)...(2-11) Rth (c-a) (2-1) (2-12) Rth (j-a) = Rth (j-c) + Rth (c-f) + Rth (f-a)...(2-12) PT (W) Tj (2-13) Tj = PT (Rth (j-c) + Rth (c-f) + Rth (f-a)) + Ta...(2-13) 2-14
15 : PT (t) P1 P2 P T (t) t t1 t2 t3 (a) 2.14 Tj 2.15 Tj (t) 2.16 CMG (a) (c) ( ) Tj1 = P1 rth (t1)...(2-14) Tj2 = P1 [rth (t3) rth (t3 t1)] + P2rth (t3 t2)...(2-15) Tj1 Tj2 Ta t t1 t2 t3 (b) PT (t) P2 P1 t1 t t2 P1 P2 2.2 (c) 2.15 rth (j-a) ( C/W) r th (j-a) t 5mm 5mm 2.1mm 1.4mm 1.6mm 5mm 5mm 2.mm 2.mm.64mm 5mm 5mm 6.mm 6.mm 1.6mm t (s) 2.16 CMG7 2-15
16 : 2.2 (T R = ) R th = r th (t 1 ) = t 1 r th (t 1 t 2 ) = (t 2 t 1 ) (a) P + T J T R T j T R = P R th Tj TR P = Rth (b) P t t 1 + T R t t 1 Tt 1 Tt 2 t 2 Tt 1 T R = R r th (t 1 ) Tt 2 T R = P [r th (t 2 ) r th (t 2 t 1 )] Tt T P 1 R = rth (t1) (c) ( ) P t t 1 t 2 t 3 t 4 t 5 T R Tt Tt Tt t 1 t 2 t 3 t 4 t 5 Tt 1 T R = P r th (t 1 ) Tt 3 T R = P [r th (t 3 ) r th (t 3 t 1 ) + r th (t 3 t 2 )] Tt 5 T R = P [rth (t 5 ) r th (t 5 t 1 ) + r th (t 5 t 2 ) r th (t 5 t 3 ) + r th (t 5 t 4 )] (d) P t t 1 P 2 P 4 t 2 t 3 t 4 t 5 T R Tt 1 Tt 3 Tt 5 t 1 t 2 t 3 t 4 t 5 Tt 1 T R = P r th (t 1 ) Tt 3 T R = P r th (t 3 ) P r th (t 3 t 1 ) + P 2 r th (t 3 t 2 ) Tt 5 T R = P r th (t 5 ) P r th (t 5 t 1 ) + P 2 r th (t 5 t 2 ) P 2 r th (t 5 t 3 ) + P 4 r th (t 5 t 4 ) (e) ( ) P t p τ + T J T R t prth T j TR = P τ P = t prth τ t p + 1 τ t p + 1 τ rth ( τ + tp ) rth ( τ) + rth ( tp ) Tj TR r τ + ) τ) + ( ) th ( tp rth ( rth tp (f) ( ) P OL P DC t OL T R Tt OL t OL Tt OL T R = P DC R th + (P OL P DC ) r th (t OL ) TtOL TR PDCR POL = th + PDC rth (tol ) 2-16
17 : (T R = ) R th = r th (t 1 ) = t 1 r th (t 1 t 2 ) = (t 2 t 1 ) (g) () ( ) P P DC t P p > PDC τ t p τ t OL T R t OL Tt OL t p P T T = P R + P DC OL R DC th rth (tol ) + (1 tp/ τ rth ( τ rth ( τ + rth (tp) τ P Tt = OL TR PDC [Rth rth (tol )] P tp tp rth (tol ) + 1 rth ( τ + tp ) rth ( τ) + rth ( tp ) τ τ 2-17
18 : 2.17 (a) (b) PF (t) P P PF (t) P P t t t1 t2 t t3 t t t1 t2 t t3 (a) (b) t t = 1 P (t) dt...(2-16) P IF (AV) PF (AV) ( 2.18 (a)) 16 Tc max I F (AV) Tc max ( C) I F (AV) (A) (a) (b) DLZ47A 2-18
19 : 4 Hz Tc ( 2.18 (b)) Ta Rth (j-c) Rth (c-f) (2-17) Tc Ta ( ) Rth (f-a) < Rth (c-f)...(2-17) P 2~35 C (1) Rth (c-f) 5%~8% YG626 () R th (c-f) [ C/W] TO-22.3~.5 1.5~2. (5~1 µm) 2.~2.5 4.~
20 : (2) Rth (f-a) mm 2 mm ( C/W) mm 2 mm 1 mm 1 mm ( C/W) m/s 3 m/s (cm 2 ) (cm 2 )
21 : ( ) (1) µm 5 µm ( YG626) 2-21
22 : (2) 5 µm (3) () (4) (5) (6) 2.4 JEDEC 2.4 (max) TO-22AB 12-1E1A.6 N m TO-22 NIS 12-1C1A.6 N m TO-3P (N) 12-16D1A.8 N m TO-3P (N) IS 12-16E1A.6 N m 2-22
23 : I P = 1. A 7.6 ms 1 ms T 1 = 4.8 ms I P T = 1 ms T j Ta (2 ) T j = P p {NRth + (1 N) r th (T 1 + T) + r th (T 1 ) r th (T)} P p : N : T 1 /T r th (T 1 ) : T 1 r th (T) : T r th (T 1 + T) : T 1 + T R th (j-a) :
24 : % 63% P P tw t t t w = 2 (a) tw t t w =.63 t (b)
25 : RoHS RoHS 2-25
µµ InGaAs/GaAs PIN InGaAs PbS/PbSe InSb InAs/InSb MCT (HgCdTe)
1001 µµ 1.... 2 2.... 7 3.... 9 4. InGaAs/GaAs PIN... 10 5. InGaAs... 17 6. PbS/PbSe... 18 7. InSb... 22 8. InAs/InSb... 23 9. MCT (HgCdTe)... 25 10.... 28 11.... 29 12. (Si)... 30 13.... 33 14.... 37
More informationDS
FUJITSU SEMICONDUCTOR DATA SHEET DS4 272 1 ASSP (AC / DC ) BIPOLAR, IC,, 2 ma, 5 V SOP 16 1 AC/DC Copyright 1986-211 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 211.5 (TOP VIEW) IN1 1 16 IN2 IN1
More information4 小川/小川
B p p B pp M p T p M p Tp T pt T p T p T p p Tp T T p T p T pt p Tp p p p p p p p p T p p T T M M p p p p p p T p p p T T p T B T T p T T p T p T T T p T p p T p Tp T p p Tp T p T Tp T T p T p T p T p
More information小川/小川
T pt T T T T p T T T T T p T T T T T T p p T T T p p T p B T T T T T pt T Tp T p T T psp T p T p T p T p T p Tp T p T p T T p T T T T T T T Tp T p p p T T T T p T T T T T T T p T T T T T p p T T T T T
More informationuntitled
2009527 T 0 n T n( T 0 T) n : : T : 0.00016-1 : 0.0010-1 T : T 0 : T = 100T 0 = 30n = 80 V JIS 0 JIS Z 8710 200 T h V T h V T c T c 0.003 0.01 0.1 JIS C 1602 0.4 K -40 375 1.5 T -40 125 0.5 T ca T
More informationThe DatasheetArchive - Datasheet Search Engine
Bipolar Analog Integrated Circuit 3 IC 3 5 V, 8 V, 12 V, 15 V, 18 V, 24 V 6 1 A Marking Side TO-22 MP-45G 4 MIN. µpc1435 5 V µpc1435 3 SIP TO-22 MP-45G 1 2 3 1 INPUT 2 GND 3 OUTPUT µ PC1435HF TO-22 MP-45G
More informationELCODIS.COM - ELECTRONIC COMPONENTS DISTRIBUTOR
Bipolar Analog Integrated Circuit 3 IC 3 5 V, 8 V, 12 V, 15 V, 18 V, 24 V 6 1 A Marking Side TO-22 MP-45G 4 MIN. µpc1435 5 V µpc1435 3 SIP TO-22 MP-45G 1 2 3 1 INPUT 2 GND 3 OUTPUT µ PC1435HF TO-22 MP-45G
More information* 2
* 2 3 H2400 2 2 3 4 5 5 (at +25 ) H2400-00-0 H2400-0-0 H2400-20-0 420 3(X) (Y) 2-50 26 5 50 80 200 8.0 0.2 80 62 30 5 60 70.6 5 2. 4 0.3 3.2 8.0.3 2 6 3.5 5 +5 +50-20 +50 630 nm mm µa µa 300 µa/lm 400
More information64 3 g=9.85 m/s 2 g=9.791 m/s 2 36, km ( ) 1 () 2 () m/s : : a) b) kg/m kg/m k
63 3 Section 3.1 g 3.1 3.1: : 64 3 g=9.85 m/s 2 g=9.791 m/s 2 36, km ( ) 1 () 2 () 3 9.8 m/s 2 3.2 3.2: : a) b) 5 15 4 1 1. 1 3 14. 1 3 kg/m 3 2 3.3 1 3 5.8 1 3 kg/m 3 3 2.65 1 3 kg/m 3 4 6 m 3.1. 65 5
More informationRD2.0S~RD150S DS
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
More informationjse2000.dvi
pn 1 2 1 1947 1 (800MHz) (12GHz) (CPUDSP ) 1: MOS (MOSFET) CCD MOSFET MES (MESFET) (HBT) (HEMT) GTO MOSFET (IGBT) (SIT) pn { 3 3 3 pn 2 pn pn 1 2 sirafuji@dj.kit.ac.jp yoshimot@dj.kit.ac.jp 1 3 3.1 III
More informationMicrosoft Word - CTCWEB講座(4章照査)0419.doc
1912 1914 3 58 16 1 58 2 16 3 4 62 61 4 16 1 16 1914 ( 3) 1955 (30) 1961 (36) 1965 (40) 1970 (45) 1983 (58) 1992 ( 4) 1999 (11) 2004 (16) 2 1 2 3 4 5 6 7 8 9 1 10 2 11 12 13 14 15 16 17 18 19 20 21 22
More informationS E N S O R S September 2016 CCT CCT CCT CCT CCT CCT261631
S E N S O R S September 2016 CCT CCT406393 CCT354571 CCT323047 CCT272440 CCT261631 (2/13) ( ) ( ) ( ) AV (3/13) RoHS CCT RoHS HEMS BEMS FEMS CEMS CCT 406393-600 - 36-00 40 600 600A 36 36mm 63 W 300 300A
More informationc 2009 i
I 2009 c 2009 i 0 1 0.0................................... 1 0.1.............................. 3 0.2.............................. 5 1 7 1.1................................. 7 1.2..............................
More informationLLG-R8.Nisus.pdf
d M d t = γ M H + α M d M d t M γ [ 1/ ( Oe sec) ] α γ γ = gµ B h g g µ B h / π γ g = γ = 1.76 10 [ 7 1/ ( Oe sec) ] α α = λ γ λ λ λ α γ α α H α = γ H ω ω H α α H K K H K / M 1 1 > 0 α 1 M > 0 γ α γ =
More informationK E N Z U 2012 7 16 HP M. 1 1 4 1.1 3.......................... 4 1.2................................... 4 1.2.1..................................... 4 1.2.2.................................... 5................................
More information() 1 1 2 2 3 2 3 308,000 308,000 308,000 199,200 253,000 308,000 77,100 115,200 211,000 308,000 211,200 62,200 185,000 308,000 154,000 308,000 2 () 308,000 308,000 253,000 308,000 77,100 211,000 308,000
More informationThe Physics of Atmospheres CAPTER :
The Physics of Atmospheres CAPTER 4 1 4 2 41 : 2 42 14 43 17 44 25 45 27 46 3 47 31 48 32 49 34 41 35 411 36 maintex 23/11/28 The Physics of Atmospheres CAPTER 4 2 4 41 : 2 1 σ 2 (21) (22) k I = I exp(
More informationバイポーラパワートランジスタ
0- SEMONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/ Bipolar Power Transistor CONTENTS 7 7 8 9 0 7 7 8 8 9 9 0 0 O 0.... 7 SA08 SA0 TPC0 0/() 0 0 0 SC7 SC78 TPC0 TPCP SC7 (P) SA0 SA09 SA0
More informationM51995AP/AFP データシート
お客様各位 カタログ等資料中の旧社名の扱いについて 21 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
More information小川/小川
p TB T T T T TT TT TT M p pp p p M p M p T M p M p p Mp T p Tp M p p Mp M p M p M p M p p T p p T p p T p M p M p M p M p T ptp p M p p p M p p M p Tp Tp p p pp p T T Tp Tp p T p T p T p T p T p T p Mp
More information0.1 IEC 60598 1,000 IEC 60598-2 1,000V CIE 11.2 IEC 60598-2 IEC 60598-1 - 1 - IEC IEC 0.2 IEC 60598-1 IEC 60598-1 IEC ISO IEC 60061-2 IEC 60061-3 IEC 60065 1969 1995 1969 1995 1985 IEC 60068-2-63 1991
More informationuntitled
2009 7 29-30 1 2 + + = 1 = 1 ( = = 0) 3 Eb (, T ) exp[ C C 2 1 5 /( T )] 1 [ W/(m2μm)] : [ m] T : [K] C 1 = 3.743 10 8 [W m 4 /m 2 ] C 2 = 1.439 10 4 [ m K] 4 E b max max T 2897 m m K = 10 m 5 E E b E
More informationELECTRONIC COMPONENTS & DEVICES
CM DN/DR CF CT CX CD CA CU CM 21 W5R 15 1 A T CM DN/DR CF CT CX CD CA CU R5.5pF 1R 1pF 11 1pF 13 1pF 15 1µF JIS 3 63 5 15 15 168 F12 122 F13 1632 21 212 316 3216 32 3225 42 452 43 4532 52 572 55 575 E
More informationLT 低コスト、シャットダウン機能付き デュアルおよびトリプル300MHz 電流帰還アンプ
µ µ LT1398/LT1399 V IN A R G 00Ω CHANNEL A SELECT EN A R F 3Ω B C 97.6Ω CABLE V IN B R G 00Ω EN B R F 3Ω 97.6Ω V OUT OUTPUT (00mV/DIV) EN C V IN C 97.6Ω R G 00Ω R F 3Ω 1399 TA01 R F = R G = 30Ω f = 30MHz
More informationuntitled
... 1... 29... 31... 65 ... 152... 160... 162 ... 169 ... 201 1 2 3 4 玢 5 6 7 8 9 10 11 12 13 14 15 16 17 23 9 28 26 31 18 19 - - T.P.+ 1 21 3 8 22 3 1 18 2 8 41 2 T.P.+m 20 21 22 23 24 25 26 27 28 29
More informationGauss Gauss ɛ 0 E ds = Q (1) xy σ (x, y, z) (2) a ρ(x, y, z) = x 2 + y 2 (r, θ, φ) (1) xy A Gauss ɛ 0 E ds = ɛ 0 EA Q = ρa ɛ 0 EA = ρea E = (ρ/ɛ 0 )e
7 -a 7 -a February 4, 2007 1. 2. 3. 4. 1. 2. 3. 1 Gauss Gauss ɛ 0 E ds = Q (1) xy σ (x, y, z) (2) a ρ(x, y, z) = x 2 + y 2 (r, θ, φ) (1) xy A Gauss ɛ 0 E ds = ɛ 0 EA Q = ρa ɛ 0 EA = ρea E = (ρ/ɛ 0 )e z
More information128 3 II S 1, S 2 Φ 1, Φ 2 Φ 1 = { B( r) n( r)}ds S 1 Φ 2 = { B( r) n( r)}ds (3.3) S 2 S S 1 +S 2 { B( r) n( r)}ds = 0 (3.4) S 1, S 2 { B( r) n( r)}ds
127 3 II 3.1 3.1.1 Φ(t) ϕ em = dφ dt (3.1) B( r) Φ = { B( r) n( r)}ds (3.2) S S n( r) Φ 128 3 II S 1, S 2 Φ 1, Φ 2 Φ 1 = { B( r) n( r)}ds S 1 Φ 2 = { B( r) n( r)}ds (3.3) S 2 S S 1 +S 2 { B( r) n( r)}ds
More informationK 1 mk(
R&D ATN K 1 mk(0.01 0.05 = ( ) (ITS-90)-59.3467 961.78 (T.J.Seebeck) A(+ T 1 I T 0 B - T 1 T 0 E (Thermoelectromotive force) AB =d E(AB) /dt=a+bt----------------- E(AB) T1 = = + + E( AB) α AB a b ( T0
More informationOPA134/2134/4134('98.03)
OPA OPA OPA OPA OPA OPA OPA OPA OPA TM µ Ω ± ± ± ± + OPA OPA OPA Offset Trim Offset Trim Out A V+ Out A Out D In +In V+ Output In A +In A A B Out B In B In A +In A A D In D +In D V NC V +In B V+ V +In
More informationAN8032
IC,,,, 1 IC,,,,, MOSFET, MOSFET,,, TH 2.5 V V REF 23.3±0.3 U.V.L.O. comp. 6.0±0.3 1/8 V 9 6 2.4±0.25 9 8 7 6 5 4 3 2 1 0.3 +0.1 0.05 3.3±0.25 0.5±0.1 2.54 1.5±0.25 1.5±0.25 SIP009-P-0000C V CC Unit : mm
More information福岡大学人文論叢47-3
679 pp. 1 680 2 681 pp. 3 682 4 683 5 684 pp. 6 685 7 686 8 687 9 688 pp. b 10 689 11 690 12 691 13 692 pp. 14 693 15 694 a b 16 695 a b 17 696 a 18 697 B 19 698 A B B B A B B A A 20 699 pp. 21 700 pp.
More informationSO(2)
TOP URL http://amonphys.web.fc2.com/ 1 12 3 12.1.................................. 3 12.2.......................... 4 12.3............................. 5 12.4 SO(2).................................. 6
More informationPS2701-1, PS2701-2, PS DS
Photocoupler SOP NEPOC PS2701-1, PS2701-2, PS2701-4 GaAs LED IC BV = 3 7 Vr.m.s. SOP tr = 3 µs TYP., tf = 5 µs TYP. 1 PS2701-1-E3, E4, F3, F4 UL No. E72422 (S) VDE0884 IC PS2701-1 4 SOP PS2701-2 8 SOP
More informationuPC29M33A, 29M05A DS
Bipolar Analog Integrated Circuits μ PC9M33A, 9M5A μ PC9M33A9M5APNPIO =.5 A.5 V TYP. IC μ PCMxxA3.3V.5 A VDIF =.5 V TYP.I O =.5 A Marking Side μ PC9M33AHF, μ PC9M5AHFTO- MP-5G μ PC9M33AHB, μ PC9M5AHBSC-6MP-3
More information10 117 5 1 121841 4 15 12 7 27 12 6 31856 8 21 1983-2 - 321899 12 21656 2 45 9 2 131816 4 91812 11 20 1887 461971 11 3 2 161703 11 13 98 3 16201700-3 - 2 35 6 7 8 9 12 13 12 481973 12 2 571982 161703 11
More information0.45m1.00m 1.00m 1.00m 0.33m 0.33m 0.33m 0.45m 1.00m 2
24 11 10 24 12 10 30 1 0.45m1.00m 1.00m 1.00m 0.33m 0.33m 0.33m 0.45m 1.00m 2 23% 29% 71% 67% 6% 4% n=1525 n=1137 6% +6% -4% -2% 21% 30% 5% 35% 6% 6% 11% 40% 37% 36 172 166 371 213 226 177 54 382 704 216
More informationja111_rkw.fm
(1/) AC UL/C-UL/TÜV RoHS RRKWW1.5kW No.1 ///1///1.5kW768 EN-3-2W AC.-V EN82-2 FCC-BVCCI-B RV//1.5kW CE H 5F 1W PBDPEsPBBs 24V1W RoHS V W W W 1W A A A A 3.3 7 RKW3-7R 12 RKW3-12R 25 RKW3-25R 35 RKW3-35R
More informationC: PC H19 A5 2.BUN Ohm s law
C: PC H19 A5 2.BUN 19 8 6 3 19 3.1........................... 19 3.2 Ohm s law.................... 21 3.3.......................... 24 4 26 4.1................................. 26 4.2.................................
More informationII ( ) (7/31) II ( [ (3.4)] Navier Stokes [ (6/29)] Navier Stokes 3 [ (6/19)] Re
II 29 7 29-7-27 ( ) (7/31) II (http://www.damp.tottori-u.ac.jp/~ooshida/edu/fluid/) [ (3.4)] Navier Stokes [ (6/29)] Navier Stokes 3 [ (6/19)] Reynolds [ (4.6), (45.8)] [ p.186] Navier Stokes I Euler Navier
More informationuntitled
(a) (b) (c) (d) Wunderlich 2.5.1 = = =90 2 1 (hkl) {hkl} [hkl] L tan 2θ = r L nλ = 2dsinθ dhkl ( ) = 1 2 2 2 h k l + + a b c c l=2 l=1 l=0 Polanyi nλ = I sinφ I: B A a 110 B c 110 b b 110 µ a 110
More informationAN7551Z
BTL IC (35 W 4-ch) IC GND CR IC GND IC ( V CC GND ASO etc.) (STB-on/off ) (Mute-on/off ) AN7550NZ R1.8±0.1 (10.50) HZIP025-P-0980 Unit : mm 31.0±0.3 27.0±0.3 4.5±0.2 21.0±0.1 1.5±0.1 (10.50) φ3.6±0.1 3.6±0.1
More informationQ E Q T a k Q Q Q T Q =
i 415 q q q q Q E Q T a k Q Q Q T Q = 10 30 j 19 25 22 E 23 R 9 i i V 25 60 1 20 1 18 59R1416R30 3018 1211931 30025R 10T1T 425R 11 50 101233 162 633315 22E1011 10T q 26T10T 12 3030 12 12 24 100 1E20 62
More informationNJW4124 IC ( ) NJW4124 AC-DC 1cell/2cell IC / 1 NJW4124M / Bi-CMOS NJW4124M : DMP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 TX-SW 3 18 CS2 GND 4 17 VS PC 5 16 V
IC ( ) AC-DC 1cell/2cell IC / 1 M / Bi-CMOS M : DMP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 TX-SW 3 18 CS2 GND 4 17 VS PC 5 16 VREF ADP 6 15 V + 7 14 TDET 8 13 TH C1 9 12 TL C2 10 11 CHG-SW M - 1 - (Ta=25 C) V
More informationJ表紙.dpt
1 1. 1.1 440V 63A 1 2 3 4 5 6 IEC 61058-1 IEC 61058-2 IEC 61058-2 1.2 1.3 1.4 IEC 60669 IEC 61058-2 1.5 1.6 IEC 60730 2. IEC 61058 1 IEC 60034-1 1996 1 1 1997 2 1999 1 IEC 60038 1983 IEC IEC 60050(151)
More informationuntitled
( ) c a sin b c b c a cos a c b c a tan b a b cos sin a c b c a ccos b csin (4) Ma k Mg a (Gal) g(98gal) (Gal) a max (K-E) kh Zck.85.6. 4 Ma g a k a g k D τ f c + σ tanφ σ 3 3 /A τ f3 S S τ A σ /A σ /A
More informationuPC2933A, 2905A DS
Bipolar Analog Integrated Circuits μ PC933A, 95A μ PC933A95APNPIO = 1 A.7 V TYP. IC μ PCxxA3.3V 1. A VDIF =.7 V TYP.IO = 1 A Marking Side μ PC933AHF, μ PC95AHFTO- MP-5G μ PC933AHB, μ PC95AHBSC-6MP-3 μ
More informationD 24 D D D
5 Paper I.R. 2001 5 Paper HP Paper 5 3 5.1................................................... 3 5.2.................................................... 4 5.3.......................................... 6
More informationAD8515: 1.8 V 低電力 CMOS レール to レール入力/出力オペアンプ
REV. REVISION 15-6891 1-16-1 3 542 82 532-3 3-5-36 MT 2 6 635 6868 AD8515 1.8V CMOS to 1.8 5V 6mV SOT23 2.7V/µs 5MH to 2pA 1.8V 45µA PCMCIA PDA AD8515 1.8Vto SOT23-5L AD8515 5MHz 1.8V1mV to 2.7V/µs ASIC
More informationPart () () Γ Part ,
Contents a 6 6 6 6 6 6 6 7 7. 8.. 8.. 8.3. 8 Part. 9. 9.. 9.. 3. 3.. 3.. 3 4. 5 4.. 5 4.. 9 4.3. 3 Part. 6 5. () 6 5.. () 7 5.. 9 5.3. Γ 3 6. 3 6.. 3 6.. 3 6.3. 33 Part 3. 34 7. 34 7.. 34 7.. 34 8. 35
More information4‐E ) キュリー温度を利用した消磁:熱消磁
( ) () x C x = T T c T T c 4D ) ) Fe Ni Fe Fe Ni (Fe Fe Fe Fe Fe 462 Fe76 Ni36 4E ) ) (Fe) 463 4F ) ) ( ) Fe HeNe 17 Fe Fe Fe HeNe 464 Ni Ni Ni HeNe 465 466 (2) Al PtO 2 (liq) 467 4G ) Al 468 Al ( 468
More information(1)3 (2)4 (3) (1)25 8sec 1mm 25 8sec 1mm 27 64sec 1mm 29 64sec 1mm 31 (2)33 8sec 1mm 33 64
1 1.1 3 (1)3 (2)4 (3)4 1.2 5 1.2.1 5 1.2.2 10 1.3 11 1.4 21 1.5 24 1.6 25 (1)25 8sec 1mm 25 8sec 1mm 27 64sec 1mm 29 64sec 1mm 31 (2)33 8sec 1mm 33 64sec 1mm 34 35 (3)36 8sec 160 36 64sec 160 37 (4)38
More informationuPC2933A,2905A データシート
RDS9JJ4 Rev.4. μpc9a, 95APNPIO = A.7 V TYP. IC μpc4xxa. V. A VDIF =.7 V TYP.IO = A Marking Side μpc9ahf, μpc95ahfto- MP-45G μpc9ahb, μpc95ahbsc-64mp- 4 INPUT GND OUTPUT INPUT GND OUTPUT 4GND μpc9at, μpc95atsc-6mp-z
More informationSW1500_UMJ
2 1 2 3 4 5 6 9 10 SW1500 分 解 電 源 プラグ を 抜 く 100V 1 30 8 48 48 46 2 1 3 ABS MAX MAX MIN 5OFF AS 1 80mm65mm ON/OFF SW1500 AC100V 1.2m 5060Hz 40W 43KHz PZ2 SUS303t0.8mm 570cc 230cc 113mm217mm120mm 56mm182mm86mm
More informationuPC1251, 358 DS
Bipolar Analog Integrated Circuit µ PC5,58 µ PC5, 58 GND C 5 µ ATYP. GND µ PC5 µ PC58 DC µ PC45, 4 mvtyp. 5 natyp. TYP. DIP, SOP 9 SIP µ PC5C 8 DIP7.6 mm µ PC5C (5) DC µ PC5G 8 SOP5.7 mm5 µ PC5G (5) DC
More informationCRA3689A
AVIC-DRZ90 AVIC-DRZ80 2 3 4 5 66 7 88 9 10 10 10 11 12 13 14 15 1 1 0 OPEN ANGLE REMOTE WIDE SET UP AVIC-DRZ90 SOURCE OFF AV CONTROL MIC 2 16 17 1 2 0 0 1 AVIC-DRZ90 2 3 4 OPEN ANGLE REMOTE SOURCE OFF
More information概況
2 4 6 2 2 2 3 2 4 22 5 23 27 34 37 44 45 46 2 78.67 85.77 2.6. 7. 2 2, 65 85,464 93,8 65 85.5 93.2 8 56.2 77.9 2 8.87 88.8 3 () 65 3 6 2 2 2 2 2 22 3 2 2 2 2 2 2 2 2 28.58 28.74 29.9 8.8 8.84 2.63 65 28.3
More information1516-機器センサ_J.indb
機器用センサ Grid-EYE Grid-EYE Grid-EYE Grid-EYE Grid-EYE 着座検知 扉開閉 洗濯機の水位検知 電子レンジ PS-A 微圧タイプ 水位検知 Grid-EYE 温度計測 位置検知 熱 軸GF 赤外線アレイセンサ Grid-EYE 設計 仕様について予告なく変更する場合があります ご購入及びご使用前に当社の技術仕様書などをお求め願い それらに基づいて購入及び使用していただきますようお願いします
More informationM54640P データシート
お客様各位 カタログ等資料中の旧社名の扱いについて 200 年 4 月 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
More information9 1. (Ti:Al 2 O 3 ) (DCM) (Cr:Al 2 O 3 ) (Cr:BeAl 2 O 4 ) Ĥ0 ψ n (r) ω n Schrödinger Ĥ 0 ψ n (r) = ω n ψ n (r), (1) ω i ψ (r, t) = [Ĥ0 + Ĥint (
9 1. (Ti:Al 2 O 3 ) (DCM) (Cr:Al 2 O 3 ) (Cr:BeAl 2 O 4 ) 2. 2.1 Ĥ ψ n (r) ω n Schrödinger Ĥ ψ n (r) = ω n ψ n (r), (1) ω i ψ (r, t) = [Ĥ + Ĥint (t)] ψ (r, t), (2) Ĥ int (t) = eˆxe cos ωt ˆdE cos ωt, (3)
More information<4D F736F F D20362E325F96D491968CCE82CC97AC93AE90858EBF93C190AB E646F63>
m 5m m 5m.6m/s 4 (m) 8 6 4 6 8 (m) (m) 5 5 995/ 7 () 995/5 7 5 () 995/8 7 8 () 995/ 7 () () (mg/l) () () (g/m 3 ) 4 998 () 998 4 4 () 998 8 8 () 997 () (m) 6 8 4 6 COD(mg/l) (mg/l) (mg/l) 5 3... N : a
More informationTOP URL 1
TOP URL http://amonphys.web.fc.com/ 3.............................. 3.............................. 4.3 4................... 5.4........................ 6.5........................ 8.6...........................7
More information5989_7572JAJP(POD).pdf
Agilent Data Sheet 2 3 UNZ SCPI 5ms 1.15 ms 750 s 5ms 900 s 600 s 4 2 1EA 3 520 100 250 khz 11 14 > 250 khz 3.2 GHz 11 15 > 3.2 20 GHz 11 18 532 540 100 250 khz 11 14 250 khz 3.2 GHz 7 14 > 3.2 17 GHz
More information(1.2) T D = 0 T = D = 30 kn 1.2 (1.4) 2F W = 0 F = W/2 = 300 kn/2 = 150 kn 1.3 (1.9) R = W 1 + W 2 = = 1100 N. (1.9) W 2 b W 1 a = 0
1 1 1.1 1.) T D = T = D = kn 1. 1.4) F W = F = W/ = kn/ = 15 kn 1. 1.9) R = W 1 + W = 6 + 5 = 11 N. 1.9) W b W 1 a = a = W /W 1 )b = 5/6) = 5 cm 1.4 AB AC P 1, P x, y x, y y x 1.4.) P sin 6 + P 1 sin 45
More informationMB (FRONT VIEW) (TOP VIEW) VSA VSB / RESIN VSC VSA OUTC VSB /RESIN GND GND OUTC (DIP-P-M0) (FPT-P-M0) VSC (SIP-P-M0) VSA VSB / RESIN 00 kω 0 kω + + Co
DATA SHEET DS0 00 ASSP BIPOLAR MB MB IC V (VSA =. V ±. ) (VSB =. V ±. ) (+ V ) ( = 0. V ) ( ) (ICC = 0. ma = V) DIP, SIP, SOIP, (DIP-P-M0) (SIP-P-M0) (FPT-P-M0) MB (FRONT VIEW) (TOP VIEW) VSA VSB / RESIN
More informationuntitled
C L C L 4.5m 3.0m 10% 25% 50% 90% 75% 50% N N N 90% 90% 10% 10% 100 100 10 10 10% 10% :49kN :17 :17kN CBR CBR CBR 5 3,000 / 3,000 /mm /mm 1.2mm 89dB 190dB 3,000 3,000 /mm 20% 20%
More informationUnidirectional Measurement Current-Shunt Monitor with Dual Comparators (Rev. B
www.tij.co.jp INA206 INA207 INA208 INA206-INA208 INA206-INA208 V S 1 14 V IN+ V S 1 10 V IN+ OUT CMP1 IN /0.6V REF 2 3 1.2V REF 13 12 V IN 1.2V REF OUT OUT CMP1 IN+ 2 3 9 8 V IN CMP1 OUT CMP1 IN+ 4 11
More information07.報文_及川ら-二校目.indd
8 01 01 4 4 1 5 16 18 6 006 H 18 4 011 H 6 4 1 5 1 5 007 H 19 5 009 1 5 006 007 009 011 9 10 4 000 H 1 4 5 004 H 16 4 004 009 H 1 5 4 4 5 1 4 006 011 1 1 4m 5m 10m 007 1 7 009 009 1 5 10 1 000kg 10a 006
More informationpc725v0nszxf_j
PC725NSZXF PC725NSZXF PC725NSZXF PC725 DE file PC725 Date Jun. 3. 25 SHARP Corporation PC725NSZXF 2 6 5 2 3 4 Anode Cathode NC Emitter 3 4 5 Collector 6 Base PC725NSZXF PC725YSZXF.6 ±.2.2 ±.3 SHARP "S"
More information講義ノート 物性研究 電子版 Vol.3 No.1, (2013 年 T c µ T c Kammerlingh Onnes 77K ρ 5.8µΩcm 4.2K ρ 10 4 µωcm σ 77K ρ 4.2K σ σ = ne 2 τ/m τ 77K
2 2 T c µ T c 1 1.1 1911 Kammerlingh Onnes 77K ρ 5.8µΩcm 4.2K ρ 1 4 µωcm σ 77K ρ 4.2K σ σ = ne 2 τ/m τ 77K τ 4.2K σ 58 213 email:takada@issp.u-tokyo.ac.jp 1933 Meissner Ochsenfeld λ = 1 5 cm B = χ B =
More informationAN7191NZ
W -ch BTL IC AN79NK (W -ch) IC BTL W -ch (4Ω),G V = 34dB ( ASO etc) V 6V ( / ) - / ms NF,BS Ω φ3.6±. 8.±.3 3.±.3 4.±..±..±.3 HZIP-P-74A Unit : mm. +. R..7. (.6) (.) (.9). +.. (.4) 9.±.3 9.3±.3.±. 3.±.3
More informationdynamics-solution2.dvi
1 1. (1) a + b = i +3i + k () a b =5i 5j +3k (3) a b =1 (4) a b = 7i j +1k. a = 14 l =/ 14, m=1/ 14, n=3/ 14 3. 4. 5. df (t) d [a(t)e(t)] =ti +9t j +4k, = d a(t) d[a(t)e(t)] e(t)+ da(t) d f (t) =i +18tj
More informationS1C60N05データシート
PF19-2 Micro MN 4-bit Single Chip Microcomputer µ µ 1 SC2 SC1 RESET RM 1,56 words x 12 bits SC System Reset Control Core CPU S1C6B RAM 8 words x 4 bits nterrupt Generator CM~ SEG~19 LCD Driver nput Port
More information1 1 1 1-1 1 1-9 1-3 1-1 13-17 -3 6-4 6 3 3-1 35 3-37 3-3 38 4 4-1 39 4- Fe C TEM 41 4-3 C TEM 44 4-4 Fe TEM 46 4-5 5 4-6 5 5 51 6 5 1 1-1 1991 1,1 multiwall nanotube 1993 singlewall nanotube ( 1,) sp 7.4eV
More information研修コーナー
l l l l l l l l l l l α α β l µ l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l
More informationEPSON LP-8900ユーザーズガイド
3 4 5 6 7 8 abc ade w p s 9 10 s s 11 p 12 p 13 14 p s 15 p s A B 16 w 17 C p 18 D E F 19 p w G H 20 A B 21 C s p D 22 E s p w 23 w w s 24 p w s 25 w 26 p p 27 w p s 28 w p 29 w p s 30 p s 31 A s B 32
More information小川/小川
p TRE p Mp p p M p S p p Tp M p p p p p p p p M T T T p p MT MR MR M M p p M M p p M T T T T T T T T S T M p M p T p M E M M p p p p TT T T p p p T T p T T T T T T T p p pt T T T p S T S S T p T T T T
More informationhvigbt_ipm_daidevice_1610
作成 FG 4000 G X 90 D A µ µ µµ µµ 2 TYPE CM 1200 H A - 66 H NO. E964AA1-008 MITSUBISHI ELECTRIC CORPORATION JAPAN 3 4 5 6 7 µµ µ 8 9 p w w 10 t t p w w 11 t t 12 p w w 13 14 trr t Irr IE 0.5Irr 0 0 15 =
More informations102t02_j
S0T0 S0T0 ITrmsA SIP 4pin IRED SSR iso rms3.0k I T rms.0a SIP DRM 600 DRM 400 iso rms3.0k UL508file No. E94758S0T0/ S0T0 CSA. No.4file No. LR63705 S0T0/S0T0 UL94-0 Sheet No.: D4-A050FJP-A Date Apr. 8.
More informationNJW4108 IC ( ) NJW4108 1cell/2cell IC NJW4108V / Bi-CMOS NJW4108V : SSOP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 CNT 3 18 CS2 GND 4 17 VS NC 5 16 VREF F-CHG 6
IC ( ) 1cell/2cell IC V / Bi-CMOS V : SSOP20 P-CHG 1 20 Q-CHG NFB 2 19 CS1 CNT 3 18 CS2 GND 4 17 VS NC 5 16 VREF F-CHG 6 15 V + 7 14 TDET 8 13 TH C1 9 12 TL C2 10 11 V - 1 - (Ta=25 C) V + +15 V C1 V C1
More information) a + b = i + 6 b c = 6i j ) a = 0 b = c = 0 ) â = i + j 0 ˆb = 4) a b = b c = j + ) cos α = cos β = 6) a ˆb = b ĉ = 0 7) a b = 6i j b c = i + 6j + 8)
4 4 ) a + b = i + 6 b c = 6i j ) a = 0 b = c = 0 ) â = i + j 0 ˆb = 4) a b = b c = j + ) cos α = cos β = 6) a ˆb = b ĉ = 0 7) a b = 6i j b c = i + 6j + 8) a b a b = 6i j 4 b c b c 9) a b = 4 a b) c = 7
More informationJA.qxd
Application Note 1432 J rmsj RJ pp J pp t, P σ J rms RJ t (t) 1 ϕ (t) S (t) = P(2π f d t + ϕ (t)) S P f d ϕ (t) J ϕ 1 1 J [s] = ϕ [rad] J [UI] = ϕ [rad] 2π f d 2π Φ(t) 2π f d t ϕ (t) 1 d 1 d ƒ (t) = Φ(t)
More information1800 190437 190942 19143 19327 200416 100 1 100 2 .4.4.12.15 D H L S T.D C mm mm mm mm mm cc 3 55915-6/AC260 1,050,000[ 1,000,000] 855mm545mm 100mm290mm6 52921/AC261 525,000 [ 500,000] H260mm 52921/AC262
More information= hυ = h c λ υ λ (ev) = 1240 λ W=NE = Nhc λ W= N 2 10-16 λ / / Φe = dqe dt J/s Φ = km Φe(λ)v(λ)dλ THBV3_0101JA Qe = Φedt (W s) Q = Φdt lm s Ee = dφe ds E = dφ ds Φ Φ THBV3_0102JA Me = dφe ds M = dφ ds
More information0 1
9 - -R -V -K - -V - -V 3 0 3 3 3 001 0 001 00 0 00 1 0 11 1 0 11 10 00 0 10 00 0 0 1 3 F X1CE G XCE CV Cm H X111CE C1V Cm C1.W J X1CE CV CV Cm E X1CE C1V Cm K X11CE C1V m V L X11BCE CV m 1.W C90V M XCE
More information