1M EEPROM (128-kword 8-bit) Ready/Busy and function R10DS0209JJ0100 Rev.1.00 131072 8 EEPROM ROM MONOS CMOS 128 2.7V 5.5V 150ns (max) @ Vcc=4.5V 5.5V 250ns(max) @ Vcc=2.7V 5.5V 20mW/MHz (typ) 110µW (max) 10 ms (max) 128 10 ms (max) Data RDY/Busy ON/OFF JEDEC Byte-wide Standard CMOS MONOS 10 4 10 R10DS0209JJ0100 Rev.1.00 Page 1 of 20
Orderable Part Name Access time Package Shipping Container Quality R1EV5801MBSDRDI#B0 150ns/250ns 525mil 32-pin plastic SOP PRSP0032DC-A (FP-32DV) Tube Max. 22 pcs/tube Max. 880 pcs/inner box R1EV5801MBTDRDI#B0 150ns/250ns 32-pin plastic TSOP PTSA0032KD-A (TFP-32DAV) Tray Max. 60 pcs/reel Max. 600 pcs/inner box R1EV5801MBSDR Series RDY/Busy A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 V SS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 V CC A15 A13 A8 A9 A11 A10 I/O7 I/O6 I/O5 I/O4 I/O3 A3 A2 A1 A0 I/O0 I/O1 I/O2 V SS I/O3 I/O4 I/O5 I/O6 I/O7 A10 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 R1EV5801MBTDR Series (Top view) 16 15 14 13 12 11 10 98 7 6 5 4 3 2 1 A4 A5 A6 A7 A12 A14 A16 RDY/Busy V CC A15 A13 A8 A9 A11 (Top view) A0 A16 I/O0 I/O7 V CC V SS RDY/Busy R10DS0209JJ0100 Rev.1.00 Page 2 of 20
V V CC SS High voltage generator Voltage detector I/O0 to I/O7 RDY/Busy A0 to A6 Control logic and timing Y decoder I/O buffer and input latch Y gating buffer and A7 to A16 latch X decoder Memory array Data latch RDY/Busy I/O Read V IL V IL V IH V H * 1 High-Z Dout Standby V IH * 2 High-Z High-Z Write V IL V IH V IL V H High-Z to V OL Din Deselect V IL V IH V IH V H High-Z High-Z Write inhibit V IH Write inhibit V IL Data polling V IL V IL V IH V H V OL Dout (I/O7) Program reset V IL High-Z High-Z 1. DC 2. R10DS0209JJ0100 Rev.1.00 Page 3 of 20
V SS V CC 0.6 +7.0 V V SS Vin 0.5* 1 +7.0 V * 2 Topr 40 +85 C Tstg 55 +125 C 1. 50ns 3.0V 2. DC Min Typ Max V CC 2.7 3.0 5.5 V V SS 0 0 0 V V IL 0.3* 1 0.8 V V IH 1.9* 2 V CC + 0.3 V V H V CC 0.5 V CC + 1.0 V Topr 40 +85 C 1. 50ns 1.0V 2. V CC = 3.6 5.5V 2.2V DC (Ta = 40 +85 C, V CC = 2.7V 5.5V) Min Typ Max I LI 2* 1 µa V CC = 5.5V, Vin = 5.5V I LO 2 µa V CC = 5.5V, Vout = 5.5V/0.4V I CC1 20 µa = V CC I CC2 1 ma = V IH I CC3 15 ma Iout = 0mA,duty = 100%, cycle =1µs, V CC = 5.5V 6 ma Iout = 0mA,duty = 100%, cycle =1µs, V CC = 3.3V 50 ma Iout = 0mA,duty = 100%, cycle = 150ns, V CC = 5.5V 15 ma Iout = 0mA,duty = 100%, cycle = 250ns, V CC = 3.3V V OL 0.4 V I OL = 2.1mA V OH V CC 0.8 V I OH = 400µA 1. 100µA (max) (Ta = +25 C, f = 1MHz) Min Typ Max * 1 Cin 6 pf Vin = 0V * 1 Cout 12 pf Vout = 0V 1. R10DS0209JJ0100 Rev.1.00 Page 4 of 20
AC (Ta = 40 +85 C, V CC = 4.5V 5.5V) 0.4 2.4V, 0V V CC () 20ns 1TTL Gate + 100pF 0.8V, 2.0V Min Max t ACC 150 ns = = V IL, = V IH t 150 ns = V IL, = V IH t 10 75 ns = V IL, = V IH t OH 0 ns = = V IL, = V IH t DF * 1 0 50 ns = V IL, = V IH t DFR * 1 0 350 ns = = V IL, = V IH t RR 0 450 ns = = V IL, = V IH Min* 2 Typ Max t AS 0 ns t AH 150 ns t CS 0 ns t CH 0 ns t WS 0 ns t WH 0 ns t S 0 ns t H 0 ns t DS 100 ns t DH 10 ns t WP 250 ns t CW 250 ns t DL 300 ns t BLC 0.55 30 µs t BL 100 µs t WC 10* 3 ms RDY/Busy t DB 120 ns t DW 150* 4 ns t RP 100 µs * 5 t 1.0 µs 1. t DF, t DFR 2. Min 3. RDY/Busy t WC 10ms 10ms 4. RDY/Busy t DW 5. 6. A7 A16 7. A7 A16 8. R10DS0209JJ0100 Rev.1.00 Page 5 of 20
AC (Ta = 40 +85 C, V CC = 2.7V 5.5V) 0.4 2.4V, 0V V CC () 20ns 1TTL Gate + 100pF 0.8V, 2.0V Min Max t ACC 250 ns = = V IL, = V IH t 250 ns = V IL, = V IH t 10 120 ns = V IL, = V IH t OH 0 ns = = V IL, = V IH t DF * 1 0 50 ns = V IL, = V IH t DFR * 1 0 350 ns = = V IL, = V IH t RR 0 600 ns = = V IL, = V IH Min* 2 Typ Max t AS 0 ns t AH 150 ns t CS 0 ns t CH 0 ns t WS 0 ns t WH 0 ns t S 0 ns t H 0 ns t DS 100 ns t DH 10 ns t WP 250 ns t CW 250 ns t DL 750 ns t BLC 1.0 30 µs t BL 100 µs t WC 10* 3 ms RDY/Busy t DB 120 ns t DW 250* 4 ns t RP 100 µs * 5 t 1.0 µs 1. t DF, t DFR 2. Min 3. RDY/Busy t WC 10ms 10ms 4. RDY/Busy t DW 5. 6. A7 A16 7. A7 A16 8. R10DS0209JJ0100 Rev.1.00 Page 6 of 20
t ACC t OH t t t DF High Data Out t RR Data out valid t DFR R10DS0209JJ0100 Rev.1.00 Page 7 of 20
-1 t WC t CS t AH t CH t AS t WP t BL t S t H t DS t DH Din t DW RDY/Busy High-Z t DB High-Z t RP t V CC R10DS0209JJ0100 Rev.1.00 Page 8 of 20
-2 t WS tah t BL t WC t CW t AS t WH t S t H t DS t DH Din t DW RDY/Busy High-Z t DB High-Z t RP t V CC R10DS0209JJ0100 Rev.1.00 Page 9 of 20
-1 *6 A0 to A16 t t AS AH t BL t WP tdl tblc t CS t CH t WC t S t H t DS t DH Din RDY/Busy High-Z t DB t DW High-Z t RP t V CC R10DS0209JJ0100 Rev.1.00 Page 10 of 20
-2 *7 A0 to A16 t t AS AH t BL t CW tdl tblc t WS t WH t WC t H t S t DS t DH Din t DW RDY/Busy High-Z t DB High-Z t RP t V CC R10DS0209JJ0100 Rev.1.00 Page 11 of 20
(Data polling) An An t H t *8 t S t *8 t DW I/O7 Din X Dout X t WC Dout X R10DS0209JJ0100 Rev.1.00 Page 12 of 20
EEPROM I/O6 "1" "0" I/O6 2 t DW 1. I/O6 High 2. I/O6 3. 4. *4 Next mode *3 t t H *3 t t S *1 *2 *2 I/O6 Din Dout Dout Dout Dout t WC t DW R10DS0209JJ0100 Rev.1.00 Page 13 of 20
-1 VCC t BLC twc Data AA AAAA or 2AAA 55 A0 Write address Write data -2 VCC t WC Normal active mode Data AA AAAA or 2AAA 55 80 AA AAAA or 2AAA 55 20 R10DS0209JJ0100 Rev.1.00 Page 14 of 20
1 128 128 (A0-A6) 1 2 30µs 30µs 1 30µs 100µs High Data polling EEPROM I/O7 EEPROM EEPROM RDY/Busy RDY/Busy EEPROM Low High-Z RDY/Busy EEPROM =Low V CC =Low High V CC Read inhibit Read inhibit Program inhibit Program inhibit, I/O 10 4 1% 10 R10DS0209JJ0100 Rev.1.00 Page 15 of 20
1. (,, ) 20ns 20ns VIH 0 V VIH 0 V 20 ns max R10DS0209JJ0100 Rev.1.00 Page 16 of 20
2. V CC V CC CPU EEPROM V CC EEPROM CPU EEPROM V CC CPU ET * Unprogrammable * Unprogrammable 2.1 CPU EEPROM Low Low 10ms Low V CC Program inhibit Program inhibit or 1 µs min 100 µs min 10 ms min R10DS0209JJ0100 Rev.1.00 Page 17 of 20
3. 3 3 3 Data AAAA or 2AAA Write address AA 55 A0 Write data } Normal data input 6 AAAA or 2AAA AAAA or 2AAA Data AA 55 80 AA 55 20 / R10DS0209JJ0100 Rev.1.00 Page 18 of 20
Orderable part Number Guide of Parallel EEPROM R1EV58 01MB SD R D I #B0 Parallel EEPROM Memory density 064B : 64Kbit 256B : 256Kbit 01MB : 1Mbit Packaging, Environmental #S0 : Embossed tape (Pb free) #B0 : Tray or Tube (Pb free) Quality grade I : 40 to +85 deg C (Industry) Package type DA : DiLP-28pin SC : SOP-28pin SD : SOP-32pin TC : TSOP-28pin TD : TSOP-32pin Access time B : 85/100/120ns D : 150ns/250ns Function R : N : Reset function suported Reset function not suported R10DS0209JJ0100 Rev.1.00 Page 19 of 20
R1EV5801MBSD (PRSP0032DC-A / Previous Code: FP-32DV) JEITA Package Code P-SOP32-11.3x20.45-1.27 RENESAS Code PRSP0032DC-A Previous Code FP-32D/FP-32DV MASS[Typ.] 1.3g 32 *1 D 17 F NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DS NOT INCLUDE TRIM OFFSET. b p b 1 *2 c 1 c E H E S Z 1 Index mark e y S *3 b p 16 x M A Terminal cross section A 1 Detail F L 1 L θ Dimension in Millimeters Min Nom Max D 20.45 20.95 E 11.30 A 2 A 1 0.05 0.15 0.27 A 3.00 b p 0.32 0.40 0.48 b 1 0.38 c 0.17 0.22 0.27 c 1 0.20 θ 0 8 H E 13.84 14.14 14.44 e 1.27 x 0.15 y 0.10 Z 1.00 L 0.60 0.80 1.00 L 1 1.42 Reference Symbol R1EV5801MBTD (PTSA0032KD-A / Previous Code: TFP-32DAV) NOTE) 1. DIMENSION"*1"AND"*2(Nom)" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DS NOT INCLUDE TRIM OFFSET. b p b 1 c 1 c H D *1 D b p M A *2 E e y x JEITA Package Code P-TSOP(1)32-8x12.4-0.50 RENESAS Code PTSA0032KD-A Previous Code TFP-32DA/TFP-32DAV MASS[Typ.] 0.26g Index mark 1 S 32 *3 16 17 Z F S Terminal cross section Dimension in Millimeters Reference Min Nom Max Symbol D 12.40 E 8.00 8.20 A 1 Detail F L 1 L θ A 2 A 1 A b p b 1 c c 1 θ H D e x y Z L L 1 0.08 0.14 0.12 0.13 0.22 0.20 0.17 0.125 0.18 1.20 0.30 0.22 0 5 13.80 14.00 14.20 0.50 0.08 0.10 0.45 0.40 0.50 0.60 0.80 R10DS0209JJ0100 Rev.1.00 Page 20 of 20
Rev. 0.01 2013.10.17 0.02 2013.10.18 19 Access time A C 1.00 C - 1
1. 2. 3. 4. 5. OA AV 6. 7. 8. RoHS 9. 10. 11. 1. 2. 100-0004 2-6-2 http://www.renesas.com http://japan.renesas.com/contact/ 2014 Renesas Electronics Corporation. All rights reserved. Colophon 3.0