21953a_Japanese.book

12 DAC V REF SPI 12 ±0.2 LSB DNL (typ.) ±2 LSB INL (typ.) 20 MHz SPI LDAC 4.5 µs 2.048V V REF 50 ppm/ C 2.7V 5.5V : -40 C +125 C CS SDI SCK LDAC MCP482X 2.7V5.5V DNL 12 (DAC) (SPI ) MCP482X DAC MCP482X PDIP, SOIC MSOP MCP482X DNL MCP482X LDAC (POR) 8 PDIP, SOIC, MSOP CS SCK SDI 1 2 3 4 MCP4821 8 7 6 5 A AVSS SHDN LDAC A DAC A B DAC B 2.048V V REF AV SS 8 PDIP, SOIC, MSOP 1 CS 2 SCK 3 SDI 4 MCP4822 8 A 7 AVSS 6 B 5 LDAC DAC A DAC B A SHDN B 2006 Microchip Technology Inc. DS21953A_JP-page 1

1.0... 6.5V... AV SS 0.3V + 0.3V...±2 ma...±50 ma...±25 ma... -65 C +150 C... -55 C +125 C ESD... 4kV (HBM), 400V (MM) (T J )...+150 C : 5V AC/DC :, = 5V, AV SS = 0V, V REF = 2.048V, (G) = 2x, R L = 5 kω GND, C L = 100 pf, T A = -40 +85 C. +25 C Min Typ Max 2.7 5.5 - MCP4821 Input Current - MCP4822 I DD 330 415 400 750 µa, = 0x000 I SHDN 0.3 2 µa I SHDN_SW 3.3 6 µa V POR 2.0 V DC n 12 INL INL -12 ±2 12 LSB DNL ( 1) DNL -0.75 ±0.2 +0.75 LSB V OS -1 ±0.02 1 % of FSR = 0x000h V OS / C 0.16 ppm/ C -45 C 25 C -0.44 ppm/ C +25 C 85 C g E -2-0.10 2 % of FSR 0xFFFh, ΔG/ C -3 ppm/ C (V REF ) V REF 2.008 2.048 2.088 V G = 1x = 0xFFFh A ΔV REF / C 125 325 ppm/ C -40 C 0 C ( 1) 0.25 0.65 LSB/ C -40 C 0 C 45 160 ppm/ C 0 C +85 C 0.09 0.32 LSB/ C 0 C +85 C (V REF ) E NREF (0.1-10 Hz) 290 µv p-p = 0xFFFh, G = 1 e NREF 1.2 µv/ Hz = 0xFFFh, G = 1 (1 khz) e NREF (10 khz) 1.0 µv/ Hz = 0xFFFh, G = 1 1/f f CORNER 400 Hz 2: DS21953A_JP-page 2 2006 Microchip Technology Inc.

5V AC/DC (CONTINUED) :, = 5V, AV SS = 0V, V REF = 2.048V, (G) = 2x, R L = 5 kω GND, C L = 100 pf, T A = -40 +85 C. +25 C Min Typ Max 0.010 to 0.040 = 10 mv ( 40 mv) 1 LSB PM 66 SR 0.55 V/µs I SC 15 24 ma t SETTLING 4.5 µs 1/4 3/4 1/2 LSB DAC <10 nv-s 45 nv-s 1 LSB (0111...1111 1000...0000) <10 nv-s <10 nv-s 2: 3V AC/DC :, = 3V, AV SS = 0V, V REF = 2.048V, (G) = 1x, R L = 5 kω GND, C L = 100 pf, T A = -40 +85 C. 25 C Min Typ Max 2.7 5.5 - MCP4821 Input Current - MCP4822 I DD 300 415 400 750 µa,, = 0x000 I SHDN 0.25 2 µa I SHDN_SW 2 6 µa V POR 2.0 V DC n 12 Bits INL INL -12 ±3 12 LSB DNL ( 1) DNL -0.75 ±0.3 0.75 LSB V OS -1 ±0.02 1 % of FSR 0x000h V OS / C 0.5 ppm/ C -45 C +25 C -0.77 ppm/ C +25 C +85 C g E -2-0.15 2 % of FSR 0xFFFh, ΔG/ C -3 ppm/ C 2:. 2006 Microchip Technology Inc. DS21953A_JP-page 3

3V AC/DC (CONTINUED) :, = 3V, AV SS = 0V, V REF = 2.048V, (G) = 1x, R L = 5 kω GND, C L = 100 pf, T A = -40 +85 C. 25 C Min Typ Max (V REF ) V REF 2.008 2.048 2.088 V G = 1x = 0xFFFh A ΔV REF / C 125 325 ppm/ C -40 C 0 C ( 1) 0.25 0.65 LSB/ C -40 C 0 C 45 160 ppm/ C 0 C +85 C 0.09 0.32 LSB/ C 0 C +85 C (V REF ) E NREF (0.1-10 Hz) 290 µv p-p = 0xFFFh, G = 1 e NREF 1.2 µv/ Hz = 0xFFFh, G = 1 (1 khz) e NREF (10 khz) 1.0 µv/ Hz = 0xFFFh, G = 1 1/f f CORNER 400 Hz 0.010 to 0.040 =10 mv ( 40 mv) 1LSB PM 66 SR 0.55 V/µs I SC 14 24 ma t SETTLING 4.5 µs 1/4 3/4 1/2 LSB DAC <10 nv-s 45 nv-s 1 LSB (0111...1111 1000...0000) <10 nv-s <10 nv-s 2:. 5V :, = 5V, AV SS = 0V, V REF = 2.048V, (G) = 2x, R L = 5 kω GND, C L = 100 pf +125 C Min Typ Max 2.7 5.5 - MCP4821 Input Current - MCP4822 I DD 350 440 I SHDN 1.5 µa I SHDN_SW 5 µa V POR 1.85 V DC n 12 Bits INL INL ±4 LSB 2:. µa,, = 0x000 DS21953A_JP-page 4 2006 Microchip Technology Inc.

5V (CONTINUED) :, = 5V, AV SS = 0V, V REF = 2.048V, (G) = 2x, R L = 5 kω GND, C L = 100 pf +125 C Min Typ Max DNL ( 1) DNL ±0.25 LSB V OS ±0.02 % of FSR Code 0x000h V OS / C -5 ppm/ C +25 C +125 C g E -0.10 % of FSR 0xFFFh, ΔG/ C -3 ppm/ C (V REF ) V REF 2.048 V G = 1x = 0xFFFh A ΔV REF / C 125 ppm/ C -40 C 0 C ( 1) 0.25 LSB/ C -40 C 0 C 45 ppm/ C 0 C +85 C 0.09 LSB/ C 0 C +85 C (V REF ) E NREF (0.1-10 Hz) 290 µv p-p = 0xFFFh, G = 1 e NREF 1.2 µv/ Hz = 0xFFFh, G = 1 (1 khz) e NREF (10 khz) 1.0 µv/ Hz = 0xFFFh, G = 1 1/f f CORNER 400 Hz 0.010 to 0.040 =10 mv ( 40 mv) 1LSB PM 66 SR 0.55 V/µs I SC 17 ma t SETTLING 4.5 µs 1/4 3/4 1/2 LSB DAC <10 nv-s 45 nv-s 1 LSB (0111...1111 1000...0000) <10 nv-s <10 nv-s 2:. 2006 Microchip Technology Inc. DS21953A_JP-page 5

AC (SPI ) :, = 2.7V 5.5V, T A = -40 +125 C. +25 C Min Typ Max ( ) ( ) V IH 0.7 V V IL 0.2 V V HYS 0.05 I LEAKAGE -1 1 μa SHDN = LDAC = CS = SDI = SCK = AV SS ( ) C IN, 10 pf = 5.0V, T A = +25 C, C OUT f CLK = 1 MHz ( ) F CLK 20 MHz T A = +25 C ( ) t HI 15 ns t LO 15 ns CLK CS t CSSR 40 ns CLK CS ( ) t SU 15 ns t HD 10 ns SCK CS t CHS 15 ns CS t CSH 15 ns LDAC t LD 100 ns LDAC t LS 40 ns CS SCK t IDLE 40 ns t CSH CS t IDLE t CSSR Mode 1,1 SCK Mode 0,0 t HI t LO t CHS SI t SU t HD MSB in LSB in LDAC t LS t LD DS21953A_JP-page 6 2006 Microchip Technology Inc.

:, =+2.7V +5.5V, AV SS = GND. Min Typ Max T A -40 +125 C T A -40 +125 C T A -65 +150 C, 8 PDIP θ JA 85 C/W, 8-Lead SOIC θ JA 163 C/W, 8-Lead MSOP θ JA 206 C/W 2006 Microchip Technology Inc. DS21953A_JP-page 7

典型的な特性グラフ 2.0 注: 以下の本項のグラフや表は 有限のサンプルの統計値に基づいており 情報提供のためだけのものです ここに記述された性能特性は未テストか非保証です いくつかのグラフや表では 仕様の動作範囲を超 えています 例えば供給電源範囲外 従って保証範囲外です 注 : 特に示されていない限り, TA = +25 C, VDD = 5V, AVSS = 0V, VREF = 2.048V, Gain = 2, RL = 5 kω, CL = 100 pf. 0.3 0.2 INL (LSB) DNL (LSB) 0.1 0-0.1-0.2-0.3 0 1024 2048 3072 5 4 3 2 1 0-1 -2-3 -4-5 4096 Ambient Temperature 125C 0 1024 Code (Decimal) 図 2-1: コードと DNL 図 2-4: Absolute INL (LSB) 0.1 DNL (LSB) 2048 3072 Code (Decimal) 25 4096 コードと周囲温度に対する INL 2.5 0.2 0-0.1 2 1.5 1 0.5 0-0.2 0 1024 2048 3072 Code (Decimal) 図 2-2: 125C -40 4096 85C 25C コードと周囲温度に対する DNL -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 図 2-5: 周囲温度に対する絶対 INL 2 0.0766 0.0764 0 0.0762 INL (LSB) Absolute DNL (LSB) 85 0.076 0.0758 0.0756-2 -4 0.0754 0.0752-6 0.075-40 -20 0 20 40 60 80 100 120 0 DS21953A_JP-page 8 2048 3072 4096 Code (Decimal) Ambient Temperature (ºC) 図 2-3: 周囲温度に対する絶対 DNL 1024 図 2-6: コード対 INL 2006 Microchip Technology Inc.

:, T A = +25 C, = 5V, AV SS = 0V, V REF = 2.048V, Gain = 2, R L = 5 kω, C L = 100 pf. Full Scale (V) 2.050 2.049 2.048 2.047 2.046 2.045 2.044 2.043 2.042 2.041 2.040-40 -20 0 20 40 60 80 100 120 Ambient Temperature ( C) : 4V VDD: 3V VDD: 2.7V Output Noise Voltage Density (µv/ Hz) 1.E-04 100 1.E-05 10 1.E-06 1 1.E-07 0.1 1E-1 0.1 1E+0 1 1E+1 10 1E+2 100 1E+3 1k 1E+4 10k 1E+5 100k Frequency (Hz) Full Scale (V) 4.100 4.096 4.092 4.088 : 5.5V : 5V 4.084 4.080 4.076-40 -20 0 20 40 60 80 100 120 Ambient Temperature ( C) Output Noise Voltage (mv) 1.E-02 10.0 1.E-03 1.00 1.E-04 0.10 E ni (in V P-P ) E ni (in V RMS ) Maximum Measurement Time = 10s 1.E-05 0.01 1E+2 100 1E+3 1k 1E+4 10k 1E+5 100k 1E+6 1M Bandwidth (Hz) 2006 Microchip Technology Inc. DS21953A_JP-page 9

:, T A = +25 C, = 5V, AV SS = 0V, V REF = 2.048V, Gain = 2, R L = 5 kω, C L = 100 pf. I DD (µa) 340 320 300 280 260 240 220 200 180-40 -20 0 20 40 60 80 100 120 Ambient Temperature ( C) 5.5V 5.0V 4.0V 3.0V 2.7V I DD (µa) 600 550 500 450 400 350 300-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 5.5V 5.0V 4.0V 3.0V 2.7V Occurrence 20 18 16 14 12 10 8 6 4 2 0 265 270 275 280 285 290 295 300 I DD (µa) 305 310 315 320 >320 Occurrence 25 20 15 10 5 0 380 385 390 395 400 405 410 415 I DD (µa) 420 425 430 435 440 Occurrence 18 16 14 12 10 8 6 4 2 0 Occurrence 22 20 18 16 14 12 10 8 6 4 2 0 285 290 295 300 305 310 315 320 325 330 335 340 345 350 I DD (µa) >350 385 390 395 400 405 410 415 420 I DD (µa) 425 430 435 DS21953A_JP-page 10 2006 Microchip Technology Inc.

, T A = +25 C, = 5V, AV SS = 0V, V REF = 2.048V, Gain = 2, R L = 5 kω, C L = 100 pf. I SHDN (µa) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 5.5V 5.0V 4.0V 3.0V 2.7V Gain Error (%) -0.05-0.1-0.15-0.2-0.25-0.3-0.35-0.4-0.45-0.5-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 5.5V 5.0V 4.0V 3.0V 2.7V 4 5.5V 4 I SHDN_SW (µa) 3.5 3 2.5 2 1.5 5.0V 4.0V 3.0V 2.7V V IN Hi Threshold (V) 3.5 3 2.5 2 1.5 5.5V 5.0V 4.0V 3.0V 2.7V 1-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 1-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) Offset Error (%) 0.11 0.09 0.07 0.05 5.5V 0.03 0.01-0.01 5.0V 4.0V 3.0V -0.03 2.7V -40-20 0 20 40 60 80 100 120 Ambient Temperature (ºC) V IN Low Threshold (V) 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 5.5V 5.0V 4.0V 3.0V 2.7V 2006 Microchip Technology Inc. DS21953A_JP-page 11

:, T A = +25 C, = 5V, AV SS = 0V, V REF = 2.048V, Gain = 2, R L = 5 kω, C L = 100 pf. V IN _ SPI Hysteresis (V) 2.5 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 5.5V 5.0V 4.0V 3.0V 2.7V I OUT_HI_SHORTED (ma) 16 15 14 13 12 11 10-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 5.5V 5.0V 4.0V 3.0V 2.7V _HI Limit ( -Y)(V) 0.035 0.033 0.031 0.029 0.027 0.025 0.023 0.021 0.019 0.017 0.015-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) 4.0V 3.0V 2.7V (V) 6.0 5.0 4.0 3.0 2.0 1.0 0.0 V REF = 4.096V Output Shorted to Output Shorted to V SS 0 2 4 6 8 10 12 14 16 I OUT (ma) _LOW Limit (Y-AV SS )(V) 0.0028 0.0026 0.0024 5.5V 0.0022 5.0V 0.0020 0.0018 4.0V 3.0V 0.0016 2.7V 0.0014 0.0012 0.0010-40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) DS21953A_JP-page 12 2006 Microchip Technology Inc.

:, T A = +25 C, = 5V, AV SS = 0V, V REF = 2.048V, Gain = 2, R L = 5 kω, C L = 100 pf. SCK LDAC LDAC Time (1 µs/div) Time (1 µs/div) SCK SCK LDAC LDAC Time (1 µs/div) Time (1 µs/div) SCK LDAC Ripple Rejection (db) Time (1 µs/div) Frequency (Hz) 2006 Microchip Technology Inc. DS21953A_JP-page 13

3.0 MCP4821 No. MCP4822 No. 1 1 (2.7V 5.5V) 2 2 CS 3 3 SCK 4 4 SDI 5 5 LDAC DAC 6 SHDN 6 B DAC B 7 7 AV SS 8 8 A DAC A 3.1 ( ) AV SS 2.7V 5.5V 3.2 (CS) CS 3.3 (SCK) SCK SPI 3.4 (SDI) SDI SPI SHDN DAC A B DAC DAC AV SS AV SS LDAC (DAC ) DAC CS DS21953A_JP-page 14 2006 Microchip Technology Inc.

4.0 MCP482X DAC SPI MCP482X 2.7V 5.5V 111 110 101 INL < 0 G(1x 2x) D N n (n = 12) 2.048V G D = ------------------------------------- N 2 n 100 011 010 001 000 INL < 0 1LSB LSB LSB MCP482X 1x 2.048V/4096 MCP482X 2x 4.096V/4096 4.0.1 INL INL 0x000 0xFFF INL INL 4.0.2 DNL DNL DNL 1LSB 111 110 101 100 011 DAC 010 001 000 > 1 LSB < 1 LSB DAC 4.0.3 4.0.4 V REF 1 LSB 2006 Microchip Technology Inc. DS21953A_JP-page 15

4.1 4.1.1 DAC CMOS 4.1.1.1 1 V/V (GA = 1) 2 V/V (GA = 0) G = 1 0.000V 4095/4096 2.048V G =2 0.000 4095/4096 4.096V 2.048V V REF 0.000V 4.096V CMOS AV SS 4.1.2 MCP482X 2.048V 4.1.3 (POR) DAC SHDN = 0 ( ) DACLDAC POR ( V POR = 2.0V) DAC > V POR 0.1 µf (µs) 5V 10 8 6 4 2 0 - V POR T A = +25 C 1 2 3 4 5 V POR (V) 4.1.4 V POR (SHDN) MCP4821 ( 500 kω) AV SS SHDN SD = 1 DAC (4.5 µs) 10 µs DS21953A_JP-page 16 2006 Microchip Technology Inc.

5.0 5.1 MCP482X SPI Mode 0,0 Mode 1,1 SDI SCK MCP482X CS DAC DAC A DAC B Mode 0,0 Mode 1,1 5.2 CS SDI SCK CS DAC MCP482X LDAC DAC A DAC B LDAC DAC DAC DAC X MCP482X CS CS : W-x W-x W-x W-0 W-x W-x W-x W-x A/B GA SHDN D11 D10 D9 D8 bit 15 bit 8 bit 15 A/B: DAC A DAC B 1 = DAC B 0 = DAC A bit 14 bit 13 GA: bit 12 bit 11-0 : W-x W-x W-x W-x W-x W-x W-x W-x D7 D6 D5 D4 D3 D2 D1 D0 bit 7 bit 0 1 = 1x ( = V REF * D/4096) 0 = 2x ( = 2 * V REF * D/4096) SHDN: 1 = 0 = D11:D0: DAC D 0 4095 R = W = U =, 0 -n = POR 1 = 0 = x = 2006 Microchip Technology Inc. DS21953A_JP-page 17

CS SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 (Mode 1,1) (Mode 0,0) 12 SDI A/B GA SHDN D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 LDAC DS21953A_JP-page 18 2006 Microchip Technology Inc.

6.0 MCP482X DAC MCP482X : ( ) 6.1 MCP482X DAC PICmicro MCU dspic DSC (MCU) SPI (CS SCK SDI) LDAC DAC LDAC CS 6.2 DAC 0.1 µf ( ) (4 mm ) A AV SS 6.3 ( µv/ Hz) X 1/f (f CORNER ) 400 Hz (mv RMS mv P-P ) X LPF 1 khz LPF E NREF 100 µv RMS MCP482X DNL(G = 1 ).001µF 4.7 µf 0.1 µf A 1µF B MCP482X AV SS A 1µF B SDI 6.4 MCP482X AV SS 0.1 µf 0.1 µf SDI CS 1 SDO SCK LDAC CS 0 PICmicro Microcontroller AV SS AC MCP482X (SNR) MCP482X 2006 Microchip Technology Inc. DS21953A_JP-page 19

6.5 MCP482X 2.7V 5.5V (R-R) DAC 6.5.1 MCP482XDAC 4096 G = 1 2.048 V REF 500 µv G = 2 2.048 V REF 1mV 6.5.1.1 AV SS 0.8V 200 µv 0.8V V REF 0.82V (MCP492X ) DAC V REF SNR V REF DAC MCP482X ±0.75 (max.) DNL R SENSE V CC + MCP482X R 1 V TRIP SPI 3 R 2 0.1 uf V CC = 2.048 G-------- D 2 12 R 2 V trip = -------------------- R 1 + R 2 G = (1x 2x) D = DAC (0 4096) DS21953A_JP-page 20 2006 Microchip Technology Inc.

6.5.1.2 DAC DAC LSB V REF 2V REF AV SS MCP482X ±0.75 (max.) DNL V CC+ R SENSE V CC+ MCP482X R 3 R 1 V TRIP SPI 3 R 2 0.1 µf V CC- V CC- = 2.048 G------- D 2 12 G = (1x 2x) D = DAC (0 4096) R R 2 R 3 23 = ------------------ R 2 + R 3 ( V V CC+ R 2 ) + ( V CC- R 3 ) 23 = ----------------------------------------------------- R 2 + R 3 R 1 R 23 V O V R 23 + V 23 R 1 trip = ------------------------------------------- R 2 + R 23 V 23 2006 Microchip Technology Inc. DS21953A_JP-page 21

6.6 MCP482X (OP ) DAC R 1 R 2 R 3 R 4 DAC R4 AV SS R 4 R 2 SPI 3 MCP482X = 2.048 G------- D V R 4 IN+ = ------------------- R 3 + R 4 R 2 2 12 V O = V IN+ 1 + ----- V R ----- 2 DD R 1 R 3 R 1 R 4 R 1 V IN + V CC + V CC 0.1 µf V O G = (1x 2x) D = DAC (0 4096) 4. R 3 R 4 DAC 4096 +2.05V 6.6.1 DAC ±2.05V 1mV 1. : +2.05V (-2.05V) = 4.1V. 2. : 4.1V/1 mv = 4100 2 12 = 4096 12 3. (R 2 /R 1 ) (4.096V) (R 1 +R 2 ) V REF V REF 4.096V(G=2)DAC -2.05V : R 4 ---------------------- = 2.05V ------------------------------------------------------ + ( 0.5 4.096V) = ( R 3 + R 4 ) 1.5 4.096V R 4 = 20 kω R 3 = 10 kω 2 -- 3 R -------- 2 R 1 = ---------------- 2.05 4.096V R 2 ----- R 1 = 1 -- 2 R 1 = 20 kω R 2 = 10 kω 0.5 DS21953A_JP-page 22 2006 Microchip Technology Inc.

6.7 DAC MCP482X DAC R 3 R 4 R 5 R 2 R 1 A MCP482X V DAC DD A ( ) V CC + V CC + V O R 5 MCP482X B R 3 SPI 3 DAC B ( ) R 4 0.1 µf V CC V CC B = ( 2.048V G B ) D B ------- 2 12 A = ( 2.048V G A ) D A ------- 2 12 V B R 4 + V CC- R 3 IN+ = ----------------------------------------------- R 3 + R 4 AV SS = GND G = (1x 2x) R 2 V O = V IN+ 1 + ----- V R ----- 2 OUTA R 1 R 1 D = DAC (0 4096) R 4 R 5 DAC V V CC+ R 4 + V CC- R 5 R 45 = ------------------------------------------- R 4 R R 4 + R 45 = ------------------ 5 5 R 4 + R 5 V B R 45 + V 45 R 3 IN+ = ---------------------------------------------- V R 3 + R O = V IN+ 1 + ----- 45 R V R ----- 2 OUTA 1 R 1 R 2 2006 Microchip Technology Inc. DS21953A_JP-page 23

6.8 DAC DAC DAC DAC 1mV 1µV 0V 4.1V 1. : 4.1V/1 µv = 4.1e06. 2 22 = 4.2e06 22 DNL = ±0.75 LSB MCP482X 2. DAC B B 1 mv 1µV A 1000 DAC B DNL 3. R 2 100Ω R 1 100 kω 4. V CC + MCP482X DAC A ( ) A R 1 >> R 2 R 1 V O SPI 3 MCP482X B DAC B ( ) R 2 0.1 µf V CC A D A D = 2.048V G A ------- B B = 2.048V G B ------- 2 12 2 12 G = (1x 2x) D = DAC (0 4096) V A R 2 + B R 1 O = ----------------------------------------------------- R 1 + R 2 DS21953A_JP-page 24 2006 Microchip Technology Inc.

6.9 DAC R SENSE DAC DAC MCP482X V CC + Load I L SPI 3 V CC I b = 2.048V G------- D 2 12 R sense I = ---- I L b β I L -------------- β = β ----------- + 1 R sense G = (1x 2x) D = DAC (0 4096) 2006 Microchip Technology Inc. DS21953A_JP-page 25

7.0 7.1 PICtail MCP482X www.microchip.com 7.2 MCP482X www.microchip.com DS21953A_JP-page 26 2006 Microchip Technology Inc.

8.0 8.1 8 MSOP : XXXXXX YWWNNN 4821E 524256 8-Lead PDIP (300 mil) : XXXXXXXX XXXXXNNN YYWW MCP4821 E/P e3 ^ 256 0524 8-Lead SOIC (150 mil) : XXXXXXXX XXXXYYWW NNN MCP4821E SN^^ e3 0524 256 : XX...X Y ( ) YY ( ) WW ( 01 ) NNN e3 (Sn) JEDEC * JEDEC ( e3) Note: 2006 Microchip Technology Inc. DS21953A_JP-page 27

8-Lead Plastic Micro Small Outline Package (MS) (MSOP) E E1 p B n 1 2 D α c φ A A1 A2 β (F) L Units INCHES MILLIMETERS* Dimension Limits MIN NOM MAX MIN NOM Number of Pins n 8 8 Pitch p.026 BSC 0.65 BSC Overall Height A - -.043 - - Molded Package Thickness A2.030.033.037 0.75 0.85 Standoff A1.000 -.006 0.00 - Overall Width E.193 TYP. 4.90 BSC Molded Package Width E1.118 BSC 3.00 BSC Overall Length D.118 BSC 3.00 BSC Foot Length L.016.024.031 0.40 0.60 Footprint (Reference) F.037 REF 0.95 REF Foot Angle φ 0-8 0 - Lead Thickness c.003.006.009 0.08 - Lead Width B.009.012.016 0.22 - Mold Draft Angle Top Mold Draft Angle Bottom α β 5 5 5 5 - - 15 15 5 5 - - *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.010" (0.254mm) per side. JEDEC Equivalent: MO-187 Drawing No. C04-111 MAX 1.10 0.95 0.15 0.80 8 0.23 0.40 15 15 DS21953A_JP-page 28 2006 Microchip Technology Inc.

8-Lead Plastic Dual In-line (P) 300 mil (PDIP) E1 2 D n 1 α E A A2 c A1 L β eb B1 B p * MIN NOM MAX MIN NOM MAX n 8 8 p.100 2.54 A.140.155.170 3.56 3.94 4.32 A2.115.130.145 2.92 3.30 3.68 A1.015 0.38 E.300.313.325 7.62 7.94 8.26 E1.240.250.260 6.10 6.35 6.60 D.360.373.385 9.14 9.46 9.78 L.125.130.135 3.18 3.30 3.43 c.008.012.015 0.20 0.29 0.38 B1.045.058.070 1.14 1.46 1.78 B.014.018.022 0.36 0.46 0.56 eb.310.370.430 7.87 9.40 10.92 α 5 10 15 5 10 15 β 5 10 15 5 10 15 * Notes: D E1.010 (0.254mm) JEDEC Equivalent: MS-001 Drawing No. C04-018 2006 Microchip Technology Inc. DS21953A_JP-page 29

8-Lead Plastic Small Outline (SN) Narrow, 150 mil (SOIC) E E1 p 2 D B n 1 45 h α c A A2 φ β L A1 * MIN NOM MAX MIN NOM MAX n 8 8 p.050 1.27 A.053.061.069 1.35 1.55 1.75 A2.052.056.061 1.32 1.42 1.55 A1.004.007.010 0.10 0.18 0.25 E.228.237.244 5.79 6.02 6.20 E1.146.154.157 3.71 3.91 3.99 D.189.193.197 4.80 4.90 5.00 h.010.015.020 0.25 0.38 0.51 L.019.025.030 0.48 0.62 0.76 φ 0 4 8 0 4 8 c.008.009.010 0.20 0.23 0.25 B.013.017.020 0.33 0.42 0.51 α 0 12 15 0 12 15 β 0 12 15 0 12 15 * Notes: D E1.010 (0.254mm). JEDEC Equivalent: MS-012 Drawing No. C04-057 DS21953A_JP-page 30 2006 Microchip Technology Inc.

MCP4821/4822 A ( ) 2006 Microchip Technology Inc. DS21953A_JP-page 31

MCP4821/4822 NOTES: DS21953A_JP-page 32 2006 Microchip Technology Inc.

MCP4821/4822. PART NO. X /XX : MCP4821: 12-Bit DAC with SPI Interface MCP4821T: 12-Bit DAC with SPI Interface (Tape and Reel) (SOIC, MSOP) MCP4822: 12-Bit DAC with SPI Interface MCP4822T: 12-Bit DAC with SPI Interface (Tape and Reel) (SOIC, MSOP) : E = -40 C to +125 C : MS = Plastic MSOP, 8-lead P = Plastic DIP (300 mil Body), 8-lead SN = Plastic SOIC, (150 mil Body), 8-lead : a) MCP4821T-E/SN:, 8LD SOIC package. b) MCP4821T-E/MS: 8LD MSOP package. c) MCP4821-E/SN:, 8LD SOIC package. d) MCP4821-E/MS:, 8LD MSOP package. e) MCP4821-E/P:, 8LD PDIP package. a) MCP4822T-E/SN:, 8LD SOIC package. b) MCP4822-E/P:, 8LD PDIP package. c) MCP4822-E/SN:, 8LD SOIC package. 2006 Microchip Technology Inc. DS21953A_JP-page 33

MCP4821/4822 NOTES: DS21953A_JP-page 34 2006 Microchip Technology Inc.

Microchip Technology Inc. Microchip Technology Inc. Accuron dspic KEELOQ microid MPLAB PIC PICmicro PICSTART PRO MATE PowerSmart rfpic SmartShunt AmpLab FilterLab Migratable Memory MXDEV MXLAB PICMASTER SEEVAL SmartSensor The Embedded Control Solutions Company Analog-for-the-Digital Age Application Maestro dspicdem dspicdem.net dspicworks ECAN ECONOMONITOR FanSense FlexROM fuzzylab In- Circuit Serial Programming ICSP ICEPIC Linear Active Thermistor MPASM MPLIB MPLINK MPSIM PICkit PICDEM PICDEM.net PICLAB PICtail PowerCal Powerlnfo PowerMate PowerTool rflab rfpicdem Select Mode Smart Serial SmartTel Total Endurance UNI/O WiperLock SQTP 2006 1OS/TS-16949 2003 10 PICmicro 8-bit MCUs KEELOQ EEPROMs 2000 ISO9001 2006 Microchip Technology Inc. DS21953A_JP-page 35

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