www.tij.co.jp TPS749xx µ µ SS = 0µ F V SS = 0.001µ F 1V/div SS = 0.0047µ F V IN IN PG V BIAS IN BIAS BIAS EN SS TPS74901 GND FB R 3 R 1 V 1V/div 0V 1.2V V EN SS R 2 Time (1ms/div) 1. 2.
(1) V (2) TPS749xxyyy z XX is nominal output voltage (for example, 12 = 1.2V, 15 = 1.5V, 01 = Adjustable). (3) YYY is package designator. Z is package quantity. (1) TPS749xx V IN,V BIAS Input voltage range 0.3 to +6 V V EN Enable voltage range 0.3 to +6 V V PG Power-good voltage range 0.3 to +6 V I PG PG sink current 0 to +1.5 ma V SS SS pin voltage range 0.3 to +6 V V FB Feedback pin voltage range 0.3 to +6 V V Output voltage range 0.3 to V IN + 0.3 V I Maximum output current Internally limited Output short-circuit duration Indefinite P DISS ontinuous total power dissipation See Dissipation Ratings Table T J Operating junction temperature range 40 to +125 T STG Storage junction temperature range 55 to +150 T A < +25 DERATING FATOR θ JA θ J POWER RATING ABOVE T A = +25 RGW (QFN) (1) 36.5 /W 4.05 /W 2.74W 27.4mW/ KTW (DDPAK) (2) 18.8 /W 2.32 /W 5.32W 53.2mW/ 2
µ µ TPS74901 MIN TYP MAX V IN Input voltage range V +V DO 5.5 V V BIAS Bias pin voltage range 2.7 5.5 V V REF Internal reference (Adj.) T J = +25 0.798 0.802 0.806 V Output voltage range V IN = 5V, I = 3.0V V REF 3.6 V Accuracy V + 2.2V V BIAS 5.5V, V (RGW package) (1) 50mA I 3.0A Accuracy V + 2.4V V BIAS 5.5V, (KTW package) (1) 50mA I 3.0A 2 ±0.5 2 % 2 ±0.5 2 V /V IN Line regulation V (NOM) + 0.3 V IN 5.5V 0.03 %/V V /I Load regulation 50mA I 3.0A 0.09 %/A V DO V IN dropout voltage (2) I = 3.0A, V BIAS V (NOM) 3.25V (3) 120 280 mv V BIAS dropout voltage (2) I = 3.0A, V IN =V BIAS 1.31 1.75 V % V = 80% V (NOM),RGW 3.9 4.6 5.5 Package I L urrent limit A V = 80% V (NOM), KTW 3.8 4.6 5.5 Package I BIAS Bias pin current 1 2 ma Shutdown supply current I SHDN V EN 0.4V 1 50 µa (I GND ) I FB Feedback pin current 1 0.150 1 1kHz, I = 1.5A, Power-supply rejection V IN = 1.8V, V = 1.5V (V IN to V ) 300kHz, I = 1.5A, PSRR V IN = 1.8V, V = 1.5V 1kHz, I = 1.5A, Power-supply rejection V IN = 1.8V, V = 1.5V (V BIAS to V ) 300kHz, I = 1.5A, V IN = 1.8V, V = 1.5V 100Hz to 100kHz, Noise Output noise voltage 25 V µv RMS I = 3.0A, SS = 0.001µF t STR Minimum startup time R LOAD for I = 1.0A, SS = open 200 µs I SS Soft-start charging current V SS = 0.4V 440 na V EN, HI Enable input high level 1.1 5.5 V V EN, LO Enable input low level 0 0.4 V V EN, HYS Enable pin hysteresis 50 mv V EN, DG Enable pin deglitch time 20 µs I EN Enable pin current VEN = 5V 0.1 1 µa V IT PG trip threshold V decreasing 85 90 94 %V V HYS PG trip hysteresis 3 %V V PG, LO PG output low voltage I PG = 1mA (sinking), V <V IT 0.3 V I PG, LKG PG leakage current V PG = 5.25V, V >V IT 0.1 1 µa Operating junction T J 40 +125 temperature Thermal shutdown Shutdown, temperature increasing +165 T SD temperature Reset, temperature decreasing +140 60 30 50 30 µa db db 3
IN urrent Limit V BIAS UVLO SS 0.44µ A Thermal Limit R 1 SS Soft-Start Discharge 0.8V Reference FB PG EN Hysteresis and Deglitch R 2 0.9 V REF GND R1 (kω) R2 (kω) V (V) Short Open 0.8 0.619 4.99 0.9 1.13 4.53 1.0 1.37 4.42 1.05 1.87 4.99 1.1 2.49 4.99 1.2 4.12 4.75 1.5 3.57 2.87 1.8 3.57 1.69 2.5 3.57 1.15 3.3 1. V = 0.8 (1 + R 1 /R 2 ) SS Open 470pF 1000pF 4700pF 0.01µF 0.015µF 2. SOFT-START TIME 0.1ms 0.5ms 1ms 5ms 10ms 16ms t SS (s) = 0.8 SS (F) /7.5 10 7 4
RGW PAKAGE QFN-20 (TOP VIEW) KTW PAKAGE DDPAK-7 (TOP VIEW) IN IN 6 20 IN 7 19 IN 8 18 PG BIAS 9 10 17 16 N FB EN 11 GND 12 N 13 N 14 SS 15 SS FB GND IN BIAS 5 4 3 2 1 N N N 1 2 3 4 5 6 7 EN NAME KTW (DDPAK) RGW (QFN) IN 5 5 8 EN 7 11 SS 1 15 µ BIAS PG 6 N/A 10 9 Ω Ω FB 2 16 N 3 N/A 1, 18 20 2 4, 13, 14, 17 µ GND 4 12 PAD/TAB 5
µ µ µ 0.20 V IN LINE REGULATION 0.5 V BIAS LINE REGULATION hange in V (%) 0.15 0.10 0.05 0 0.05 0.01 0.15 +25 40 +125 hange in V (%) 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 40 +125 +25 0.20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VIN V (V) VBIAS V (V) 3 4 1.0 LOAD REGULATION 0.5 LOAD REGULATION hange in V (%) 0.8 0.6 0.4 0.2 0 0.2 40 +25 +125 0 10 20 30 40 50 hange in V (%) 0.4 03 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 +25 40 +125 0 0.5 1.0 1.5 2.0 2.5 3.0 I (ma) I (A) 5 6 180 160 V IN DROP VOLTAGE vs i AND TEMPERATURE (T J ) V IN DROP VOLTAGE vs V IN DROP VOLTAGE vs I AND TEMPERATURE (T J ) 400 I = 3A 350 VDO(VIN V) (mv) 140 120 100 80 60 40 20 0 +125 40 +25 0 0.5 1.0 1.5 2.0 2.5 3.0 VDO(VIN V) (mv) 300 250 200 150 100 50 0 1.0 1.5 +25 +125 40 2.0 2.5 3.0 3.5 4.0 4.5 I (A) 7 VBIAS V (V) 8 6
µ µ µ VDO(VIN V) (mv) 200 180 160 140 120 100 80 60 40 20 V IN DROP VOLTAGE vs (V BIAS V ) AND TEMPERATURE (T J ) 40 +25 +125 I = 0.5A VDO(VBIAS V) (mv) 2200 2000 1800 1600 1400 1200 1000 800 V BIAS DROP VOLTAGE vs I AND TEMPERATURE (T J ) +125 40 +25 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 600 0 0.5 1.0 1.5 2.0 2.5 3.0 VBIAS V (V) I (A) 9 10 90 V BIAS PSRR vs FREQUENY 90 V IN PSRR vs FREQUENY Power-Supply Rejection Ratio (db) 80 70 60 50 40 30 20 10 V IN = 1.8V V = 1.2V V = 5V BIAS I = 0.1A I = 1.5A I = 0.5A SS = 1nF 0 10 100 1k 10k 100k 1M 10M Power-Supply Rejection Ratio (db) 80 70 60 50 40 30 20 10 V = 1.8V IN V = 1.2V I = 500mA I = 100mA = 1nF I SS = 1500mA I 0 10 100 1k 10k 100k 1M = 300mA 10M Frequency (Hz) Frequency (Hz) 11 12 Power-Supply Rejection Ratio (db) V IN PSRR vs (V IN V ) 90 80 70 V = 1.2V I = 1.5A SS = 1nF 1kHz 60 50 10kHz 40 500kHz 30 20 100kHz 10 0 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 Output Spectral Noise Density (µv/ Hz ) 1 0.1 I = 100mA V = 1.2V NOISE SPETRAL DENSITY SS = 10nF 0.01 100 1k 10k SS = 0nF SS = 1nF 100k VIN V (V) Frequency (Hz) 13 14 7
µ µ µ 2.0 BIAS PIN URRENT vs I AND TEMPERATURE (T J ) 2.0 BIAS PIN URRENT vs V BIAS AND TEMPERATURE (T J ) 1.8 1.6 +125 1.8 1.6 +125 1.4 1.4 I BIAS (ma) 1.2 1.0 0.8 0.6 0.4 40 +25 I BIAS (ma) 1.2 1.0 0.8 0.6 0.4 +25 40 0.2 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 I (A) V BIAS (V) 15 16 500 SOFT-START HARGING URRENT (I SS )vs TEMPERATURE (T J ) 1.0 LOW-LEVEL PG VOLTAGE vs URRENT I SS (na) 475 450 425 400 375 350 325 V OL Low-Level PG Voltage (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 300 50 25 0 25 50 75 100 125 0 0 2 4 6 8 10 12 Junction Temperature ( ) PG urrent (ma) 17 18 5.0 4.5 40 URRENT LIMIT vs (V BIAS V ) urrent Limit (A) 4.0 3.5 3.0 2.5 +25 +125 2.0 Drive capability of output FET limits I when VBIAS V is under 2.0V. 1.5 V = 0.8V 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V BIAS V (V) 19 8
µ µ µ V BIAS LINE TRANSIENT V IN LINE TRANSIENT 100mV/div SS = 1nF = 10µ F (eramic) 100mV/div = 10µ F (eramic) 100mV/div = 2.2µ F (eramic) SS = 1nF 5.0V 3.8V 1V/div 3.3V 1V/ µ s 1V/div 1.8V 1V/ µ s Time (50µ s/div) 20 Time (50µ s/div) 21 PUT LOAD TRANSIENT RESPONSE TURN-ON RESPONSE 100mV/div = 470µ F (OSON) SS =0nF 100mV/div = 100µ F (eramic) 0.5V/div SS = 2.2nF SS = 1nF V 100mV/div 2A/div = 22µ F (eramic) 50mA 3A 1A/ µ s SS = 1nF 1V/div 0V 1.2V V EN Time (50µ s/div) 22 Time (1ms/div) 23 POWER-UP/POWER-DOWN V PG (500mV/div) V = V = V IN BIAS EN 1V/div V Time (20ms/div) 24 9
µ Ω µ µ µ µ V IN IN PG IN 1µF BIAS EN TPS74901 R 3 V V BIAS BIAS 1µF SS GND FB R 1 10µF SS R 2 V = 0.8 1+ R 1 ( ) R 2 25. 10
Reference BIAS Simplified Block Diagram 26. IN V BIAS = 5V ±5% V IN = 1.8V V = 1.5V I = 1.5A Efficiency = 83% FB V Reference BIAS Simplified Block Diagram 27. V IN V IN V BIAS = 3.3V ± 5% V IN = 3.3V ± 5V V = 1.5V I = 1.5A Efficiency = 45% FB (V REF SS ) t SS = (1) I SS = t SSL (V (NOM) ) I L(MIN) (2) 11
µ µ µ Ω µ µ µ V N µv RMS ( µv RMS ) = 25 V (V) V (3) V IN V BIAS IN BIAS R IN BIAS EN TPS74901 GND 28. FB SS SS R 1 R 2 V 12
Ω Ω µ P D = ( V IN V ) (4) I (+125 TA) R θja = (5) P D θ 13
PB ross Section PB Top View T J R θj T 0.062in. R θs T S 4-layer. 0.062 FR4 Vias are 0.012 diameter, plated Top/Bottom layers are 2 oz. copper Inner layers are 1 oz. copper R θsa T A R θja =R +R +R θj θs θsa 2.0in 2 1.0in 2 0.5in 2 55 50 45 0 LFM θ JA ( /W) 40 35 30 250 LFM 150 LFM 25 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 Area (in ) 4.5 29. θ 14
PB ross Section PB Top View T J R θj T 0.062in. R θs 4-layer. 0.062 FR4 Vias are 0.012 diameter, plated Top/Bottom layers are 2 oz. copper Inner layers are 1 oz. copper T S R θsa T A R θja =R +R +R θj θs θsa 0.5in 2 1.0in 2 2.0in 2 50 45 40 0 LFM θ JA ( /W) 35 30 25 250 LFM 150 LFM 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 Area (in ) 4.0 30. θ 15
PB ross Section PB Top View T J R θj T 0.062in. R θs 4-layer. 0.062 FR4 Vias are 0.012 diameter, plated Top/Bottom layers are 2 oz. copper Inner layers are 1 oz. copper T S R θsa T A R θja =R +R +R θj θs θsa 0.5in 2 1.0in 2 2.0in 2 90 80 70 θ JA ( /W) 60 0 LFM 150 LFM 50 40 250 LFM 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 Area (in ) 4.0 31. θ 16
PB ross Section PB Top View 2.0in 2 T J R θj 1.0in 2 0.062in. T R θs 0.5in 2 T S 4-layer. 0.062 FR4 Vias are 0.012 diameter, plated Top/Bottom layers are 2 oz. copper Inner layers are 1 oz. copper R θsa T A R θja =R θj +R θs +Rθ SA 35 30 0LFM θ JA ( /W) 25 20 15 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 Area (in ) 4.0 32. θ 17
PB ross Section PB Top View 2.0in 2 T J R θj 1.0in 2 0.062in. T R θs 0.5in 2 T S 4-layer. 0.062 FR4 Vias are 0.012 diameter, plated Top/Bottom layers are 2 oz. copper Inner layers are 1 oz. copper R θsa T A R θja =R θj +R θs +RθSA θ JA ( /W) 55 50 45 40 35 30 25 20 15 0 LFM 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 Area (in ) 4.5 33. θ 18
Orderable Device Status (1) Package Type Package Drawing Pins Package Qty TPS74901KTWR ATIVE DDPAK KTW 7 500 Green (RoHS & no Sb/Br) TPS74901KTWRG3 ATIVE DDPAK KTW 7 500 Green (RoHS & no Sb/Br) TPS74901KTWT ATIVE DDPAK KTW 7 50 Green (RoHS & no Sb/Br) TPS74901KTWTG3 ATIVE DDPAK KTW 7 50 Green (RoHS & no Sb/Br) TPS74901RGWR ATIVE QFN RGW 20 3000 Green (RoHS & no Sb/Br) TPS74901RGWRG4 ATIVE QFN RGW 20 3000 Green (RoHS & no Sb/Br) TPS74901RGWT ATIVE QFN RGW 20 250 Green (RoHS & no Sb/Br) TPS74901RGWTG4 ATIVE QFN RGW 20 250 Green (RoHS & no Sb/Br) Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) U SN U SN U SN U SN U NIPDAU U NIPDAU U NIPDAU U NIPDAU Level-2-260-1 YEAR Level-2-260-1 YEAR Level-2-260-1 YEAR Level-2-260-1 YEAR Level-2-260-1 YEAR Level-2-260-1 YEAR Level-2-260-1 YEAR Level-2-260-1 YEAR 19
TAPE AND REEL BOX INFORMATION Device Package Pins Site Reel Diameter (mm) Reel Width (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W (mm) Pin1 Quadrant TPS74901KTWR KTW 7 SITE 41 330 24 10.6 15.6 4.9 16 24 Q2 TPS74901KTWT KTW 7 SITE 41 330 24 10.6 15.6 4.9 16 24 Q2 TPS74901RGWR RGW 20 SITE 41 330 12 5.3 5.3 1.5 8 12 Q2 TPS74901RGWT RGW 20 SITE 41 180 12 5.3 5.3 1.5 8 12 Q2 20
Device Package Pins Site Length (mm) Width (mm) Height (mm) TPS74901KTWR KTW 7 SITE 41 346.0 346.0 41.0 TPS74901KTWT KTW 7 SITE 41 346.0 346.0 41.0 TPS74901RGWR RGW 20 SITE 41 346.0 346.0 29.0 TPS74901RGWT RGW 20 SITE 41 190.0 212.7 31.75 21
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0.0625 (1,587) 0.0585 (1,485) H 0.410 (10,41) 0.385 (9,78) 0.303 (7,70) 0.297 (7,54) A 0.055 (1,40) 0.045 (1,14) 0.006 B 0.064 (1,63) 0.056 (1,42) 0.304 (7,72) 0.296 (7,52) 0.300 (7,62) 0.252 (6,40) 0.370 (9,40) 0.187 (4,75) H 0.330 (8,38) 0.605 (15,37) 0.595 (15,11) A 0.179 (4,55) 0.012 (0,305) 0.000 (0,00) 0.019 (0,48) 0.104 (2,64) 0.096 (2,44) H 0.017 (0,43) F 0.050 (1,27) 0.034 (0,86) 0.022 (0,57) 0.026 (0,66) 0.014 (0,36) 0 ~3 0.010 (0,25) M B A M M 0.183 (4,65) 0.170 (4,32) 4201284/A 08/01 NOTES: A. All linear dimensions are in inches (millimeters). B. This drawing is subject to change without notice.. Lead width and height dimensions apply to the plated lead. D. Leads are not allowed above the Datum B. E. Stand off height is measured from lead tip with reference to Datum B. F. Lead width dimension does not include dambar protrusion. Allowable dambar protrusion shall not cause the lead width to exceed the maximum dimension by more than 0.003. G. ross hatch indicates exposed metal surface. H. Falls within JEDE MO 169 with the exception of the dimensions indicated. (SBVS082B) 25
IMPORTANT NOTIE 2001.11