98 17 (2005) 81 () () E-mail : uesugi@mx4.ttcn.ne.jp
1) 1 2 3 QE 4 LSI 5 6L 18 7 8 9 10 11 12 2) 13 14() 15 1617 18 AN SN 19. 2 20 21 22 () 3) 23 SN 24() - 2 25 26 27(1) 28 (2) 4) 29 30QE 31() 32 () 33 (MT) 34 MT 5) 35-36 R&D- 37 38
(? ) () () MT 1 To get Quality, Don t measure Quality, Measure Functionality! (1988) () : () R&D : () : ()
M. S. Phadke (Bell Telephone Laboratories, 1982/8) Contact Windows Size (mean 3.0m, smallest variance) TEST CONTROLFACTORS LEVEL SLIDING LEVEL AMask Dimension() 2 2.5* Viscosity: Spin Speed B Viscosity 204* 206 C 1 C 2 C 3 CSpin Speed(rpm) Low Normal High* B 1 204* 2000 3000 4000* B Bake Temperature() 90 105* B 2 206 3000 4000 5000 DBake Time (min) 20 30* 40 Aperture: Exposure Time EAperture 1 2* 3 F 1 F 2 F 3 FExposure Time +20% Normal* 20% E 1 1 96 120 144 GDevelop Time (sec) 30 45 60* E 2 2* 72 90* 108 HPlasma Etch Time (min) 14.5 13.2* 15.8 E 3 3 40 50 60 (PEP-setting) Standard Levels * Optimum Levels
6. ORTHOGONAL ARRY 18 (2 1 3 7 ) (Golden Array) (2 1 3 7 =4374) SN ratio = 10log 10 B1 IMPROVEMENTS { } Mean S tan dard Deviation B3 B 1B 1 B 1B 2 Standard deviation of window size 0.290.14m 50% reduction Defect density (window size = 0) 0.120.04windows/chips 67% reduction Overall time (window photography) 50% reduction Yield 33%87%
9.
10.
1. L'( m) L''( m) 2 L( y) = L( m) + 1! ( y m) + 2! ( y m) + Λ 2. 2 [ (AAo) 2 = A0 k = 2 2 0 3. () 4. Ao/A, 4AAo6.25%,Ao100%A16
18
19.
() () ()
signal( η = 10log noise signal( η = 10log noise 2 ( ) SN: 10log : ( db) 2 ( ) 2 ( ) SN : 10log 2 ( )
2 1 2 σ 0 ( 0 ) = n y m = V 2 1 2 σ e = n 1 y y = V e ( ) 0 L 2 = kσ 0
1() (-) SN (No) 1 2 1. (L 108 )(--,1984) 2. -(,1990)() 3. (ITT,2000)SN 4. (SN)(,2001) 5. (1/120) (,2002) 6. 3() (,2003) 7. (2) (,2004) 8. (,2004)
()1() ()-1 or (or) nk ( nk) 101 (or-) ()(or )l() SN
2 X 2 2 2