SAWフィルタ不要のLTE/W-CDMA/GSMセルラー標準対応トランシーバLSI

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1 SAW LTE/W-CDMA/ GSM LSI SAW-less Transceiver LSI for LTE/W-CDMA/GSM Cellular Standards Patrick Rakers Daniel B. Schwartz Mahib Rahman James Mittel あらまし 4G CMOS LSI LSI LTE FDD/TDD 3G W-CDMA 2G GSM/EGPRS FDD 1 21 TDD W-CDMA EGPRS Cell850 EGSM DCS PCS LNA SAW SAW ARM7 API 2G/3G LTE LSI 90 nm CMOS Abstract A single-chip multi-mode multi-band CMOS transceiver was designed and implemented for 4G mobile platform. The transceiver supports both LTE FDD and TDD operation modes. It also supports 3G W-CDMA and 2G GSM/EGPRS operation with the same signal paths. The hardware supports FDD bands 1-21, TDD bands 33-40, W-CDMA bands - and -, and EGPRS bands Cell850, EGSM, DCS and PCS. The receiver has 9 primary and 5 diversity input ports that do not require external LNAs or interstage SAW filters. The automatic gain control system is fully autonomous. The transmitter has 8 output ports that do not require interstage SAW filters. An integrated transmit predistortion path reduces the impact of offset modulations. An integrated ARM7 core controls transceiver sequencing and enables a high level API that greatly reduces radio development time. Two industry standard digital interfaces provide compatibility to LTE basebands as well as 2G/3G basebands. It is fabricated in 90 nm CMOS technology. FUJITSU. 62, 4, p ,

2 まえがき LTE Long Term Evolution 3GPP 2G 3G GSM W-CDMA LTE IP GSM W-CDMA LTE OFDM Orthogonal Frequency-Division Multiplexing OFDM LTE 15 khz 1.4 MHz 3 MHz 5 MHz 10 MHz 15 MHz 20 MHz 90 QPSK 16 QAM 64 QAM 図 -1 RB RB 180 khz 1 ms RB LTE DC RB IIP2 2 LTE FDD Frequency Division Duplexing TDD Time Division Duplexing FDD TDD LSI の概要 LSI 図 -2 LSI CMOS 1 resource block 180 khz 12 subcarriers 15 khz 1 subframe 1 ms 1 TTI 1 resource block pair 1 slot 0.5 ms 7 OFDM symbols UE1 UE2 UE3 UE4 UE5 UE6 QPSK 16QAM or 64QAM -1 LTE Fig.1-LTE communication channel. 426 FUJITSU. 62, 4 07, 2011

3 -2 LSI Fig.2-LSI block diagram. SAW LNA SAW MIMO ADC DAC LSI D4G D3G 1 2 / ARM7 API LSI LTE FDD TDD 3G W-CDMA 2G GSM/EGPRS FDD 1 21 TDD W-CDMA EGPRS Cell850 EGSM DCS PCS LTE 受信部 LSI 1 SAW 2 LTE/3G/2G RF 3 AGC Automatic Gain Control 図 -3 SAW +24 dbm dbm FUJITSU. 62, 4 07,

4 LNM TCA LO 3G LTE DCR mode EGPRS VLIF offset BBA Biquad Sigma Delta A/D Sigma Delta A/D Wideband Detector RF/IF AGC Bandwidth Tuning Decimation Filters Decimation Filters Fine DCOC Fine DCOC Complex Mixers for EGPRS only Frequency Dependent Equalizer Matched/Selectivity Filtering DCOC D/A IP2 D/A Coarse DCOC IP2 Control Linearity Control RSSI On-Channel Power Detector RX_GAIN I/Q Equalization Digital AGC Fractional Resampling DIGRF4G/DIGRF3G External Interface -3 Fig.3-Receiver block diagram. 48 db LNA Low Noise Amplifier RF 3 IIP3 2 IIP2 LSI LNA IIP3 AGC IIP2 3 2 DA LTE GHz 7 2 TDD 428 FUJITSU. 62, 4 07, 2011

5 3 LTE LTE RSSI LSI 送信部図 -4 SAW LTE SAW >-160 dbc LTE TDD 4 RB GSM W-CDMA RB 図 -5 RB IF Intermediate Frequency RF RF+IF RF-IF RF RF-3IF C-IMR3 RF+5IF C-IMR5 RF RF 4 +I -Q -I +Q RF T I t /Q t RC VCO e jwt Transceiver Front End QG SVGA I i Q i Mod Tx DAC I Q (I+jQ)e jwt Digital Baseband RF -4 Fig.4-Transmitter block diagram. FUJITSU. 62, 4 07,

I Q 図 -6 I/Q I Q 3 1 13 LSI 図 -7 3 I Q n I 3-n Q I n Q 3-n MUX 3 C-IMR5 Image C-IMR3 Image LO Leakage C-IMR3 Image -3IF IF 0 IF 3IF 5IF -5 Fig.5-Offset transmit spectrum.

6 I Q 図 -6 I/Q I Q LSI 図 -7 3 I Q n I 3-n Q I n Q 3-n MUX 3 C-IMR5 Image C-IMR3 Image LO Leakage C-IMR3 Image -3IF IF 0 IF 3IF 5IF -5 Fig.5-Offset transmit spectrum. 5 C-IMR5 FIR 15 / アプリケーションプログラミングインタフェース LSI ARM7 LSI 4 R ds (V bb, V rf ) +I V bb R ds (V bb, V rf ) c(v gs (eff)) R L V rf +RF 24 -I Q C L Q LO V gs (eff) QG -RF Vrf V bb Fig.6-Interleaved switching mixer and non-linear resistance. 430 FUJITSU. 62, 4 07, 2011

n pred_byp a i pree_byp dig_atten dcoc D4G Interface I Q Upsample & Filter Cubic Pre-D Preemphasis 15 tap FIR IQ Gain/ Phase Upsample & Filter + + Tx DAC s Delay/Gain -7 Fig.

7 n pred_byp a i pree_byp dig_atten dcoc D4G Interface I Q Upsample & Filter Cubic Pre-D Preemphasis 15 tap FIR IQ Gain/ Phase Upsample & Filter + + Tx DAC s Delay/Gain -7 Fig.7-Transmit predistortion system. Bandgap Reference and Analog support circuits Primary Receiver Transmitter Receive PLL Receive ADC Transmit PLL Digital Circuitry ARM core memory DSP etc. TCXO Dist Clock PLL D4G Interface D3G Interface Secondary Receive ADC Secondary Diversity Receiver -8 Fig.8-Die photo. デジタルインタフェース LSI D3G 312 Mbps HSPA+ GSM W-CDMA D4G MIPI DigRF v4 DigRF v Mbps 2496 Mbps D4G GSM W-CDMA LTE LSI LSI D3G D4G LSI 評価結果 LSI 図 -8 表 -1 ~ 4 LSI RF RF LSI RF C-IMR3 図 db C-IMR3 FUJITSU. 62, 4 07,

8 C-IMR3 dbm/6.25 khz C PreD OFF +25C PreD ON +85C PreD ON -30C PreD ON Pout dbm -9 C-IMR3 Fig.9-C-IMR3 performance. -1 LTE/W-CDMA LTE 20 MHz mode W-CDMA B1 B4 B7 B17 B1 B5 B9 Units Center Frequency MHz NF db Sensitivity dbm EVM % RMS Duplex IIP dbm Half Duplex IIP dbm Full Duplex IIP dbm In-band IIP dbm -2 LTE/W-CDMA LTE W-CDMA B1 B4 B7 B17 B1 B5 B9 Units Center Frequency MHz Pout dbm EVM % RMS ACLR dbc ACLR dbc RX Band Noise dbc -3 GSM GSM EGSM DCS PCS Units Center Frequency MHz NF db Sensitivity dbm Image Rejection dbc IIP dbm In-band IIP dbm 432 FUJITSU. 62, 4 07, 2011

9 -4 GSM GSM EGSM DCS PCS Units Center Frequency MHz Pout dbm GMSK GPE % RMS MODORFS@200 khz dbc MODORFS@400 khz dbc 8PSK Pout EDGE dbm EVM EDGE % RMS Technology Package Supply Voltage Ports EGPRS bands W-CDMA bands LTE bands LTE bandwidths Interfaces nm triple well CMOS 6 metals 1 ultra-thick AP cap MIM capacitors 6.5 mm 9.0 mm 4 layer LGA RF 2.7 V 1.85 V Digital 1.8 V 1.2 V 9 Differential Primary Receive 5 Differential Secondary Receive 8 single-ended Transmit Cell850 EGSM DCS PCS MHz 3 MHz 5 MHz 10 MHz 15 MHz 20 MHz DigRF 4G DigRF 3G LSI 表 -5 むすび LTE/W-CDMA/GSM CMOS LSI SAW LTE LTE 1 13 LSI LTE 参考文献 1 MIPI Alliance Specification for DigRF SM v4 Version September MIPI Alliance Specification for DigRF 3G Version December D. Kaczman et al. A Single-Chip 10-Band WCDMA/HSDPA 4-Band GSM/EDGE SAW-less CMOS Receiver With DigRF3G Interface and +90 dbm IIP2 IEEE J. Solid State Circuit Vol:44 Issue:3 p (2009) 4 K. Hausmann et al. A SAW-less CMOS TX for EGPRS and WCDMA IEEE Radio Frequency Integrated Circuits Symposium (RFIC) p May 2010 FUJITSU. 62, 4 07,

10 著者紹介 Patrick Rakers Fujitsu Semiconductor Wireless Products RF IC Mahib Rahman Fujitsu Semiconductor Wireless Products Daniel B. Schwartz Fujitsu Semiconductor Wireless Products James Mittel Fujitsu Semiconductor Wireless Products IC 434 FUJITSU. 62, 4 07, 2011

Keysight Technologies LTE規格に準拠したトランスミッタのACLR測定

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