スピントロニクスの基礎 サンプルページ この本の定価 判型などは, 以下の URL からご覧いただけます. http://www.morikita.co.jp/books/mid/077461 このサンプルページの内容は, 初版 1 刷発行時のものです.
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ii 3 5 4 AMR (anisotropic magnetoresistance effect) GMR (giant magnetoresistance effect) 5 TMR (tunnel magnetoresistance effect) TMR 2005 6 HDD (hard disk drive) MRAM (magnetoresistive random access memory) 2011 7 2013 1
iii 1 1 1.1 1 1.2 3 4 2 5 2.1 5 2.1.1 5 2.1.2 8 2.1.2.1 10 2.1.2.2 12 2.2 15 2.2.1 16 2.2.2 20 2.2.3 24 2.2.4 26 2.2.5 29 2.2.6 3d 35 2.2.7 41 2.2.8 43 2.2.9 45 2.2.10 48 2.2.11 T 3/2 50 2.2.12 51 2.2.13 53 2.3 56 2.3.1 57
iv 2.3.2 1 59 2.3.2.1 59 2.3.2.2 63 2.3.3 65 2.3.3.1 66 2.3.3.2 67 2.3.3.3 68 2.3.3.4 69 2.3.4 71 2.3.5 72 2.4 73 2.4.1 73 2.4.2 75 77 3 79 3.1 79 3.1.1 79 3.1.1.1 80 3.1.1.2 82 3.1.1.3 83 3.1.2 86 3.1.2.1 88 3.1.2.2 89 3.1.3 91 3.1.3.1 92 3.1.3.2 93 3.1.3.3 Fe-Co-Ni 95 3.1.3.4 97 3.1.3.5 99 3.1.3.6 104 3.2 107
v 3.2.1 107 3.2.2 110 3.2.2.1 110 3.2.2.2 111 3.2.2.3 112 3.2.3 113 3.2.3.1 114 3.2.3.2 117 3.2.3.3 117 3.3 118 3.3.1 118 3.3.2 119 3.3.2.1 119 3.3.2.2 120 3.3.3 120 122 4 124 4.1 124 4.2 125 4.2.1 125 4.2.2 127 4.2.3 127 4.2.4 128 4.2.5 129 4.2.6 ρ, ρ, α = ρ /ρ 130 4.3 132 4.4 133 4.5 136 4.6 140 4.7 142 147
vi 5 149 5.1 149 5.2 151 5.3 TMR 153 5.4 TMR, AMR PHE 154 5.5 155 5.6 156 5.7 MgO 158 5.8 161 5.8.1 162 5.8.2 163 5.8.3 166 5.9 168 5.9.1 168 5.9.2 169 5.9.3 169 170 6 GMR, TMR 173 6.1 173 6.2 175 6.2.1 MR 175 6.2.2 GMR, TMR 175 6.2.3 176 6.3 177 6.3.1 177 6.3.2 MRAM 178 6.3.3 180 6.3.3.1 180 6.3.3.2 182 6.3.4 MRAM 184
vii 6.3.4.1 184 6.3.4.2 184 6.3.4.3 185 6.3.4.4 185 6.3.4.5 186 6.4 187 188 7 191 7.1 I V 191 7.2 192 7.3 STM 195 7.4 198 7.5 201 7.5.1 LLG 201 7.5.2 204 7.5.2.1 204 7.5.2.2 205 7.5.3 208 7.5.4 213 7.5.4.1 3d 213 7.5.4.2 214 7.5.4.3 216 217 220 1. 220 2. 221 3. 221 4. 222 223
1 1 1.1 1.1(a) 2 (b) 1.2(a) ds i e µ 1.1
2 1 µ = 1 2 µ 0 1.2 (x i e )d 3 x (1.1) 1) i e d 3 x = i e dx dy dz = I dx (1.1) µ = 1 2 µ 0I (x dx )= 1 2 µ 0I nx dx = nµ 0 IS (1.2) C C (b) n S (1.1) µ 0 µ 0 µ 0 µ p p = qs ±q s q +q s µ = q m s q m ± s q m Wb Wb m M Wb m/m 3 =Wb/m 2 (Bohr) 1 2.1 µ µ = g µ 0e 2m p (1.3) 2 (2.9) g 1 2 µ 0 e p
1.2 3 2π (1.3) 1.2 1 GMR, TMR 1.3 MRAM (magnetoresistive random access memory) HDD (hard disk drive) 6 1.4 (S. Bader) 1.3 1 1995
4 1 1.4 1) : (1999).
5 2 3d 3d 3d 2.1 2.1.1 M B σ B = µ 0 (H + M) =µ 0 H + µ 0 M = µ 0 H + J (2.1) B H M µ 0 (2.1) D = ε 0 E + P (2.2) D E P
6 2 ε 0 P J J M (2.1) µ 0 M M M M 1 µ m Fe µ =2.2 µ B µ B M µ 2.2 Z Z Z 1 2.1(a) 1 r m ω (= dθ/dt) e(ω/2π)[a] πr 2 I µ 0 IS 1 (b) µ ( ) eω µ = µ 0 IS = µ 0 πr 2 = µ 0eωr 2 (2.3) 2π 2 l l = r p p = mv : v = rω l = r(mv) =mr 2 ω (2.4) 1 (Maxwell)
2.1 7 2.1 (a) (b) (2.3) (2.4) µ = µ 0e 2m l (2.5) 2.2 (2.5) l l (l =0, 1, 2, ) l h 2π (2.5) µ = µ 0e 2m l (2.6) l l =1 µ µ B µ B = 4π 10 7 1.6 10 19 1.05 10 34 2 9.1 10 31 =1.165 10 29 [W m] (2.7) cgs µ B =9.273 10 21 [emu] µ B (Bohr magneton) µ B 1µ B 2µ B s s 2.2 (µ) (l)
8 2 µ s = µ 0e m s (2.8) (2.5) 2 p µ = g µ 0e 2m p (2.9) g =2 g =1 (2.9) γ γ = g µ 0e =1.105g [m/a s] (2.10) 2m γ g g 2.1.2 n l m l m s n 1, 2, 3, n =1, 2, 3 K, L, M n l =0, 1, 2,, (n 1) n l =0, 1, 2, 3, 4, s, p, d, f, g, n =3 M l =0, 1, 2 s, p, d l =2 d m l =2, 1, 0, 1, 2 5 m s = ±1/2 n =3 M Fe (1s 2 2s 2 2p 6 3s 2 3p 6 3d 6 4s 2 ) me 4 ε n = (4πε 0 ) 2 2 2 n 2 (2.11) Fe 2.3 n, l, m l,m s K N 4s 2.4 1 2 3 1 2 3 3 1 2
79 3 3.1 3.1.1 ± 1 3.1 (1) (2) (3) (4) 3.1
80 3 3.1.1.1 1 3.2 1 θ 0 θ 3.2 E = K u sin 2 θ M s H cos(θ 0 θ) (3.1) K u 1 θ E/ θ =0 2 E/ θ 2 > 0 M s cos(θ 0 θ) θ 0 M s cos(θ 0 θ) H 3.3 0 (θ =0 ) (θ 0 = 180 ) 3.3 (θ = 180 )
3.1 81 (3.1) H k =2K u /M s H = H k θ =0 H = H k θ = θ 0 (θ 0 = 135 ) 3.4 H θ =0 H =0.5K k 180 3.5 (θ =90 ) 3.4 (θ = 135 ) 3.5 (θ =90 )
82 3 θ 0 = 180, 135, 90 3 M s cos(θ 0 θ) 3.6 θ 0 = 180 H = H k H k θ 0 = 135 H = H k /2 θ 0 =90 H 1) 3.6 3.1.1.2 MRAM (3.1) E/ θ =0 2 E/ θ 2 > 0 1 2 sin 2θ h sin(θ 0 θ) = 0 (3.2) cos 2θ + h cos(θ 0 θ) > 0 (3.3) h = H/H k, H k =2K u /M s M s H k ε
3.1 83 ε = 1 2 sin2 θ h cos(θ 0 θ) (3.4) h cos θ 0 = h x x h sin θ 0 = h y (3.4) (3.2) (3.3) ε = 1 2 sin2 θ h x cos θ h y sin θ (3.5) 1 2 sin 2θ h y cos θ + h x sin θ =0 (3.6) cos 2θ + h x cos θ + h y sin θ>0 (3.7) (3.7) 0 (3.6) h x h y h x = cos 3 θ h y =sin 3 θ θ h 2/3 x + h 2/3 y =1 (3.8) h x h y 3.7 3.7 3.1.1.3 1) 180 3.8 θ 3.9 x
84 3 3.8 180 3.9 180 E = U w 2M s H cos θx (3.9) U w 2M s H cos θx 2 2 x (3.9) x E x = U w x 2M sh cos θ = 0 (3.10) 180 3.10(a) (θ =0 ) (b) (c) ( U w / x) U w (3.10) 0 a 2M s H a U w / x a b c d (d) 0 a b c d (c) (d) (c) U w / x (d) 1 3.11(a) (b) (b) Fe 5 Co 70 Si 15 B 10
3.1 85 3.10 3.11 Fe 5 Co 70 Si 15 B 10 Kersten U w = C AK A : K : K K +(3/2)λσ
86 3 σ = σ 0 cos(2πx/l) 180 90 2M s 2 π 2 l λσ 0 δ 4M s 2 δ 3πλ 100 σ 0 λ 100 [100] 100 200 σ 0 l Néel 3.12 Kersten Néel 1 3.12 3.1.2 3.13 1 10 9 10 4 Mn-Zn (disaccommodation : DA) vk u v : 1 Kersten Néel M sh 10 3 (0.1 0.01) = 10 2 10 erg/cm 3
3.1 87 3.13 K u : 1 k B T (TMR) (MRAM) (Larmor) MHz GHz (FMR) (ESR) MHz GHz (spin switching) FMR
173 6 GMR, TMR GMR GMR TMR (MRAM) GMR,TMR 6.1 1950 100 1955 1) (creeping) 1967 Bobeck 2) (1) (2) (3) (4) (5)
174 6 GMR, TMR 1970 1980 1988 Fe/Cr GMR 3, 4) 1 2 3 3 GMR GMR 10 1994 TMR 5, 6) MgO 7, 8) 9, 10) GMR TMR MRAM (magnetoresistive random access memory) MRAM MRAM MRAM MRAM
6.2 175 6.2 6.2.1 MR 1980 Ndφ/dt N 1980 1990 MR 1997 MR GMR GMR 2004 TMR TMR dφ/dt dφ/dt MR 6.2.2 GMR, TMR 6.1(a) MR GMR(TMR) 6.1 (a) (b)
176 6 GMR, TMR (b) GMR TMR 6.2 GMR TMR GMR 6.2 6.2.3 MR 6.3 TMR TMR MgO MgO TMR CPP-GMR (current perpendicular to plane GMR ) GMR TMR 6.3 MR
1972 1972 1973 1975 1985 1991 2007 1997 1998 CREST 1999 Scuola Internazionale Superiore di Studi Avanzati (SISSA) 2004 2009 c 2013 2013 3 28 1 1 1 4 11 102 0071 03 3265 8341 FAX 03 3264 8709 http://www.morikita.co.jp/ Printed in Japan ISBN978 4 627 77461 2