RoHS RoHS 2011/65/EU RoHS Web RoHS http://www.murata.co.jp/info/rohs.html
IC 1-1 IC Power Distribution Network PDN 1-2 Power Integrity PI 1) 2) 1-3 3) 4) 5) 1-4 1
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IC IC IC 1-3 1-3 (1) (2) (3) 3
IC IC 2.1 IC C-MOS 2-1 C-MOS C-MOS C-MOS IC (VDD) GND 1 0 6) C-MOS 01 10 2-1 7) 8) IC IC IC 1-3 2-1 4
IC 2-1 (1) (2) IC (3) IC 2-2 IC 2.2 1-3 (1) (2) 5
(3) (1) IC IC 2-3 PDN A) IC IC B) 9) 2.3 1-3 (2) (3) 2-4 IC 2-4 IC B' C B' C 6
2.3 6) 2-5 Insertion Loss I.L. db 50 S S21 S21 2.4 2-1 IC 2-6 (a) 2-6 (b) IC via 7
2-6 IC PDN 2-5 50 50 50 2-7 2-5 db 10 10 20dB 2-8 10MHz 8
2.5 9) IC 2-9(b) (c) IC IC IC 2-9 2-9 (b) (c) (a) 2-10 9
2-9 IC 2-9 (c) via 2-9 IC 2.6 2-9 (b) (c) 2-9 (a) IC IC 2-9(b) L C (2-2) 2 Z T C (F) L (H) ZT IC ZT IC I(A) V(V) 10) 10
Z T V I = (2-3) I =0.1AV=200mV IC L =1H 600 @100MHz (2-3) ZT =2 (2-2) C 0.25F IC 0.25F (2-2) (2-2) 11
10MHz 3.1 MultiLayer Ceramic Capacitor MLCC 3-1 1) 3-1 ESR ESL 3-2 V Z = 1 2 π f Cap Z = 2 π f ESL 1 f 0 = 2 π Cap ESL Z ESR 3-2 3-2 ESR ESL ESR ESL 3-2 12
V MLCC 3-3 2.01.25mm(GRM21 ) 25 (3dB) 2-5 50 3-3 MLCC ESL ESL MLCC ESL 3.2 3-4 via ESL(PCB)) 3-5 ESL(PCB)) ESL(PCB) 13
3.3 ESL(PCB) 3-6(a) ESL(PCB) via 3-6 ESL(PCB) ESL(PCB) 10mm MSL Micro Strip Line 3-7 10MHz 20dB 14
3-8 3-7 20MHz IC 6mm 1608 1FMLCC 15mm 3-8 (a) (b) 15
(c) 3-8(b)(c) 1/3 0.30 0.30 0.30 0.20 0.20 0.20 0.10 0.10 0.10 level (V) 0.00-0.10 level (V) 0.00-0.10 level (V) 0.00-0.10-0.20-0.20-0.20-0.30-200 -100 0 100 200 time (ns) -0.30-200 -100 0 100 200 time (ns) -0.30-200 -100 0 100 200 time (ns) 3-9 3-8 3m H V 3-8 (a) (b) (c) 3-9 (b) (c) 10dB 10dB 6mm 3-8 (a)(b) 1/5 3-9 (a)(b) 8dB 1/2.5 ESL(PCB) 16
70 60 50 40 30 20 H V 70 60 50 40 30 20 H V 70 60 50 40 30 20 H V 10 10 10 3.4 3.1 50 3-10 3-10 5 17
3.5 ESL ESR 3-11 3-12 11) 3-11 (b) 3-13 impedance (Ω) 10 1 0.1 0.01 frequencymh 18
10 impedance (Ω) 1 0.1 0.01 3-14 frequency MH (1) (2) (3) 10 (1) 2.6 (2) (3) 3-14 (d) ESL ESR 4 19
3-15~17 4MHz IC FET 3-15 MLCC 3-11 1F1000pF level (mv) level (mv) time (ns) level (mv) time (ns) time (ns) level (mv) level (mv) level (mv) time (ns) time (ns) time (ns) 3-16 3-15 MLCC 3-14 (b) 3-14 (c) 20
level (mv) level (mv) time (ns) level (mv) level (mv) time (ns) time (ns) level (mv) level (mv) time (ns) time (ns) time (ns) 3-17 3-14(d) ESL MLCC ESL ESL 4 21
level (mv) level (mv) time (ns) level (mv) level (mv) time (ns) time (ns) level (mv) time (ns) level (mv) time (ns) time (ns) 22
IC ESL 4.1 ESL MLCC ESL 4-1 ESL ESL 4-2 4-2 (a) LW 4-3 (a) MLCC 4-2 (b)(c) 4-3 (b) (c) 23
4-4 ESL L part 2L 2M = 2 4-5 MLCC ESL 1.6 0.8mm 1F 100MHz LW 1/5 1/2 MLCC ESL 1/10 4-5 MSL S ESL via ESLPCB 24
4-6 via via ESL PCB MLCC via via 4-5 25
4.2 ESL ESL 4.3 ESL 4-7 MLCC ESL 4-8 T ESL ESL MLCC 4-7 1020pH MLCC 1/30 1GHz 4-9 MLCC 1.60.8mm 26
27 F 100MHz 35dB
28 4-10 via ESLPCB T ESLPCB via 2) via via IC via via IC via via via via ESL ESR via via via via ESL ESR ESL ESR via via IC via via IC via via via via ESL ESR via via via via ESL ESR ESL ESR MLCC ESLPCB MLCC 4-11 1 F 50 5 0.5 GHz 30dB 1GHz 4-8 ESL T
4-12 (a) 60(b) 3 100MHz 40mm30mm 4-12 MLCC (a) 60 (b) 3 (a) (b) MLCC via 29
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4.4 IC 0.8±0.1 (1) (2) 0.15 +0.2 0.1 0.2 min. (2) 1.6±0.1 0.15 +0.2 0.1 (3) 0.8 +0.2 0.1 0.6±0.1 0.4±0.1 : Electrode (in mm) 0.2 min. 0.2 min. (2) (1) (3) 0.25±0.1 (2) 0.4±0.1 0.25±0.1 0.8±0.1 1.6±0.1 : Electrode (in mm) 0.8±0.1 0.3±0.2 0.4±0.2 0.6±0.2 2.0±0.2 (2) (1) (3) 0.85±0.1 1.25±0.1 (2) 0.25±0.2 : Electrode (in mm) 1.1±0.3 0.7±0.2 3.2±0.2 (2) (1) 0.25±0.2 (2) (3) 0.3±0.2 1.25±0.2 : Electrode (in mm) 31
32 LC LC LC LC 5.1 5- (a) (b) (a) IC (b) 5.6 5- IC IC (2-2)
5.2 5.1 5-2 5-3 Z EPR Z = 2π f L Z = 1 2 π f EPC 0 2 π L EPC f = 1 5-3 L) EPC) EPR) f 0 EPR EPC EPC EPC ESR 5-4 50 100 33
3dB 5-5 3.4 5-1 5.3 5.2 5.3.1 5-6 5-6 12) 34
5-7 5-8 5.3.2 5-8 Z R X 10MHz 10MHz 5-8 300MHz 5-4 EPC Q 35
5-9 5-8 -20dB/dec. 5.3.3 5-7 EPC 100MHz EPC 100MHz 5-10 EPC 5.4 LC LC 5-11 L C 20dB/dec. 36
9) LC (db) 0 20 40 60 80 100 20dB/dec. (db) L L 0 20 40 60 80 100 40dB/dec. 120 0.1 1 10 100 120 0.1 1 10 100 120 0.1 1 10 100 (db) 0 20 40 60 80 100 60dB/dec. T L C IC 5-1 L L C 5-12 5-12 LC L C 5-13 MLCC L LC 5-11 37
5-14 4MHz IC 1F L 10F 0-50 100 50 0-50 50 0-50 100 50 time (ns) 100-100 level (mv) level (mv) level (mv) -100 time (ns) -100 time (ns) 38
5.5 LC 10MHz LC 11) 5-15 LC 5-16 5-15 A 5-16 (a) 5-16 (b) LC 1GHz LC 5-17 LC 5-14 4MHz IC 39
1FMLCC 2200pF 6mm 2200pF MLCC 2200pF LC 10FMLCC LC 50 0-50 level (mv) level (mv) 100 50 0-50 -100 time (ns) 100 50 0-50 -100 time (ns) -100 time (ns) level (mv) 100 5-16 50 5-18 5-16 5-18 (a) LC 5-17(b) LC 40
5.6 EPC IC (2-2) 5.6.1 V = R I (5-1) ripple dc ripple V ripple R dc I ripple R dc 100m 1A 100mV 41
5.6.2 42
5.7 5.7.1 0603 BLM03P 1005 BLM15P 0.6-±0.03 0.3±0.03 0.25±0.1 0.3±0.03 0.5±0.05 0.15±0.05 1.0±0.05 0.5±0.05 : Electrode (in mm) : Electrode (in mm) 1005 BLM15E 1005 BLM15G 0.25±0.1 0.25±0.1 0.5±0.05 0.5±0.05 1.0±0.05 0.5±0.05 1.0±0.05 0.5±0.05 : Electrode : Electrode (in mm) (in mm) 1608 BLM18P 1608 6A 600 BLM18K 0.4±0.2 1.6±0.15 0.8±0.15 0.8±0.15 T 1.6±0.15 0.8±0.15 0.4±0.2 : Electrode (in mm) : Electrode (in mm) 1608 6A BLM18S 1608 BLM18E 1.6±0.15 0.8±0.15 1.6±0.15 0.8±0.15 0.5±0.15 T 0.4±0.2 0.4±0.2 : Electrode (in mm) : Electrode (in mm) 1608 BLM18G 2012 BLM21P 0.35±0.15 0.5±0.2 0.8±0.1 0.85±0.2 1.6±0.1 0.8±0.1 2.0±0.2 1.25±0.2 : Electrode (in mm) EIA CODE : 0805 : Electrode (in mm) 3216 BLM31P 4516 BLM41P 0.7±0.3 0.7±0.3 3.2±0.2 1.6±0.2 1.1±0.2 4.5±0.2 1.6±0.2 1.6±0.2 : Electrode (in mm) : Electrode (in mm) 43
5.7.2 3216 LQH31C 3225 LQ32C 2.3±0.2 1.6±0.2 2.5±0.2 2.5±0.2 1.8±0.2 2.0±0.2 3.2±0.3 1.6±0.2 3.2±0.3 2.5±0.2 0.7min. 0.7min. 0.7min. (in mm) 0.9±0.3 1.3±0.2 0.9±0.3 (in mm) 3225 LQH32C_33 53 2.5±0.2 2.5±0.2 A 1.55±0.15 A 3.2±0.3 2.5±0.2 A : 2.8 max. 0.9±0.3 1.3±0.2 0.9±0.3 (in mm) 4532 LQH C 5750 LQH55D 3.6±0.2 3.2±0.2 5.0±0.3 5.0±0.3 2.6±0.2 4.7±0.3 4.5±0.3 3.2±0.2 5.7±0.3 1.0min. 1.0min. 1.0min. (in mm) 1.3 1.7 1.3 min. min. min. (in mm) 6363 LQH66S 6.3±0.3 6.3±0.3 4.7±0.3 6.3±0.3 1.3 min. 1.7 min. 1.3 min. (in mm) 44
5.8 LC NFE BNX BNX 3216 NFE31P 6816 NFE61P 0.7±0.2 1.0±0.2 0.7±0.2 (1) (2) (3) BNX 1.6±0.15 3.2±0.35 1.6±0.15 : Electrode (in mm) 12.1±0.2 (1) (2) 9.1±0.2 (3) BNX022 (4) 4.2±0.3 (2.45) 3.1±0.2 0.3±0.1 0.3±0.1 1.05±0.2 1.6±0.3 (1) (3) (4) (4) (2) 7.0±0.2 1.55±0.2 1.3±0.2 (3) (4) (1) (2) : Electrode 1.0±0.3 1.55±0.2 2.5±0.2 (4) (in mm) L1 L3 C2 (1) B CB (2) L2 C1 (3) PSG CG (4) (1)-(4): Terminal Number PSG: Power Supply Ground CG: Circuit Ground CB: Circuit+B 0.7±0.2 2.6±0.3 0.7±0.2 (1) (2) (3) 6.8±0.5 1.6±0.3 1.6±0.3 : Electrode (in mm) 45
IC 6-1 IC IC IC IC 6.1 6-2 (PDN) IC IC V = I (6-1) Z P V (V) I (A) ZPPDN V IC ZP 46
47 6-3 6-3(a) 6-3(b) 6.2 PDN 6-4
6-5 PDN IC 6-3 (a) 3V 0.5 1A 10ns 1s 6-6 2F 5F 10F ESL 10nH ESLPCB ESR 50m 6-6 6-6 6-6 48
time (µs) 6-6 10F 6-7 ESR ESL ESR ESL ESL ESL time (µs) ESL di/dt 10ns di/dt = 110 8 A/s) 6.3 6-8 10F 1F MLCC ESL ESLPCB 2nH 49
ESR 10m time (µs) 6-9 1F 0.1F 1F 0.2s time (µs) 50
6.4 ESL ESL 6-10 ESL 10F ESL 0.2nHESR 50m ESL time (µs) 6.5 6-11 LPowerDelay 6-12 51
time (µs) 6-12 6-12 6-12 2F 6-11 RLC 13) 4LPowerDelay C (6-2) 2 R C R ESR ESL C 6-12 (6-2) 40F 6-12 F IC LPowerDelay TPowerDelay(s) LPowerDelay RL L = R (6-3) PowerDelay T PowerDelay 52
IC IC ESL IC 7.1 IC 7-1 PDN 10F 2.2F 0.47F 7-1 IC IC BC A PDN 7-2 7-1 PDN 7-2 10MHz ESL A PDN A PDN 53
7.2 IC IC MSL 7-3 Z PowerTerminal Z nal = Z cap + Z line PowerTermi (7-1) Z cap Z line Z cap via 54
Z line 7-3 L line Z cap ESL ESL cap IC Z PowerTerminal Z = Z + Z j 2π f ( ESL + L ) (7-2) PowerTerminal cap line Lline MSL l MSL 14) Lline L line 0.6 h 6 = 0.4l 10 (H) (7-3) w h MSL w l m (7-2) Lline ESL cap IC ESL cap via ESLPCB cap line 7.3 IC 7-3 IC Z T f TPCB l max 55
(7-2) Z PowerTerminal Z T f f T L line_max L Z ESL T line_max cap 2π f (7-4) T (7-3) Lline L line_max l max l = L line _ max 6 T T @ PCB cap 6 max 2.5 10 0.4 10 0.6 0.6 h w Z 2πf f T @ PCB h w ESL (m) (7-5) 7-4 IC l max l max l max l max Z T 7-5 l max IC IC Z T (7-5) ESL cap l max 7-5 IC IC Z T IC IC IC IC IC 56
(7-5) 2f T ESL cap Z T l max ESL Z T ESL ESL cap 7.4 7-5 ESL cap l max l max h w 7-6 l max 7-7 7-10 LW ESL MLCC f TPCB IC 100MHz f T@PCB IC 7-7 7-10 l max ESL ESL l max ESL l max PDN 7-7 7-10 0.2@100MHz 1 MLCC 2f T ESL cap Z T ESL cap ESL ESL cap MSL MSL 57
58
59
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PDN IC PDN 1) PDN IC PDN PDN Power Integrity PI IC IC 8-1 8.1 8-1 8-1 8-2 15) PDN IC 61
IC 8-2 8-2 8.2 PDN IC (ZT) 8-3 PDN IC 8.7 8-2 BGA PCB 62
8.3 8-2 PDN 8-4 1) Z T 8-4 8-5 8-6 V ZT 8-6 f min C cap f max ESL total ESL total 63
ESL cap L line ESL cap ESL via log Z 1 Z = 2f C cap Z =2f ESL total Z T ESR total f min 1 = 2 π Z T C cap f max Z T = 2π ESL total log f 8-6 ZT ZT ESR total Z T ESR Z T 8-7 ESL total 8-4 64
log Z f min 2 1 = 2 π Z T C Cap 2 f max 1 = Z T 2 π ESL total 1 Z T 2 log f IC ESL 8-8 log Z Z T log f log Z log f Z T 65
8.4PCB 8-2 IC PCB PCB f T@PCB IC 10MHz100MHz PCB f T@PCB IC IC PCB 8.5 8-6 ESR ESL ESR ESL 8-9 MLCC 2.2F ESR 10MHz MLCC MLCC ESL 8.6 IC PCB MLCC IC IC 66
8-10 2) 8-10 (a) 8-11 F 10000pF 1000pF 100pF F 8-10 (b) 8-12 via via 67
-10 ESL 8-13 MLCC ESL ESL MLCC 10 8.7 8-14 IC MSL 68
8.7.1 8-15 ZT IC V Z T = (8-1) I VIC I IC 16) 17) Z T f T@PCB IC 100MHz 8.7.2 8-16 LPower C bulk L C bulk (8-2) Z Power 2 T LPower L line 0.6 h 6 = 0.4l 10 (H) (7-3) w h MSL w l (8-3)L power L powerresponce L Powe Responce = Z t (8-3) T Power Responce t powerresponce 69
C bulk L Power 2 Z T 0.6 h 6 L line = 0.4l 10 w l 8.7.3 8-17 Cboad Lbulk (8-2) L C boad (8-4) Z bulk 2 T Lbulk ESL IC 8-17 70
C boad L Z bulk 2 T 0.6 h 6 L bulk = 0.4l 10 w l 8.7.4 8-18 IC l max f T@PCB Z T Z 2 T πf T @ PCBESLcap 6 l max 0.4 10 (m) (7-5) 0.6 h ft @ PCB w ESLcap ESL ESL via ESLPCB) 71
l l max Z 2 f T π @ 6 max 0.4 T PCB cap 10 0.6 f T @ PCB ESL h w 8.7.5 l max 8-19 ESLcap l max ESL l max 8-20 72
0.6 Z h 6 V T = L line = 0.4l 10 w I l L Power L bulk C bulk C 2 boad Z 2 T πf @ ESL 2 6 Z Z lmax 0.4 T PCB cap 10 0.6 T T h f T @ PCB w 8.8 PDN CPU m ESL 8-21 73
PDN DC-50MHz 5m 2m L PowerDelay 10nH L Power 36 LW 16 16 ESL 330F MLCC 10F MLCC 100F LW 100F 100F 74
IC IC PI IC MLCC ESL GHz 75
1), ",", vol.12 No.3, May, 2009 2), "," pp.117-129,, EMC, 2007 9 No.233 3) Mark Montrose,, " EMC - -,", 2006 4) Brian Young, "Digital Signal Integrity Modeling and Simulation with Interconnects and Packages," Prentice Hall PTR, 2001 5) Clayton R. Paul,, "EMC,", 1996 6), "," CQ, 2002 7) " DC,", TE13JT, 1996 8), " EMC,", 2006 9) ",", 1986 10) Larry D. Smith, "Frequency Domain Target Impedance Method for Bypass Capacitor Selection for Power Distribution Systems", pp.119-136, Power Distribution Network Design Methodologies, IEC, 2008 11), " EMC,", 2005 12), "," pp.52-57, EMC, 2007 No.235 11 13), "," 2006 14) Stephan H. Hall, Garret W. Hall, James A. McCall, "High-speed Digital System Design; A Handbook of Interconnect Theory and Design Practices," Wiley-Inter Science 2000 15) Mikhail Popovich, Andrey V. Mezhiba, Eby G. Friedman, "Power Distribution Networks with On-chip Decoupling Capacitors," Springer, 2008 16) Madhavan Swaminathan, A. Ege Engin, "Power Integrity Modeling and Design for Semiconductor and Systems," Prentice Hall PTR, 2008 17),", vol.12 No.3, May, 2009 76