IC,,,, 1 IC,,,,, MOSFET, MOSFET,,, TH 2.5 V V REF 23.3±0.3 U.V.L.O. comp. 6.0±0.3 1/8 V 9 6 2.4±0.25 9 8 7 6 5 4 3 2 1 0.3 +0.1 0.05 3.3±0.25 0.5±0.1 2.54 1.5±0.25 1.5±0.25 SIP009-P-0000C V CC Unit : mm 1.4±0.3 30 3.0±0.3 One shot Under voltage Over voltage clamper clamper Timer Drive 8 V OUT MPI 2 Current comp. GND 7 Multiplier 2.5 V EO 3 OVP comp. 2.6 V 5 1 Error amp. 4 2.5 V OVP CS EI 1
Pin No. 1 CS 2 MPI 3 EO / 4 EI 5 OVP 6 7 GND 8 V OUT 9 V CC V CC 35 V CS V CS 0.5 +7 V MPI V MPI 0.5 +7 V EI V EI 0.5 +7 V I O ±150 ma I OP ±1 A I BI +5 ma I BO 5 ma P D 874 mw * T opr 30 +85 C * T stg 55 +150 C ) * : T a = 25 C 保守廃止 保守予定品種 保守品種 廃品種を V CC 0 34 V T a = 25 C 1 V EITH1 2.35 2.50 2.65 V L V EOL I EO = 0 ma, V EI = 5 V 1.0 1.6 V H V EOH I EO = 0 ma, V EI = 5.0 5.7 V I EI V EI = 0.3 1.0 µa I EO V EI =, V EO = 1 V 0.25 0.50 0.75 ma 2
( ) T a = 25 C D () V MPIH V EO = 5 V 4.0 4.5 V D () V MPOH V EO = 5 V 4.8 5.4 V G MP 1.0 1.2 1.4 1/V I MPI V MPI = 1.5 3.0 µa TH 1.2 1.5 1.8 V d 50 100 200 mv H H I B = 5 ma 7.0 7.5 8. L L I B = 5 ma 0.3 0.2 V CSOFF 3.5 15 mv I CS V CS = 0.5 2.0 µa V OVP 2.45 2.60 2.75 V V OVP V EITH1 70 100 130 mv L V OUTL I OUT = 100 ma 0.9 1.5 V H V OUTH I OUT = 100 ma 9.2 10.2 V V OUTSTB I OUT = 10 ma 0.8 1.5 V U.V.L.O. V CCST 9.2 10.0 10.8 V U.V.L.O. V CCSP 7.0 8.0 9. U.V.L.O. dv CC dv CC = V CCST V CCSP 1.75 2.00 2.5 I CCSTB V CC = 7 V 40 80 120 µa I CC V CC = 12 V 6.0 10.0 ma ), 2 V EITH2 T a = 25 C +85 C 2.3 2.7 V G AV 85 db f BW 1.0 MHz D () V MPIL V EO = 5 V D () V MPOL V EO = 5 V td CS 200 ns td OVP 500 ns t r V CC = 12 V, V OUT = 10% 90% 50 ns t f V CC = 12 V, V OUT = 90% 10% 50 ns td TIM 400 µs 3
Pin No. I/O 1 7.1 V CS : I MOSFET, CS MOSFET, 1 V OUT "L" MOSFET 2 MPI : I 7.1 V AC 2 3 EO : O 7.1 V 7.1 V /,,, 3 4 7.1 V 7.1 V EI : I, IC(2.5 V typ.) 4 5 OVP : I 7.1 V 7.1 V, MOSFET, 5 4
( ) Pin No. I/O 6 : I PV CC 7.1 V 7.1 V, MOSFET 6 保守廃止, 7 GND : GND 7 GND 8 V OUT : O 9 MOSFET 8 9 V CC : 9 1 U.V.L.O., ( 7.1 V), / MOSFET 保守予定品種 保守品種 廃品種を 5
[1] SIP009-P-0000C P D T a 1 000 900 874 P D (mw) 800 700 600 500 400 300 200 100 R th( j a) = 143 C/W P D = 874 mw (25 C) 0 0 25 50 75 85 100 125 150 [2] T a ( C) 1. 1), 11020 (A), 40 DC(B) (C, D) 40,,, ( > ) D.(I IN ) 0 A C.(V IN ) (AC) I IN V IN A.(E IN ) E IN(max), E IN(max) < E OUT E IN B.(E OUT ) 40DC 保守予定品種 保守品種 廃品種を SBD E OUT 保守廃止 1. 6
( ) [2] ( ) 1. ( ) 2) ( 2, 3) (1) (E IN ) (E IN ), (MPI ) (2) (E OUT ) (E OUT ), ( (EI) ), (EO ) (3), MPI EI (MPO) ( ) 2.5 V typ. MOS MOS 2. (MPO) MOSFET(CS) (IC) MOS = = (IC) (4) ( MOSFET)(, )CS (5) CSCS, RS, (6),, (E OUT ) 7
( ) [2] ( ) 8 1. ( ) 2) ( 2, 3) ( ) E IN MPI 2 GND 7 TH 2.5 V V REF 2.5 V 3 EO 1/8 V 2.6 V 2.5 V 9 6 1 4 V CC 3. 8 5 V OUT OVP CS EI MOS On MOSFET MOS Off SBD E OUT (7) ( ), CL, (8) HL (9), < >, (E IN )(E OUT ), 2,
( ) [2] ( ) 1. ( ) 3) (1) (), MOSFET, (), IC,, IC ( IC, E, ()) IC IC, MOSFET, MOSFET, V CC MOSFET TH (1.5 V typ.) OFF ON OFF I D 4. SDB I DS I DS I D GND 5. 9
( ) [2] ( ) 1. ( ) 3) (1) ( ) < > 5 ma, +5 ma,, R B R B, R B,, /, MOSFET,, MOSFET C P, 1 L P,, MOSFET,,, ±5 ma RB R B :,, T OFF R B :,, V OUT C B B A R B C P L P L P C P A B TH MOSFET On MOSFET Off 10
( ) [2] ( ) 1. ( ) 3) (2) CS MOSFET MOSFET,,, D 5 V, MOSFET, S/N0.22 Ω 0.47 Ω, MOSFET,, MOSFET,,, I CS 6. CS (3) MPI AC D 4.5 V typ., D 5.4 V typ. (4) EI/EO EI EI, (2.5 V typ.),, EI EO, EI D,,, EI EO,, (),, (2.5V typ.) 0 A 3 4 EI SBD EO 7. EI/EO 11
( ) [2] ( ) 1. ( ) 3) (5) V OUT, MOSFET ±1 A, TO-220MOSFETTOP-3,, MOSFET,, V OUT GND PV CC V OUT GND V G (6) V CC U.V.L.O., V CC (U.V.L.O. ) <V CC > 1 typ., 8 V typ., 2 V typ., C1,, (650 µa) V D MOSFET V D V G 8. V OUT I CC U.V.L.O. Off 0 8 10 V CC V OUT GND R1 C1 IC On V CC V,, V CC GND C1 12
( ) [2] ( ) 1. ( ) 3) (6) V CC ( ) 2. <V CC >,, IC,,, 2, GND,, MOSFET,, PV CC V OUT 1) IC,,, IC,, 400 µs (typ.), ( 9),, (IC) MOSFET 0 A (IC) 0 A 400 µs typ. GND R1 R2 400 µs typ. MOSFET 9. 13
( ) [2] ( ) 14 2. ( ) 2) (1),,,,, ( 10), IC,, MOS MOS MOS MOS MOS 0 A 0 A MOS 10. (2) IC,,, AN8031 = 2.5 (typ.) = 2.63 V (typ.) [] (5%) 5%,,, MOSFET,,, 5%, ( 11),, SBD MOS,, 0 A
( ) [2] ( ) 2. ( ) 2) ( ) (2) ( ) MOSFET 42 40 0 A 5% 11. (3),,, (), IC, ( 12 ) 0 A MOSFET 0 A 12. 15
( ) [3] AN8031 AN8031 EI (PV CC V CC V CC ) EI : OVP : E IN(+) E IN( ) E IN(+) E IN( ) 1) MPI PV CC AN8031 COM V CC V OUT EO CS 2) MPI COM V CC EI V OUT EI EO OVP CS SBD SBD E O(+) 5 10 E O( ) E O(+) 2,, E O( ) ) OVP, EI 16
C1 L1 EO (DC 40) EI R8 1.5 MΩ L2 SBD + R1 1 MΩ COM V CC 12 V A C3 47 µf R7 330 Ω R3 10 kω R10 1.5 MΩ R11 10 kω B SBD C2 1 µf R2 13 kω F G R9 10 kω R6 0.33 Ω 1 W R4 12 Ω C COM R12 10 MΩ D E V OUT 8 CS 1 OVP 5 EI 4 C7 0.1 µf V CC 9 7 GND 6 MPI 2 3 EO C4 10 µf C5 0.01 µf C6 0.001 µf 17
( ) 1 ms/div 10 ms/div A (EIN) B (MPI) C ( ) D (V OUT ) E (CS) F (EI) 1 V/div 0.4 V/div 2/div 2 V/div 0.2 V/div 0.5 V/div 14 2 V 7 V 12 V 0.8 V 2.5 V 2/div 1 V/div 2 V/div 0.2 V/div 0.5 V/div 14 12 V 7 V 0.8 V 2.5 V 50 G (EO) 5/div 10 18
( ) 20 ms/div E (CS) G (EO) E (CS) G (EO) 0.2 V/div 5/div 0.2 V/div 5/div 1.2 V 40 10 0.8 V 40 10 () : 10 (AC) : 40 (DC) 20 ms/div : 200 ma (2 kω) 19
保守廃止 保守予定品種 保守品種 廃品種を