Netsu Sokutei 17 (1) Control and Measurement of Oxygen Partial Pressure, and Thermodynamic Properties Toshihide Tsuji The oxygen partial pressur

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Netsu Sokutei 17 (1) 41-54 Control and Measurement of Oxygen Partial Pressure, and Thermodynamic Properties Toshihide Tsuji The oxygen partial pressure as well as temperature and the composition of oxide are one of the important parameters for studying phase equilibria. Thermodynamic properties of phase boundaries and those of nonstoichiometric oxide are obtained from the phase diagram. The defect structures of nonstoichiometric oxide are discussed from the oxygen partial pressure dependence of the departure from stoichiometric composition and that of the electrical conductivity. The solid electrolyte and oxide semiconductor oxygen sensors are used for measurement of the oxygen partial pressure. The principle and some problems of measurement, and characteristics of each oxygen sensor are reviewed briefly, and both oxygen sensors are compared each other. The oxygen partial pressures in the intermediate and low oxygen partial pressure ranges are controlled precisely by pumping oxygen into or from flowing (or circulating) gases such as inert, CO2 and H2 gases with a stabilized zirconia cell. The application of oxygen sensor and oxygen pump to obtain thermodynamic properties of phase boundaries and nonstoichiometric oxide, and to determine defect structure of nonstoichiometric oxide at constant temperature is described. Department of Nuclear Engineering, Faulty of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464, Japan

Fig. 1 T-O/U ratio phase diagram for U-O system3).

Fig. 2 Log PO2-O/U ratio phase diagram for U- O system3). Fig. 3 Chemical potential diagram for U-O system3).

Fig. 4 Principle of the measurement by solid electrolyte oxygen sensor. Fig. 5 Solid electrolyte oxygen sensor8). Fig. 6 Temperature and oxygen partial pressure ranges (shown shaded) where the ionic conductivity is larger than 99% of the total conductivity17).

Fig. 7 Cobaltous oxide oxygen sensor8).

Fig. 9 Dependence of the resistivity of Co1-x MgxO on the oxygen partial pressure at 1273K24).

Table 1 Oxide semiconductor oxygen sensor Fig. 10 Electrical conductivity of non-stoichiometric barium titanate versus oxygen partial pressure at 1253, 1263 and 1283K25).

Fig. 11 The controllable oxygen partial pressure range using Ar-O2 (or He-O2) and CO- CO2 mixtures, where mixing ratios of gases are assumed to be within the range from 1/500 to 500. Netsu Sokutei 17(1) 1990-49-

Fig. 12 The solid electrolyte oxygen pump and the electrode assembly32). Fig. 13 Four-electrode zirconia electrolyte system for control of oxygen activity in flowing gases29). Fig. 14 The plots of oxygen partial pressure vs. cell current at constant argon gas flow rate of 1.87 cm3s-1 in the range of current 0.02-18mA32).

Fig. 16 Relationship between the oxygen pressure and the applied current36). Fig. 15 Schematic diagram of the apparatus, 1: detecting cell, 2: stabilized zirconia tube used for the oxygen pump, 3: porous platinum electrode of the oxygen pump, 4: furnace for the oxygen pump, 5: potentiostat, 6: circulating pump, 7: monitoring cell, 8: mullite reaction tube, 9: furnace for the monitoring cell, 10: alumina bubbles to preheat the gas35). Fig. 17 The plots of oxygen partial pressure obtained from the extrapolation of the calibration line by solid electrolyte oxygen sensor vs, cell current at a constant flow rate of 1.90cm3s-132).

Fig. 18 Oxygen partial pressure-composition isotherms for U-O system37).

Fig. 21 Schematic representation of the relationship between the relative concentration of defects and Pot for UO2+x. The equations indicate the conditions for electroneutrality and the dependences

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