2 ( ) PVD (Physical Vapor Deposition)
G.Lim et.al., Robotica, 14 (1996) pp.499-506
( ) ( Ionics, 20, 9 (1994) p.147) MEMS
CVD (Chemical Vapor Deposition) CVD MacDonald et.al. MEMS 90
CVD 160-220ºC 1,1,1,5,5,5,5- hexafluoroacetylacetonate Copper (I) viniltrimethylsilane ( (ANELVA) SDM-2000-193 (2000) p.43)
SiC (M.Hiratsuka et.al., APCOT-MNT, (2004) p.745) Source :TEOS+O 3 Deep RIE SiO 2 CVD (C.Chang, T.Abe et.al. 19 th Sensor Symposoium (2002))
TOP Silicon Silicon dioxide Bottom Trench-refilled TEOS oxide Trench-refill ( ) (C.Chang, 19th Sensor Symp.(2002))
CVD SiC (T.Itoh, Transducers'03 (2003) p.254) SiC ( ) K.O.Min, S.Tanaka
CVD VLS M.Ishida et.al., Pacific Rim Workshop on Transducers and Micro/Nano Technologies, (2002) 295-298
CVD (H.Miyashita et.al. : Proc. of MEMS '2001, (2001) 301-304)
(H.Miyashita et.al., MEMS 2001)
Photo Electroplating SORTEC LIGA X (LI) (G) (A)
X ( ~10) Ni ( ) Ni LIGA (W.Ehrfeld et.al., Proc.IEEE Micro Robot and Teleoperators Workshop,(1987) 1-11) LIGA (1)
LIGA (2) LIGA
13 MeV Deep proton lithography X (M.Kufner, et.al.: Microsystem Technologies, 3 (1996)) Deep proton lithography 36 m SU-8
Deep RIE (X.Li et.al., MEMS 2001) Deep RIE Ni 1935 Ni
(X.Li et.al., Sensor symposium, (May 2002))
T.Abe et.al. Transducers 01 SiO 2
SiO 2 CVD ( ) (6th SEMI Microsystem/MEMS Seminar, Makuhari (2002) p.117)
GeO 2 -SiO 2 CVD (6th SEMI Microsystem/MEMS Seminar, Makuhari (2002) p.117)
( ST-92-7 (1992) 9-17)
TEG
Fe-Ni
(Nisase et.al. Transducers 87)
(EV : /MEMS ( ) 2003 p.330) Si (T.Suni (VTT Electronics), J.Electrochem.Soc.,(2002) p.g.348)
Si RFMEMS (k -cm) Si Si p ++ Si (+ Ge) Poly-Si (5-20 m) Epi-poly Si SiO 2 Poly-Si MEMS (1) (OKMETIC) ( )
B ( ) Ge ( ) (H.-J.Herzog et.al., J. of the Electrochemical Soc., 131 (1984) pp.2969-2974) Si Si SiO 2 (5-20 m) SiO 2 SOI ( ) Si Si Si SiO 2 Doulble SOI MEMS (2) (OKMETIC, KST World)
SOI Deep RIE Si
Au Au-Si Au-Si
40,000 rpm
(, 4 1994 )
66 2000 p.1265
( )
( ) ( )
1100 imems( ): 3 m BiCMOS interleaved with 2-4 m poly Si (M.W.July: Tech.Digest solid-state Sensor, Actuator and Microsystems Workshop, Hilton Head (2004) 27-32) : PSG : HF (400 ) : Ge : H 2 O 2 polysi-ge Al (A.E.Franke, J.M.Heck, T.-J.King and R.T.Howe: J.of Microelectromechanical Systems, 12 (2003) 160-171) (R.H.Fan, L.Fan, M.C.Wu and C.J.Kim: Porous polysilicon shell formed by electrochemical etching for on-chip vacuum encapsulation, Tech.Digest solid-state Sensor, Actuator and Microsystems Workshop, Hilton Head (2004) 332-335)
LPCVD(600,550mTorr) Poly-Si LPCVD poly-si (LTO( CVDSiO 2 )) (G.M.Dougherty et.al., J.of Microelectrochemical Systems, 12 (2003) pp.418-423) 49%HF (R.He et.al., MEMS 2005, p.544)
(Polypropylene carbonate) PAG(Photoacid Generator) (J.P.Jayachandran et.al., J.of Microelectromechanical Systems, 12 (2003) pp.147-158) PECVD SiO 2,SiN (J.P.Jayachandran et.al.(georgia Inst. of Technology), J.of Microelectromechanical Systems, 12 (2003) pp.147-158)
(C.G.Courcimault et.al.(georgea Inst. Of Tech.), Solid-S)tate Sensors, Actuators and Microsystems Workshop, Hilcon-Head Island, June 6-10 (2004) pp.200-203) ( )
HEXSIL (HEXagonal SILicon)ﾌﾟﾛｾ ｽ (C.Keller et.al., Solid-State Sensor and Actuator Workshop (1994) 132-137) HEXSILﾌﾟﾛｾｽで作られ た磁気ﾍｯﾄﾞ用ｱｸﾁｭｴｰﾀ (D.A.Horsley, MEMS 97) Very large numbers of very small components Independent parallel fabrication of components Fabrication at high density, assembly at lower density Hybrid systems built from standard components Why Micro Self-Assembly? C2W Enabling technology for complex integrated microsystems (Karl F. Böhringer, University of Washington, Seattle) 51
Driving force for assembly: Minimization of surface energy with hydrophobic-hydrophilic interfaces: Alkanethiol self-assembled monolayer (SAM) on Au forms hydrophobic surface Organic lubricant provides capillary action Hydrophobic area Lubricant Surface Tension Driven Micro Self- Assembly Also see [Srinivasan et al. 99, Whitesides et al. 90s] Second Assembly Result [Transducers 01, JMEMS 03]
Passivation layer (silicon nitride) Cr/Au Cr/Ni SiO 2 Si substrate Electrical contact Binding site Fabrication of the Substrate for LED Assembly Lubricant wets Au binding site Ni electroplating seed is free from lubricant Top view of a fabricated substrate for LED assembly Electrical Connectivity
(K.Minami et.al., ) CW CVD 10 m/min
CW CVD Debris No Debris In air In vacuum
Depth of ablation (µm) 2000 1600 1200 800 400 Laser fluence : 210J/cm 2 105J/cm 2 100ms 500ms 1s 10s 50s Laser pulse : 150fs Wavelength : 775nm Repetition Rate : 1KHz 0 1 10 100 1000 10 4 10 5 Laser irradiation time (ms) Si
( (1998) )
Ga Ga + FIB (Focused Ion Beam) ( (1998) )
(K.Sato et.al., MEMS 91)
(M.Esashi, Sensors and Actuators, A21-A23 (1990), 161-167)
FTIR Si 18 (2001) 60) (K.Minami et.al.,
( )