Taro12-イノベ－ション経営研究会

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5 79 90 BP

6 Made In America

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12 1980 DRAM 1990 DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM

13 DRAM DRAM DRAM DRAM 1985 DRAM DRAM TI DRAM DRAM 1998 TI DRAM DRAM 2000 DRAM 2001 DRAM NEC50 50 DRAM DRAM NEC DRAM NEC DRAM NEC DRAM DRAM DRAM 1998 DRAM - 8 -

14 DRAM M DRAM DRAM DRAM DRAM DRAM DRAM 55 (45 ) LSI ,000 9,000 ( ) nm 11 SoC ASPLA(Advanced SoC Platform Corp.) 315 NEC 90nm NEC NEC

15 DRAM DRAM (7) DRAM 2000 DRAM IDC Japan 5/2001 DRAM DRAM DRAM 1970 DRAM PMOS(P-channel Metal Oxide Semiconductor) TI 1 1 DRAM DRAM TI DRAM 16 DRAM DRAM DRAM DRAM

16 DRAM PMOS NMOS(N-channel Metal Oxide Semiconductor) E D E/D NMOS CMOS(Complementary Metal Oxide Semiconductor) DRAM TI 1970 DRAM DRAM k DRAM TI 16 DRAM DRAM 64 DRAM DRAM DRAM DRAM TI 3 DRAM k DRAM NEC 256k DRAM 1 1M DRAM NMOS CMOS DRAM 1DRAM 1985 DRAM M DRAM ( )

17 16M DRAM 64M 256M DRAM DRAM 1980 DRAM 1990 DRAM DRAM TI NEC M M M M M DRAM DRAM 1980 DRAM DRAM TQC DRAM 1990 DRAM DRAM

18 DRAM DRAM DRAM DRAM ( ) DRAM

19 DRAM DRAM DRAM DRAM DRAM DRAM DRAM 1996 DRAM DRAM DRAM DRAM 5 DRAM DRAM SRAM MOS

20 25 5 DRAM DRAM WSTS DRAM DRAM DRAM TI

21 DRAM DSP DRAM DRAM DRAM 4 A IC S IC A A

22 SDR-3X ROBODEX2000ASIMO RSD-3X Business Week RoBolution BP [Business Week]

23 NEC MOS LSI MOS LSI QT-8D MOS LSI 1970 ROM WD-3000 PROM(Programmable Read Only pp

24 Memory) PROM PROM PROM PROM PROM ROM ROM ROM NMOS IQ ROM NMOS 64 CMOS CMOS NMOS NMOS 64 ROM 3 ROM (Serial-parallel ROM cell structure) ROM IQ CMOS 256 ROM IQ-5000 ROM ROM ROM ROM S. Kamuro, et al., 64k DSA ROM, IEEE Journal of Solid-State Circuits, Vol.SC-15, No.2, pp , April S. Kamuro, et al., High Density CMOS Read Only Memories for a Handheld Electronics Language Translator, IEEE Transaction on Consumer Electronics, Vol.CE-27, No.4, pp , November S. Kamuro, et al., A 256k ROM Fabricated Using n-well CMOS Process Technology, IEEE Journal of Solid-State Circuits, Vol.SC-17, No.4, pp , August

25 DVD LSI TV LSI LSI LSI( ) 128 CPU LSI LSI LSI LSI NMOS 64 ROM CMOS 128 ROM a ()

26 NEC PC98 NEC PC98 PC98 PC

27 - 22 -

28 SEMATEC

29 - 24 -

30 15% GDP 3.4% 0.6% 4.2%0.9% (ITE- ) ( ITS) PC 2 PC Analog wavefirst digital wavesecond digital wave 3 TV VCRPCDigital consumernetwork IC 1 OS Wintel 2 MPU (SOC)

33 Figure of erit SOC Figure of erit 10 SOC SOC SOCDRAM LOGIC SOC ( ) ( 110 ( ) ( ) F2 ( ) LEEPL(Low Energy Beam Proximity Lithography) 13 EE

34 21 FRAM( )MRAM ( )

35 - 30 -

40 IT DRAM

41 15% ( )

43 LSI LSI 1998 Akademia

45 21 21 SOC ( ) (Selete) (STARC)2 STARC 11 Selete 700 STARC 140 (5 )

46 (IDM) ( ) LSI Micron(DRAM )TSMC( )Cisco( )C-Cube( ) PCPC NEC DRAM IBM MPU(Cell)

47 IC 1 FAB 2 SMICGSMC

48 21 DVD SeleteStarc

49 - 44 -

50 SEMATEC

51 - 46 -

52 - 47 -

53 - 48 -

54 3 1 90nm

55 - 50 -

56 - 51 -

57 - 52 -

58 - 53 -

59 - 54 -

61 60 NPI BTO/CTO ( EMSSCM IT

62 EMS EMS EMS / A DSL,FTTH) D WDM) GPSS PDA EMS

63 EMS Market EMS Market EMS EMS EMS EMS EMS Top Priority Core EMS Outsource Gap EMS EMS

64 DRAM,ASIC,Flash,LaserFiber Test/ HDD OS DataBase EMS Outsource CoreCompetency A. R&D EMS B. C. VCR,CD,DVD,HDD D. C EMS 1980, AMDHDD SeagateMaxtorWestern Digital DRAM Dell, Compaq, IBM Sun Micro Cisco Impact Motolora, Lucent, Nortel, Nokia, Ericsson EMS EMS EMS

65 EMS EMS EMS NPI SI EMS BTO/CTO EMS -EMS - EMS - -Risk - - NPI - - EMS NPI BTO/CTO

66 EMS 1. Q/C/D 2. R&D EMS IBM, ) 2) 3) Asset EMS EMS EMS IT

67 Reference

68 DRAM Mos Memory MOS ( CPU )

69 3 1 2 LSI LSI System-in-package EETIMS System-on-chip LSI LSI System-in-package LSI LSI CPU IP LSI LSI Technologies integrated on a chip LSI 20 (DRAM) FeRAM IC

70 Chemical sensors Issues in System-on-Chip IP 1 IP LSI Silicon MEMS microphon MEMS 0.1m LSI SoC vs SiP EETIMS System in a Package 3D System Integration Ezampl North Corporation LSI LSI LSI LSI

72 LSI LSI LSI TI LSI LSI LSI In LSI DRAM ( ) IP( )

73 LSI 3 LSI

74 System LSI System-in-Package

75 - 70 -

76 21 ( ) ( 110) LSI (3 )LSI SEMATECH CRPFocus Center Research Program Si

78 0.5V Si3N4 5V Flash (TFT)

79 600 LSI (110) (111) LSI O2 (100)Balanced CMOS (110) CMOS LSI CMOS 5 NANDNOR CMOS LSI LSI LSI

80 ( )

81 21 LSI (2 )

82 LSI 200mm m 1000 (100) MOS 910 MOS 1 25 kwh t CO2 ( ) (600 ) LSI ( 13 ) (

83 - 78 -

84 DRAM

86 16K 64M 16M CMP( ) 64M DRAM AMAT (64K ) (4M ) (64M )

87 - 82 -

88 - 83 -

89 Virtual Concept Real Structure

90 - 85 -

92 - 87 -

93 - 88 -

94 SEMATEC

95 1990 ( 10 ) WINTEL MPUDRAM 2000 ( ) i IT IT IT IP I ( ) ( )

96 VS 1990 IC ( ) ( LSI

97 LSI LSI LSI DRAM DRAM LSI LSI IP(Intellectual Property) IP LSI LSI 1 2 OS

98 OS OS WINTEL 1 ( ) ( )

99 - 94 -

100

101 - 96 -

102 - 97 -

103 ( ) ( )

104 - 99 -

105

106 1990 ( ) %

107

108 ( ) AT&TIBM IBM RCA

109 TI 1 1 RCA %

110

111 2 ( ) ( )

112

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114 TN ( ) 2 14 %

115

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118 20 Sherwin and Isenson,

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123

124

125 , De Solla Price,

126

127 p

128 De Solla Price, Derek J., Science since Babylon (Enlarged Edition), New Haven: Yale University Press,

129 Sherwin, Chalmers W., and Raymond S. Isenson, Project Hindsight: A Defense Department Study of the Utility of Research, Science, June 1967, pp

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ST 1 MOS MOS 1 1 2 8 1 CMOS CMOS 7mm3mm LSI 10 SSIS

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