1 -- 7 1 2008 9 MOS FT 1-1 1-2 1-3 1-4 c 2011 1/(17)
1 -- 7 -- 1 1--1 2008 9 1 1 1 1(a) VVS: Voltage ontrolled Voltage Source v in µ µ µ 1 µ 1 vin 1 + - v in 2 2 1 1 (a) VVS( ) (b) S( ) i in i in 2 2 1 vin 1 g m v in 2 2 1 1 i in + r m i in - (c) VS( ) (b) VS( ) 2 2 1 1 S: urrent ontrolled urrent Source VS: Voltage ontrolled urrent Source [S] VS: urrent ontrolled urrent Source [Ω] c 2011 2/(17)
1 -- 7 -- 1 1--2 2008 9 1 1 VVS V O V I V O = f (V I ) (1 1) 1 2(a) 1 2 V O V I V IL V OL 1 2(b) V I = V D + v sig v sig V O = f (V D + v sig ) = f (V D ) + f (V D ) v sig 1! + f (V D ) v2 sig 2! + f (V D ) + f (V D )v sig (1 2) V O V v sig V = f (V D ) (1 3) v = f (V D )v sig (1 4) (1 4) 1 1 VVS f (V D ) V D V D f (V D ) f (V D ) > 1 v v sig VVS c 2011 3/(17)
v sig V IL 1 2 V O V OL V O V O O V I O t O V I O t (a) (b) 1 2 Spice A 0 V D ( ) A 1 D c 2011 4/(17)
A c 2011 5/(17)
1 -- 7 -- 1 1--3 2008 9 MOS FT FT 1--3--1 1 3 n p 1 3 pnp npn 2 MOS FT I p n p I V I V V (a) pnp I n p n I V I V V (b) npn 1 3 pnp I = 0 na I O 10 2 V = V 0.6 V 2 mv/ W 1 µm I I I = α 0 I + I O (1 5) α 0 0.98 0.999 I O I c 2011 6/(17)
I [ma] I [ma] 10 8 6 4 10 8 6 4 10 8 6 4 40 30 20 2 0 I = 2mA 0 2 I = 10 0 A -1 0 5 10 15 V [V] V A 0 5 10 15 20 25 V [V] (a) I V (b) I V 1 4 npn I = I I (1 6) npn 1 4 1 4(a) I V V I V 1 4(b) I V 1 4(a) I V V A 1--3--2 pnp 1 5(a) r b W 50 500Ω I V I = I S (e V/VT 1) I S e V/VT (1 7) V T V T = kt/q q 1 1.6 10 19 k 1.38 10 23 J/K T [K] T = 300 K 27 V T 26 mv r e = 26 I [ma] [Ω] (1 8) r c 1 5(b) α α 0 r c I = 1 ma 5 50 MΩ c 2011 7/(17)
I i e i b V I D D I r O b i e r e r b r c r b (1- )r c i r b e (a) (b) T (c) T 1 5 1 5(c) T (1 5) (1 6) I α 0 I = I + I O = β 0 I + (1 + β 0 )I O 1 α 0 1 α 0 (1 9) β 0 = α 0 1 α 0 (1 10) β 0 50 1000 β 0 β 1--3--3 MOS FT V DS V DS V GS V GS I D I D S i 0 2 S G D S i 0 2 S G D p n+ n+ n p n+ n+ n D D G (G 1) S (G 2) G (G 1) S (G 2) (a) (b) 1 6 n MOS FT 1 6 MOS FT Metal-Oxide-Semiconductor Field-ffect Transistor MOS FT G c 2011 8/(17)
V GS V Th n I D V GS V Th D S I D ( I D = 2K V GS V Th V ) DS V DS V DS < V GS V Th (1 11) 2 3 V DS I D V DS I D = K(V GS V Th ) 2 V DS V GS V Th (1 12) 5 (1 12) K K = K 0 W L, K 0 = µ OX 2 (1 13) W L µ OX MOS W L K V Th ( ) V Th = V T0 + γ 2φ f + V S 2φ f (1 14) V T0 γ φ f MOS FT V Th V S = 0 0.5 1.5 V 1 4 V 0.5 4 mv/ K µa/v 2 µa /V 2 MOS FT V Th V GS = 0 MOS FT (1 12) I D = K(V GS V Th ) 2 (1 + λv DS ) (1 15) λ 0.05 0.1 1 V 1 7 1 8 g m r d g mb I D g m = = 2K(V GS V Th )(1 + λv DS ) (1 16) V GS r d = 1/ I D 1 = (1 17) V DS Kλ(V GS V Th ) 2 g mb = I D V S = γk(v GS V Th )(1 + λv DS ) 2φ f + V S (1 18) c 2011 9/(17)
I D [ A] 150 I D [ A] 150 V GS = 3V 100 100 V GS = 2.5V 50 50 V GS = 2V 0 0 1 2 3 V GS [V] V GS = 1.5V V GS = 0, 0.5V V GS = 1V 00 1 2 3 V DS [V] (a) I D V GS (V DS = 3V) (b) I D V DS 1 7 MOS FT D G v gs g m v gs r d g mb v sb v sb S 1 8 MOS FT p MOS FT 2SK p 2SJ 3 MOS FT S 1--3--4 1 1 9 d r e r c ω c r c α α = α 0 1 + jω ω α (1 19) ω α α 1 10 β c 2011 10/(17)
i e r e i e c d r b c c 1 9 T i b r b i b r e c c / (1- ) c d 1 10 T β = α 1 α = β 0 1 + jω ω β ω β = (1 α 0 )ω α ω α β 0 (1 20) (1 21) ω β β β = 1 f T f T 100 M 7 GHz f T 1 10 1 11 r π = r e 1 α, π = d, g m = α o r e (1 22) c 2011 11/(17)
i b r b c c r v b e c g m v b e 1 11 π 2 MOS FT MOS FT 1 12 gd gd D G gs v gs r d ds g m v gs S 1 12 MOS FT c 2011 12/(17)
1 -- 7 -- 1 1--4 2008 9 1--4--1 V I O β 0 S IO = I, S V = I, S β0 = I I O V β 0 IO=0 (1 23) 1 13 I V V R V I V = V R I 1 14 A I = 20 µa Q 2 R I V V I i b 1 13 i b ±15 µa 2 I 10 µa 30 µa Q 1 Q 3 I Q 2 I V 0 0.1 0.3 V V (sat) I (1 9) I = β 0 I + (1 + β 0 )I O S IO = 1+β 0 S V = 0 S β0 = I β 0 = 200 I = 1 ma c 2011 13/(17)
I A Q 3 40 30 Q 2 20 Q1 I = 10 A O 0 V V (sat) I I I 1 14 I O = 1 na 50 32 na I O = 31 na S IO I O /I 0.62% S /I = 0 S β0 β 0 /I = β 0 /β 0 β 0 β 0 100% I β 0 30% + 40% 1 15 1 16 R = R 1//R 2 + r b V = {R 2 /(R 1 + R 2 )}V V = R I + V + R {(1 + β 0 )I O + β 0 I } I I I = β 0(V V ) + (1 + β 0 )(R + R )I O R + (1 + β 0)R S IO = (1 + β 0)(R + R ) R + (1 + β 0)R β 0 S V = R + (1 + β 0)R S β0 = (V V )(R + R ) {R + (1 + β 0)R } 2 (1 24) (1 25) V = 6 V R 1 = 47 kω R 2 = 20 kω R = 3 kω c 2011 14/(17)
R1 R I V R 2 R 1 15 R I I +(1+ )I O R ' V I ' V ' R V 1 16 R = 1 kω β 0 = 200 V = 0.6 V r b = 500 Ω I O = 1 na I 1.11 ma S IO I O /I 0.040% S /I 8.4% S β0 β 0 /I 0.071 β 0 /β 0 1 13 β 0 I 1--4--2 MOS FT MOS FT K V Th 1 17 MOS FT S VTh = I D / V Th S K = I D / K I D = K(V GS V Th ) 2 V GS = V GG I D R S V GG = {R 2 /(R 1 + R 2 )}V DD I D = 1 2R 2 S { 1 ( 1 1 + 4KRS (V GG V Th ) ) } + 2(V GG V Th )R S K (1 26) V DD = 5 V R 1 = 1 MΩ R 2 = 750 kω R S = 1 kω K = 15 ma/v 2 V Th = 0.8 V I D 1.07 ma S VTh = (1/ 1 + 4KR S (V GG V Th ) 1)/R S 0.89 S K = [{1+2KR S (V GG V Th )}/ 1 + 4KR S (V GG V Th ) 1]/(2K 2 R 2 S ) 0.0079 V Th 2 mv/ 50 V Th = 0.1 V c 2011 15/(17)
R1 R D I D V DD R 2 R S 1 17 S VTh V Th /I D = 8.3% K 100% K = 15 ma/v 2 S K K/I D 11% R S 1 1 18 M A MOS FT M A V GS = 0 M A I RF = K A VT 2 I V DD M 0..n K M 0 V GS IRF V GS = K + V Th (1 27) V GS M 1 I O1 = I RF M 2 V DD M A K A I O1 I O2 I On I RF M 0 M 1 M 2 M n V GS 1 18 2 1 19 1 18 I V DD c 2011 16/(17)
I 0 = 0 M 2 V 0 V DD V 0 = I K1 + V Th = V Th + V Th K 2 K 2 (1 28) V DD M 1 K 1 I I 0 M 2 K 2 V 0 1 19 3 1 20 MOSFT I 0 = 0 I S I D V GS V GS = I K + V Th (1 29) V 0 V 0 = V 1 V GS = V 1 I/K V Th V Th V DD I 0 V 1 V GS I V0 1 20 c 2011 17/(17)