COPAL ELECTRONICS 32 (DP) DP INC 2 3 3 RH RL RWB 32 C S U/D INC U/D CS 2 2 DP7114 32 SOIC CMOS 2.5 V - 6.0 V / 10 kω 50 kω 100 kω TSSOP MSOP /BFR INC / U/D RH RoHS GND RWB RL CS VCC 2017 6 15 1 :
R = 2 = 10 k 4 = 50 k 5 = 100 k L = 4 = (NiPdAu) A = CAT5112V = I = ( ) Y = 1 M = 1-9, A, B, C O, N, D XXXX = No. 4 ABPN = ZI-10-GT3 ABPP = ZI-50-GT3 Y = 1 M = 1-9, A, B, C O, N, D P = A2 = R = 2 = 10 k 4 =50 k 5 = 100 k L = 4 = (NiPdAu) Y = 1 M = 1-9, A, B, C O, N, D XXX = No. 3 1. 2. POT 2
INC INC U/D U/D U/D U/D H CS L INC H L R H U/ D CS L INC H L R L R H R H R L R H V CC GND R WB R WB INC U/D CS R L R L R H R L V CC GND R H R L R H R L R WB R H R L 32 R H R L 31 32 1 3 INC U/D CS 5 INC CS CS L U/D INC INC H L INC H CS H INC L CS L CS H INC U/D 3
1. INC CS U/D High to Low Low High Wiper toward R H High to Low Low Low Wiper toward R L High Low to High X Store Wiper Position Low Low to High X No Store, Return to Standby X High X Standby 3. 2. V CC to GND -0.5 +7 V CS to GND -0.5 V CC +0.5 V INC to GND -0.5 V CC +0.5 V U/D to GND -0.5 V CC +0.5 V R H to GND -0.5 V CC +0.5 V R L to GND -0.5 V CC +0.5 V R WB to GND -0.5 V CC +0.5 V ( I ) -40 +85 +150-65 +150 (10s max) +300 3. Min Typ Max V ZAP ( 1) ESD MIL-STD-883, Test Method 3015 2000 V I LTH ( 1, 2) JEDEC Standard 17 100 ma T DR MIL-STD-883, Test Method 1008 100 Years N END MIL-STD-883, Test Method 1003 1,000,000 Stores 1. 2. -1 V V CC +1 V 100 ma 4
4. DC (V CC = +2.5 V +6 V) Min Typ Max V CC 2.5-6 V I CC1 V CC = 6 V, f = 1 MHz, I W = 0 - - 200 μa V CC = 6 V, f = 250 khz, I W = 0 - - 100 μa I CC2 Programming, V CC = 6 V - - 1000 μa V CC = 3 V - - 500 μa I SB1 ( 4) CS = VCC 0.3 V - 75 150 μa U/D, INC = VCC 0.3 V or GND Min Typ Max I IH (H ) V IN = V CC - - 10 μa I IL (L ) V IN = 0 V - - -10 μa V IH1 H (TTL) 4.5 V V CC 5.5 V 2 - V CC V V IL1 L (TTL) 0-0.8 V V IH2 H (CMOS) 2.5 V V CC 6 V V CC x 0.7 - V CC + 0.3 V L (CMOS) -0.3 - V CC x 0.2 V V IL2 Min Typ Max R POT -10 Device 10 kω -50 Device 50-00 Device 100 ±20 % V RH R H 0 V CC V V RL R L 0 V CC V 1 % INL I W 2 μa 0.5 1 LSB DNL I W 2 μa 0.25 0.5 LSB R OUT 0.05 V CC V WB 0.95 V CC, 1 Ω V CC = 5 V I OUT 0.05 V CC V WB 0.95 V CC, 3 ma V CC = 5 V TC RPOT 300 ppm/ TC RATIO 20 ppm/ C RH /C RL /C RW 8/8/25 pf f C Passive Attenuator, 10 kω 1.7 MHz V WB(SWING) I OUT 100 μa, V CC = 5 V 0.01V CC 0.99V CC 3. 4. -1 V V CC +1 V 100 ma 5. I W = 6. 5
5. AC V CC 2.5 V V CC 6 V 0.2 V CC to 0.7 V CC 10 ns 0.5 V CC 6. AC (V CC = +2.5 V +6.0 V, V H = V CC, V L = 0 V) Min Typ Max ( 7) t CI CS to INC Setup 100 - - ns t DI U/D to INC Setup 50 - - ns t ID U/D to INC Hold 100 - - ns t IL INC LOW Period 250 - - ns t IH INC HIGH Period 250 - - ns t IC INC Inactive to C S Inactive 1 - - μs t CPH CS Deselect Time (NO STORE) 100 - - ns t CPH CS Deselect Time (STORE) 10 - - ms t IW INC to VOUT Change - 1 5 μs t CYC INC Cycle Time 1 - - μs t R, t F ( 8) INC Input Rise and Fall Time - - 500 μs t PU, ( 8) Power-up to Wiper Stable - - 1 ms t WR Store Cycle - 5 10 ms 7. 25 8. ( 9) 4. AC 9. A.C. MI 6
SOIC 8, 150 mils (1) mm (2) JEDEC MS-012 7
TSSOP 8, 4.4x3 (1) mm (2) JEDEC MO-153 8
MSOP 8, 3x3 (1) mm (2) JEDEC MO-187 9
( DP 12) V 7112 I -10 -G T3 & T: & 3: 3,000/ V: SOIC Y: TSSOP Z: MSOP I: (-40 G: NiPdAu +85 ) -10: 10 k -50: 50 k -00: 100 k (注記13) 7. Orderable Part Number Resistance (k VI-10-GT3 10 VI-50-GT3 50 VI-00-GT3 100 YI-10-GT3 10 YI-50-GT3 50 YI-00-GT3 100 ZI-10-GT3 10 ZI-50-GT3 50 10. RoHS NiPdAu 11. 12. VI 10-GT3 (SOIC ) Package-Pins Lead Finish SOIC-8 NiPdAu TSSOP-8 NiPdAu MSOP-8 NiPdAu ( ) 10 k NiPdAu 13. 入手可能かどうかについては弊社までお問い合わせ下さい Typ. 10 & 3,000/ )