PowerPoint プレゼンテーション
|
|
|
- やすもり さかわ
- 5 years ago
- Views:
Transcription
1
2
3 1 45nm
4 * * H
5 MIRAI 3 Cu n+ n+ p+ p+ p n nmos pmos
6 ITRS k ITRS2001 ITRS2003 Low-k (nm) 4
7 5 Low-k k=2.0cu low-kcu 22 Low-k k Low-k2 MIRAI low-k Selete Cu MIRAI MIRAI k= k=2 k=2.0 8GPa MIRAI k= GPa
8 6 100 nm 50 nm TMCTS (tetramethyl-cyclotetra-siloxane) Cu Ta/ TaN) SiOC) Cu 100nm SiN CuTEM ~ 5 MV/ Oku, IEDM 2003
9 GPa) TMCTS (tetramethyl-cyclo-tetra-siloxane) TMCTS HMDS TMCTS HMDS 1) TMCTS CH 3 H CH3 Si CH 3 O Si O Si O H Si H 3 C O O O O Si O O O CH 3 O Si H O 3 C Si Si Si CH 3 H3C O H H O O CH 3 O O Si O Si O Si O Si O Si O O O O O O (%) k TMCTS (mj/m 2 ) k TMCTS 2) 3) Low-k Oku, IEDM
10 Low-k DVS-BCB (di-vinyl-siloxane bis benzo-cyclo-butene) DVB (di-iso-propenyl-benzene) CH 3 Si CH O 3 CH 3 CH 3 H 3 C Si Si O Si H 3 C CH 3 CH 3 CH 3 CH 3 Si O Si CH 3 CH 3 CH 3 CH 3 Si O Si CH 3 CH 3 (DVS-BCB) (DVB) 300 mm 2 MV/cm (k=2.8) (Modulus) 10 %5.7 GPa Kawahara, IEDM
11 Low-k VS k 9 E (GPa) MIRAI Disorder (MMW) MIRAI MIRAI Disorder Disorder DVS-BCB/DVB+TMB 4.0 Ew=30 E-k Disorder(LMW) k Low-kk
12 in-situ CMP 10
13 11 p / p 0 r 30 0 in-situ (nm) Low-k TMCTS Negoro et al, SSDM k=
14 12 Low-k k= Low-k Low-k/ k CMP 300 mm 2005CMP SELETE Low-k
15 13 DDS
16 14
17 DDS) DNA NNI)(
18 DDS 16 DDS DDS Passive targeting Liposomes Polymer Micelles Polymer conjugates Active targeting Monoclonal Antibody/Antigen Ligand/Receptor Y. Matsumura; DDS, 16, 401 (2001) E. Forssen etal. ; ADDR, 29, 249 (1998)
19 17
20 18
21 19
22 20
23 21 S. Lee, J.B. Macauley: Genzyme Corporation (1993)
24 22 Ref. Bevilacqua MP, Seed, B, et. al. (1989) Science 243, in vitro DDSin vivo : DDS Neu5Aca2 3Galβ1 4GlcNAc- 3 Fucα1
25 23
26 24 (A) (B) (C)
27 25
28 26 HO HO HO HO OH AcNH HO HO 2 C O HO O OH O OH O O O OH AcNH NH O OH O S H
29 27
30 28
31 29
32 30
33 31
34 32
35 33
36 34
37 DDS 35
38 36
39 37
40 DDS 38 DDS
41 39
42 40
43 41
44 42
45
46 44
47
48 46 KO GG KO
49 What is Glycoproteome 47
50 48 H GlycoGene / GG Project? (Structural Glycomics / SG project) H
51 13% ( ) 1% (GG) 33% 18% GG 35%
52 IgA
53 51
54 52 Gal β1 GlcNAc β1 3 3 J.B.C. 277:12802 J.B.C. 277:47724 Core 1 structure GalNAc Core 3 structure Ser/Thr
55 53 Gn-TV N- G4, G5, G26 G34 K12 ST2, ST3 SP5 F3, F6 etc. G8, G10 K2, K3, K5, K8, K11 O10 L4 SP3 etc.
56 54 in situ hybridization GalNAcβ1-3GlcNAc-R β3galnac-t2germ line cells
57 55 GG SG Functional Glycoproteomics) IgA Sweet Medicine (Glyco-Based Medicine)
58 Our plan GTase Library MS n ESI MALDI 56
59 57
60 58
61 59
62 60
63 61
64 PV News Vol22 No3 March 2003, May W 62
65 63 W 500 PVTEC 400 Cost (x10000 JPY) year 56% 66%
66 /kwh 30 /kwh <<>> ( ) 23 /kwh 14 /kwh << >> () 7 /kwh [] PV PV SHS() VLSPV NEDO
67 kw ( ~ 0.5 %) 64W 1000 kw ( 0.8
68 66 / NEDO HP Device processing Passivation, Electrode Printing
69 67 p- i- n- 1 m p- i- n- 12 a-si:h 7~ 8 % a-si:h/µc-si:h ~10% 12%
70 68 V V + p i n p i (µc-si) n 0.3 µm ( ) ZnO ~ 2 µm typ. 15%) 10 (typ. 0.1nm/s) 2.5nm/s 9.5 glass/ type-u/ a-si p-i-n (0.35 µm)/ µc-si p-i-n (4 µm)/ ZnO/ Ag Current density (ma/cm 2 ) J sc : 12.5 ma/cm 2 V oc : 1.35 V FF η : 0.74 : 12.4% Voltage (V) Area: 1 cm 2 13
71 69 ) ma/cm2 J[mA/cm2] 16 Initial 14 Stabilized % V[V] 10% p/i 8.5% 9.2 % (V)
72 70 + p i n p/i VHF Cathode SiH 4 SiH3 d Substrate Anode Mesh V exhaust SiH2 SiH2 VHF SiH3
73 71 10 Current density (ma/cm 2 ) Area : 0.25 cm 2 d i : 2.3 µm R d : 2.3 nm/s J sc : 23.7 ma/cm 2 V oc FF η : V : 0.73 : 9.13% Voltage (V)
74 72 VHF < 1 Torr 10Torr) SiH3 SiH4 + H2 H SiH3 MHI
75 73 1MWp 6500 m panels 10 6 kwh /year 0.8 % of total(aist) 4.82GWp 0.5% of total(jp)
76 74 2% 4kW10kW
77 75
78
79 77
80 78
81 79 ~
82 80
83 nature vol. 424 p August 7,
84 82
85 83
86 84
87 85
88 86
89 87 ()
90 88
91 89
92 90
93 91
研修コーナー
l l l l l l l l l l l α α β l µ l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l
ｎｓｇ０２－１３／ｋｙ０４５０５９３０１６０００３３２１０
φ φ φ φ κ κ α α μ μ α α μ χ et al Neurosci. Res. Trpv J Physiol μ μ α α α β in vivo β β β β β β β β in vitro β γ μ δ μδ δ δ α θ α θ α In Biomechanics at Micro- and Nanoscale Levels, Volume I W W v W
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 1-1 1-1 -1-1 -2-1 -3-1 10 11-4-1-5-1-6-1-7-1 1-1 2-1 3-1 4-1 5-1 1-3 1-3 1-3 1-6 1-6 1-7
スライド 1
High-k & Selete 1 2 * * NEC * # * # # 3 4 10 Si/Diamond, Si/SiC, Si/AlOx, Si Si,,, CN SoC, 2007 2010 2013 2016 2019 Materials Selection CZ Defectengineered SOI: Bonded, SIMOX, SOI Emerging Materials Various
untitled
SPring-83 22(2010)730 MBE PLD MBE 0.002% PLD p Π n p n PF PF = S 2 S =V/ΔT V: [V] ΔT: [K] S[V/K], T[K], σ[s/m] TeBi 2 Te 3 (Bi,Se) 2 Te 3 (n-type) Ar KrF Ar gas 2. A. 3. c-si a-si InP GaAs 1g (μm) PV(W/g
スライド 1
STRJ WS: March 9, 2006, 0.35µm 0.8µm 0.3µm STRJ WS: March 9, 2006, 2 0.35µm Lot-to-Lot, Wafer-to-Wafer, Die-to-Die(D2D) D2D 0.8µm (WID: Within Die) D2D vs. WID 0.3µm D2Dvs. WID STRJ WS: March 9, 2006,
LC LC ACQUITY UPLC H-Class ACQUITY UPLC CSH C mm 1.7 µm : THF/ 2/8 A 1 mm / 4/6 THF 2 mg/ml THF/ 2 THF 2 ACQUITY UPLC CSH C 18
ACQUITY UPLC H-Class/QDa Nihon Waters K.K., Tokyo, Japan TAG 1 3 1 1 8 9 TAG TAG TAG TAG TAG UV UV APCI ESI MS TAG Sn-2 Sn-3 Sn-1 C18: ACQUITY UPLC CSH C 18 ACQUITY UPLC H-Class 1. ACQUITY QDa TAG ACQUITY
2
2 3 4 5 6 7 0 10 20 30 40 50 60 70 9 10 11 12 13 14 15 86.0% 14.0% 79.5% 20.5% 60 111 16 .. 17 ** p
hν 688 358 979 309 308.123 Hz α α α α α α No.37 に示す Ti Sa レーザーで実現 術移転も成功し 図 9 に示すよ うに 2 時間は連続測定が可能な システムを実現した Advanced S o l i d S t a t e L a s e r s 2016, JTu2A.26 1-3. 今後は光周波 数比計測装置としてさらに改良 を加えていくとともに
1 911 9001030 9:00 A B C D E F G H I J K L M 1A0900 1B0900 1C0900 1D0900 1E0900 1F0900 1G0900 1H0900 1I0900 1J0900 1K0900 1L0900 1M0900 9:15 1A0915 1B0915 1C0915 1D0915 1E0915 1F0915 1G0915 1H0915 1I0915
122
121 122 123 1 124 2 3 125 4 5 126 7 127 8 9 128 17301 10 1. 2. 3. 4. 5. 11 129 12 13 130 211822 14 15 131 16 17 132 5 19 133 20 21 134 22 23 135 24 25 136 26 137 1. 2. 3. 4. 5. 5 28 1. 5 2. 3. 3 29 138
( ) ( ) 20 11 11-13 15 20 21 ( ) 114cm 100cm 85cm () () 11 18 19 19-25 26 ( 1 ) 1 2 10 ( ) () 11 16 19 21 24-13 20 3 20 ( ) ( ) 14 15 19 20 23 29 13 20 4/15 600 400 5 7 1 8 5 7 20 3 1999 1000 100 86
研究成果報告書
EL EL 17% 1.5 (F. Li, et al. Org. Elect., Vol. 8, 635, 2007 ) (S.Hore, et al., Sol. Energy Mater. Sol. Cells, pp. Vol. 90, 1176, 2006) (C. Haase et al., Proc. of SPIE, Vol. 6645, 66450W, 2007) (T. Fukuda
Mｏｔｔ散乱によるParity対称性の破れを検証
Mott Parity P2 Mott target Mott Parity Parity Γ = 1 0 0 0 0 1 0 0 0 0 1 0 0 0 0 1 t P P ),,, ( 3 2 1 0 1 γ γ γ γ γ γ ν ν µ µ = = Γ 1 : : : Γ P P P P x x P ν ν µ µ vector axial vector ν ν µ µ γ γ Γ ν γ
,,., (,, SiO 2, Si-N, ),,,,,.,.,,, (Schottky). [ ].,..,.,., 1 m µm 10., 10 5, [ ] (6N-103)..,.,. [ ] 1. (,, ) :,.,,.., (HF),.
![,,., (,, SiO 2, Si-N, ),,,,,.,.,,, (Schottky). [ ].,..,.,., 1 m µm 10., 10 5, [ ] (6N-103)..,.,. [ ] 1. (,, ) :,.,,.., (HF),.](/thumbs/102/154256451.jpg ",,., (,, SiO 2, Si-N, ),,,,,.,.,,, (Schottky). [ ].,..,.,., 1 m µm 10., 10 5, [ ] (6N-103)..,.,. [ ] 1. (,, ) :,.,,.., (HF),.")
17 2 2.1,,., (,, SiO 2, Si-N, ),,,,,.,.,,, (Schottky). [ ].,..,.,., 1 m 3 0.1 µm 10., 10 5, 10 7. [ ] (6N-103)..,.,. [ ] 1. (,, ) :,.,,.., (HF),. 18 2,,.,,. 2.,,,.,,. 2.1. 19 2.1.1 1. 1, (Schottky),,,.
untitled
NJU7704/05 C-MOS ( ) ±1.00.9µA DSP SOT-23-5 SC88A 2 DSP NJU7704/05F NJU7704/05F3 ±1.0 0.9µA typ ( ) 1.5 6.0(0.1 step) ( C ) ( ) Active "L" : NJU770****A Active "H" : NJU770****B Nch : NJU7704 C-MOS : C-MOS
Triple 2:1 High-Speed Video Multiplexer (Rev. C
www.tij.co.jp OPA3875 µ ± +5V µ RGB Channel OPA3875 OPA3875 (Patented) RGB Out SELECT ENABLE RED OUT GREEN OUT BLUE OUT 1 R G B RGB Channel 1 R1 G1 B1 X 1 Off Off Off 5V Channel Select EN OPA875 OPA4872
スライド 1
Front End Processes FEP WG - - NEC 1 ITRS2006 update 2 ITRS vs. 2-1 FET 2-2 Source Drain Extension 2-3 Si-Silicide 2-4 2-5 1 , FEP Front End Processes Starting Materials: FEP Si,, SOI SOI: Si on Insulator,
untitled
3-1 ( sit ) (stead state vibratio) (trasiet vibratio) sit(a)w s ( W s ) W / g C (b) sit ( + s ) ( + s ) c + W + sit W s si t + s + c + si t (3.1) si t (3.1) a C W b sit(respose) () 3- acost+ bsit a sit+
0.45m1.00m 1.00m 1.00m 0.33m 0.33m 0.33m 0.45m 1.00m 2
24 11 10 24 12 10 30 1 0.45m1.00m 1.00m 1.00m 0.33m 0.33m 0.33m 0.45m 1.00m 2 23% 29% 71% 67% 6% 4% n=1525 n=1137 6% +6% -4% -2% 21% 30% 5% 35% 6% 6% 11% 40% 37% 36 172 166 371 213 226 177 54 382 704 216
10 117 5 1 121841 4 15 12 7 27 12 6 31856 8 21 1983-2 - 321899 12 21656 2 45 9 2 131816 4 91812 11 20 1887 461971 11 3 2 161703 11 13 98 3 16201700-3 - 2 35 6 7 8 9 12 13 12 481973 12 2 571982 161703 11
税関分析25 年の進歩
25 1 25 40 27 25 27 32 25 CeEDTA 10) 11 1) Fe Al Zn EDTA 2) 12) n IR400 2N BT EDTA 14) e 15) 16) 17) 18) 3) Zn Cu 4) Mn 5) 6) 7) 8) 9 13) 2 24) X 56),57) 58) 25) 59) 60) X 61) X X 26) X 27),28),29) 62)
Microsoft PowerPoint - 14.菅谷修正.pptx
InGaAs/系量子ドット太陽電池の作製 革新デバイスチーム 菅谷武芳 電子 バンド3:伝導帯 E3 E3 E 正孔 バンド:中間バンド 量子ドット超格子 ミニバンド 量子ドットの井戸型 ポテンシャル バンド:価電子帯 量子ドット太陽電池のバンド図 6%を超える理想的な量子ドット太陽 電池実現には E3として１ 9eVが必要 量子ドット超格子太陽電池 理論上 変換効率6%以上 集光 を採用 MBE
untitled
50cm 2500mm 300mm 15 CCD 15 100 1 2 3 4 23 SORA Kwak SeungJo 1 1.1 1995 20 2015 6 18 1931 1 2 3 2 ˆ 300mm 2500mm ˆ 2 1.2 WASP 1: 15 2048 2048 CCD 200mm 70 13 WASP 8 1.3 50cm 1 1: CCD 2: 1.4 MOST MOST 15
ｎｓｇ０４－２８／ｋｙ２０８６８４３５６１０００４３０７７
δ!!! μ μ μ γ UBE3A Ube3a Ube3a δ !!!! α α α α α α α α α α μ μ α β α β β !!!!!!!! μ! Suncus murinus μ Ω! π μ Ω in vivo! μ μ μ!!! ! in situ! in vivo δ δ !!!!!!!!!! ! in vivo Orexin-Arch Orexin-Arch !!
untitled
1 Contents 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 2 1. 2. 3 3. 1 2 4 4. () () 5 4. 6 5. 7 6. 8 7. 1. 2. ( ) 3. 8 9 1. 1. 2. ( 2. (( ) ) 3. 3. 4. 4. 5. (PMV) ( ) 5. (PMV)( ) 6. 7. 20 1. 2. ( ) 3.
Unidirectional Measurement Current-Shunt Monitor with Dual Comparators (Rev. B
www.tij.co.jp INA206 INA207 INA208 INA206-INA208 INA206-INA208 V S 1 14 V IN+ V S 1 10 V IN+ OUT CMP1 IN /0.6V REF 2 3 1.2V REF 13 12 V IN 1.2V REF OUT OUT CMP1 IN+ 2 3 9 8 V IN CMP1 OUT CMP1 IN+ 4 11
untitled
27.2.9 TOF-SIMS SIMS TOF-SIMS SIMS Mass Spectrometer ABCDE + ABC+ DE + Primary Ions: 1 12 ions/cm 2 Molecular Fragmentation Region ABCDE ABCDE 1 15 atoms/cm 2 Molecular Desorption Region Why TOF-SIMS?
untitled
Kw 1-12 1-13 Kw van t Hoff 0 0 0 H S d ln K H ln K = + = RT R d(1/ T ) R ln KW 1/T H 0 /R H 0 = 51.0 kj mol -1 HCl H + + Cl - H2O H + + OH - [] [H + ] [OH - ]=10-14 M 2 25 OH - x OH - [OH - ]=x [H + ]
http://www.ns.kogakuin.ac.jp/~ft13389/lecture/physics1a2b/ pdf I 1 1 1.1 ( ) 1. 30 m µm 2. 20 cm km 3. 10 m 2 cm 2 4. 5 cm 3 km 3 5. 1 6. 1 7. 1 1.2 ( ) 1. 1 m + 10 cm 2. 1 hr + 6400 sec 3. 3.0 10 5 kg
平成18年3月期 第1四半期財務・業績の概況
1 17630 16 341752 16 1 17630 17331 16630 17630 17331 16630 2,479,568 2,498,800 19,231 2,556,709 1,522,201 1,506,047 16,153 1,629,884 1,875,510 1,903,828 28,318 1,986,491 795,000 814,800 19,800 854,800
51505agj.PDF
Type No. 2002 7 3 ******** 1.... 2 2.... 3 3.... 7 4. I/O... 9 5.... 11 6.... 12 7.... 16 8.... 16 9.... 16 10.... 17 11.... 18 CORPORATION Page 1/18 1. min. -20max. 70 min. -20max. 70 20 2 5 8 1 83.0
µµ InGaAs/GaAs PIN InGaAs PbS/PbSe InSb InAs/InSb MCT (HgCdTe)
1001 µµ 1.... 2 2.... 7 3.... 9 4. InGaAs/GaAs PIN... 10 5. InGaAs... 17 6. PbS/PbSe... 18 7. InSb... 22 8. InAs/InSb... 23 9. MCT (HgCdTe)... 25 10.... 28 11.... 29 12. (Si)... 30 13.... 33 14.... 37
untitled
(a) (b) (c) (d) Wunderlich 2.5.1 = = =90 2 1 (hkl) {hkl} [hkl] L tan 2θ = r L nλ = 2dsinθ dhkl ( ) = 1 2 2 2 h k l + + a b c c l=2 l=1 l=0 Polanyi nλ = I sinφ I: B A a 110 B c 110 b b 110 µ a 110
物理予稿01-
http://www.riken.jp/lab/dri/newpro/ 1 7 11 00 11 30 8 11 30 12 00 10 12 00 12 30 12 12 30 12 40 12 40 13 40 15 13 40 14 15 16 14 15 14 20 19 14 20 14 40 20 14 40 15 00 22 15 00 15 20 24 15 20 15 40 26
c c SSIS10 10 10 1998 2001 SSIS 2001 LSI 2001 MIRAI NECASKA SELETE 21 5ISSCC LSI 2004 2004SSIS PR 60 70
Encore SSIS 10 c c SSIS10 10 10 1998 2001 SSIS 2001 LSI 2001 MIRAI NECASKA SELETE 21 5ISSCC LSI 2004 2004SSIS PR 60 70 SSIS NOSIDE PR SSIS SSIS PR 2000 5SSIS SSIS 1 2001 5 8 3 2004 SSIS 1 2 SSIS 24 SSISPR
MP-AES ICP-QQQ Agilent 5100 ICP-OES Agilent 5100 (SVDV) ICP-OES (DSC) 1 5100 SVDV ICP-OES VistaChip II CCD Agilent 7900 ICP-MS 7700 / 10 7900 ICP-MS ICP-MS FTIR Agilent 7900 ICP-MS Agilent Cary 7000 (UMS)
SPring8菅野印刷.PDF
20021219Spring-8 Ah/kg Ah/dm 3 Li -3.01 540 3860 2090 Na -2.71 970 1160 1140 Al -1.66 2690 2980 8100 Zn -0.76 7140 820 5800 Fe -0.44 7850 960 7500 Cd -0.40 8650 480 4100 Pb -0.13 11340 260 2900 H 2 0
- i -
- i - - ii - 1 2 3 CO2SOxNOx Economy (Energy) (Environment) CO2SOxNOx Energy CO2,NOX,SOX CO2,NOX,SOX Environment Economy Economy (Energy) (Environment)3-1 - - 2 - Co2 / - 3-2 20 + + 4 16 39 50% 74% 123%
untitled
/Si FET /Si FET Improvement of tunnel FET performance using narrow bandgap semiconductor silicide Improvement /Si hetero-structure of tunnel FET performance source electrode using narrow bandgap semiconductor
2
復刻版 2 2 1 1 2 4 47..................................... 4 48............................. 5................................ 5 5................................... 9 48............................... 9
untitled
117 118 119 120 121 ab ab 1 122 123 124 125 / a 124 128.9 125.2 128.9 b 113 117.9 114.2 117.9 a b 97 101.9 98.2 101.9 99 103.9 100.2 103.9 62 66.9 63.2 66.9 57 61.9 58.2 61.9 102 106.9 103.2 106.9 102
2 / 102
1 / 102 2 / 102 ... 5... 21... 21... 21... 22... 23... 23... 23... 29... 29... 34... 39... 39... 40... 53... 59... 59... 59... 60... 60... 64... 65... 68... 74... 75... 78... 84... 84... 84... 85... 86...
pc910l0nsz_j
PC90L0NSZ0F PC90L0NSZ0F µ µ µ PC90L PC90L Date Sep.. 00 SHARP Corporation 7 NC Anode Cathode NC 7 GND V O (Open collector) V E (Enable) V CC H H L L H H H L H L L H L: (0) H: () PC90L0NSZ0F PC90L0YSZ0F
4 1 Ampère 4 2 Ampere 31
4. 2 2 Coulomb 2 2 2 ( ) electricity 2 30 4 1 Ampère 4 2 Ampere 31 NS 2 Fleming 4 3 B I r 4 1 0 1.257 10-2 Gm/A µ 0I B = 2πr 4 1 32 4 4 A A A A 4 4 10 9 1 2 12 13 14 4 1 16 4 1 CH 2 =CH 2 28.0313 28 2
2 ID POS 1... 1 2... 2 2.1 ID POS... 2 2.2... 3 3... 5 3.1... 5 3.2... 6 3.2.1... 6 3.2.2... 7 3.3... 7 3.3.1... 7 3.3.2... 8 3.3.3... 8 3.4... 9 4... 11 4.1... 11 4.2... 15 4.3... 27 5... 35... 36...
１３２０Ｍ／１６１３２０Ｍ
" # $ %! θθ v m g y v θ O v α x! O x y x α x y y " v # v sinα $ & v cosα ' v cosα v sinα ( v cosα % v sinα " g # gsinθ $ g sinθ ' g ( gsinθ ) g sinθ % gcosθ & g cosθ * gcosθ! g cosθ xy y L v g x xy L α
Microsoft PowerPoint - 21.齋修正.pptx
薄膜シリコン太陽電池用光閉じ込め技術の開発 先端産業プロセス 低コスト化チーム齋均 発電効率 5%( 接合 ) J SC = 5 ma/cm c-s:h 単接合 ( 膜厚 ~ m) で30 ma/cm 光閉じ込めによる c-s:hの高電流化が必須 c-s:h で 30 ma/cm テクスチャ無しで膜厚 5 m 相当 光マネジメントで実現 a-s:h c-s:h Buffer BSR Glass TCO
Donald Carl J. Choi, β ( )
:: α β γ 200612296 20 10 17 1 3 2 α 3 2.1................................... 3 2.2................................... 4 2.3....................................... 6 2.4.......................................
1. 1
1. 1 2. 1 3. 2,500 584 23.4 2 4. 584 10.82 21.93 67.31859 2 41.6 56.3 3 3 5 141 6 137 7 111 4 20 37.3 9 34.61019 26.4 5 4 6 7 5 8 9 6 10 1 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 20 21 10 1 1 12 2 2 13
LTC 自己給電絶縁型コンパレータ
AC 120V TECCOR 4008L4 OR EUIVALENT NEUTRAL 2N2222 HEATER 25Ω 150Ω 1k 1N4004 2.5k 5W 5.6V R1 680k 390Ω 100µF LE 47k C1 0.01µF ZC ZC COMPARISON > R = R O e B (1/T 1/T O ) B = 3807 1µF THERM 30k YSI 44008
まえがき
JAAS0012006 1 -------------------------------------------------------------------------------------------------------- 1 2 --------------------------------------------------------------------------------------------------------
2
Rb Rb Rb :10256010 2 3 1 5 1.1....................................... 5 1.2............................................. 5 1.3........................................ 6 2 7 2.1.........................................
64 3 g=9.85 m/s 2 g=9.791 m/s 2 36, km ( ) 1 () 2 () m/s : : a) b) kg/m kg/m k
63 3 Section 3.1 g 3.1 3.1: : 64 3 g=9.85 m/s 2 g=9.791 m/s 2 36, km ( ) 1 () 2 () 3 9.8 m/s 2 3.2 3.2: : a) b) 5 15 4 1 1. 1 3 14. 1 3 kg/m 3 2 3.3 1 3 5.8 1 3 kg/m 3 3 2.65 1 3 kg/m 3 4 6 m 3.1. 65 5
untitled
1... 1 1....3 1-1...3 1-1-1...3 1-1-2...5 1-2...7 1-2-1...7 1-2-2...8 1-3... 10 1-3-1... 10 1-3-2... 11 2... 13 2.... 15 2-1... 15 2-2... 15 3.... 16 3-1... 16 3-1-1... 16 3-1-2... 19 3-2... 21 4.... 24
日本医科大学医学会雑誌第8巻第1号
Xenopus laevis in situ μ μ Xenopus laevis Xenopus laevis Xenopus laevis UGT1A1 UGT1A1 IL28B KRAS UGT1A1 UGT1A128 UGT UGT1A1 UGT1A128 UGT1A1 286 UGT1A1 UGT1A1 28 6 UGT UGT UGT1A128 UGT IL28B UGT1A1
(1) (2)
3 3.1 3.1.1 3.1.2 (1) (2) 3.1.3 3-3.1.3.1 3.1.3.1 1 2 3.1.4 3.23.4 NATM 1980-3.1.4.1-3.1.4.2 NATM 20 1) NATM No.1235, 1983. 2) No.A-84-511984. -3.1.4.1 NATM -3.1.4.2 NATM Vp Vp 23/2882% 1983 : 0 A i X
日本目録規則1987年版改訂2版第2章図書改定案
2.0.1 2.0.2 2.0.3 2.0.4 2.0.5 2.0.6 2.1.1 2.1.2 2.1.3 2.1.4 2.1.5 2.2.1 2.2.2 2.2.3 2.2.4 2.4.1 2.4.2 2.4.3 2.4.4 2.5.1 2.5.2 2.5.3 2.5.4 2.6.1 2.6.2 2.6.3 2.6.4 2.6.5 ISSN 2.6.6 2.6.7 2.7.1 2.7.2 2.7.3
1 9 10 10 21 25 28 38 38 41 45 48 56 57 77 77 77 78 96 97 98 102 105 114 116 117 117 118 118 118 121 122 124 1 2 3 5 11 18 kwh 12,000 10,000 8,000 6,000 4,000 2,000 0 1955 1960 1965 1970 1975 1980 1985
Untitled art 3
2004 5 What s Inside 1 2 3 4 6 9 11 12 Visit our site at www.jccc-chi.org MAY 2004 NEWS CHICAGO 2 MAY 2004 NEWS CHICAGO 3 4 NEWS CHICAGO MAY 2004 MAY 2004 NEWS CHICAGO 5 6 NEWS CHICAGO MAY 2004 MAY 2004
untitled
, Kaoru ARIYAMA 10 17N, Na, Mg,Al,Si,P,S,Cl,K,Ca,Fe,Cu,Zn,Se,Br,Rb Sr 14r2 0.9617 Tricholoma matsutake,,, JAS ICP-OESICP-MS 2ICP-OES ICP-MS,, Tricholoma matsutake -24- 1 7 2006 70 13 8 5 2,, 2007,, 10
158 A (3) X X (X-raystressmeasurement) X X 10μm (4) X X (neutron stress measurement) X (5) (magnetostriction) (magnetostriction stress measurem
A 1) A.1 (point-by-point measurement) (full-field measurement) A.1 A.2 A.1.1 (1) (electric resistance strain meter) 0.2ο120mm 1 10 6 (2) 2 2 (extensometer) 157 158 A (3) X X (X-raystressmeasurement) X
光合成におけるエネルギー生産について
CO 2 CO 2 RuBisCO phytochromobilin Pr Pfr CO 2 1 CO2 a b b CHO a a - H+ H+ e - e - Mn Yz e - Q B P680 Q A Mn Yz P680 Q A Q B e ē - e - Mn Yz P680 Q A Q B Mn e - Yz P680 e - Q A Q B H 2 O Mn Yz e - P680
untitled
ORYZA CERAMIDE -PTPCDP8TP20CD -WSPWSP8 -LL0.8 -PCPC8PC20 -WSPCWSPC8 -LCLC0.8 Ver.13.0HS ORYZA CERAMIDE Ver.13.0HS 1. 2. 20 NMR 4 ( 1) 1 Ver.13.0HS HO CH 2 OH O O OH OH OH C CH CH H 2 NH C O R C H C H (CH
シンポジウム 報告書_5.PDF
... 2... 2... 2... 2... 2... 3... 3... 4... 6... 6... 6... 10... 10... 13... 13... 15... 17... 18... 21... 22 23... 23... 23... 24... 28... 30... 32 1 2 2 30 3 4 5 6 biodiversity 7 4 8 9 TV 10 NHK 11 12
untitled
1 / 37 5-4 6.1 1 2 / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 2 1 3 / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 3 4 / 37 1Tbits/cm 2 HD FePt FePt 110nm
From Evans Application Notes
3 From Evans Application Notes http://www.eaglabs.com From Evans Application Notes http://www.eaglabs.com XPS AES ISS SSIMS ATR-IR 1-10keV µ 1 V() r = kx 2 = 2π µν x mm 1 2 µ= m + m 1 2 1 k ν = OSC 2
[制度名]
![[制度名]](/thumbs/50/26121081.jpg "[制度名]")
[] 2002 CO2 H4 H5 H6 H7 H8 H9 H10 H11 H12 H13 ( ) (10 ) ( ) 39 290 350 420 420 452 443 525 456 405 3357 39 290 350 420 420 452 443 525 456 405 3357 ( ) 10 7 183 105 55 10 14 9 20 1.NEDO 1 1.1NEDO 1 1.2
II Karel Švadlenka * [1] 1.1* 5 23 m d2 x dt 2 = cdx kx + mg dt. c, g, k, m 1.2* u = au + bv v = cu + dv v u a, b, c, d R
![II Karel Švadlenka * [1] 1.1* 5 23 m d2 x dt 2 = cdx kx + mg dt. c, g, k, m 1.2* u = au + bv v = cu + dv v u a, b, c, d R](/thumbs/95/125540821.jpg "II Karel Švadlenka * [1] 1.1* 5 23 m d2 x dt 2 = cdx kx + mg dt. c, g, k, m 1.2* u = au + bv v = cu + dv v u a, b, c, d R")
II Karel Švadlenka 2018 5 26 * [1] 1.1* 5 23 m d2 x dt 2 = cdx kx + mg dt. c, g, k, m 1.2* 5 23 1 u = au + bv v = cu + dv v u a, b, c, d R 1.3 14 14 60% 1.4 5 23 a, b R a 2 4b < 0 λ 2 + aλ + b = 0 λ =
1 1 1 1-1 1 1-9 1-3 1-1 13-17 -3 6-4 6 3 3-1 35 3-37 3-3 38 4 4-1 39 4- Fe C TEM 41 4-3 C TEM 44 4-4 Fe TEM 46 4-5 5 4-6 5 5 51 6 5 1 1-1 1991 1,1 multiwall nanotube 1993 singlewall nanotube ( 1,) sp 7.4eV
Microsoft Word - 章末問題
1906 R n m 1 = =1 1 R R= 8h ICP s p s HeNeArXe 1 ns 1 1 1 1 1 17 NaCl 1.3 nm 10nm 3s CuAuAg NaCl CaF - - HeNeAr 1.7(b) 2 2 2d = a + a = 2a d = 2a 2 1 1 N = 8 + 6 = 4 8 2 4 4 2a 3 4 π N πr 3 3 4 ρ = = =
参考資料５ 農薬評価書 メタアルデヒド（食品安全委員会資料）
1 3 3 4 5. 6 1. 6 2. 6 3. 6 4. 6 5. 6 6. 6 7. 6. 7 1. 7 2. 8 (1) 8 (2) 9 (3) 9 (4) 10 (5) 10 3. 11 (1) 11 (2) 11 (3) 11 (4) 12 4. 12 (1) 12 (2) 12 (3) 13 5. 13 6. 13 7. 14 8. 15 9. 16 10. 16 (1) 90 16-1
(1.2) T D = 0 T = D = 30 kn 1.2 (1.4) 2F W = 0 F = W/2 = 300 kn/2 = 150 kn 1.3 (1.9) R = W 1 + W 2 = = 1100 N. (1.9) W 2 b W 1 a = 0
1 1 1.1 1.) T D = T = D = kn 1. 1.4) F W = F = W/ = kn/ = 15 kn 1. 1.9) R = W 1 + W = 6 + 5 = 11 N. 1.9) W b W 1 a = a = W /W 1 )b = 5/6) = 5 cm 1.4 AB AC P 1, P x, y x, y y x 1.4.) P sin 6 + P 1 sin 45
