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1 1 / / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 2 1
2 3 / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 3 4 / 37 1Tbits/cm 2 HD FePt FePt 110nm FePt 310nm 10 FePt FePt g/hr FePt 100g/hr 4 2
3 5 / 37 (Au, Ag, Cu) AuAgCu 110nm Au Ag 210nm 510nm 10 Au 10% 10 AuAg 100g/hr Au Ag 120g/hr 800g/hr 5 6 / 37 FePt I. Matsui, J. Nanoparticle Res. 8 (3-4): 429 (2006) FePt P (a) FePtTEM 1nmFePt (b) 20nm Size distribution Size distribution Particle size (nm) 6 Particle size (nm) 3
![[koe] 12 8 4 FePt 5347 Hc FePt Fe X Pt -X Fe Pt 4 0 30 40 50 60 70](/docs-images/83/87570570/images/4-2.jpg "80 x (FePt) 20 16 12 8 XRD intensity [au] Intensity FePt 3nm Ag L1")
4 7 / 37 P T. Iwaki, et al., J. Appl. Phys., 94, 6807 (2003) (< 100mg/h) (> 100g/h) N 2 N 2 Pt(acac) 2 Fe(acac) Max 10atm 500ml / min 200 Max 10atm PG FePt FePt + 2 Fe 3+ Pt 2+ EtGL FePt () FePt 10nm 7 100g/h 8 / 37 FePt (Hc) H c [koe] FePt 5347 Hc FePt Fe X Pt -X Fe Pt x (FePt) XRD intensity [au] Intensity FePt 3nm Ag L1 0 FePt(111) 580 Ag As made FePt Ag FePt FePt P F. Iskandar, et al., Nano Lett., 5(7), 1525 (2005) FePt Pt5d 8 4
5 9 / 37 Au Au Frequency / % % diameter / nm 4nm P D p =2.6nm 2nm wt % 100g / hr 9 10 / 37 Absorbance UV-VIS 2nm D P =2.6nm 10 5 cm 300 ºC ITO 8nm 520nm P Wavelength / nm 10 5
6 11 / 37 AgNO 3 () () Ag P nm 17.5% 1.3% () Ag Ag Ag 800g/hr 50wt% Ag cm 3.4cm 5 nm 20 nm / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 12 6
7 13 / 37 DVD CdSe/ZnSGaN 110nm CdSe GaN 25nm 610nm 10 GaN 15% 10 GaN 10% 100g/hr CdSe 10g/hr * 13 * 14 / 37 PDP ZnSX Y 2 O 3 X 110nm Y 2 O 3 Eu 13nm 10 Y 2 O 3 Eu 15% 10 Y 2 O 3 Eu 100g/hr Y 2 O 3 Eu 50g/hr 14 7
8 15 / 37 ZnO 110nm ZnO 210nm 10 ZnO 22% 10 ZnO STO 100g/hr ZnO 47g/hr / 37 : 2030 mg/hr 100 g/hr P g/hr A TOPO P(=O)(nOctyl) 3 10 nm B Cd(CH 3 ) 2 Se P(nButyl) 3 P(=O)(nOctyl)3 CdSeTEM 10 nm ZnO/SiO 2 HAADF-STEM 16 8
![17 / 37 Intensity [a.u.] CdSe P127-129 M.](/docs-images/83/87570570/images/9-0.jpg "Kawa, et al., J. Nanoparticle. Res.")
![, 5, 81 (2003) Particle Diameter [nm] 4.](/docs-images/83/87570570/images/9-1.jpg "7 3.3 2.")
9 17 / 37 Intensity [a.u.] CdSe P M. Kawa, et al., J. Nanoparticle. Res., 5, 81 (2003) Particle Diameter [nm] nm :500600nm :25nm Wavelength [nm] / 37 CVD13GaN P CVDGaN MOCVDTMG MFC 7.9 nm 15% NH 3 MFC N 2 ~ 1100 TMG Azuma, et al., Chem. Vapor Deposition, 10, 11 (2004) GaN GaN 18 9
10 19 / 37 CVD13GaN CVD CVDGaN P Shimada, et al., Jpn. J. Appl. Phys., 45(1A), submitted 328 (2006) 5.2 ~ 7.3 nm 18.3 ~ 28.0 % CVD CVD GaN GaN 19 GaN370 nm 20 / 37 Xia et al., Adv. Mater., 13, 1579 (2001) SP SASP μm SASP () ` 1μm 0.11μm nm 100nm 100g/hr P nm Y 2 O 3 Eu TEM SASPSP 20 10
11 / 37 P m 13nm Y 2 O 3 :Eu 30~50g/h Y 2 O 3,Eu 2 O 3, NaCl / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 22 11
12 23 / 37 (SiO 2 ) SiO 2 110nm 510nm SiO % 100g/hr 750g/hr / 37 SiO 2 P SiTEOS,TMOS NH 3,amine 2,2 -bipyridine SiO 2 SiO
13 25 / 37 SiO 2 680nm SiO2 20nm 20nm 100nm 100nm 100nm Dp=8.3nm Dp=18.2nm Dp=45.6nm max 750g/hr () 0.1wt% P () 10 MMA IPA 2-butanone Acetyl- acetone Cyclo- hexane 6.3nm 7.0wt% (580nm) % (ex MMA) 26 / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 26 13
14 27 / nm 3nm 1 TiO g/hr 100g/hr / 37 Mixing part P Reactor Heater Cooling Pump in-line filter Metal Salt Solution Distilled Water :3nm 100g/h : 7nm TiO 2 YVO
15 29 / 37 P nm CeO 2 C 5 COOH / 37 1 (1) FePt AuAg (2) CdSe ZnSXY 2 O 3 X X : ZnO (3) SiO 2 (4) (5) 30 15
16 31 / 37 (a) (b) (c) (d) 10nm 40 nm 50nm 50nm (e) (f) (g) (h) 20nm 50nm 50nm 20nm PECVD (a, b, c), ES-CVD (d, e, f), CVD (g, h) (a) FePt; 2 nm,(b) GaN; 5 nm, (c) SiO 2 ; 9 nm, (d) SiO 2 ; 20 nm, (e) TiO 2 ; 10 nm, (f) ZrO 2 ; 15 nm, (g) GaN; 8 nm, and (h) BaTiO 3 ; 27 nm / 37 Abdullah, et al., J. Ceram. Soc. Jpn. 113, 97 (2005); J. Non-Cryst. Solids., 351, 697 (2005) P (PCS) (Y 2 O 3 :Eu) ( ) & 32 16
17 33 / 37 (a) (b) (c) (d) 100nm 20nm 20nm 20nm (e) (f) (g) (h) 10nm 20nm 100nm 20nm 5nm (i) (j) (a-f), (g-j) 30nm 100nm (a) Y 2 O 3 -ZrO 2 ; 10 nm, (b)batio 3 ; 32 nm, (c)(ba 0.5,Sr 0.5 )TiO 3 ; 20 nm, (d)zns:mn 2+ ;40 nm, (e)zns; 6 nm, (f)nio; 9 nm, (g) NiO; 20 nm, (h)in 2 O 3 :Sn; 10 nm, (i)y 2 O 3 :Eu 3+ ; 10 nm, (j) Ni; 20 nm / 37 (k) (l) (m) (n) 2nm 20nm 100nm 10nm 10nm (o) (p) (q) (r) 20nm 5 nm 100nm 20 nm 300nm (s) (t) - (k, l), (m,n), (o, p), (q), (r), (s, t) 4nm 10nm (k) GaN; 20 nm, (l) SiO 2 ; 18 nm, (m) FePt; 4 nm, (n) FePtAg; 4nm,(o) InSb; 25 nm, (p) CdSe; 5 nm, (q) Y 2 O 3 :Eu; 30 nm,(r) BaTiO 3 ; 23 nm, 34 (s) Au; 3 nm, (t) Ag; 3 nm 17
18 35 / / 37 FePt Au Ag Cu Au Si FePt 13 CdSe ZnO InSb SiO 2 BST Au EL LED 36 18
19 37 / Nano Letters Iskandar, F., et. al., In Situ Production of Spherical Silica Particles Containing Self-Organized Mesopores Nano Lett., 1(5), (2001) Science Highlight paper Advanced Materials 3 Xia, B., et. al., Novel Route to Nanoparticle Synthesis by Salt-Assisted Aerosol Decomposition Adv. Mater., 13(20), (2001). Langmuir 2 Song, D. K., et. al., Changes in the Shape and Mobility of Colloidal Gold Nanorods with Electrospray and Differential Mobility Analyzer Methods Langmuir, 21(23), (2005)
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スライド 1
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213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造 ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい
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