10 nm SThM Fig.1 AFM 6) AFM 7) Fig.1 AFM 0.1 N/m 100 pn 10 nn 8) SThM STM AFM RTD Resistance Temperature Device SNOM Scanning Near-field Optical Micro
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1 Netsu Sokutei Microscale Thermal Measurement by Scanning Thermal Microscopy Osamu Nakabeppu (Received November 20, 2000; Accepted December 11, 2000) The Scanning Thermal Microscopy (SThM) has been developed since 1986 by adding a temperature detective function with various techniques to the Scanning Tunnel Microscopy (STM) or the Atomic Force Microscopy (AFM). The SThM can measure temperature and thermal properties distribution with spatial resolution of less than 100 nm. The remarkable improvement in the spatial resolution for thermal measurements will enable direct thermal observation of submicron structures, such as micro-electric devices, ICs, composite materials, and local catalytic reactions. This review introduces the present state and features of various types of SThM, and then gives a detailed description of a promising SThM with a thermocouple cantilever probe. Furthermore, an active method for the accurate real temperature measurement with high spatial resolution is introduced. SThM Scanning Thermal Microscopy SPM Scanning Probe Microscope 10 nm 1) 2) 3) SThM STM Scanning Tunnel Microscope AFM Atomic Force Microscope SThM SPM STM 4) 1982 AFM 5) 1986 SPM 2001 The Japan Society of Calorimetry and Thermal Analysis. 18
2 10 nm SThM Fig.1 AFM 6) AFM 7) Fig.1 AFM 0.1 N/m 100 pn 10 nn 8) SThM STM AFM RTD Resistance Temperature Device SNOM Scanning Near-field Optical Microscopy SThM SThM SThM SPM 1986 Scanning Thermal Profiler 9) '89 STM 10) '92 11) '93 12) '94 Wollaston RTD 13) '95 14) RTD '97 15) '98 16) SThM RTD Table 1 STM 1nm 10) 11) φ 75 µm 12) 2 1 µm DC nm 1 khz 19
3 Table 1 SThM 1 nm 1 ms 10 mk (STM) TC 10 nm 10 ms(v) 2mK (v) TC 100 nm (AFM) 300 ms (v) 20 mk (v) TC 500 nm (a) 50 ms (a) 100 mk (v) RTD RTD (AFM) RTD 1 µm (a) mk (AFM) 300 nm(v) 100 ms (v) nm (a) 1ms (a) 0.1 K (a) (AFM) 50 nm 1 ms --- (SNOM --- (v) (a) Fig.2 RTD (a) (b) RTD Resistance Temperature Device SThM SPM Fig.2(a) Wollaston 5 10 µm Fig.2(b) Si 3N 4 17) 1 µm 14) AFM Si 3N Hz Fig.3 16) 20
4 Fig.3 Fig.4 SThM SNOM SThM AFM 20 khz SPM SNOM 18,19) Scanning Nearfield Optical Microscopy 10 nm SNOM Fig.4 50 nm VLSI 15) SNOM SThM SThM SThM AFM SThM Fig.5 batch fabrication 12) K φ 75 µm 25 µm Fig.5(a) 10 nm 1 10 SThM 21
5 Fig.5 20) V Si 3N 4 Fig.5(b) 30 Hz 21,22) φ 25 µm 0.1 N HCl U nm Fig.5(c) 5 10 µm 1 mm 1 30 N m µm 10 µm 23) Fig.5(d) Si 3N µm nm 10 nm, 7.5 µvk µvk 1 17 µv K µv K 1 17 µvk 1 14 µv K 1 SThM 22
6 Fig.5(e, f) 24,25) Fig.5(f) 500 nm Si 3N nm 50 nm 40 nm SThM AFM SII SPM3700 SPA300 Digital Instrument Nano- Scope III AFM AFM 10 5 Torr DC SThM 21,26,27) Fig.6 Fig.6 f / Hz Fig.7 Gain µm 100 W m 1 K 1 10 nm 50 % 1nm WK WK WK Torr 10 6 WK 1 1 µm 100 nm 26) 10 nm 23
7 Fig.8 Si (a) (b) (c) 10 nm R t C m R c C c Si 3N 4 Fig % 17 % 62 % 1Hz 100 Hz 100 Hz SThM Fig.9 Mesfet Fig.8 27) (a) (b) 10 4 Torr (c) 100 Hz 200 Hz % 0.2 % Fig.9 MESFET Metal Semiconductor Field Effect Transistor 20) 0.2 Hz DC
8 Fig.10 MOSFET Fig.11 CFRP Fig.10 MOSFET Metal Oxide Semiconductor Field Effect Transistor 27) 0.1 Hz 112 Hz 2 MOSFET Fig.9 Fig.11 CFRP 21) 100 nm Fig.12 GaAs 1.3 µm 23) 25
9 Fig nm RTD SThM SThM 10 nm 10 nm SThM Fig.13 28) SThM null method Fig.13 1mm Fig W m 1 K 1 26
10 T m / K T s / K Fig.15 Fig K 25 % 1Wm 1 K 1 35 % 1Wm 1 K 1 10 Hz Si 0.5 µm SiO 2 Fig µm SThM 10 SPM SThM SThM SThM SThM 27
11 SThM SThM 1) S. Kondo, K. Ogasawara, and K. Hinode, J. Appl. Phys. 79[2], pp (1996). 2) Y. S. Ju and K. E. Goodson, ASME-DSC-Vol.59, Microelectro-mechanical Systems, pp (1996). 3) R. Ostermeir, K. Brunner, G. Abstreiter, and W. Weber, IEEE Trans. Electron Devices. 39[2], pp (1992). 4) G. Binnig, H. Rohrer, Ch. Gerber, and E. Weibel, Phys. Rev. Lett. 49, 57 (1982). 5) G. Binnig, C. F. Quate, and Ch. Gerber, Phys. Rev. Lett. 56, 930 (1986). 6),, (1992). 7),, (1995). 8) U. Dammer, M. Hegner, D. Anselmetti, P. Wagner, M. Dreier, W. Huber, and H. J. Güntherodt, Biophys J 70, pp (1996). 9) C. C. Williams and H. K. Wickramasinghe, Appl. Phys. Lett 49[23], pp (1986). 10) J. M. R. Weaver, L. M. Walpita, and H. K. Wickramasinghe, Nature 342, pp (1989). 11) M. Nonnenmacher and H. K. Wickramasinghe, Appl. Phys. Lett 61[2], pp (1992). 12) A. Majumdar, J. P. Carrejo, and J. Lai, "Thermal imaging using the atomic force microscope", Appl. Phys. Lett. 62, pp (1993). 13) R. J. Pylkki, P. J. Moyer, and P. W. West, Jpn. J. Appl. Phys. 33, pp (1994). 14) O. Nakabeppu, M. Chandrachood, Y. Wu, J. Lai, and A. Majumdar, Appl. Phys. Lett. 66, pp (1995). 15) K. E. Goodson and M. Asheghi, Microscale Thermal Transport 1[3], pp (1997). 16) J. Varesi and A. Majumdar, Appl. Phys. Lett. 72, pp (1998). 17) Digital Instsurument ( Thermo Micoscope ( TA Insturuments ( 18) D. W. Pohl, V. Ch. Fischer, and U. T. Durig, J. Microscopy 152, p.853 (1988). 19), 65, 2 (1996). 20) A. Majumdar, J. Lai, M. Chandrachood, O. Nakabeppu, Y. Wu, and Z. Shi, Rev. Sci. Instrum. 66, pp (1995). 21),,,, B 64, pp (1998). 22) O. Nakabeppu, M. Igeta, and K. Hijikata, Microscale Thermophysical Engineering 1, pp (1997). 23) K. Luo, Z. Shi, J. Lai, and A. Majumdar, Appl. Phys. Lett. 68, pp (1996). 24) Y. Suzuki, Jpn. J. Appl. Phys. 35, pp.l352-l354 (1996). 25) G. Mills, H. Zhou, A. Midha, L. Donaldson, and J. M. R. Weaver, Appl. Phys. Lett. 72, pp (1998). 26) K. Luo, Z. Shi, J. Varesi, and A. Majumdar, J. Vac. Sci. Technol. B 15, pp (1997). 27),, M. Chandrachood, J. Lai, and A. Majumdar, B 62, pp (1996). 28) O. Nakabeppu, M. Igeta, and T. Inoue, Thermal Science & Engineering 7, pp (1999). SThM 100 nm SThM SThM Osamu Nakabeppu, Tokyo Institute of Technology Faculty of Engineering, TEL , FAX , onakabep@ mes.titech.ac.jp SThM D.I.Y. 28
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