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1 Drain Voltage (mv) Gate Voltage (V)
![Vds [V] 0.2 0.1 0.0-0.](/docs-images/97/132902988/images/2-0.jpg "1-0.2-10 -8-6 -4-2 0 Vgs")
2 Vds [V] Vgs [V]
3
4 (LSI)
5
6
7 Fe Catalyst Fe Catalyst Carbon nanotube 1~2 nm
8 ~10nm 0.34nm
9 Scanning Tunneling Microscope (STM) A IBM
10 A E I II III U U = 0 x 1 x 2 x h2 2m d 2 ϕ +U(x) = Eϕ T 2 dx exp 2 h x 2 x 1 2m(E U)dx
11 I II III U ϕ = Aexp ±i h x x 0 2m(E U) dx T = ϕ(iii) ϕ(i) 2 E U = 0 x 1 x 2 x T exp 2 h x 2 x 1 2m(E U)dx L 1 >L 2 T 1 << T 2 STM L 1A T 10 L 1 L 2
12
13 Chirality of Carbon Nanotube (n, 0) (0,0) (1,0) (2,0) (3,0) (4,0) (5,0) (6,0) (7,0) (1,1) (2,1) (3,1) (4,1) (5,1) (6,1) (7,1) (n,n) (2,2) (3,2) (4,2) (5,2) (6,2) armchair zigzag chiral Metal Metal Semi Con. Metal Semi Con. (3,3) (4,3) (5,3) (6,3) (4,4) (5,4)
14
15
16 Chemical Vapor Deposition (CVD) C Fe C 2 H 5 OH Fe
17 Fe Fe Particle TEM Image of SWCNT Fe CH 4 Gas C C Fe Fe Fe 900C/30min. (Fe)
18 Carbon Nanotube Growth from Fe Particles RT Heating CVD Fe Fe 3 O 4 Fe 2 O 3 Fe 3 O 4 Fe-C CNT FeO Fe 3 C Fe-C
19
20 Position Controlled Growth of Carbon Nanotube using Patterned Catalyst 1) Photo Resist Patterning P.R. Si Sub. 2) Fe Deposition Fe Si Sub. 3) Lift Off Fe Fe Catalyst Si Sub. 4) Carbon Nanotube Growth Carbon Nanotube CH 4 Gas Si Sub. 900C/30min. Fe Catalyst ~10%
21 Effect of Electric Field on Direction Control of Carbon Nanotube V A CH 4 Gas Catalyst Catalyst Fe Catalyst Fe Catalyst SiO 2 Si Sub. Carbon Nanotube Carbon nanotube Catalyst Catalyst ~20% SiO 2 Si Sub. Effect of Van der Waals Force between Carbon Nanotube & SiO 2 Sub.
22 Effect of Applied Field 0V +20V 0V Growth without Electric field 0V Electric field effect Growth Source 10V Drain -10V Gate -40V
23 + - DC Bias Current Current Time C 2 H 5 OH H 2 CNT 900 Electrode Catalyst Time 900 Current Time
24 1nm
25 Peapod
26 82 peapod Gd +3 EELS Gd Gd K.Hirahara et al., Phys.Rev.Lett. 85, 5384 (2000). K. Suenaga et al., Science 290, 2280 (2000). K.Hirahara et al., Phys.Rev.Lett. 85, 5384 (2000) Ti Ce Gd 92 +6
27 STS - Gd@C 82 Peapod J. Lee et al. Nature (2002) Gd@C 82
28 Peapod FET FET C 60, C 78, C 90 Gd@C 82, Ti 80, etc. Source Peapod Drain Ti/Au SiO 2 (100 nm) + p -Si sub. Hight / nm Length / nm Gate Ti/Au
29 Various Type Peapod FET and its I D -V GS Characteristics I D (A) Ce 2 C 80 -P GdC 82 -P Ti 2 C 80 -P C 60 -P 23 K V DS = 1 mv V GS (V) Ce Ti Gd@C C SWNT FET p Ti 80 FET p / n
30 Various Organic Molecular Doping into Carbon Nanotube CNT CNT Structure was determined by Spring-8.
31
32 MOSFET Metal Oxide Silicon Field Effect Transistor I D : L : Ci : μ ν : Z V G1 Z I Dsat = μ n C i (V G -V T ) 2 2L g m = di Dsat dv G = Z μ n C i (V G -V T ) L V G2 V G3 V G4 L μ n C i Z V D I D I D p L Z p μ p C i p V T V G V T V G
33 Delft University
34 CNT (25,0): 1.99 nm Si GaAs InAs (19,0): 1.51 nm (13,0): 1.03 nm Eg (ev) (cm 2 /Vs) 65,000 35,500 15,000 e: 1,500 h: 450 e: 8,500 h: 400 e: 33,000 h: 460 V. Perebeinos et al. (IBM) PRL 94, (2005) S. M. Sze, Physics of Semiconductor Devices 2nd Ed. Electron Drift Velocity (x10 7 cm/s) Carrier Velocity (10 7 cm/s) 4 CNT 3 2 GaAs Si F (kv/cm) (G. Pennington et al. SISPAD 02, 279 (2002))
35 p type Al or Ti Ti SWNT SiO 2 (15nm) g m Si-MOSFET 2 CNT-FET Si-pMOS Lg nm t ox nm V th (V) I on ma/mm) g m ( S/ m)
36 High-k CNT-FET Stanford Univ. A. Javey et al. Nature Mat. 1, 241, ZrO 2 (k ~ 25) : 8 nm SiO 2 (k ~ 3): 0.9 nm p type C G I ON /I OFF ~ 10 4, g m = 6000 μs/μm, s-factor = 70 mv
37 n type Carbon Nanotube FET Logic n FET
38 I D I D p V T V G V T V G
39 FET IBM 52MHz Delft p 5 Hz Stanford 220Hz IBM 52MHz
40 IBM p type n type CNT φ=1.4nm
41 D IBM e h Drain Bias 0 10V(3 sec.) Repeat 190 sec. Integration S
42 D(E) D(E) D(E) E E 1 E 2 E 3 D(E) E E 1 E 2 E 3 D(E) E E 1 E 2 E 3 E
43 1 L x Ly D(E) = 2 dn x dn y dn z de 1 L x L y L z E = h 2 8π 2 m k 2 = h 2 8π 2 m (k 2 x + k 2 y + k 2 z ) L z D(E) = 2 dn x de 1 L x (1) E = h 2 2 k x 8π 2 m = h 2 n x π 8π 2 m L x 2 = n 2 xh 2 2 8mL x L x k x = n xπ L x n x = 2L x 2mE h dn x de = L x h 2m dn x de = L x E h (2) 2m E (1)(2) D(E) = 4 m h 2E 1 2
44 D(E) L x D(E) = 4 m h 2E 1 2 E 1, E 2 E 1 E D(E) D(E) = g s h m 2 E E n ( ) 1 2 E 1 E 2 E 3 E
45 Scanning Tunneling Spectroscopy (STS) J t J t A C B A V V dj t /dv D(E) C B A V
46 Scanning Tunneling Spectroscopy(STS) J t V C B A V Jt Tip E f C B A dj t /dv V J t E f 0 D(E) T(E,V )de D(E) : T(E,V): D(E) C B A V dj t dv D(E) T(E,V ) D(E)
47 STS J t A V
48 (0,0 ) (6,0 ) (5,0 ) (4,0 ) (3,0 ) (2,0 ) (1,0 ) (1,1 ) (7,0 ) (2,1 ) (3,1 ) (4,1 ) (6,1 ) (5,1 ) (7,1 ) (5,2 ) (6,2 ) (4,3 ) (4,4 ) (5,4 ) (5,3 ) (6,3 ) (5,5 ) (2,2 ) (3,2 ) (4,2 ) (3,3 ) Zigzag Type (n,0) Armchair Type (n,n) 1/3 Metalic 2/3 Semiconductor
49 I G 2e 2 h V V
50 E F D(E F ) = g s h m 2 E F E n ( ) 1 2 D(E) E = 1 2 mv 2 v(e F ) = v F = ( ) 2E m = 2 E E F n m 1 2 E 1 E 2 E E F 3 E n I = e D(E F ) v F ev = e g s h m 2 E F E n ( ) E E F n m ( ) 1 2 g ev = s e 2 h V G = I V = g s e2 h = 2e2 h
51 n D(E) I = i= n i=1 2e 2 h V = n 2e2 h V 2e 2 G = I V = 2e2 h h G 3 2 E F E 1 E 2 E 3 E 1 E 1 E 2 E 3 V
52
53 1 R. M. Westervelt Science Nature
54 h2 2m d 2 ϕ +U(x)ϕ = Eϕ 2 dx U= = E 3 ϕ = Csin(kx) = Csin( nπ L x) E 2 k = nπ L = 0 L E 1 x E 3 = 9 8m h 2 L x 2 E n = h2 k 2 2m = h 2 nπ 8π 2 m L 2 = n 2 h 2 8mL 2 E 2 = 4 8m E 1 = 1 8m h 2 L x 2 h 2 L x 2
55 5nm E 3 e GaAs 0 L GaAs E 2 e E 1 GaAlAs GaAlAs x GaAs E 3 e E 2 GaAs A GaAs E 1 GaAs
56 Discrete Energy Level m ΔE Q m m Drain SiO 2 4μm Source
57 Discrete Energy Level K V G =0.98V ΔE Q Drain Source V D =0.4mV SiO 2 4μm Drain Voltage (mv) Drain 4.2 m Source
58 n n+1 ΔE ΔE L E n = hν n = hv F λ n E n +1 λ n +1 E n +1 = hν n +1 = hv F λ n +1 E n λ n ΔE ΔE = E n +1 E n = hv F λ n +1 hv F λ n L = hv F (n +1) 2L hv Fn 2L = hv F 2L
59 Resonant Tunneling of of Hole through Quantum Level in in Carbon Nanotube Negative Conductance Drain Current-Drain Voltage K V G =0.98V V D =0.4mV ΔE Q Discrete Energy Level Drain SiO 2 L 4μm Source ν Drain Voltage (mv) h :Plank s Constant F :Fermi Velocity L :Length of CNT between Tunneling Barriers e :Elementary Charge ΔV D ΔE L = 4.2( μm) ΔE = hν F 2L 1.4μm L : 4.5μm 1 ΔΕ 3
60 35 30 Resonant Tunneling of 1.4μm CNT through Quantum Well 8.6K V G =-3.2V ΔE Q Discrete Energy Level L 25 Drain SiO 2 ΔV Δ 1.4μm D E Q Source 20 V D : V D =1.2mV Drain Voltage (mv) 1.2mV 0.4mV = 3 L =1.4 μm ( ) ΔE ΔV D =1.2mV
61 W. Liang Harvard Univ. CNT 2LeV c /h ν F = 2 ΔE Q Discrete Energy Level L = 530nm Vg(V) Vg(V) T = 4K L = 200nm Drain SiO 2 4μm Source L = 220nm Vg(V)
62 Single Electron Transistor V G e - e - V D C t C G V G C t V D C Ec = e 2 / 2C E F e - X e/c E F ΔE = (Q-e) 2 /2C - Q 2 /2C = Ec ΔE > 0 Ec > ev e/2c > V Small V D e/2c > V > - e/2c
63 I D E F e - X e/c E F -e/2c e/2c V D Small V D e/2c > V > - e/2c e - I D E F e/c E F -e/2c e/2c V D e/2c < V Large V D V < - e/2c
64 V G e - I D E F e - X e/c E F -e/2c e/2c V D V D I D e/c G Small V D e - I D n = 0 n = 1 E F e/c E F -e/2c V G Gate V G e/2c V D Small V D
65 10K I D -e/2c e/2c V D 0 1 e/2c > V > - e/2c I D e/c G n = 0 n = 1 V G Tunnel Capacitance C 1 = C 2 = 4 x F Gate Capacitance C G = 1 x F
66 1) kt << Ec = e 2 /2C C 2) R T >> h / e 2 = R Q = 26k kt = 26meV at 300K Ec = e 2 /2C = 80meV at C = F r = 10nm 800meV at C = F r = 1nm r E F kt e - X e/c E F -e/2c I D e/2c V D
67 Simulated Charactersitics of Single Electron Tranasistor at 10K & 300K 10K 300K Tunnel Capacitance C 1 = C 2 = 4 x F Gate Capacitance C G = 1 x F C Σ = C 1 + C 2 + C G = 1.8 x F Tunnel Capacitance C 1 = C 2 = 5 x F Gate Capacitance C G = 8 x F
68 4 8.6K Coulomb Diamond Characteristics of of Hole in in Entire Carbon Nanotube Island of of 4.5μm Drain Voltage (mv) n n-1 n-2 n-3 n-4 n-5 n-6 n-7 Drain Current (A) Drain h + Island Source Gate Voltage (V)
![3. Vds [V] SET AFM FIB Voltage pulse 0.2 0.1 0.0-0.1 Drain SiO 2 Si Sub. -0.](/docs-images/97/132902988/images/69-0.jpg "2-10 -8-6 -4-2 0 Vgs [V] + Back Gate AFM CNT Metal coated AFM tip Source ΔV G [V]")
![Ids1[A] 4.0n 3.0n 2.0n 1.0n l =22 nm 0.0-5.0n -10.0n -10-5 0 Vgs[V] 2.6 2.4 2.2 2.0 1.](/docs-images/97/132902988/images/69-1.jpg "8 1.6 1.4 12 14 16 18 20 22 24 Dot length [nm] L = 15 nm CNT 20.0n 15.0n 10.0n 5.0n 0.")
69 3. Vds [V] SET AFM FIB Voltage pulse Drain SiO 2 Si Sub Vgs [V] + Back Gate AFM CNT Metal coated AFM tip Source ΔV G [V] Ids1[A] 4.0n 3.0n 2.0n 1.0n l =22 nm n -10.0n Vgs[V] Dot length [nm] L = 15 nm CNT 20.0n 15.0n 10.0n 5.0n nm/15nm nicks Ids2[A]
70 CNT Single Electron Transistor by AFM Nicking 20K Source e - Gate Drain I D e/c G Island V e 2C 1 n = 0 n = 1 n n -e 2 n 0 n n e 2 Q 0 =C g U g V G -e 2C1
71 CNT Single Electron Transistor by AFM Twisting Source e - Gate Drain 300K Island V e 2C 1 n n -e 2 n 0 n n e 2 Q 0 =C g U g -e 2C1
72
73 (A) ~4V
74 Carbon Nanotube Rope
75 Lightbulbs with Carbon Nanotube Filaments
76 Vds [V] Vgs [V]
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213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造 ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい
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