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1 ( ) ( ) 1
2 MEMS : MEMS ( +13% / ) 2
3 3
4 ISFET ph,co 2 (K.Shimada, M.Esashi, Med.& Biol.Eng.& Comp.,18 (1980) p.741) (M.Esashi T.Matsuo, Supplement to the J.J.AP.,44 (1975), ) 4
5 5
6 (Y.Matsumoto, S.Shoji, M.Esashi, 22nd Conference on Solid State Devices and Materials (1990) 701) 6
7 (1000V) (DC~10GHz) LSI MEMS (MEMS )( ) 7
8 (NHK, ) (T.Tajima (NHK), M.Esashi et.al., Microelectronic Engineering, (2003) 508) 8
9 SiO 2 LPCVD (650 ) 125nm Si poly-si (1000 ) (3MPa) ( m / min) Si (M.Kirsten, B.Wenk (Fraunhofer-Inst.), F.Ericson, J.A.Schweitz (Uppsala Univ.) Thin Solid Films, 259 (1995) pp ) ST Microelectronics 9
10 (J.C.Eloy, SEMICON Japan 2010)
11 (M.Nagao et.al.,sae World Congress, Detroit, (2004)) 11
12 2 (IDG-1000) ( ) (J.Seeger, M.Lim and S.Nasiri : Technical Digest Solid-State Sensor, Actuator and Microsystems Workshop, Hilton Head Island, 61 (2010) ) 12
13 1.5mm 7.4 ( ) ( ) MESAG-100 (Micro Electrostatically Suspended Accelerometer Gyro) ( ) 13 (T.Murakoshi, Jpn. J. Appli. Phys., 42, Part1 No.4B (2003) p.2468)
14 ( ) 14
15 (T.Katsumata et.al., Optical MEMS 97) (K. Totsu et.al., Transducers 03 (2003) ) 15
16 / ~10 18 g 400 m 0.2 m f 0 =669.5Hz Q=1325 NdFeB (10 m ) (Magnetic Resonance Force detective Microscope (MRFM)) (T.Ono and M.Esashi, Rev. of Scientific Instruments, 74 (2003) 5141) 16
17 MRFM 17
18 Optical image 10 m (MRFM) (ESR) DPPH (diphenylpicrylhydrazil))( ) 18
19 (1 ) (NEC) (S.Tohyama, Optical Engineering, 45 (2006) p ) 19
20 ( NEC) 20
21 64 64 ( ) (T.Shimizu ( ), SEMI Technology Symposium (STS) 2010) 21
22 4 22 SAW (J.Kuypers, APCOT2006 p.293)
23 SAW (S.Hashimoto, Proceedings of the 24th Sensor Symposium, (2007), p.267) 23
24 SAW (A.Randles, 2008 IEEE International Ultrasonic Symposium (2008) p.1124) 24
25 (N.Asada et.al., IEEE Trans. on Magnetics 30 (1994)) 3 ( 33 1 (2009) 41) 25
26 Concept PZT CVD pixels (SVGA) 40 cm (H.Matsuo, Y.Kawai and M.Esashi : Jap. J. Appl. Phys, 49 (2010) 04DL19 ) (E.Kawasaki, H.Yamada and H.Hamanaka : IDW 09 (2009) 1345 ) 26
27 ( ) 27
28 ( ) 1999 Star Wars : Episode 1 (George Lucas ) DLP DMD (Digital Micromirror Device)( TI ) 28
29 TiAl 3 DMD TiAl 3 (DLP) DMD TiAl 3 - (J.Tregilgas, Advanced materials and Processes, (2005 Jan.) 45-49) 29
30 FBAR (Film Balk Acoustic Resonator) LSI LSI (T.Matsumura (NICT), 2009 IEEE Internl. Ultrasonic Symp. (2009) 2141) 30
31 LSI SAW (502 MHz) (SAW) LSI (K. D. Park, IEEJ The 26th Sensor Symposium, 37 (2009) 31
32 MEMS SAW (T.Yasue, Transducers 2011) 32
33 Au 33
34 Au/Cr Through via hole NPG LTCC Au Photoresist LTCC LTCC h 2 h 2 > h 1 h 1 Si Au-Sn LTCC MEMS components Mechanical sealing frame Pressure, voltage and heat (Sn ) LTCC AuSn LTCC h 1 h 2 NPG Si (NPG) ENAS ) 34 (Y.-C. Lin, W.-S. Wang et.al., Transducers 2011)
35 6 / ( 1039, 2010/9/20) 35
36 Beam Blanker Array 1.4mm 1.5mm (110 ) 13,000 Y 2 m X 22nm (30nm LS ) (5kV) 0.3nA 10 (300mm ) / Mapper ( (EB) ( EB ( ) (2009) p.158) 36
37 10 mm Si (A Kojima, H. Ohyi and N. Koshida ( ), J. Vac. Sci. Technol., 37 B26, 6 (2008) 2064)
38 ( ) 38
39 MEMS PC (80 ) MEMS (MEMSPC) MEMS (20mm ) (MNC) (2 LSI )) ( SIC) ( (4/6 )) (4/6 ) U.C.Berkeley MEMS MEMS Industry Group IMEC NICT LETI MEMS 39
40 2 ( ) (,,,, vol.10, no10, pp.32-35, Oct.1990.) 40
41 ( ) 41
42 ( ) 42
43 (MNC) (2 LSI ) ( ) (4/6 MEMS ) MEMS MEMS MEMS (20mm ) (8 ) 43
44 ( ) 4 Tr 4/6 MEMS 44
45 ( ) 45
46 ( ) 46
47 IMEC ) IMEC Strategic Partner ( (EPFL)) 47
48 48
49 49
50 ) MEMS ( CD) ( ) / / / / / / MEMS (MEMSPC) MEMS 50
51 MEMS ican ican LED 2 ican ican ican2009 ican 11 (2010/9/3) ICAN MEMS 51
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53 53
54 ( ) ( )
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1. 2. ( ) 3. ( ) 4. ( ) 5. ( ) 6. MEMS 20mm 400 (40 )100 A-A A 2. ( ) MEMS A (L.M.Roylance et.al., IEEE Trans. on Electron Devices, ED-26 (1979) p.1911) ( (In-Vivo Oximetry)) (J.M.Schmitt,F.G.Mihm and
More information( )
MEMS 4 : ( ) ( ) Pt ITO Si (2 m) Si (0.2 m) (T.Ono et.al., J.Micromech.Microeng.,10 (2000) 445-451) DEMA (Distributed Electrostatic MicroActuator) (XY ) DEMA (Distributed Electrostatic MicroActuator)
More information) ( ) ( 34,3 (1995))
4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( ) ) ( ) ( 34,3 (1995)) (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )
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5. MEMS 3 : IC NMOS ( ) (T.Hoshino (Tokyo Electron Ltd.) et.al., 18 th Sensor Symposium late news, 2001) 10000 memory : Probe (pad) Count 4000 Cobra probe cards 2000 ASIC 200 LCD driver IC Epoxy-needle
More information) ( ) ( 34,3 (1995))
4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( ) ) ( ) ( 34,3 (1995)) (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )
More informationc c SSIS10 10 10 1998 2001 SSIS 2001 LSI 2001 MIRAI NECASKA SELETE 21 5ISSCC LSI 2004 2004SSIS PR 60 70
Encore SSIS 10 c c SSIS10 10 10 1998 2001 SSIS 2001 LSI 2001 MIRAI NECASKA SELETE 21 5ISSCC LSI 2004 2004SSIS PR 60 70 SSIS NOSIDE PR SSIS SSIS PR 2000 5SSIS SSIS 1 2001 5 8 3 2004 SSIS 1 2 SSIS 24 SSISPR
More information2 ( ) PVD (Physical Vapor Deposition)
2 ( ) PVD (Physical Vapor Deposition) G.Lim et.al., Robotica, 14 (1996) pp.499-506 ( ) ( Ionics, 20, 9 (1994) p.147) MEMS CVD (Chemical Vapor Deposition) CVD MacDonald et.al. MEMS 90 CVD 160-220ºC 1,1,1,5,5,5,5-
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5. MEMS 3 : IC NMOS ( ) (T.Hoshino (Tokyo Electron Ltd.) et.al., 18 th Sensor Symposium late news, 2001) 10000 memory : Probe (pad) Count 4000 Cobra probe cards 2000 ASIC 200 LCD driver IC Epoxy-needle
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