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つづるかやぬま
5 years ago
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1 Black box 4 Black box,

2 h p m mm m nm 4 LV F R A LV LV R F A LV 7

3 Y Web Webhttp:// () P: 4m D: m P: 8m D: 4m H: 8 m H: 8 m m P: 3m D: 6m H:8 m 4m P: 8m D: 64m H: 8 m m 5m 3

Si Contact angle degree Hysteresis of contact angle

4 8 4 6 Pillar diameter D m Si PTFE E T H H H h l D

4 Si Contact angle degree Hysteresis of contact angle degree Hysteresis Advancing angle Receding angle H [ m]. 48 D P=D H 5 H [ m] Case of flat surface Pillar diameter D m Si PTFE E T H H H h l D T l h H D D D D B (A) (B) (C) A A' A-A' 4 o (a) 5m (b) a 5m (c) 5m h=.8m d=4m B'.5mm B-B' 69 o.5mm.5mm.5mm 4

Triangular grooves Rectangular grooves 6 o 5m 5m CCD

solidification, micro litre y Surface Evolver y 鮫

Siemens Forum, 998 Reservoir Rotation stage 5 [ m]

5 Triangular grooves Rectangular grooves 6 o 5m 5m CCD camera Light source slit droplet stage Experiment Simulation 8 y x z.4mm z 8 4 y y 4 z z 5m 5m Photopolymer droplet after solidification, micro litre y Surface Evolver y 鮫 Landesmuseum fuer Technik und Arbeit in Mannheim, Bionik, Siemens Forum, 998 Reservoir Rotation stage 5 [ m] Rotation Liquid Reservoir 4 CCD 6 Patterned surface CCD =3 deg. W P CCD T= s T= ns H st International Symposium on Functional Surfaces m 5

V-shape Water ( ) Oil Orthogonal Sliding angle [deg.

6 Pitch P W m Width W Height H W unit: m H No. =5 m W W m PDMS V H Projection area of liquid mm Liquid Liquid Flat Parallel Flow V-shape Water ( ) Oil Orthogonal Sliding angle [deg.] 6 4 Pure water Flat Orthogonal Parallel 4 6 Pitch P [ m] P D m H Sliding angle [deg.] 6 4 Oil Flat Not slide down Orthogonal Parallel 4 6 Pitch P [ m] P m P 3m PTFE4 7 6

7 OTSSAM SPM (HSO:HO=3:) 4 (a) OTS (%vol.) OTS (b) OTS-SAM OTS OTS: Octadecyltrichlorosilane (c) OTS (d) SPM (HSO 4:HO =3:) (e) OTS nm Height nm.5m A PTFE SiO Location m Cross-section (A-B) B 5nm Height nm 5m OTS SiO Location m Cross-section (C-D) (a) PTFE/SiO pattern (b) OTS/SiOpattern 4 C D Pressure Friction material Move Friction material st (transition) s= V/ p : V: p: Sample (a) JIS (b) ASTM Kinetic friction coefficient Boundary lubrication Hydrodynamic lubrication Stribeck Characteristic value Motors Data Filter PC Control Elastic body X Floor sample Z-stage Slider Linear stage Water Z (in sync with X) Force sensors Conditions, 44, 53, 46 Sliding speed V [m/s].-.8 Pressure p [Pa] 5, 4, 8, 4 5, 5,, 5 3,,, 5 3,,, 5, 5,, 5 P =m P =3m Flat s t-flat, 5 s s t-5 t- s t-3 P=5m P=5m e- e-8 e-6 e-4 s= V/ p 7

Fingerprint Motion Liquid Micro-structure on elastic body Elastic deformation Motion Hydrodynamic pressure Frictional properties

7 No. No.7 WP H.5 Friction coefficient 3. Dry Wet. Flat (dry) Flat (wet)...5 Dimension W, Hmm Width: const.

coefficient Merkel s disk Meissner corpuscle Ruffini Pacinian corpuscle ending Micro-structure can improve the traction

8 Fingerprint Motion Liquid Micro-structure on elastic body Elastic deformation Motion Hydrodynamic pressure Frictional properties No. 3 Profile P W H W H P H/W No. W H P H/W mm PDMS3 mmfrp8mry.5 Friction coefficient s= V/ p No. No.3. No.6 No.7 No. No.7 WP H.5 Friction coefficient 3. Dry Wet. Flat (dry) Flat (wet)...5 Dimension W, Hmm Width: const.5 Aspect ratio W, H Frequency of answer 6 4 P W P3 W5 friction coefficient hold/hitch painful P5 W5 P8 W4 P W5 3 friction coefficient Merkel s disk Meissner corpuscle Ruffini Pacinian corpuscle ending Micro-structure can improve the traction coefficient of CVT M. Ota, et al., Novel Micro surface Machining Techniques For improving the Traction Coefficient, Transmission and Driveline, 8(SP 47) 8

9 {} SEM 9

f r cos cos / h r Feed Vibration Micro slider Voice coil Guideway motor Amp Amp

m Band width:khz PC - Amplitude - Phase shift - Number of pulses ch function

texture slider Pull-off force Textured guide Perpendicular to the texture 3m

5mm Motion not constrained by texture (Condition B) Ridge width.

10 f r cos cos / h r Feed Vibration Micro slider Voice coil Guideway motor Amp Amp Amp. Phase shift Number of pulses Voice coil motor Laser micrometer Resolution:.m Band width:khz PC - Amplitude - Phase shift - Number of pulses ch function generator Textured Si(Guideway) Si Slider m Shear of adhesion Parallel to the texture slider Pull-off force Textured guide Perpendicular to the texture 3m Outline of slider (Superimposed of five) Motion direction Drive direction Motion direction 3deg. Drive direction.5mm Motion constrained by texture (Condition A) Textured Si.5mm Motion not constrained by texture (Condition B) Ridge width.8m Pitch m m Conditions A B Drive force(mn). 9 Slider Texture.5mm m.5mm RW:m 9.8mg Only the difference is the driving force The motion will be constrained by applying the proper condition Depth 7m 5m

11 揃 Y X Vibration x= sin(*t) y= 63.3mg ( 長さ 6m, 幅 3m, 高さ 3m) MoS WS CF PbO, CaF,BaF,B O 3, DLC Pb, Sn, In, Au, Ag PFPE PTFE UCLA

12 TIR M M

13 DMD 6m7m 8*6 SVGA 8*4SXGA SRAM G MTBF DMD (N. Maluf, An Introduction to Microelectromechanical Systems Engineering, Artech House Publishers, ) (N. Maluf, An Introduction to Microelectromechanical Systems Engineering, Artech House Publishers, ) DMD (N. Maluf, An Introduction to Microelectromechanical Systems Engineering, Artech House Publishers, ) 3

14 CDDVD Saleem H. Zaidi et al., IEEE Trans. Ele. Dev.48,6, 4

$Air Reflected light Glass No reflection occur Incident light Refractive index n.4 Transmitted light Discontinued change Distance Boundary (a) Incident light on smooth surface glass.$

15 Air Reflected light Glass No reflection occur Incident light Refractive index n.4 Transmitted light Discontinued change Distance Boundary (a) Incident light on smooth surface glass.4 Boundary Sub-wavelength Continuous change Distance (b) Incident light on structured surface (RIE) m m (a) First time coverage 7% (b) Two times coverage 8% Domain Line defect m 5nm (c) Three times coverage 85% m (a) Particles working as mask (b) Coverage 7% Reflection Incident Amplifier angle (3 ) angle(3 ) PC Detector Fiber optic Monochromator Light source Lens Substrate (c) Coverage 8% (d) Coverage 85% 5

Relative reflectance [%] 8 6 4 7% 8% 85% 8% (a) s (b) 3s (c) 4s 5nm 4

16 Relative reflectance [%] % 8% 85% 8% (a) s (b) 3s (c) 4s 5nm Wavelength [nm] (d) Over etching Relative reflectance [%] s 3 4s 3 3s 3s Wavelength [nm] Wavelength [nm] 5 4 4s Mirror surface Si Textured Si mm (a) Entire image of substrate 5nm 6

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