1 SOI KEK _SSS14_XraySOI_v4.key
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1 1 SOI KEK _SSS14_XraySOI_v4.key
2 l. X線CCD - スタンダード検出器 [Vol. 59, Suzaku すざく XIS 2 広視野(~20-30mm )かつ精密撮像 (~30μm ) ファノ極限の精密分光 (ノイズ ~3e- rms) 読み出しが遅い(~sec) パルサーやBHの高速現象が観測できない 非X線バックグラウンドが高い 暗い =遠方の 天体が観測できない g. 5. The CCD and heat sink assembly installed in the base. The ver shield is removed in this picture. 強度 lso supply reverse current to the TEC, to warm up the chip in orbit. The CCD temperature may be raised a few of C above that of the base. In practice, the requirement to excessive mechanical stresses due to differential thermal nsion of the copper heat sink relative to the alumina CCD rate imposes an upper limit on CCD temperature in this. For example, with the heat sink at a typical operating erature of 35 C, we have adopted a maximum allowccd temperature of about + 15 C. The CCD temperature limit is higher at higher heat sink temperatures. e PPU extracts a charge pattern characteristic of X-rays, d an event, after applying various corrections to the digital supplied by the AE/TCE. Extracted event data are sent to MPU. Details of the event extraction process are described すざく X線CCDが軌道上で得た生イメージ bsection 3.3. The PPU first stores the data from its CE in a memory called the pixel RAM. In this process, ほとんど非X線BGDの中でごく少数のX線を検出 d and dummy pixels1 are inserted in order to avoid a すざく データ X線信号 特に硬X線で卓越 X線エネルギー(keV) 非X線バックグラウンドのスペクトル (X線ではないのにX線と誤解した)
3 X - CCD 3 BH BH BH BH BH A* 100 TT+09 BGD (0.3-40keV) SOIPIX
4 SOIPIX: Silicon-On-Insulator CMOS ( Si) (SiO2) ( Si) ~1μsec BGD
5 SOIPIX - 5 SOIPIX If BGD If = CCD
6 mm 4.5mm XRPIX1 XRPIX1b XRPIX2 XRPIX2b XRPIX3 XRPIX3b 2.4 mm 2.4 mm First Model 2.9 mm 2.9 mm Trigger 6.0 mm 6.0 mm Charge Sensitive Output Middle Size Buttable AMP Built-in ADC B x 2 + XRPIX ΔΣ-type ADC
7 7 10e (rms) 3e (rms) FY CDS CSA
8 7 10e (rms) 3e (rms) 4 CDS CSA CSA ADC FY2013 ( ) Fe-55 = 33e (rms) ΔE = 300eV (FWHM) Takeda+13 Mn-Kα (5.9keV) Mn-Kβ (6.5keV) [kev] ~1keV CCD, DEPFET ~140eV
9 - 500μm & 8 22keV X = Floating Zone (4kΩcm) 500μm V 0.5 Matsumura+14 in Prep. back_bias 200V 500μm (>250μm) X = LBNL Pizza Process Battaglia+12 NIM-A 0.6±0.2μm ( 0.1μm)
10 Pulse Hight (ch) - 9! TRIG_OUT SCLK 22keV X-ray detection Cd-109 Fe-55 (5.9keV) CSA CA[151-0] RA[151-0] Row Column 4μsec Pulse Hight (ch) 5.4 μv/e- - - >1kHz - - = Offset 7.0 μv/e- X-ray Energy (kev) Takeda et al., IEEE (2013)
11 Pulse Hight (ch) - 9! Fe-55 (5.9keV) Trigger TRIG_OUT 22keV X-ray detection Cd-109 SCLK Data Transfer CA[151-0] CSA RA[151-0] Analog out Row 40 µs Column 4μsec Pulse Hight (ch) 5.4 μv/e- - - >1kHz - - = Offset 7.0 μv/e- X-ray Energy (kev) Takeda et al., IEEE (2013)
12 keV SOIPIX () 1( ) SiO2 1 (30μm)
13 keV SOIPIX PIXOR (4x4 ) 1 (8μm)
14 keV kev SOIPIX PIXOR (4x4 ) 1 (8μm) Astro-H HXI(DSSD) >40keV DSSD120e- (rms) SOIPIX E >15keV( 0.43keV) >0.3keV
15 11 まとめ イベント駆動読み出し型X線SOIピクセル検出器を開発 反同時計数による非X線BGDを2桁下げる 4.5mm角の素子の開発に成功 読み出しノイズ33-(rms) 5.9keV (FWHM) 空乏層厚み~500μm 裏面不感層~0.6μm トリガ読み出しに成功 5年後に衛星搭載品を作れる状態にする A-R-Tec Analog and RF Technologies URL: info@a-r-tec.jp
2 CCD ( ) ( ) Astro-E2 1706kg M-V /7/ Astro-H 2600kg H2A 2015
Kyoto's SOIPIX 1 (tsuru@cr.scphys.kyoto-u.ac.jp) Ryu et al. IEEE NSS 20, Conf. Record XRPIX1-CZ -FI Ryu et al. IEEE TNS 58, 2528 (2011) XRPIX1-CZ-FI Tsuru et al. IEEE NSS 2011 Review Ryu et al. IEEE NSS
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