1001
µµ 1.... 2 2.... 7 3.... 9 4. InGaAs/GaAs PIN... 10 5. InGaAs... 17 6. PbS/PbSe... 18 7. InSb... 22 8. InAs/InSb... 23 9. MCT (HgCdTe)... 25 10.... 28 11.... 29 12. (Si)... 30 13.... 33 14.... 37 1
µ µµµ µµµµ ε ε ε ε ε lx (W cm -2 sr -1 m -1 ) 10 4 10 3 10 2 10 1 10 0 10-1 10-2 10-3 10-4 10-5 10-6 10-7 T(K)=6000 5000 4000 3000 2000 1500 1000 800 600 400 273 200 10-8 0.1 1 10 100 ( m) λλλ λ σ λ µ µ λ 2
µµ 3
λ λ λ µµ 4
λ ητλ σ µµτσ ηλ η λ η λ λ ηλ ηλ η λ λ ηλ µ * * λ τ σ σ ητλ 5
*λ * Ω Ω Ω Ω Ω 6
7
D* (cm Hz 1/2 /W) D* (λ, 10, 1) = 6 10 8 D* (λ, 10, 1) = 1 10 8 D* (λ, 10, 1) = 1 10 9 D* (λ, 10, 1) = 2 10 8 D* (500, 600, 1) = 1 10 9 D* (500, 600, 1) = 1 10 8 D* (500, 1200, 1) = 2 10 9 D* (500, 1000, 1) = 2 10 10 D* (λp) = 1 10 11 D* (λp) = 5 10 12 D* (λp) = 2 10 11 D* (500, 1200, 1) = 1 10 10 D* (500, 1200, 1) = 2 10 10 D* (500, 1000, 1) = 1 10 10 4.2 D* (500, 900, 1) = 1 10 11 D* (500, 900, 1) = 8 10 9 D* (500, 900, 1) = 5 10 9 D* (500, 900, 1) = 5 10 9 D* (500, 900, 1) = 5 10 9 D* (500, 900, 1) = 5 10 14 Ge (77 K) D*(cmHz 1/2 λ /W) 10 13 10 12 10 11 10 10 10 9 Ex. InGaAs (223 K) Ge (300 K) PbSe (196 K) PbS (300 K) Ge (196 K) InGaAs (300 K) PbS (196 K) Ex. InGaAs (253 K) PbS (77 K) Ex. InGaAs (300 K) InAs (77 K) InSb (77 K) InAs (196 K) HgCdTe (77 K) GeAu (77 K) 300 K () 300 K () HgCdTe (77 K) HgCdTe (77 K) Si:Ga (4.2 K) (77 K) 10 8 PbSe (300 K) PbSe (77 K) (300 K) (300 K) (300 K) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 (µm) 8
* λ λ = * λ λ = λ η η η 600 C Si 200 C InGaAs 100 C PbS 50 C PbSe 0 C InSb -50 C MCT 9
(A/W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 InGaAs (1.9 m) GaAs InGaAs (2.1 m) 1.0 InGaAs ( m) (Typ. Ta=25 C) InGaAs (2.6 m) 1.5 2.0 2.5 3.0 µ µµµ 6.1 InAs 6.0 In0.8Ga0.2As 5.9 (Å) 5.8 5.7 In0.53Ga0.47As InP GaAs 5.6 5.5 0 0.4 0.8 1.2 1.6 2.0 (ev) 10
Rf A 11
102 100 (Typ. Ta=25 C, λ=830 nm, RL=2 Ω, VR=0 V, 0.1 mm) (%) 98 96 94 92 90 0 2 4 6 8 10 12 14 16 (mw) R VR C RL R Rf 102 (Typ. Ta=25 C, λ=1.3 m, RL=2 Ω, VR=0 V, 0.3 mm) 100 1 mm VR C - + (%) 98 2 mm 96 94 3 mm 5 mm 92 90 0 2 4 6 8 10 12 14 16 (mw) 12
λ λ (Typ.) 100 25 C -20 C (%) 80 60 40-196 C -77 C µ (%) 20 0 0.8 1.0 1.2 1.4 1.6 1.8 ( m) (Typ.) 100 25 C 80-30 C 60-40 C -50 C 40 20 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 ( m) µ 13
(A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 400 600 (Typ. Ta=25 C) 800 1000 D* (cm Hz 1/2 /W) (nm) 10 14 (Typ.) -20 C -10 C 10 13 25 C 10 12 µ 10 11 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ( m) 10 12-50 C (Typ.) (Typ. Ta=25 C, f=1 MHz) 10 4 5 mm 10 3 3 mm -40 C 2 mm D* (cm Hz 1/2 /W) 10 11 10 10-30 C 25 C (pf) 10 2 10 1 10 0 1 mm 0.5 mm 0.3 mm 0.07 mm 10 9 1.0 1.5 2.0 2.5 3.0 ( m) 10-1 0.01 0.1 1 10 100 (V) 14
10 1 (Typ. Ta=25 C, f=1 MHz) 10 12 (Typ. VR=10 mv) 10 11 0.3 mm (pf) 10 0 0.12 mm 0.08 mm 0.04 mm (Ω) 10 10 10 9 10 8 10 7 10 6 2 mm 3 mm 5 mm 0.5 mm 1 mm 10-1 0.01 0.1 1 (V) 10 100 10 5 10 4-60 -40-20 0 20 40 60 80 100 ( C) Ω Rf R K C A 50 Ω (50 Ω) Isc - + Cf EO = - (Isc Rf) V VR 15
µ µ φ 3 (Typ. Ta=25 C, VR=2 V) 0-3 (db) -6-9 -12-15 -18 0 2 4 6 8 10 12 14 16 18 20 (GHz) 16
(db) () 0.5 0.4 85 C 25 C 0 C -20 C 0.3 0.2 0.1 0-0.1-0.2 C L -0.3-0.4-0.5 1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62 1.63 1.64 ( m) (pcs) 18 16 14 12 10 8 6 4 2 0 (Ta=25 C, λ=1.55 m, ) 1 3 5 7 9 11 13 15 17 19 21 23 25 PDL (mdb) 17
µµ P NInGaAs 250 m 500 m 50 m25 m 300 m G9211-256S G9212-512S G9213-256S G9214-512S G9208-256W 0.9 1.67 0.9 2.55 m 1 2-256 512 256 512 256-50 25 50 25 50 m 250 500 250 m 28DIP - 63.5 mm - 18
π τ τ (Typ.) 100 * π τ pt 80 T= -20 C (%) 60 40 T= -10 C 10 500 K 4.8 W/cm 2 15 V tr=200 µs S/N (Typ. Ta=25 C) 20 T=25 C 0 1 2 3 4 5 S/N () 1 S ( m) N 100 80 (Typ.) 0.1 10 1 10 2 10 3 (Hz) (%) 60 40 T=25 C T= -20 C T= -10 C 10 500 K 16.7 W/cm 2 15 V S/N (Typ. Ta=25 C) 20 0 1 2 3 4 5 6 7 ( m) S/N () 1 S N 19 0.1 10 2 10 3 10 4 (Hz)
1000 (Typ.) 100 +25 C 10-20 C 10 (Typ.) 500 K 4.8 W/cm 2 600 Hz 15 V 1 10 100 1000 1 P9217 (Hz) P9217 0.1-20 -10 0 10 20 30 40 50 60 70 ( C) (Typ. Ta=25 C, ) 10 2 10 1 10 (Typ.) 500 K 16.7 W/cm 2 600 Hz 15 V 10 0 10-1 1 10-2 10-3 10-9 10-8 10-7 10-6 10-5 10-4 (W/cm 2 ) 10 2 NEP (Typ. Ta=25 C, ) 0.1-20 -10 0 10 20 30 40 50 60 ( C) (Typ.) 10 10 1 10 0 10-1 1 10-2 10-3 NEP 10-7 10-6 10-5 10-4 10-3 10-2 (W/cm 2 ) 0.1-20 -10 0 10 20 30 40 50 60 70 ( C) 20
10 (Typ.) 100 (Typ.) 1 80 0.1-20 -10 0 10 20 30 40 50 60 (%) 60 40 ( C) 20 0.1 1 10 RL/Rd 20 RL PbS PbSe +30 V 300 k Rd 0.01 Ri 1 M - + 10 p Rf 100 k TLO71 pt 21
µ (Typ. T= -60 C) 10 11 1 D* (λ, 1200, 1) (cm Hz 2 /W) 10 10 10 9 10 8 2 3 4 5 6 7 ( m) (Typ.) 10 12 P7163 (T= -196 C) (Typ.) 10 11 D* (λ, 1200, 1) (cm Hz 1/2 /W) 10 11 10 10 10 9 10 8 P10090-11 (T= -10 C) P10090-01 (T=25 C) P10090-21 (T= -30 C) D* (λ, 1200, 1) (cm Hz 1/2 λ /W) 10 10 10 9 10 7 1 2 3 4 5 6 ( m) 10 12 (Typ. T= -196 C) 10 8-70 -60-50 -40-30 -20-10 0 ( C) D* (λ,1200,1) (cm Hz 1/2 /W) 10 11 10 10 1 2 3 4 5 6 ( m) 22
* λ η λ η FOV f/number 5 10 10 5 4 3 2 1 0.5 FOV D* (500 K) (cm Hz 1/2 /W) 2 10 10 1 10 10 5 10 9 2 10 9 1 10 9 10 20 40 100 180 FOV () 23
λ λ 1.8 1 D* (cm Hz 2 /W) 10 11 10 10 10 9 µ 100 P2748-40 P5274 ( m) P5274-01 (Typ. T= -196 C) 10 8 0 5 10 15 20 25 (Typ.) 1.6 (ev) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 300 K 0 K (nv/hz 1/2 ) 10-0.2-0.4 0 0.2 0.4 0.6 0.8 1.0 X (Hg1-x CdxTe) 1 10 100 1000 10000 (Hz) µ 24
10 11 (Typ.) +VB Ri Cf D* (cm Hz 1/2 /W) 10 10 10 9 500 K λp MCT RL is Rf Vo-is Rd 1 + Ri - + Rf Vo is: Rd: 10 8-70 -60-50 -40-30 -20-10 0 10 20 30 ( C) 5.8 (Typ.) D* 5.7 5.6 ( m) 5.5 5.4 5.3 5.2 5.1 10 15 20 25 30 35 (ma) 5.0-100 -80-60 -40-20 0 20 40 ( C) Ω 25
9.2 ± 0.3 Si 8.1 ± 0.2 5.5 ± 0.2 PbS PbSe 0.4 3.3 ± 0.2 4.3 ± 0.2 6.1 ± 0.2 30 MIN. 5.1 ± 0.2 Si (N) Si (P) PbS, PbSe PbS, PbSe 26
µ PGe CO2 A B T V -K1h 0 K2h K hw hw K2l Vh T -K1l Vl n V 27
Si 49 48 (V/W) 47 46 45-20 -10 0 10 20 30 40 50 60 70 80 Si ( C) 20 19 η αω τ η α ω τ (kω) 18 17 16 15-20 -10 0 10 20 30 40 50 60 70 80 ( C) 28
10-2 (Typ. Ta=25 C, 22 mm, 5 cm) 10 9 7 m 814 m (V) 10-3 10-4 10-5 10-6 D* λ (λ, 10, 1) (cm Hz 1/2 /W) 10 8 Si 4.3 m 10-7 10-7 10-6 10-5 10-4 10-3 (W) 10-2 10 7 0 2 4 6 8 10 12 14 16 ( m) (Typ. Ta=25 C) 120 100 80 (%) 60 40 0.5 mm C1 1.0 mm 20 R2 0 0.1 1 10 100 -V (Hz) R1 2 3 4 - + 6 Vout 7 +V = 1 + R2/R1 fhigh = 1 / (2πC1R2) 29
C1 R2 +V R3 R4 R1 +V GND 2-3 + 4 7 6 = 1 + R2/R1 fhigh = 1 / (2πC1R2) Vout 51 ± 1 37 ± 1 8.5 ± 0.5 43 ± 1 46 ± 1 12.5 32 ± 1 6.5 72 ± 1 95 ± 1 102 ± 1 9.5 63.5 ± 1 28.5 66.8 ± 1 10 ± 1 172 ± 2 +V +V NC Ra Rb Rc Rth Rd R1 3 7 + 6 2-4 -V R2 C1 = 1 + R2/R1 fhigh = 1 / (2πR2C1) Vout Vth 10 6 He 10 2 (Torr) 10-2 10-6 H2 O2 N2 Ne Ar 10-10 1 10 100 (K) 30
Qc Tc P N P N T Th Qh - + V AC 31
25 (Ta=25 C) 20 15 10 () ( C) 5 0-5 () T (%) -10-15 -20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 0.7 A (A) 1.0 A = Iac () Idc () 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 32
10 MAX. 23.8 12.8 28.3 MAX. 38.9 MAX. 26.7 +0-0.01 22 10.6 MAX. 12.7 29.0 MAX. FOV (2 ) 56UNC-2B : 5.5 4PL 27.4 MAX. 50.1 MAX. 34.8 MAX. 39.4 25.9 26.8 50.8 ± 0.1 56.0 ± 0.3 14.5 MAX. 50.3 MAX. 81.1 MAX. 43 58 36.4 (4 ) 2.5 20.1 MAX. 70.0 76.5 : 20 MAX. KIRDA0130JA 33
Ω ΩΩ Ω Ω Ω µ µ 34
Ωγ Ω γ 1.0 0.9 0.99 0.98 0.95 0.94 0.92 0.90 0.85 () λλ λ λ1 π λλ λ e 0.8 0.7 0.6 0.5 0.4 0.80 0.75 () () 0.64 0.57 0.45 0.35 0.3 0.2 0.31 0.21 () () µµµ lx (W cm -2 sr -1 m -1 ) 10 4 10 3 10 2 10 1 10 0 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 0.1 T(K)=6000 5000 4000 3000 2000 1500 1000 800 600 400 273 200 1 10 100 ( m) 0.10 0.1 () 0 (%) 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 ( m) µ 35
100 10 10 80 NO (5.3) (%) 60 40 20 () 10 9 H2O (1.4) HC (3.4) SO2 (4) CO (4.7) 0 1 2 3 4 5 ( m) H2O (1.9) CO2 (4.3) 10 8 1 2 3 4 5 6 ( m) µµµ µ µ µ 36
( ) Z X (b) 1 ( ) µµ 0.450.8 m 0.81 m 23 m 10 m () 37
9 jp.hamamatsu.com Sept. 2007 38