特長 8MHz 2.3V 12.6V 2mA/ 3μV 2 3mm 3mm.8mm DFN パッケージ 大きい出力電流 :ma( 標準 ) 低い電圧ノイズ :8.nV/ Hz( 標準 ) スルーレート :2V/μs( 標準 ) 同相除去比 :1( 標準 ) 電源除去比 :97( 標準 ) 開ループ利得 :8V/( 標準 ) 動作温度範囲 : 4 ~8 LT181 は 8 ピン SO, MS8 および DFN パッケージ LT182 は 14 ピン SO パッケージ アプリケーション 低電圧高周波信号処理 A/D コンバータのドライブ レール トゥ レールのバッファ アンプ アクティブ フィルタ ビデオ ライン ドライバ L LT LTC および LTM はリニアテクノロジー社の登録商標です 他の全ての商標はそれぞれの所有者に所有権があります デュアル / クワッド 8MHz 2V/μs 低消費電力レール トゥ レール入出力高精度オペアンプ 概要 LT 181/LT182 DC / DC 1μV 8 2 2.3V 12.6V 3V V V LT181 MS8 SO-8 3mm 3mm.8mm DFN LT182 14 SO / LT18 標準的応用例 3V 1MHz 4 2 1MHz V IN 99Ω 99Ω 2.67k 22pF 47pF 1/2 LT181 1.1k 1.1k 2.21k 47pF 22pF 3V 1/2 LT181 V OUT GAIN () 4 6 8 1 V S /2 1812 TA1 12 1k 1k 1k 1M 1M 1M FREQUENCY (Hz) 1812 TA2 1812fc 1
絶対最大定格 (Note 1) 全電源電圧 (V S ~V S )...12.6V 入力電流 (Note 2)...±1mA 出力短絡時間 (Note 3)... 無期限動作温度範囲 (Note 4)... 4 ~8 規定温度範囲 (Note )... 4 ~8 接合部温度...1 保存温度範囲... 6 ~1 最大接合部温度 (DD パッケージ )...12 保存温度 (DD パッケージ )... 6 ~12 リード温度 MSOP SOIC ( 半田付け 1 秒 )...3 ピン配置 TOP VIEW OUT A IN A IN A V 1 2 3 4 A DD PACKAGE 8-LEAD (3mm 3mm) PLASTIC DFN T JMAX = 12 C, θ JA = 16 C/W, (Note 1) EXPOSED PAD INTERNALLY CONNECTED TO V. (PCB CONNECTION OPTIONAL) B 8 7 6 V OUT B IN B IN B OUT A IN A IN A V 1 2 3 4 TOP VIEW MS8 PACKAGE 8-LEAD PLASTIC MSOP 8 V 7 OUT B 6 IN B IN B T JMAX = 1 C, θ JA = 2 C/W, (Note 1) OUT A 1 IN A 2 IN A 3 V 4 TOP VIEW 8 7 6 V OUT B IN B IN B OUT A 1 IN A 2 IN A 3 V 4 IN B IN B 6 TOP VIEW OUT B 7 8 OUT C S8 PACKAGE 8-LEAD PLASTIC SO S PACKAGE 14-LEAD PLASTIC SO T JMAX = 1 C, θ JA = 19 C/W, (Note 1) T JMAX = 1 C, θ JA = 16 C/W, (Note 1) A B D C 14 OUT D 13 IN D 12 IN D 11 V 1 IN C 9 IN C 発注情報 * LT181CDD#PBF LT181CDD#TRPBF LAAM 8-Lead (3mm 3mm) Pastic DFN 4 C to 8 C LT181IDD#PBF LT181IDD#TRPBF LAAM 8-Lead (3mm 3mm) Pastic DFN 4 C to 8 C LT181CMS8#PBF LT181CMS8#TRPBF LTYR 8-Lead Pastic MSOP 4 C to 8 C LT181IMS8#PBF LT181IMS8#TRPBF LTYS 8-Lead Pastic MSOP 4 C to 8 C LT181CS8#PBF LT181CS8#TRPBF 181 8-Lead Pastic SO 4 C to 8 C LT181IS8#PBF LT181IS8#TRPBF 181I 8-Lead Pastic SO 4 C to 8 C LT182CS#PBF LT182CS#TRPBF LT182CS 14-Lead Pastic SO 4 C to 8 C LT182IS#PBF LT182IS#TRPBF LT182IS 14-Lead Pastic SO 4 C to 8 C さらに広い動作温度範囲で規定されるデバイスについては 弊社または弊社代理店にお問い合わせください * 温度グレードは出荷時のコンテナのラベルで識別されます 鉛フリー仕様の製品マーキングの詳細については http://www.inear-tech.co.jp/eadfree/ をご覧ください テープアンドリールの仕様の詳細については http://www.inear-tech.co.jp/tapeandree/ をご覧ください 2 1812fc
電気的特性 T A = 2 V S = V V V S = 3V V V CM = V OUT = 1/2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V CM = V V CM = V (MS8) V CM = V (DD) V OS Input Offset Shift V CM = V to V S 1.V 2 18 Input Offset Votage Match V CM = V V CM = V (MS8) V CM = V (DD) I B Input Bias Current V CM = 1V 2 Input Bias Current Match 7 14 17. 1 1 28 V CM = 1V 2 2 I OS Input Offset Current V CM = 1V 2 2 Input Noise Votage.1Hz to 1Hz 1.4 P-P e n Input Noise Votage Density f = 1kHz 8. nv/ Hz i n Input Noise Current Density f = 1kHz 1 pa/ Hz C IN Input Capacitance 2 pf A VOL Large-Signa Votage Gain V S = V, V O =.V to 4.V, at V S /2 V S = V, V O = 1V to 4V, R L = 1Ω at V S /2 V S = 3V, V O =.V to 2.V, at V S /2 CMRR Common Mode Rejection Ratio V S = V, V CM = V to 3.V V S = 3V, V CM = V to 1.V CMRR Match V S = V, V CM = V to 3.V V S = 3V, V CM = V to 1.V Input Common Mode Range V S V PSRR Power Suppy Rejection Ratio V S = 2.V to 1V, V CM = V 78 97 PSRR Match V S = 2.V to 1V, V CM = V 72 97 Minimum Suppy Votage (Note 6) 2.3 2. V V OL Output Votage Swing Low (Note 7) No Load I SINK = ma I SINK = 2mA V OH Output Votage Swing High (Note 7) No Load I SOURCE = ma I SOURCE = 2mA I SC Short-Circuit Current V S = V V S = 3V I S Suppy Current per Ampifier 1.6 2 ma GBW Gain Bandwidth Product Frequency = 2MHz 4 8 MHz SR Sew Rate V S = V, A V = 1,, V O = 1V to 4V 12. 2 V/µs FPBW Fu Power Bandwidth V S = V, A V = 1, V O = 4V P-P 2 MHz HD Harmonic Distortion V S = V, A V = 1,, V O = 2V P-P, f C = khz 7 c t S Setting Time.1%, V S = V, V STEP = 2V, A V = 1, 2 ns G Differentia Gain (NTSC) V S = V, A V = 2, R L = 1Ω.3 % θ Differentia Phase (NTSC) V S = V, A V = 2, R L = 1Ω.4 Deg 3 3. 3 8 78 79 72 2 2 8 8 8 1 97 1 97 16 8 22 18 12 4 4 4 3 8 3 6 9 12 2 1 3 2 2 6 2 6 2 8 V/ V/ V/ ma ma 1812fc 3
電気的特性 < T A < 7 V S = V V V S = 3V V V CM = V OUT = 1/2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V CM = V V CM = V (MS8) V CM = V (DD) V OS Input Offset Shift V CM = V to V S 1.V 3 27 Input Offset Votage Match V CM = V V CM = V (MS8) V CM = V (DD) V OS TC Input Offset Votage Drift (Note 8) 1. / C I B Input Bias Current V CM = 1V.2V Input Bias Current Match V CM = 1V.2V I OS Input Offset Current V CM = 1V.2V A VOL Large-Signa Votage Gain V S = V, V O =.V to 4.V, at V S /2 V S = V, V O = 1V to 4V, R L = 1Ω at V S /2 V S = 3V, V O =.V to 2.V, at V S /2 CMRR Common Mode Rejection Ratio V S = V, V CM = V to 3.V V S = 3V, V CM = V to 1.V CMRR Match V S = V, V CM = V to 3.V V S = 3V, V CM = V to 1.V Input Common Mode Range V S V PSRR Power Suppy Rejection Ratio V S = 2.V to 1V, V CM = V 74 91 PSRR Match V S = 2.V to 1V, V CM = V 68 91 Minimum Suppy Votage (Note 6) 2.3 2. V V OL Output Votage Swing Low (Note 7) No Load I SINK = ma I SINK = 2mA V OH Output Votage Swing High (Note 7) No Load I SOURCE = ma I SOURCE = 2mA I SC Short-Circuit Current V S = V V S = 3V I S Suppy Current per Ampifier 2 2.8 ma GBW Gain Bandwidth Product Frequency = 2MHz 3 7 MHz SR Sew Rate V S = V, A V = 1,, V O = 1V to 4V 11 22 V/µs 2 2. 2 82 74 76 68 2 1 12 14 29.6 2 2 27 2 2 2 2 7 6 7 11 93 11 93 18 1 3 2 1 6 4 3 6 9 3. 8 12 1 3 2 4 6 3 3 8 22 6 8 3 9 V/ V/ V/ ma ma 4 1812fc
電気的特性 4 < T A < 8 V S = V V V S = 3V V V CM = V OUT = 1/2 Note SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage V CM = V V CM = V (MS8) V CM = V (DD) 17 2 32.7 7 8 11 4 V OS Input Offset Shift V CM = V to V S 1.V 3 3 Input Offset Votage Match V CM = V V CM = V (MS8) V CM = V (DD) V OS TC Input Offset Votage Drift (Note 8) 1. / C I B Input Bias Current 4.2V 6 22 Input Bias Current Match V CM = 1V.2V I OS Input Offset Current V CM = 1V.2V A VOL Large-Signa Votage Gain V S = V, V O =.V to 4.V, at V S /2 V S = V, V O = 1.V to 3.V, R L = 1Ω at V S /2 V S = 3V, V O =.V to 2.V, at V S /2 CMRR Common Mode Rejection Ratio V S = V, V CM = V to 3.V V S = 3V, V CM = V to 1.V CMRR Match V S = V, V CM = V to 3.V V S = 3V, V CM = V to 1.V Input Common Mode Range V S V PSRR Power Suppy Rejection Ratio V S = 2.V to 1V, V CM = V 73 9 PSRR Match V S = 2.V to 1V, V CM = V 67 9 Minimum Suppy Votage (Note 6) V CM = V O =.V 2.3 2. V V OL Output Votage Swing Low (Note 7) No Load I SINK = ma I SINK = 1mA V OH Output Votage Swing High (Note 7) No Load I SOURCE = ma I SOURCE = 1mA I SC Short-Circuit Current V S = V V S = 3V I S Suppy Current per Ampifier 2.1 3 ma GBW Gain Bandwidth Product Frequency = 2MHz 2 7 MHz SR Sew Rate V S = V, A V = 1,, V O = 1V to 4V 9 18 V/µs 2 2 17. 81 73 7 67 12. 12. 2 28 32 2 2 2 2 6 6 6 11 93 11 93 1 1 17 2 1 3 3 3 12 16 18 4 7 3 3 9 2 4 9 3 7 V/ V/ V/ ma ma 1812fc
電気的特性 T A = 2 V S = V V CM = V V OUT = V SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage (MS8) (DD) V OS Input Offset Shift to V S 1.V 3 47 Input Offset Votage Match (MS8) (DD) I B Input Bias Current V CM = V S 1V V CM = V S Input Bias Current Match V CM = V S 1V V CM = V S I OS Input Offset Current V CM = V S 1V V CM = V S Input Noise Votage.1Hz to 1Hz 1.4 / P-P e n Input Noise Votage Density f = 1kHz 8. nv/ Hz i n Input Noise Current Density f = 1kHz 1 pa/ Hz C IN Input Capacitance f = 1kHz 2 pf A VOL Large-Signa Votage Gain V O = 4V to 4V, V O = 2V to 2V, R L = 1Ω CMRR Common Mode Rejection Ratio V CM = V S to 3.V 8 19 CMRR Match V CM = V S to 3.V 79 19 Input Common Mode Range V S V S V PSRR Power Suppy Rejection Ratio V S = 2.V to 1V, V S = V 78 97 PSRR Match V S = 2.V to 1V, V S = V 72 97 V OL Output Votage Swing Low (Note 7) No Load I SINK = ma I SINK = 2mA V OH Output Votage Swing High (Note 7) No Load I SOURCE = ma I SOURCE = 2mA I SC Short-Circuit Current 2 ma I S Suppy Current per Ampifier 1.8 3 ma GBW Gain Bandwidth Product Frequency = 2MHz 7 MHz FPBW Fu Power Bandwidth V O = 8V P-P.9 MHz SR Sew Rate A V = 1,, V O = ±4V, Measured at V O = ±2V 2 V/µs HD Harmonic Distortion A V = 1,, V O = 2V P-P, f C = khz 7 c t S Setting Time.1%, V STEP = V, A V = 1V, 3 ns G Differentia Gain (NTSC) A V = 2, R L = 1Ω.3 % θ Differentia Phase (NTSC) A V = 2, R L = 1Ω.2 deg 2 2. 1 18 26.7 1 27 32 2 4 2 2 2 2 7 7 1 9 22 2 13 4 6 7 1 3. 1 13 16 2 1 3 2 2 7 2 8 26 8 V/ V/ 6 1812fc
電気的特性 < T A < 7 V S = V V CM = V V OUT = V SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage (MS8) (DD) V OS Input Offset Shift to V S 1.V 4 67 Input Offset Votage Match (MS8) (DD) V OS TC Input Offset Votage Drift (Note 8) 1. / C I B Input Bias Current 1V.2V Input Bias Current Match 1V.2V I OS Input Offset Current V CM = V S 1V V CM = V S.2V A VOL Large-Signa Votage Gain V O = 4V to 4V, V O = 2V to 2V, R L = 1Ω CMRR Common Mode Rejection Ratio V CM = V S to 3.V 82 1 CMRR Match V CM = V S to 3.V 76 1 Input Common Mode Range V S V S V PSRR Power Suppy Rejection Ratio V S = 2.V to 1V, V S = V 74 91 PSRR Match V S = 2.V to 1V, V S = V 68 93 V OL Output Votage Swing Low (Note 7) No Load I SINK = ma I SINK = 2mA V OH Output Votage Swing High (Note 7) No Load I SOURCE = ma I SOURCE = 2mA I SC Short-Circuit Current 22. 4 ma I S Suppy Current per Ampifier 2.4 4 ma GBW Gain Bandwidth Product Frequency = 2MHz 7 MHz SR Sew Rate A V = 1,, V O = ±4V, Measured at V O = ±2V 2 V/µs 1 2 2 22 29.7 24 3 34 3 4 2 2 2 2 17 1 2 2 1 6 8 1 13 4 1 17 19 3 2 4 7 3 3 8 2 7 9 31 97 V/ V/ 4 < T A < 8 V S = V V CM = V V OUT = V Note SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS Input Offset Votage (MS8) (DD) V OS Input Offset Shift to V S 1.V 7 Input Offset Votage Match (MS8) (DD) 3 3 3.7 28 38 41 1 12 1 17 19 21 1812fc 7
電気的特性 4 < T A < 8 V S = V V CM = V V OUT = V Note SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V OS TC Input Offset Votage Drift (Note 8) 1. / C I B Input Bias Current 1V.2V Input Bias Current Match 1V.2V I OS Input Offset Current V CM = V S 1V V CM = V S.2V A VOL Large-Signa Votage Gain V O = 4V to 4V, V O = 1V to 1V, R L = 1Ω CMRR Common Mode Rejection Ratio V CM = V S to 3.V 81 14 CMRR Match V CM = V S to 3.V 7 14 Input Common Mode Range V S V S V PSRR Power Suppy Rejection Ratio V S = 2.V to 1V, V S = V 73 9 PSRR Match V S = 2.V to 1V, V S = V 67 9 V OL Output Votage Swing Low (Note 7) No Load I SINK = ma I SINK = 1mA V OH Output Votage Swing High (Note 7) No Load I SOURCE = ma I SOURCE = 1mA I SC Short-Circuit Current 12. 3 ma I S Suppy Current per Ampifier 2.6 4. ma GBW Gain Bandwidth Product Frequency = 2MHz 6 MHz SR Sew Rate A V = 1,, V O = ±4V, Measured at V O = ±2V 1 V/µs 12. 2 4 2 2 2 2 2 11 18 3 1 3 4 22 4 7 3 3 1 27 4 11 3 7 V/ V/ Note 1 絶対最大定格に記載された値を超えるストレスはデバイスに永続的損傷を与える可能性がある 長期にわたって絶対最大定格条件に曝すと デバイスの信頼性と寿命に悪影響を与える可能性がある Note 2 入力はバック トゥ バック ダイオードにより保護されている 差動入力電圧が 1.4V を超える場合 入力電流を 1mA 未満に制限すること 全数テストはされない Note 3 出力が無期限に短絡されるときは 接合部温度を絶対最大定格より下に抑えるために ヒートシンクが必要になることがある Note 4 LT181C/LT181I および LT182C/LT182I は 4 ~8 の動作温度範囲で動作することが保証されている Note LT181C/LT182C は ~7 の温度範囲で性能仕様に適合することが保証されている これらは 4 ~8 の拡張温度範囲で性能仕様に適合するように設計され 特性が評価されており 性能仕様に適合すると予想されるが これらの温度ではテストされないし QA サンプリングも行われない LT181I/LT182I は 4 ~8 の温度範囲で性能仕様に適合することが保証されている Note 6 最小電源電圧は電源除去比テストによって保証されている Note 7 出力電圧振幅は出力と電源レールの間で測定される Note 8 このパラメータに対しては全数テストは実施されない Note 9 整合パラメータは LT182 の 2 つのアンプ A と D の間の差および B と C の間の差である さらに LT181 の 2 つのアンプの間の差である Note 1 熱抵抗 (θ JA) はパッケージに接続された PC ボードのメタル量に依存して変化する 規定値はリードに短いトレースが接続されている場合である 望むなら SO-8 と MS8 のピン 4 SO-14 のピン 11 または DD パッケージの下側メタルを大きなメタル領域 (V S のトレース ) に接続して熱抵抗を大きく減らすことができる 8 1812fc
標準的性能特性 V OS V CM = V PNP V OS V CM = V NPN PERCENT OF UNITS (%) 3 3 2 2 1 1 V S = V, V V CM = V PERCENT OF UNITS (%) 4 4 3 3 2 2 1 1 V S = V, V V CM = V SUPPLY CURRENT (ma) 4 3 2 1 PER AMPLIFIER T A = 12 C T A = 2 C T A = C 2 1 1 2 INPUT OFFSET VOLTAGE () 2 12 4 4 12 2 INPUT OFFSET VOLTAGE () 1 2 3 4 6 7 8 9 1 11 TOTAL SUPPLY VOLTAGE (V) 12 1812 G1 1812 G2 1812 G3 OFFSET VOLTAGE () 4 3 2 1 1 2 3 4 T A = C T A = 2 C T A = 12 C V S = V, V TYPICAL PART 1 2 3 4 INPUT COMMON MODE VOLTAGE (V) INPUT BIAS CURRENT (µa) 1..8.6.4.2.2.4.6.8 1. 1 V S = V, V T A = 2 C T A = 12 C T A = C 1 2 3 4 6 INPUT COMMON MODE VOLTAGE (V) INPUT BIAS (µa).8.7.6..4.3.2.1.1 6 NPN ACTIVE V S = V, V V CM = V PNP ACTIVE V S = V, V V CM = 1V 4 2 2 4 6 8 TEMPERATURE ( C) 1812 G4 1812 G 1812 G6 1 V S = V, V 1 V S = V, V OUTPUT SATURATION VOLTAGE (V) 1.1.1 T A = 12 C T A = C T A = 2 C OUTPUT SATURATION VOLTAGE (V) 1.1.1 T A = 12 C T A = C T A = 2 C.1.1.1 1 1 1 LOAD CURRENT (ma) 1812 G7.1.1.1 1 1 1 LOAD CURRENT (ma) 1812 G8 1812fc 9
標準的性能特性 CHANGE IN OFFSET VOLTAGE ().6.4.2.2 T A = C T A = 2 C T A = 12 C.4.6 1. 2 2. 3 3. 4 4.. TOTAL SUPPLY VOLTAGE (V) 1812 G9 OUTPUT SHORT-CIRCUIT CURRENT (ma) 7 6 T A = 2 C T A = 12 C 4 3 2 T A = C SINKING 1 1 2 T A = C SOURCING 3 4 T A = 12 C 6 T A = 2 C 7 1. 2 2. 3 3. 4 4. POWER SUPPLY VOLTAGE (±V) 1812 G1 CHANGE IN OFFSET VOLTAGE () 2 16 12 8 4 4 8 12 16 2 R L = 1Ω. 1 1. 2 OUTPUT VOLTAGE (V) V S = 3V, V R L TO GND 2. 1812 G11 3 CHANGE IN OFFSET VOLTAGE () 2 V S = V, V 2 V S = ±V 2. V S = ±V 16 R L TO GND 16 R L TO GND 1. 12 12 1. 8 8 T A = C 4 4. 4 8 12 16 2 R L = 1Ω. 1 1. 2 2. 3 3. 4 4. OUTPUT VOLTAGE (V) CHANGE IN OFFSET VOLTAGE () 4 8 12 16 2 4 3 1 R L = 1Ω 2 1 2 3 4 OUTPUT VOLTAGE (V) CHANGE IN OFFSET VOLTAGE (). 1. 1. 2. 6 T A = 2 C T A = 12 C 4 3 1 1 3 4 OUTPUT CURRENT (ma) 6 1812 G12 1812 G13 1812 G14 OFFSET VOLTAGE () 12 11 V S = ±V 1 9 V 8 S = ±2.V 7 6 V S = ±1.V TYPICAL PART 4 2 4 6 8 1 12 14 TIME AFTER POWER-UP (SECONDS) 1812 G1 NOISE VOLTAGE (nv/ Hz) 6 V S = V, V 4 3 2 NPN ACTIVE V CM = 4.2V 1 PNP ACTIVE V CM = 2.V.1.1 1 1 1 FREQUENCY (khz) 1812 G16 1 1812fc
標準的性能特性 NOISE CURRENT (pa/ Hz) 3. V S = V, V 2. 2. 1. 1.. NPN ACTIVE V CM = 4.2V PNP ACTIVE V CM = 2.V INPUT NOISE VOLTAGE (nv).1hz 1Hz 2 V S = V, V 1 1 GAIN BANDWIDTH (MHz) 1 9 8 7 GAIN BANDWIDTH PRODUCT 6 6 PHASE MARGIN T A = 2 C 4 3 PHASE MARGIN (DEG).1.1 1 1 1 FREQUENCY (khz) 2 1 2 3 4 6 7 8 9 1 TIME (SECONDS) 2 1 2 3 4 6 7 8 9 1 TOTAL SUPPLY VOLTAGE (V) 1812 G17 1812 G18 1812 G19 1 3 7 GBW PRODUCT A V = 1 9 V S = ±2.V R F = R G = 1k V S = ±2.V 6 PHASE GAIN BANDWIDTH (MHz) 8 7 6 GBW PRODUCT V S = ±V PHASE MARGIN V S = ±2.V PHASE MARGIN V S = ±V 1 3 1 2 4 6 8 1 12 TEMPERATURE ( C) 1812 G2 6 4 3 2 PHASE MARGIN (DEG) SLEW RATE (V/µs) 3 2 2 1 1 V S = ±V 3 1 2 4 6 8 1 12 TEMPERATURE ( C) 1812 G21 OPEN-LOOP GAIN () 4 3 2 1 1 2 4 3.1 GAIN V S = ±2.V V S = ±V 8 1.1 1 1 1 3 FREQUENCY (MHz) 1812 G22 1 8 6 4 2 2 6 PHASE (DEG) 12 9 6 A V = 1 C L = 1pF A V = 1 18 1 12 A V = 2 C L = 1pF A V = 2 GAIN () 3 3 6 V S = ±V V S = ±2.V GAIN () 9 6 3 V S = ±V V S = ±2.V 9 3 12.1 1 1 1 3 FREQUENCY (MHz) 1812 G23 6.1 1 1 1 3 FREQUENCY (MHz) 1812 G24 1812fc 11
標準的性能特性 OUTPUT IMPEDANCE (Ω) 6 1 1 1.1.1.1.1 V S = ±2.V A V = 1 A V = 2 A V = 1 1 1 1 FREQUENCY (MHz) 1812 G2 COMMON MODE REJECTION RATIO () 12 V S = V, V 1 8 6 4 2.1.1 1 1 1 FREQUENCY (MHz) 1812 G26 POWER SUPPLY REJECTION RATIO () 9 8 7 6 4 3 2 1 1.1 NEGATIVE SUPPLY FREQUENCY (MHz) V S = V, V T A = 2 C POSITIVE SUPPLY.1.1 1 1 1 1812 G27 OVERSHOOT (%) 6 4 4 3 3 2 2 1 1 1 V S = V, V A V = 1 R OS = 2Ω R OS = R L = Ω R OS = 1Ω 1 1 1 CAPACITIVE LOAD (pf) OVERSHOOT (%) 6 4 4 3 3 2 2 1 1 1 V S = V, V A V = 2 R OS = R L = Ω R OS = 1Ω 1 1 1 CAPACITIVE LOAD (pf) R OS = 2Ω DISTORTION (c) 4 6 7 8 9 1 11.1 V S = V, V A V = 1 V OUT = 2V P-P R L = 1Ω, 2ND, 3RD.1 1 1 FREQUENCY (MHz), 2ND R L = 1Ω, 3RD 1812 G28 1812 G29 1812 G3 DISTORTION (c) 4 V S = V, V A V = 2 V OUT = 2V P-P 6 7 8 9 1 11.1 R L = 1Ω, 2ND, 3RD.1 1 1 FREQUENCY (MHz), 2ND R L = 1Ω, 3RD 1812 G31 OUTPUT VOLTAGE SWING (V P-P ) 4.6 4. 4.4 4.3 4.2 4.1 A V = 2 A V = 1 4. V S = V, V 3.9 1k 1k 1k 1M 1M FREQUENCY (Hz) 1812 G32 12 1812fc
標準的性能特性 V V /DIV 1V/DIV V V V S = V, V 1ns/DIV 1812 G33 A V = 1 V S = V, V ns/div 1812 G34 A V = 1 V V 2V/DIV V /DIV V V S = ±V 2ns/DIV 1812 G3 A V = 1 V S = ±V ns/div 1812 G36 A V = 1 V IN 1V/DIV V V OUT 2V/DIV V S = V, V 1ns/DIV 1812 G37 A V = 2 1812fc 13
アプリケーション情報 1 2 PNP Q1/Q2 NPN Q3/Q4 PNP 1.2V Q I1 Q6/Q7 NPN PNP Q17 Q19 PNP Q1/Q2 Q16 Q1/Q2 Q16 Q16 Q17 Q19 Q1/ Q2 1 Q14/Q1 C2 C3 LT181 SO-8 θ JA 19 /W 1 T J T A P D θ JA T J = T A (P D θ JA ) IC P DMAX V R3 R4 R V V I 2 IN ESDD1 ESDD2 D6 D D8 D7 D1 D2 Q V BIAS I 1 Q11 Q12 C C V Q13 I 3 C2 Q1 OUT IN Q4 Q3 Q1 Q2 Q16 Q17 ESDD4 Q18 V ESDD3 V Q19 Q7 Q6 D3 D4 Q1 Q9 Q8 BUFFER AND OUTPUT BIAS C1 Q14 V R1 R2 1812 F1 1 14 1812fc
アプリケーション情報 1/2 P DMAX P DMAX =(V S I SMAX )(V S /2) 2 /R L SO-8 LT181 V Ω P DMAX = (1 4.mA)(2.) 2 / =.4.12 =.17W.34W T A = T J (P DMAX 19 /W) = 1 (.34W 19 /W)= 8 PNP 1.2V NPN PNP PNP 7μV.2V 1.2V 2 LT181/ LT182 ma IC 1 12.6V( ) 2 D1 D4 7 D1/D2 D3/ D4 1mA 1.4V 1 D/D8-1mA 1 3kV ESD 1 1812fc 1
アプリケーション情報 7pF 1Ω Ω 2 k pf PC 2 12.7MHz 2MHz 7 pf 標準的応用例 3V 1MHz 4 LT181 3V DC 1MHz 4 MHz 1 2.2V P-P 2kHz 8c 6 1A 2 2.1Ω 2V/A 3 4MHz V OS I B 4mA 6 3mA 3 I L A TO 1A 2.3Ω 3V.1Ω 1/2 LT181 V OUT V TO 2V /DIV 2.3Ω 1k V 1812 F2 V OUT = 2 I L f 3 = 4MHz UNCERTAINTY DUE TO V OS, I B < 4mA 2 1A V S = 3V ns/div 1812 F3 3 16 1812fc
標準的応用例 1A 1A LT181 4 LT181 2.3V 2.1V LT181 V IN NPN FMMT619 V IN /R1 LT181 1 1A / R2 C1 23ns R1 1A V V IN DO NOT FLOAT 1/2 LT181 R3 1Ω C1 39pF R2 33Ω Q1 ZETEX FMMT619 R1 1Ω IR LASER INFINEON SFH49 1812 F4 4 1A 1mA/DIV ns/div ma 1812 F 1812fc 17
パッケージ DD 8 DFN 3mm 3mm (Reference LTC DWG # -8-1698).67 ±. R =.11 TYP 8.38 ±.1 3. ±. 2.1 ±. 1.6 ±. (2 SIDES).2 ±.. BSC 2.38 ±. (2 SIDES) 1 NOTE 6.2 REF 3. ±.1 (4 SIDES).7 ±... 1.6 ±.1 (2 SIDES) 4.2 ±. 2.38 ±.1 (2 SIDES) NOTE 1. JEDEC MO-229 WEED-1 2. 3. 4..1mm. 6. 1 1. BSC (DD) DFN 123 MS8 8 MSOP (Reference LTC DWG # -8-166 Rev F).889 ±.127 (.3 ±.).23 (.26) MIN 3.2 3.4 (.126.136).42 ±.38 (.16 ±.1) TYP.6 (.26) BSC 3. ±.12 (.118 ±.4) (NOTE 3) 8 7 6.2 (.2) REF.24 (.1) DETAIL A 6 TYP 4.9 ±.12 (.193 ±.6) 3. ±.12 (.118 ±.4) (NOTE 4) 18.18 (.7) DETAIL A.3 ±.12 (.21 ±.6) NOTE 1. / 2. 3. 1.1 (.43) MAX.22.38 (.9.1) TYP.6 (.26) BSC 1 2 3 4.12mm.6" 4..12mm.6"..12mm (.4").86 (.34) REF.116 ±.8 (.4 ±.2) MSOP (MS8) 37 REV F 1812fc
パッケージ SS8 8.1 (Reference LTC DWG # -8-161). BSC.4 ±..189.197 (4.81.4) NOTE 3 8 7 6.24 MIN.16 ±..228.244 (.791 6.197).1.17 (3.81 3.988) NOTE 3.3 ±. TYP 1 2 3 4.8.1 (.23.24).1.2 (.24.8) 4 8 TYP.3.69 (1.346 1.72).4.1 (.11.24).16. (.46 1.27) NOTE 1. 2. 3..6".1mm.14.19 (.3.483) TYP. (1.27) BSC SO8 33 S 14.1 (Reference LTC DWG # -8-161). BSC.4 ±..337.344 (8.6 8.738) NOTE 3 N 14 13 12 11 1 9 8.24 MIN 1 2 3 N/2.16 ±..228.244 (.791 6.197) N N/2.1.17 (3.81 3.988) NOTE 3.3 ±. TYP 1 2 3 4 6 7.8.1 (.23.24).1.2 (.24.8) 4 8 TYP.3.69 (1.346 1.72).4.1 (.11.24).16. (.46 1.27) NOTE 1. 2. 3..6".1mm.14.19 (.3.483) TYP. (1.27) BSC S14 2 1812fc 19
標準的応用例 DC 1 6 2V DC LT181 1/2 Q1 Q3 Q2 Q4 Q2 Q4 R4 R V IN Q2 Q4 LT181 3kΩ LT181 1/2 DC 1pF 2V 7 13V V 1k Q 4.99k 1k Q6.1µF V Q1 Q2 V R2 2k 1/2 LT181 R4 2k R 2k R6 2k R7 2k V OUT MATERIAL UNDER ELECTRIC FIELD 1pF V IN 2V/DIV Q3 Q4 V IN C2 8pF 1V R1 2k R3 2k C1 39pF 1k Q7 4.99k 13V Q8 1k 1812 F6 6 A V = V OUT /V IN = 1 ±13V SUPPLY I Q = 13µA OUTPUT SWING = ±128.8V OUTPUT OFFSET 2 OUTPUT SHORT-CIRCUIT CURRENT 3mA 1% TO 9% RISE TIME 8μs, 2V OUTPUT STEP SMALL-SIGNAL BANDWIDTH 1kHz Q1, Q2, Q7, Q8: ON SEMI MPSA42 Q3, Q4, Q, Q6: ON SEMI MPSA92 V OUT V/DIV 1µs/DIV 1812 F7 7 関連製品 LT1399 3MHz 1MHz.1 LT1498/LT1499 / 1MHz 6V/μs C-Load LT163/LT1631 / 3MHz 1V/μs LT18 2 12-94 東京都千代田区紀尾井町 3-6 紀尾井町パークビル 8F TEL 3-226-7291 FAX 3-226-268 www.inear-tech.co.jp DC V OS(MAX) 47μV 4μV/ DC V OS(MAX) 2μV 7mA 4.4mA/ 8MHz 2V/μs LT186/LT187 / 32MHz 14V/μs LT189/LT181 / 18MHz C-Load はリニアテクノロジー社の商標です DC V OS(MAX) μv 3.nV/ Hz MHz 8 LT186 3V/μs MHz 9c LT189 1812fc LT 39 REV C PRINTED IN JAPAN LINEAR TECHNOLOGY CORPORATION 22