B1 er. 3.05 (2019.03.27), SPICE.,,,,. * 1 1. 1. 1 1.. 2. : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD https://www.orcad.com/jp/resources/orcad-downloads.. 1
2. SPICE 1. SPICE Windows OrCAD Capture. 1. [File] [New] [Project], 2 Name. PSpice Analog or Mixed A/D. Location ( 2 ) Create a blank project OK 3. (, Create upon an exsisting project,.), [File] [Open] [Project],.opj,.dsn, SCHEMATIC1 Page1. 2 3 2
2. [Place] [Part] 4( )., Part List R/ANALOG. box, OK. End Mode ( Esc )., (C/ANALOG)., PULSE. Ground (Ground SPICE ).,,. End Wire.,,.,. k ( ), m, n. µ( ) u. M 10000k., (PULSE), (SIN AC), (DC) 3, 5. SIN (OFF), (AMPL), (FREQ) 3. DC. 4 ) 4. 3-1,, 3-1. 3
2 + - + - + - + 1 TD TR PW TF PER Time 5, (PULSE), SIN, AC), (DC) 3.,. Time Domain, DC Sweep, AC Sweep. [PSpice] [New Simulation Profile]. ( Profile [Edit Profile]. ) Name, Create. Analysis Type Time Domain Run to Time Step Size. Step Size Run to Time 1/1000., Analysis Type DC Sweep Sweep ariable Sweep Type. 2, Primary Secondary. Primary, Secondary Primary. Analysis Type AC Sweep, ( AC ). 6 4
4.,.. [PSpice] [Run],.,,. Time Domain. Run to time. 5....... n( ) u( ). Step Time Increment. Run to Time Increment. MOSFET MOSFET.. 6.,. Property,. fn prt sc. PAINT, (,,,,, )..., 8 3-1. 5
7. SPICE ( ).. ( ) Place Part Add Library special.olb. library SPECIAL, part PARAM PARAMETERS.. alue C. PARAMETERS, New Column Add New Column Name C ( ), alue 1n. Pspice Edit Simulation Profile, Parametric Sweep. Global parameter, C Parameter Name C ( )., Sweep Type, Start alue, End alue, Increment OK. alue List. Run, All OK. 8. MOS 4 Place Part BREAKOUT - MBreakN NMOS, MBreakP PMOS. 7.. 7 MOS MOSFET SPICE., MOSFET ( ), [Edit PSpice Model], 8,, [File] [Save]., MOSFET LEEL 1, L = 5 µm, W = 5 µm, T O = 0.8 ( SPICE TO O ), k = 2 10 5 A/ 2, λ = 0.06 1, 8.model Mbreakn NMOS LEEL=1 L=5u W=5u TO=0.8 KP=2e-5 LAMBDA=0.06 ( ) ( ).. MOSFET LEEL 1. 6
8 MOS 7
3. 3-1. RC, R C. I(t), Q(t),, RI, Q/C, RI + Q C = (t) (1), I = dq/dt, R dq dt + Q C. RC. = (t) (2) [1(a)] (t) (2), Q(t),. Q(0) = 0. [1(b)] SPICE. Simulation Profile Time Domain, (t). 2., R = 1 kω, C =1nF,, Q 1/e, RC. [1(c)], R 200 Ω 1kΩ,. [1(d)] SIN, 10 khz, 100 khz, 1 MHz,. Run to time ( ). [1(e)] Simulation Profile AC Sweep., 100Hz 10MHz ( AC ). R C (t) 1m 0 10 s 10 s Time 9 RC 8
3-2. LCR, ( ),,.,, L, R, C. I(t), Q(t),,, LdI/dt, RI, Q/C L di dt + RI + Q C = (t) (3)., I = dq/dt, L d2 I dt 2 + R di dt + I C = d dt (4). d/dt,, m d2 x dx + 2mγ dt2 dt + mω2 0x = 0 (5) (m :, x :, γ :, ω 0 : ), LCR I (d/dt ). [2(a)] d/dt = 0 (4),. I(0) = [2(b)] 1mA, di/dt(0) = 0. SPICE. Simulation Profile Time Domain,. (t), L = 10 mh, C = 1 nf, R 200Ω 1kΩ 200Ω. [2(c)] (t) = 0 sin(ωt) (AC ), AC Sweep. R 1kΩ, ω 1kHz 1MHz,,,L, C, R. R C (t) I L 1m 0 10 s 40 s Time 10 LCR 9
3-3. [3(a)] (a). R = 1kΩ, C = 10nF, AC, OUT. [3(b)] (b). AC, OUT. [3(c)] [3(d)] [3(e)] (a) (b),. (a) (b),.,,. (a) R (b) C IN C OUT IN R OUT 11 (a) Low-pass filer, (b)high-pass filter 10
3-4. MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) 5 7 NMOS PMOS 2 (Source) (Drain) (Gate) 3 MOSFET Level 1 I D D G ( T ). (1) ( G < T ) I D = 0 (2) ( T < G, G T > D ) I D = k [ ( G T ) D D/2 2 ] (1 + λ D ) (3) ( T < G, G T < D ) I D = (k /2) [ ( G T ) 2] (1 + λ D )., N MOS Mbreak-N 12( ).. L (µm) W (µm) T O () k (A/ 2 ) λ ( 1 ) NMOS 5 5 0.8 2.2 10 5 0 [4(a)] DC, 1 Primary, 2 Secondary, 1 0 5, 2 0 5,. [4(b)] DC, 1 Secondary, 2 Primary, 1 0 5, 2 0 5,. Primary 0.1, Secondary 1. [4(c)] 12( ), DC = 3, DD = 5, AC = 1 m, ω = 1 khz. OUT. R 1 kω 100 kω, OUT. nmos 1 DC + AC sin(ωt) R DD OUT 2 I 12 11
3-5., 0 NMOS, OUT DD (=5). DD NMOS OUT 0.,. NOT.,. R =10MΩ. NMOS. [5(a)] [5(b)] [5(c)] Time Domain, ( 10fF ). C 20fF 100fF 20fF, C., ( ). R DD (t) IN OUT 5 I C 0 10 s 10 s Time 13 12
3-6. CMOS, CMOS., p MOS,.,. DD 5, 14,.. L (µm) W (µm) T O () k (A/ 2 ) λ ( 1 ) NMOS 5 5 0.8 2.2 10 5 0 PMOS 5 5-0.8 7.3 10 6 0 [6(a)] [6(b)] [6(c)] [6(d)] Time Domain, ( 10fF ). C 20fF 100fF 10fF, C. ( ),. 5(c) 6(c),,. DD pmos IN nmos C OUT I 14 CMOS, 12:30 12:50 (E1-113)., (E6 E419 ). (morifuji@eei.eng.osakau.ac.jp). 13